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A642 transistor pnp

Catalog Datasheet Results Type PDF Document Tags
Abstract: inputs, 8 transistor (sinking) outputs Two line-driver inputs Two line-driver outputs CP1H-XA40DR-A CP1H-XA40DR-A , inputs, 16 transistor (sinking) outputs, 4 analog inputs, 2 analog outputs CP1H-X40DR-A CP1H-X40DR-A CP1H-X40DT-D CP1H-X40DT-D 100-240 VAC, 24 DC inputs, 16 relay outputs 24 VDC, 24 DC inputs, 16 transistor (sinking) outputs , CP1L-M60DR-D CP1L-M60DR-D CP1L-M60DT-D CP1L-M60DT-D CP1H-XA40DT1-D CP1H-XA40DT1-D CP1H-X40DT1-D CP1H-X40DT1-D 24 VDC, 24 DC inputs, 16 transistor (sourcing) outputs, 4 analog inputs, 2 analog outputs 24 VDC, 24 DC inputs, 16 transistor (sourcing) outputs 24 ... Original
datasheet

24 pages,
5113.78 Kb

CP1W-AD041 CP1w-mad11 CP1W-20EDT1 CP1H-XA40DT-D CP1L-M60DR-D CP1W-40EDT1 CP1L-L10DR-A Omron Sysmac Cp1l CJ1W-DA08V CP1W-ETN61 CP1W-8ED CP1W-20EDR1 CP1H-X40DT1-D omron cp1l programming manual datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
389.19 Kb

2SA494 A642S MEL12 TRANSISTOR AT316 2sc362 2sc371 transistor 2SC649 micro transistor 1203 A640S DP1010 TE3845 2SC37 2SC871 TRANSISTOR 2SC870 datasheet abstract
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Abstract: 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

2 pages,
188.79 Kb

A604 A603 VCEO-20V A610L A641 transistor A640S ICB01 smd diode S6 6D x56a A1480 A642 transistor a640 A641 NPN transistor A642 transistor to 92 A608 datasheet abstract
datasheet frame
Abstract: ) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
394.32 Kb

UC23 40468 a608 A641 NPN transistor BC327 figure DFNA3-100 DG-34 transistor FM1108 HSC3921 k1001 K1202 SI235N T018 BFS28 NPN110 NPN110 abstract
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Abstract: ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , :hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L A642L* A642S A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a ... OCR Scan
datasheet

4 pages,
399.7 Kb

1203 6d A641 NPN transistor A642L A649 ML111 ML111B ML131B ML132A ML132B MT131B MT132A MT132B RN1030 transistor k1502 SD5011 NPN110 NPN110 abstract
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Abstract: ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors , :hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L A642L* A642S A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a ... OCR Scan
datasheet

4 pages,
400.95 Kb

CD96 a608 FT57 FZIT transistor 1201 1203 1205 T018 SI216N SI215N ic d1421 SI214N SI213N A642 transistor to 92 TIXS78 D1303 A641 NPN transistor NPN110 NPN110 abstract
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Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , valves given for BV , cbo. BV and BV . ceo, ebo. II 4. SILICON PNP - LOW POWER TRANSISTORS IN ORDER , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
381.5 Kb

DP1010 a608 A611L A641 NPN transistor A641 transistor BC406 CD912 D29A10 D29A12 D29A7 D29A8 D29A9 2n327 datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob , 1.0 max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642 ... OCR Scan
datasheet

4 pages,
383.11 Kb

THP61 THP62 cs2643 BFX10 2N3128 2N906 2N903 2SC540 A641 NPN transistor A642 transistor to 92 4C29 A642 transistor pnp ST25B 2N905 BC327 figure datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob ... OCR Scan
datasheet

4 pages,
394.68 Kb

A641S 2SC377 2SC369G/BL A642L A642S 2SC363 BC151 2SC362 TRANSISTOR AT316 A641 2SC1285 A642 AT316 2SC871 2SC650 datasheet abstract
datasheet frame
Abstract: uses - Noise figure 8db or below t - Plastic package 7o - Overlay 2. GERMANIUM PNP UNE n TYPE , 100n 5.00 10u 200 10 3.5p PL0 X56 A 5 A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 , 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 - Maximum $ - Cob ... OCR Scan
datasheet

4 pages,
393.54 Kb

2N3407 2SC1285 2SC649 2SC871 A640S A641 A641 transistor A641L A641S BC114A A649L A642S A642L A642 transistor pnp A641 NPN transistor datasheet abstract
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