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A642 transistor pnp

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Abstract: inputs, 8 transistor (sinking) outputs Two line-driver inputs Two line-driver outputs CP1H-XA40DR-A CP1H-XA40DR-A , inputs, 16 transistor (sinking) outputs, 4 analog inputs, 2 analog outputs CP1H-X40DR-A CP1H-X40DR-A CP1H-X40DT-D CP1H-X40DT-D 100-240 VAC, 24 DC inputs, 16 relay outputs 24 VDC, 24 DC inputs, 16 transistor (sinking) outputs , CP1L-M60DR-D CP1L-M60DR-D CP1L-M60DT-D CP1L-M60DT-D CP1H-XA40DT1-D CP1H-XA40DT1-D CP1H-X40DT1-D CP1H-X40DT1-D 24 VDC, 24 DC inputs, 16 transistor (sourcing) outputs, 4 analog inputs, 2 analog outputs 24 VDC, 24 DC inputs, 16 transistor (sourcing) outputs 24 ... Original
datasheet

24 pages,
5113.78 Kb

CP1W-20EDR1 CP1w-mad11 CP1H-XA40DT-D CP1W-ETN61 CP1L-L14DR-A CP1H-XA40DR-A CP1W-EXT01 CP1L-M60DR-D Omron Sysmac Cp1l CP1W-8ED CP1L-L10DR-A CJ1W-DA08V CP1H-X40DT1-D CP1L-M40DR-A datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
389.19 Kb

A642 A642L A642S TRANSISTOR AT316 MEL12 2sc371 transistor 2SC649 A640S micro transistor 1203 2sc362 DP1010 2SC37 2SC871 A642 transistor to 92 datasheet abstract
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Abstract: 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

2 pages,
188.79 Kb

A607 A604 A603 VCEO-20V A610S A1480 A640S A641 transistor ICB01 smd diode S6 6D x56a A642 transistor a640 A608 N A641 NPN transistor datasheet abstract
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Abstract: ) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
394.32 Kb

UC23 40468 a608 A641 NPN transistor BC327 figure DFNA3-100 DG-34 transistor FM1108 HSC3921 k1001 K1202 SI235N T018 BFS28 NPN110 NPN110 abstract
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Abstract: ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , :hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L A642L* A642S A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a ... OCR Scan
datasheet

4 pages,
399.7 Kb

1203 6d A641 NPN transistor A642L ML111 ML111B ML131B ML132A ML132B MT131B MT132A MT132B RN1030 transistor k1502 SD5011 2N3379 NPN110 NPN110 abstract
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Abstract: ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , :hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L A642L* A642S A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a ... OCR Scan
datasheet

4 pages,
400.95 Kb

DNX4 DP1009 E-501 FM1111 FZIT transistor 1201 1203 1205 T018 SI216N SI213N SI215N SI214N A642 transistor to 92 TIXS78 D1303 A641 NPN transistor NPN110 NPN110 abstract
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Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , valves given for BV , cbo. BV and BV . ceo, ebo. II 4. SILICON PNP - LOW POWER TRANSISTORS IN ORDER , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
381.5 Kb

DP1010 a608 A611L A641 NPN transistor A641 transistor BC406 CD912 D29A10 D29A12 D29A7 D29A8 D29A9 2n327 datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
383.11 Kb

THP35 THP61 THP62 cs2643 2SC540 DP1010 4C29 A642 transistor to 92 2N906 2N903 A641 NPN transistor A642 transistor pnp ST25B ST25A transistor BC327 figure datasheet abstract
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Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob ... OCR Scan
datasheet

4 pages,
394.68 Kb

2SC363 2SC369G/BL A640S A641 A641 NPN transistor A641L A641S TRANSISTOR AT316 A642L A642S BC151 A642 AT316 TRANSISTOR 2SC870 datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob ... OCR Scan
datasheet

4 pages,
393.54 Kb

A641L A640S A641 transistor 2SC871 A641S 2SC649 A641 A642L A642S A649L BC114A 2SC37 A641 NPN transistor 2sc362 A642 transistor pnp datasheet abstract
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