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UA733MU Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, CDFP10 visit Texas Instruments
UA733CNSR Texas Instruments Differential Video Amplifier 14-SO 0 to 70 visit Texas Instruments Buy
UA733CNSRE4 Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, PDSO14, GREEN, PLASTIC, SOP-14 visit Texas Instruments
UA733MJ883B Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, CDIP14, CERAMIC, DIP-14 visit Texas Instruments
UA733CD Texas Instruments Differential Video Amplifier 14-SOIC 0 to 70 visit Texas Instruments
UA733CNSRG4 Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, PDSO14, GREEN, PLASTIC, SOP-14 visit Texas Instruments

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A733 Datasheet

Part Manufacturer Description PDF Type
A733 Stanson Technology PNP TRANSISTOR Original
A733CN Philips Semiconductors Differential video amplifier Original
A733LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original
A733LT1 Weitron General Purpose Transistor PNP Silicon Original
A733LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original
A733N Philips Semiconductors Differential video amplifier Original

A733

Catalog Datasheet MFG & Type PDF Document Tags

A733

Abstract: transistor A733 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage: VCBO=-60V Complement to C945 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS(TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V , Rank Range MARKING L H 120-220 220-475 CS Typical Characteristics A733 Jiangsu
Jiangsu Changjiang Electronics Technology
Original
transistor A733 100HZ

a733 transistor

Abstract: c945 pnp transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage Complement to C945 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base , 220-475 CS Typical Characteristics A733 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original
a733 transistor c945 pnp transistor a733 SOT-23 BR c945 transistor C945 complement C945

A733

Abstract: A733 P TO-92 A733 Plastic-Encapsulate Transistors TO-92 TRANSISTOR(PNP ) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current , Q P K 90-180 135-270 200-400 300-600 Typical Characteristics A733 Bytes
Bytes
Original
A733 P

C945

Abstract: c945 equivalent A733 Q9 C945 R70 2.2k R37 4.7k R72 220k 100k R43 10k Q15 A733 Q8 A733 C21 1000pF C49 1000pF R65 33k R57 4.7k Q16 A733 VR3 5k 4.7k R61 D8
Samsung Electronics
Original
S1A0291X01-A0B0 c945 equivalent equivalent c945 c1008 c945 application note c945 P C1008 equivalent S1A0291X01 24-SDIP-300 24-SD P-300 IN4148

c945 pnp transistor

Abstract: a733 SOT-23 A733 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Collector-Base Voltage: VCBO=-60V Complement to C945 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature , 120-220 CS H 220-475 A733 SOT-23 Transistor(PNP) Typical Characteristics -
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Original
transistor a733 pnp transistor PNP C945 PNP transistor c945 A733 transistor pnp marking c945 transistor c945

A733

Abstract: A733 P A733(PNP) TO-92 Bipolar Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Junction and Storage Temperature Value -60 -50 -5 -100 250 150 , =100HZ fT Cob NF CLASSIFICATION OF hFE Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 A733(PNP
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Original
A733 pnp

A733

Abstract: Transistor a733 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 A733 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base , Q P K 90-180 135-270 200-400 300-600 Typical Characteristics A733
Jiangsu Changjiang Electronics Technology
Original
Transistor TO-92 A733 a733 transistor datasheet

A733P

Abstract: A733 SEMICONDUCTOR KTA733 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 012 A733 P No. Item Marking 1 KEC K 2 Lot No. Description 012 KEC CORPORATION 0 Year 0 ~ 9 : 2000~2009 12 Week 12 : 12th Week 3 A733 KTA733 4 02.03.20 Device Name hFE Grade P R, Q, P, K Revision No : 00 1/1 KEC
KEC
Original
A733P marking K A733-P data sheet a733 3a733 hFE kec

A733

Abstract: a733 transistor A733 -100 mA, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free TO-92 FEATURES G Power Dissipation H J A Collector 2 D Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B 3 A B C D E , changes of specification will not be informed individually. Page 1 of 2 A733 Elektronische
SeCoS
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage Complement to C945 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS(TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base , H 120-220 220-475 CS A,Apr,2011 Typical Characteristics A733 A,Apr,2011 Jiangsu Changjiang Electronics Technology
Original

a733 transistor

Abstract: A733 CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn A733 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base , Q P K 90-180 135-270 200-400 300-600 Typical Characteristics A733
HAROM
Original
BR a733

a733

Abstract: Transistor a733 TO-92 Plastic-Encapsulate Transistors â¡ cp â¡ I.I T I T 1 2 3 TO-92 1.EMITTER 2.COLLECTOR 3.BASE A733 TRANSISTOR(PNP) FEATURES Power dissipation Pcm: 0.25W (Tamb=25°C) â'¢ â  ' . â  â  Collector current äbsaaskssss IcM: -0.15A Collector-base voltage V(br)cbo: -60 V Operating and storage junction temperature range Tj/Tstg: -55°C to + 150°C E LEGT RI 1 O AI L O H A , 200-400 300-600 Typical Characteristics A733 \â'" 2 HI a: ce z> o a: o h-o UJ â'"I â'"J O O < e
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OCR Scan

A733

Abstract: la733 FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE G2A GAIN SELECT 11 M A733 GTA GAIN SELECT G2B GAIN SELECT OUT 1 GAIN SELECT Flatpak and Dip Not Shown ACTIVE PULL UP A1 OUT A1 £ 3 OUT A2 £ ACTIVE PULL UP A2 J6 â¡ VCC IS ACTIVE J PULL UP B2 14 OUT B2 OUT B1 1? ACTIVE J PULL UP B1 11 j] IN B3 10 J IN B2 9 [] IN B1 1 OUT A c ACTIVE 2 râ'" PULL UP A L 3 STROBE A L 4 , Diagram Package(s) 5 M A733 Dlff Video Amp 400 120 0.4 0.6 2.5 11 TO-91 5B,6A,9A Dual Low Noise
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la733 upb111 Fairchild 9614

A733

Abstract: A733 P WEITRON A733 PNP Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE 1. EMITTER TO-92 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -100 mA , 300-600 1/2 09-Dec-08 A733 Ratings and Characteristic Curves WEITRON hpp
Weitron
Original
A733-T

a733 SOT-23

Abstract: WILLAS SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE · Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FM120-M A733 THRU FM1200-M Pb Free Prod Features , Characterisitics -4 WILLAS Static Characteristic A733 FM120-M THRU FM1200-M Pb Free Prod C , A733 THRU FM1200-M Pb Free Produ Outline Drawing T =25 in order to · Low profile surface mounted
Willas Electronic
Original
MIL-STD-19500 UL94-V0 MIL-STD-750 FM120-MH FM130-MH
Abstract: FLASH VDD L2 L3 CG OS ON/OFF L4 L5 L6 VSS L1 RST A733 2. å能: L2, L3 , OSCO FLASH VDD L2 L3 CG OS ON/OFF L4 L5 L6 VSS L1 RST A733 CDT Bowin Electronic
Original
CDT3205 CDT-3205-01 2051B 2051C 2051D 12VDC

transistor c945

Abstract: TRANSISTOR a733 A733 R5 560 1/4W C1 0.1µF / 250V R6 95K 1/4W C2 470µF , A733 R5 560 1/4W C1 0.1µF / 250V R6 95K 1/4W C2 470µF
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Original
CT-88 CDT-5170 TRANSISTOR c945 p diode zener ZD c2 5.6v zener transistor zc scr 400v 1N4005

transistor A733

Abstract: transistor a733 pnp A733 TO-92 Plastic-Encapsulate Transistors Transistor(PNP) FEATURES Power dissipation o P CM :0.25 W (Tamb=25 C) Collector current I CM :-0.1 A Collector-base voltage V (BR)CBO :-60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C TO-92 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ELECTRICALCHARACTERISTICS o (Tamb=25 C unless otherwise specified) Parameter , CHARACTERISTICS A733 Free Air 250 200 150 100 50 0 25 50 75 100 125 -100
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Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 A733 Plastic-Encapsulate Transistors TO-92 TRANSISTOR(PNP ) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base , 300-600 Typical Characteristics A733 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original

A733P

Abstract: transistor a733 pnp A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank A733-R A733-Q A733-P A733-K Range 90~180 135~270 200~400 300~600 D A B C D E F , . Page 1 of 2 A733 Elektronische Bauelemente -0.1A , -60V PNP Plastic-Encapsulated Transistor
SeCoS
Original
A733R a733p transistor a733q A733K A733(C)T A733 DATASHEET

A1244

Abstract: Transistor a1244 A 1244 A733 â'¢ â'¢ > o o 5 Irt QUIESCENT CURRENT , »733 A1244 I I SHORT CIRCUIT PROTECTION Tf=25°C I V|N=V0UTt1V \ V A1 44. \ > L \ A733
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SPT115 Transistor a1244 A733 application note 2SA733 transistor equivalent a124* transistor A 1244 KT115

A13B1

Abstract: B 3#17; 3= 1 B 3; A733 1 A 31 A 3#17; 3#19;E#20; 8 3B 1 873; 1 3 3A #30;#25;#29;5"4 1 9 8 38 3
New Japan Radio
Original
A13B1 96ABCADEF CDE33AAF 137-E 01C3B2 1399F A1B83B9F

ma733pc

Abstract: juA733 Differential Video Amplifier FAIRCHILD A Schlumberger Company Linear Division Special Functions Description Connection Diagram 10-Lead Metal Package (Top View) The ju A733 is a monolithic two-stage differential input, dif­ ferential output video amplifier constructed , following specifications apply over the range of - 5 5 ° C < T A < 125°C for ^A733 and 0°C < T a < 70 , t . = 70°C -1 5 -1 0 -5 S 10 15 T IM E â'" ru 11-42 20 25 //A733
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ma733pc PC07950F PC07980F

A733

Abstract: transistor BR A733 Q 75 Hanum TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURES Powe dissipation PCM : 0.25 W (Tamb=25°C) Collecto cu ent ICM : -0.1 A Collecto -base voltage V(BR)cbo : -60 V Ope ating and storage junction temperature range Tj. J^g.-55'C to +150°C ELECTRICAL CHARACTERISTICS (T mb=25°C unless otherwise specified) TO-92 I c 3 1.EMITTER 2.COL LECTOR 3. BASE V â  2 , 90-180 135-270 200-400 300-600 http://www.harom.cn Typical Characteristics Hanum A733 TOTAL POWER
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transistor BR A733 Q 75
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