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1 - 50 of about 249 for AN1001 |
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First line: shockley diode application shockley diode datasheet SIDAC shockley diode AN1001 Introduction Thyristor family semiconductors consists several very useful devices. most widely used this family silicon controlled rectifiers (SCRs), Triacs, SIDACs, DIACs. many applications these devices perform functio Abstract: .. AN1001. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Fundamental Characteristics of Thyristors. AN1001. Fundamental .. Tags: triac scr schematic thyristor silicon chips thyristor scr oscillator circuit SIDAC shockley diode application shockley diode shockley* SCHEMATIC circuit scr oscillator phase firing amplifier diode shockley DIACS low current datasheet abstract.. |
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First line: capacitor package resistor Dielectric Filter active and passive electronic components capacitor cross reference Application Note AN1001 ClearONETM Configuration Options double-sided construction ceramic Ball Grid Array (BGA) package allows board designer closely locate passive resistor capacitor ele Abstract: .. AN1001. ClearONETM RC BGA Configuration Options. Introduction. The double-sided construction of the CTS ceramic Ball Grid Array BGA package allows the PC board designer to closely locate passive .. Tags: active and passive electronic components Dielectric Filter resistor capacitor package capacitor cross reference datasheet abstract.. |
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First line: autotransformer Maxim Notes Communications Circuits Keywords: Off-The-Shelf Transformer Adapts Controller SLIC Applications 1996 APPLICATION NOTE 1001 Off-The-Shelf Transformer Adapts Controller SLIC Applications Abstract: .. Application note 1001: www.maxim-ic.com/an1001 More Information For technical support: www.maxim-ic.com/support For samples: www.maxim-ic.com/samples Other questions and comments .. Tags: autotransformer MV-GX Series mv-gx capacitors "Inverting Switching Regulator" datasheet abstract.. |
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First line: AN1001 APPLICATION NOTE Using ByteSafeTM SRAMs Parity Non-Parity Applications GSI's ByteSafeTM technology opens front battle highly reliable data. Although parity storage been around long digital memory, learning whether data arrived correctly lost storage remained impossible. Today, networking comm Abstract: .. AN1001. APPLICATION NOTE. x16/x32 Mode PE = 1 Read Parity Error Output Timing Diagram. CK. Address A Address B Address C Address D Address E Address F. D Out A D Out B D Out C D Out D D Out E. tKQ. tHZ. tKQX. tLZ .. Tags: datasheet abstract.. |
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First line: AN1001 LITTLE FOOTt TSSOP-8 Next Step Surface-Mount Power MOSFETs Wharton McDaniel David Oldham When Siliconix introduced LITTLE FOOTr MOSFETs, first time that power MOSFETs been offered true surface-mount package, SOIC. LITTLE FOOT immediately found home small form factor disk drives, computers, ce Abstract: .. AN1001. Siliconix 01-Sep-93 01-Sep-93 . 1. LITTLE FOOT TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham. When Siliconix introduced its LITTLE FOOT MOSFETs, it was the .. Tags: TSSOP-8 footprint TSSOP-8 datasheet abstract.. |
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First line: AN1001 LITTLE FOOTR TSSOP-8 Next Step Surface-Mount Power MOSFETs Wharton McDaniel David Oldham Abstract: .. AN1001 Vishay Siliconix. www.vishay.com FaxBack 408-970-5600 2. Document Number: 70571 07-Jun-00 07-Jun-00 . Because the TSSOP has a fine pitch foot print, the pad layout is somewhat more demanding than .. Tags: AN1001 5844 datasheet abstract.. |
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First line: AN1001 LITTLE FOOTt TSSOP-8 Next Step Surface-Mount Power MOSFETs Wharton McDaniel David Oldham When Siliconix introduced LITTLE FOOTr MOSFETs, first time that power MOSFETs been offered true surface-mount package, SOIC. LITTLE FOOT immediately found home small form factor disk drives, computers, ce Abstract: .. AN1001. Siliconix 01-Sep-93 01-Sep-93 . 1. LITTLE FOOT TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham. When Siliconix introduced its LITTLE FOOT MOSFETs, it was the .. Tags: TSSOP-8 footprint TSSOP-8 AN1001 datasheet abstract.. |
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First line: AN1001 APPLICATION NOTE Choice Serial EEPROMs Requires Understanding Differences Serial access memory devices offer many advantages over their parallel access counterparts. list next page assumes 10-bit addressing, depicted Figure differential becomes even greater address space increased. Figure Ser Abstract: .. AN1001. APPLICATION NOTE Choice of Serial EEPROMs Requires Understanding of Bus Differences. Serial access memory devices offer many advantages over their parallel access counterparts. The .. Tags: datasheet abstract.. |
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First line: AN1001 APPLICATION NOTE Choice Serial EEPROMs Requires Understanding Differences Serial access memory devices offer many advantages over their parallel access counterparts. list next page assumes 10-bit addressing, depicted Figure differential becomes even greater address space increased. Figure Ser Abstract: .. AN1001. APPLICATION NOTE Choice of Serial EEPROMs Requires Understanding of Bus Differences. Serial access memory devices offer many advantages over their parallel access counterparts. The .. Tags: datasheet abstract.. |
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First line: single power diode package TSSOP-8 footprint AN1001 LITTLE FOOTR TSSOP-8 Next Step Surface-Mount Power MOSFETs Wharton McDaniel David Oldham Abstract: .. AN1001 Vishay Siliconix. www.vishay.com 2. Document Number: 70571 12-Dec-03 12-Dec-03 . Because the TSSOP has a fine pitch foot print, the pad layout is somewhat more demanding than the layout of the SOIC. .. Tags: single power diode package TSSOP-8 footprint datasheet abstract.. |
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First line: "embedded systems" firmware MCP9800 AN1001 Temperature Sensor Accuracy Compensation with PICmicro® Microcontroller SOLUTION APPROACH Abstract: .. 2005 Microchip Technology Inc. DS01001A-page DS01001A-page 1. AN1001. INTRODUCTION Microchip Technology Inc. provides a number of analog and serial-output Integrated Circuit IC temperature sensors .. Tags: "embedded systems" firmware temperature sensor PIC MCP9800 MCP9701 AN1001 datasheet abstract.. |
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First line: full bridge mosfet smps PD-91886A PROVISIONAL Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Benefits Gate Charge results Simple Drive Requirement Improved Gate, Avalanche Dynamic dv/dt Ruggedness Fully Characterized Capacitance Avalanche Voltage Abstract: .. Avalanche Voltage and Current l Effective Coss Specified See AN1001 VDSS RDS on max ID. 500V 500V 0.26Ω 23A. Applicable Off Line SMPS Topologies. l Full Bridge Converters. l Power Factor Correction .. Tags: IRF 123A full bridge mosfet smps AN1001 datasheet abstract.. |
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First line: 94641B IRF7494 HEXFET® Power MOSFET Applications High frequency DC-DC converters Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Notesthrough are on page 8. SO-8 Top View. 8 1. 2. 3. 4 5. 6. 7. D. D. D. D G. S. A. S. S. A. VDSS RDS on max ID. 150V 150V 44m @VGS = 10V 5.2A. Absolute Maximum Ratings .. Tags: irf 44 n IRF AN1001 IRF 100A AN1001 IRF7494 |
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First line: ic ca 747 pt1001 PT1001-TO ic 747 PT1001-A Gb/s, 850nm PIN-TIA Advanced Product Specifications FEATURES Abstract: .. Please see Application Notes AN1001-A for details. Single-ended Output. OEpic Inc. reserves the right to make changes to the product s or information contained herein without notice. The .. Tags: ic 747 ic ca 747 PT1001-TO OEpic PT1001-A |
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First line: AN1001 PIC® Ezana Haile Microchip Technology Inc. MCP9700/01 MCP9800 Abstract: .. AN1001 简介Microchip Technology Inc. 提供一系列模拟输出或串行数据输出的集成芯片式温度传感器。在室温下,这些传感器的典型精度在 1 C内。然而在极端高温或低温情况下 .. Tags: MCP9700 01 MCP9800 |
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First line: SL6700C ZARLINK This product obsolete. This information available your convenience only. more information Zarlink's obsolete products replacement product lists, please visit products/ fffflgfl LCDijC Semiconductors, SL6700C Abstract: .. Further application information is available in Application Note AN1001. TYPICAL DC PIN VOLTAGES Supply 4.5V, Input 1mV Pin Voltage Pin Voltage 1 2,25V 10 4.5V 2 2,09 V 11 3.7V 3 3.68V 12 0V 4 .. Tags: SL6700C datasheet abstract.. |
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First line: LV1001-TO LV1001-A Gb/s, VCSEL Advanced Product Specifications Abstract: .. Please see Application Notes AN1001-A for details. .. Tags: LV1001-TO VCSEL die bonding LV1001-A |
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First line: 94641A IRF7494 HEXFET® Power MOSFET Applications High frequency DC-DC converters Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Notesthrough are on page 8. SO-8 Top View. 8 1. 2. 3. 4 5. 6. 7. D. D. D. D G. S. A. S. S. A. VDSS RDS on max ID. 150V 150V 44m @VGS = 10V 5.2A. Absolute Maximum Ratings .. Tags: f7101 IRF7494 |
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First line: SK15XX Family Signal Distribution HIGH-PERFORMANCE PRODUCTS SK15XX Family Functional Block Diagram Abstract: .. AN1001 - EPIC Family Product Line AN1003 AN1003 - Termination Techniques for ECL / LVECL PECL / LVPECL Devices. AN1004 AN1004 - Interfacing Between LVDS and ECL / LVECL / PECL / LVPECL. Application Notes. 7 www.semtech .. Tags: AN1003 SK15XX |
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First line: SK44XX Family Quad Buffer/Receiver HIGH-PERFORMANCE PRODUCTS SK44XX .amily .unctional Block Diagram Abstract: .. AN1001 - EPIC Family Product Line AN1003 AN1003 - Termination Techniques for ECL / LVECL / PECL / LVPECL Devices AN1004 AN1004 - Interfacing Between LVDS and ECL / LVECL / PECL / LVPECL. ’ Revision 1/July 10, 2002 .. Tags: SK4411* AN1003 SK44XX |
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First line: 95307 Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Lead-Free. IRF7453PbF IRF7453PbF . 2 www.irf.com. Parameter Min. Typ. Max. Units Conditions. gfs Forward Transconductance 1.8 ––– ––– S VDS .. Tags: IRF 930 IRF Power MOSFET code marking 24V 10A SMPS IRF7453PBF |
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First line: 95063A Applications High frequency DC-DC converters Lead-Free IRFR220NPbF IRFU220NPbF Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. VDSS RDS on max mΩ ID 200V 200V 600 5.0A. Typical SMPS Topologies. Telecom 48V input Forward Converters. Parameter Max. Units. ID @ TC .. Tags: power Diode 200V 10A IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 10A 100V IRF P CHANNEL MOSFET 100v IRFR220NPbF IRFU220NPbF |
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First line: 95355A Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 1.04. RθJA Junction-to-Ambient PCB mount * ––– 50 C/W. RθJA Junction-to .. Tags: IRF MOSFET 10A P IRF P CHANNEL MOSFET 10A 100V 12v 10A regulator datasheet abstract.. |
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First line: 95510A IRFR3518PbF IRFU3518PbF Applications High frequency DC-DC converters Lead-Free Benefits Gate-to-Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage Current HEXFET® Power Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. D-Pak IRFR3518 IRFR3518 . I-Pak IRFU3518 IRFU3518 . Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 1.4. RθJA Junction-to-Ambient PCB mount .. Tags: datasheet abstract.. |
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First line: 95373A Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 2.7. RθJA Junction-to-Ambient PCB mount * ––– 50 C/W. RθJA Junction-to .. Tags: Equivalent IRF 740 IRF P CHANNEL MOSFET 10A 100V datasheet abstract.. |
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First line: 95353A Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 1.04. RθJA Junction-to-Ambient PCB mount * ––– 50 C/W. RθJA Junction-to .. Tags: IRF 810 U120 datasheet abstract.. |
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First line: 95516A HEXFET® Power MOSFET Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Absolute Maximum Ratings Parameter Units. VDS Drain-to-Source Voltage V. VGS Gate-to-Source Voltage. ID @ TC = 25 C Continuous .. Tags: datasheet abstract.. |
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First line: 94452A HEXFET® Power MOSFET IRFR3418 IRFU3418 Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Absolute Maximum Ratings Parameter Units. VDS Drain-to-Source Voltage V. VGS Gate-to-Source Voltage. ID @ TC = 25 C Continuous .. Tags: IRFR3418 IRFU3418 |
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First line: 94573 Appications High frequency DC-DC converters Motor Contro Benefits Gate-to-Drain Charge Reduce Switching Losses Characterized Capacitance Incuding Effective COSS Simpify Design, (See App. Note AN1001) Characterized Avaanche Votage Current Typica RDS(on) Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current Typical RDS on = 12mΩ D2Pak. IRF8010S IRF8010S . TO-262 TO-262 IRF8010L IRF8010L . Absolute Maximum Ratings Parameter Units. ID @ TC = 25 C Continuous Drain .. Tags: IRF id 80A IRF id 80A IRF AN1001 irf 80a datasheet abstract.. |
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First line: 94361 IRFP4710 HEXFET® Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterruptible Power Supplies Benefits Gate-to-Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Thermal Resistance Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 0.81. RθCS Case-to-Sink, Flat, Greased Surface 0.24 .. Tags: TO-247AC Package AN1001 datasheet abstract.. |
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First line: 94505A HEXFET® Power MOSFET IRFR3410 IRFU3410 Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 1.4. RθJA Junction-to-Ambient PCB mount * ––– 40 C/W. RθJA Junction-to .. Tags: IRF P CHANNEL MOSFET 10A 100V AN1001 IRF 1640 IRFR3410 IRFU3410 |
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First line: 95863A Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage and Current. S. D. G. VDSS RDS on max ID. -150V -150V 150m 150m @VGS = -10V -10V -27A -27A . D2Pak IRF6218S IRF6218S . TO-262 TO-262 IRF6218L IRF6218L . Absolute Maximum Ratings Parameter Units. VDS .. Tags: datasheet abstract.. |
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First line: 94420A IRF7380 HEXFET® Power MOSFET Applications High frequency DC-DC converters Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Notesthrough are on page 8. SO-8. VDSS RDS on max ID. 80V 73m @VGS = 10V 3.6A. D1. D1. D2. D2. G1. S2. G2. S1. Top View. 8 1. 2. 3. 4 5. 6. 7. Absolute Maximum .. Tags: IRF7380 |
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First line: 97172 IRF7854PbF Applications Primary Side Switch Bridge twoswitch forward topologies using (±10%) ETSI range inputs. Secondary Side Synchronous Rectification Switch 12Vout Suitable Non-Isolated Synchronous Buck DC-DC Applications Benefits Gate Drain Charge Reduce Switching Losses Fully Chara Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Notesthrough are on page 8. SO-8 Top View. 8 1. 2. 3. 4 5. 6. 7. D. D. D. D G. S. A. S. S. A. VDSS RDS on max ID. 80V 13.4m@VGS = 10V 10A. Absolute Maximum Ratings .. Tags: IRF7854PbF |
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First line: 95862 Applications Reset Switch Active Clamp Reset DC-DC converters IRF6218 Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. TO-220AB TO-220AB S. D. G. VDSS RDS on max ID. -150V -150V 150m 150m @VGS = -10V -10V -27A -27A . Absolute Maximum Ratings Parameter Units. VDS Drain-to-Source Voltage .. Tags: 9246 IRF6218 |
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First line: 94497 Applications High frequency DC-DC converters Motor Control Benefits Gate-to-Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage Current Typical RDS(on) IRF8010 Abstract: .. Note AN1001 z Fully Characterized Avalanche Voltage. and Current z Typical RDS on = 12mΩ. Absolute Maximum Ratings Parameter Units. ID @ TC = 25 C Continuous Drain Current, VGS @ 10V ID @ TC = 100 .. Tags: IRF8010 equivalent irf 80a IRF8010 |
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First line: 95288 IRF7495PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Notesthrough are on page 8. SO-8 Top View. 8 1. 2. 3. 4 5. 6. 7. D. D. D. D G. S. A. S. S. A. VDSS RDS on max ID. 100V 100V 22m @VGS = 10V 7.3A. Absolute Maximum Ratings .. Tags: IRF7495PbF |
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First line: PD-94044 Applications High frequency DC-DC converters IRF5801 Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. VDSS RDS on max ID. 200V 200V 2.2Ω Ω Ω Ω Ω 0.6A. Parameter Max. Units. ID @ TA = 25 C Continuous Drain Current, VGS @ 10V 0.6. ID @ TA = 70 C Continuous .. Tags: IRF5801 DIODE 30V TSOP-6 IRF5801 |
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First line: 95370B IRFR24N15DPbF IRFU24N15DPbF Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current Lead-Free. VDSS RDS on max ID. 150V 150V 95mΩ 24A. D-Pak. IRFR24N15DPbF IRFR24N15DPbF I-Pak IRFU24N15DPbF IRFU24N15DPbF . Parameter Max. Units. ID @ TC = 25 C Continuous .. Tags: IRFR24N15DPBF IRFR24N15DPbF* IRFR24N15DPbF IRFU24N15DPbF |
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First line: 95514A IRFR3410PbF IRFU3410PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 1.4. RθJA Junction-to-Ambient PCB mount * ––– 40 C/W. RθJA Junction-to .. Tags: U120 IRF 1640 IRFR3410PbF IRFU3410PbF |
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First line: 96181 Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage and Current Lead-Free. S. D. G. VDSS RDS on max ID. -150V -150V 150m 150m @VGS = -10V -10V -27A -27A . D2Pak. IRF6218SPbF IRF6218SPbF TO-262 TO-262 IRF6218LPbF IRF6218LPbF . Absolute Maximum Ratings .. Tags: IRF6218SPBF |
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First line: 95621 IRFB61N15DPbF HEXFET® Power MOSFET Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current TO-220AB TO-220AB . Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 0.45. RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– C/W. RθJA .. Tags: IRFB61N15DPbF IRFB61N15DPbF |
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First line: 95475A Applications High frequency DC-DC converters Benefits Gate Drain Charge Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage Current Lead-Free IRF5802PbF Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current Lead-Free. Parameter Max. Units. ID @ TA = 25 C Continuous Drain Current, VGS @ 10V 0.9. ID @ TA = 70 C Continuous Drain Current, VGS .. Tags: IRF5801 IRF5802PbF |
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First line: -95441 Appications Reset Switch Active Camp Reset DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. TO-220AB TO-220AB S. D. G. VDSS RDS on max ID. -150V -150V 150m 150m @VGS = -10V -10V -27A -27A . Absolute Maximum Ratings Parameter Units. VDS Drain-to-Source Voltage .. Tags: datasheet abstract.. |
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First line: 94829 Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Gate Charge results Simple Drive Requirement Improved Gate, Avalanche dynamic dv/dt Ruggedness Fully Characterized Capacitance Avalanche Voltage Current Effective Coss Specifie Abstract: .. Effective Coss Specified See AN1001 PD- 94829. S D G. 2 www.irf.com. Parameter Min. Typ. Max. Units Conditions. gfs Forward Transconductance 3.7 ––– ––– S VDS = 50V, ID = 4.8A. Qg Total Gate Charge .. Tags: MOSFET IRF 1018 Datasheet irf 1490 IRF840APbF |
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First line: 95373A Appications High frequency DC-DC converters Lead-Free Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 2.7. RθJA Junction-to-Ambient PCB mount * ––– 50 C/W. RθJA Junction-to .. Tags: AN1001 datasheet abstract.. |
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First line: 95370A IRFR24N15DPbF IRFU24N15DPbF HEXFET® Power MOSFET Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. VDSS RDS on max ID. 150V 150V 95mΩ 24A. D-Pak. IRFR24N15D IRFR24N15D . I-Pak. IRFU24N15D IRFU24N15D . Parameter Max. Units. ID @ TC = 25 C Continuous Drain Current .. Tags: IRFR24N15DPbF IRFU24N15DPbF |
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First line: 95061A Applications High frequency DC-DC converters Lead-Free IRFR18N15DPbF IRFU18N15DPbF Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. VDSS RDS on max ID. 150V 150V 0.125Ω 18A. Typical SMPS Topologies. Telecom 48V input DC-DC Active Clamp Reset Forward Converter. Parameter .. Tags: 120V DC to DC Converter 10A IRFR18N15DPbF IRFU18N15DPbF |
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First line: IRFP460* PD-94809 IRFP460NPbF HEXFET® Power MOSFET Abstract: .. Avalanche Voltage and Current Effective Coss specified See AN1001 VDSS Rds on max ID 500V 500V 0.24Ω 20A. Typical SMPS Topologies: Full Bridge. PFC Boost. Parameter Max. Units. ID @ TC = 25 C Continuous .. Tags: IRFP460* IRFP460N* IRFP460NPbF |
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First line: 94300 IRFBA90N20D HEXFET® Power MOSFET Abstract: .. Note AN1001 Fully Characterized Avalanche Voltage. and Current. Super-220TM Super-220TM . Thermal Resistance Parameter Typ. Max. Units. RθJC Junction-to-Case ––– 0.23. RθCS Case-to-Sink, Flat, Greased .. Tags: IRFBA90N20D IRFBA90N20D |
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