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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

A773* Transistor

Catalog Datasheet MFG & Type PDF Document Tags

A773* Transistor

Abstract: * 300°C â'˜ Distance of 1 ,6mm from case for 10 seconds â  Ã7732TS 00G471M T iö â , transistor M2 off. The data input for the D flip flop, D, is internally connected to a logic high. As V0U , minus the threshold voltage of transistor M1. The zener voltage is typically 23V and the threshold , , Q, to switch from a logic low to a logic high. Transistor M2 will the be turned on pulling the gate of transistor M1 to ground thereby turning transistor M1 off. Tran­ sistor M1 will remain off as
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A773* Transistor LR745 LR745N3 LR745N8 LR745ND AN-H28 240VAC
Abstract: oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency , to GND. Ã7732T5 â¡â¡â¡H72b bDT 14-17 HV8061 /HV8063 Electrical Characteristics , VD = 2.4V to 3.5V, ENABLE = LOW D Min RoS(on) On-resistance of switching transistor *DD , Switching transistor frequency HV8061 50 kHz VDD = 1.0V to 1.6V, Rsw-osc = 470kii, R el^ = , VA_ output drive frequency B »EL »sw HV8063 D3 Switching transistor duty cycle -
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HV8061NG HV8061X HV8063LG HV8063NG HV8063X HV8061/HV8063

a1273* transistor

Abstract: A773* Transistor product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE , CONNECTIONS °C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No , '"56.3 â'"65.1 â'"67.8 â'"73.1 â'"74.5 â'"77.3 â'"79.7 â'"99.2 â'"123.7 MAG 7.920 6.345 5.311
Renesas Electronics
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a1273* transistor

A773* Transistor

Abstract: A773 A773 A733 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.25 W (Tamb=25) 3. BASE Collector current ICM: -0.1 A Collector-base voltage -60 V V (BR) CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -50µA , IE=0 -60
WEJ Electronic
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100HZ A773 A773 Transistor a733 transistor Transistor a733 A733 P A733

A773* Transistor

Abstract: A773 Transistor DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES â'¢ Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.1±0.1 |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.25±0.1 â'¢ A Super Mini Mold Package , '"73.7 â'"75.3 â'"77.3 â'"79.0 MAG 5.517 5.308 5.147 5.209 4.893 4.844 4.709 4.495 4.406
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PA807T-T1 2SC5179
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra , '"56.9 â'"58.9 â'"60.8 â'"63.0 â'"65.5 â'"68.4 â'"71.1 â'"74.1 â'"77.3 â'"80.7 â'"84.3 â'"88.4 â Renesas Electronics
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Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , '"70.1 â'"73.1 â'"77.3 â'"81.0 â'"85.4 â'"89.8 â'"94.2 â'"99.7 â'"104.4 â'"110.4 â'"115.7 â Renesas Electronics
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A773* Transistor

Abstract: , derate linearly to 70°C at 12mW/°C. â  I Ã773ERS â¡ â¡ G 4 4 à cl 0 4 0 â  In the , . Either by N*CH transistor or P-CH output diode. 2. Either by P-CH transistor or N-CH output diode. 3 , matched the latch value, that particular charging transistor would be cut off, leaving that CH at some , X Ã7732c 15 DGCmMTM HDfl â  Pre-defined by 1 or 2 X Load Count Count Clock
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MIL-STD-883 HV3806PG HV3806DG HV3806X RBHV3806DG HVOUT27

marking AGs sot-23

Abstract: seconds. Advanced DMOS Technology This low threshold Enhancement-mode (normally-off) transistor utilizes , Waveforms and Test Circuit OUTPUT 90% VOFF) V PULSE GENERATOR -o OUTPUT Ã7732RS G0042S2 1=17 8-22
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marking AGs sot-23 LNE150 LNE150K1 LNE150ND 100S2

A773* Transistor

Abstract: fl7732c Current Unit Watts °C/W A A Each Transistor VQ1001P 1.3 96.2 0.85 3.0 All Four Transistors , . Switching Waveforms and Test Circuit A7732TS D00443Ô bflT
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fl7732c VQ1001

hv9100

Abstract: rtup Ã7732S5 0004733 Ã4T 14-24 Out HV9100/HV9101/HV9102/HV9103 Typical , consists of a highvoltage N-channel depletion-mode DMOS transistor driven by an error am plifier to form a , voltage transistor. This mini­ mizes dissipation. The reference consists of a stable bandgap
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hv9100 HV9100 HV9101 HV9102 HV9103 HV9100P HV9100C

tachometer vdo

Abstract: Tachometer circuit PHILIPS E C G INC 17E 0 ^53*^20 0004530 S â  /~."73~/>£>3 Semiconductors Features â'¢ Ground referenced tachometer Input interfaces directly with variable reluctance magnetic pickups â'¢ Op amp/comparator has floating transistor output â'¢ 60 mA sink or source to operate relays, solenoids , transistor as its output. This feature allows either a ground or supply referred load of up to 50 mA. The , INC 17E D â  hbS3TSà 00D4540 3 â 7-73"/3-¿>3 Electrical Characteristics (Vqc = l2 VDo TA
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ECG995 tachometer vdo Tachometer circuit schematic diagram dwell meter 741 OP Amp 14 PIN tachometer philips 00G4S43
Abstract: < 8.6V Pre-regulator/Startup â I Ã7735TS DDD4747 334 â  HV9106/HV9109 Typical , depletion-mode DMOS transistor driven by an error amplifier to form a controlled current path between the V,N , controlling) no current other than leakage is drawn through the high voltage transistor. This minimizes -
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HV9106 HV9109 HV9106P HV9106PJ HV9109P HV9109PJ

D1279

Abstract: BFT65 0 BAR 15-1 0 BAR 16-1 Q 62702 - A772 Q 62702 -A 73 1 Q 62702 - A773 Type Page 0 BAT , : variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g
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D1279 BFT65 diode a811 Siemens Halbleiter D1275 Germanium drift transistor

transistor A798

Abstract: A1309 transistor Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 12.99 11.24 8.62 5.58 2.48 â'".38 â'"3.09 â'"5.58 â'"7.73 â'"9.13 â'"10.02 â'"10.22 â
Teledyne Cougar
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transistor A798 A1309 transistor PP-38 MIL-HDBK-217E

A7731

Abstract: Nec b 616 Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ p1 98.2 ¡SsSsIsK MOS FIELD EFFECT TRANSISTOR 2SK1582 N-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) 2.8 ±0.2 3- G- 1.5 0.65Ã0°Ã6 Marking / © © 1+ I J 1. Source 2. Gate 3. Drain MARK: G18 Gate(G) Oâ'" Drain(D) h , °C Storage Temperature Tstg -55 to +150 °C Document No. TC-2347 (O.D.No. TC â'"7731 A) Date
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A7731 Nec b 616 I-1209

6822 TRANSISTOR equivalent

Abstract: transistor A798 Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , '".38 â'"3.09 â'"5.58 â'"7.73 â'"9.13 â'"10.02 â'"10.22 â'"10.72 â'"11.10 159.85 137.59 115.94
Agilent Technologies
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6822 TRANSISTOR equivalent 400MH P-222 SN62PRMAB3 5963-3232E 5963-2564E

transistor a2160

Abstract: a2324 heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , 0 dBm dB dBm dBm dBc dBc dB 15.4 ±0.05 ±0.19 ±0.02 18.8 34.7 â'51.1 â'77.3 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK
Analog Devices
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transistor a2160 a2324 a2530 a2746 ADL5601 0603LS-NX 09-12-2013-C ADL5601ARKZ-R7 ADL5601-EVALZ D08219-0-11/13

nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , 0.482 0.480 0.475 0.479 â'16.2 â'31.5 â'49.6 â'64.5 â'77.3 â'89.8 â'102.4 â
Renesas Electronics
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nec A1394 PU10104EJ01V0DS
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '74.1 â'77.3 VCE = 3 V, IC = 3 mA, ZO = 50 â"¦ Frequency (GHz) MAG. S11 ANG. (deg.) MAG Renesas Electronics
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PU10103EJ01V0DS
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