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Part Manufacturer Description Datasheet BUY
OPA642N/3K Texas Instruments Wideband Low Distortion Operational Amplifier 5-SOT-23 visit Texas Instruments
OPA642N/250 Texas Instruments Wideband Low Distortion Operational Amplifier 5-SOT-23 visit Texas Instruments
OPA642NB/3K Texas Instruments Wideband Low Distortion Operational Amplifier 5-SOT-23 visit Texas Instruments
OPA642NB/250 Texas Instruments Wideband Low Distortion Operational Amplifier 5-SOT-23 visit Texas Instruments
OPA642NB-3K Texas Instruments OP-AMP, 1000uV OFFSET-MAX, 210MHz BAND WIDTH, PDSO5, SOT-23, 5 PIN visit Texas Instruments
OPA642NB-250 Texas Instruments OP-AMP, 1000uV OFFSET-MAX, 210MHz BAND WIDTH, PDSO5, SOT-23, 5 PIN visit Texas Instruments

A642 transistor pnp

Catalog Datasheet MFG & Type PDF Document Tags

A642 transistor pnp

Abstract: BC150 transistor NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 10 3.5p PL*0 X36a 6 A642L* 200m , max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A
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A642 transistor pnp BC150 transistor A641 TRANSISTOR A641 NPN transistor TRANSISTOR A642 2SC650 FM1208 FM1210 FM1211 VCEO-20V FT4020 FT4021

A642 transistor pnp

Abstract: a603 transistor Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A VBE1/VBE2-3.0mV max;hFE1/hFE2
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a603 transistor A608 transistor pnp transistor A608 A608 N A608 A1480 FT4022 BVCEO-45V ICBO-10 BVCEO-60V FT4023 FT4024

2SK19GR

Abstract: X70a Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1Ã'SSMAX RATINGS« ÃS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A VBE1/VBE2-3.0mV max;hFE1/hFE2
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HSC3921 2SK19GR X70a 2SK19Y DFNA3-100 K1201 DG-34 transistor FT4025 BVCE0-60V HSC3954

2n327

Abstract: D29A10 NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , . SILICON PNP â  LOW POWER TRANSISTORS IN ORDER OF |1) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A
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2n327 D29A10 D29A12 D29A7 D29A8 D29A9

OMRON CP1L-M30DR-A manual

Abstract: CP1L-M60DR-A 24 VDC, 12 DC inputs, 8 transistor (sinking) outputs Two line-driver inputs Two line-driver outputs , VDC, 24 DC inputs, 16 transistor (sinking) outputs, 4 analog inputs, 2 analog outputs CP1H-X40DR-A CP1H-X40DT-D 100-240 VAC, 24 DC inputs, 16 relay outputs 24 VDC, 24 DC inputs, 16 transistor (sinking , transistor (sourcing) outputs, 4 analog inputs, 2 analog outputs 24 VDC, 24 DC inputs, 16 transistor (sourcing) outputs 24 VDC, 36 DC inputs, 24 transistor (sinking) outputs CP1L-M60DT1-D 24 VDC, 36
OMRON
Original
OMRON CP1L-M30DR-A manual CP1L-M60DR-A manual CP1W-AD041 CP1H-XA40DT1-D omron cp1l programming manual CP1L-M40DR-A NL-2132 R08I-E-05

P1027

Abstract: SD5011 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â'" Maximum $ - Cob §- C , max;VBE(1-2) 3.0mV max. Pt 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L
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P1027 SD5011 RN1030 UC-41 2N3379 2N4088

A642 transistor pnp

Abstract: D1302 ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1Ã'SSMAX RATINGS« ÃS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , 300mW both sides:hFE1/2 1.0 max;VBE(1-2) 3.0mV max. 16 17 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s
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D1302 d1302 transistor transistor D1303 FT57 D1103 D1303

transistor a640

Abstract: transistor A608 Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A VBE1/VBE2-3.0mV max;hFE1/hFE2
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transistor a640 2SC634 A643S A608 transistor FV918 A607

2SC650

Abstract: TRANSISTOR BC151 NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 10 3.5p PL*0 X36a 6 A642L* 200m
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TRANSISTOR BC151 2SC37 2SC1285 2SC369G/GR TRANSISTOR AT316 2SC871 2SA405 GME9021 PET9003 300MS 300MSA PET9021

2SC650

Abstract: 2SC871 NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 10 3.5p PL*0 X36a 6 A642L* 200m
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2SC709 2SC709 C BC114A TRANSISTOR 2SC870 2SC350 2SC870 FV3299 200MSA NS949 200M5A NS950 S18000

ST25C transistor

Abstract: TRANSISTOR st25a Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , 18 A642* A642L* A642S* 6 6 6 N0 N-PL0 N-PL0 s s s X36a X56a X56 A A VBE1/VBE2-3.0mV max;hFE1/hFE2
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ST25C transistor TRANSISTOR st25a ST25A 2N904 2N905 ST25A transistor

2SC650

Abstract: TRANSISTOR 2SC870 NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits , A642* 200m 60. MS 2.0m ♦J 30 30 5.0 30m ,10u 5.00 .O1m0 400 10 3.5p PL*0 X36a 6 A642L* 200m
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A642 2SA494 2sc362 A649L 2SC374 2N3407 BSW81 FM2894 MM2894 400MIA 400MSA MPS2894

ECG transistor replacement guide book free

Abstract: LS 2027 audio amp germanium type and 0.6 volts for silicon). A PNP transistor should show the base 0.2 to 0.65 volts , volts . 15 ma . 70 mw RS-2004 PNP LOW POWER ALLOY-JUNCTION GERMANIUM TRANSISTOR General , 11 RS-2005 PNP LOW POWER ALLOY-JUNCTION GERMANIUM TRANSISTOR General Purpose Audio , -2007 PNP LOW POWER ALLOY-JUNCTION GERMANIUM TRANSISTOR High-Frequency Transistor for Switching and , ) 1 /isec (typical) 27 RS-2021 PNP EPITAXIAL PLANAR SILICON TRANSISTOR Medium-Power
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ECG transistor replacement guide book free LS 2027 audio amp 980510 2sb337 2N339 C24850772

triac zd 607

Abstract: motorola c6004 positive, the transistor is NPN, if the voltage reading is negative, the transistor is PNP. 2. Germanium , (resistors, coils, etc.) that might have been damaged if the original transistor was shorted. In most auto radio output stages, check emitter resistor (replacement transistor will be permanently damaged if this , replacement can be determined by following a few simple procedures. 1. NPN or PNP - The schematic symbol , the device is PNP. PNP NPN If a schematic or symbol is not available, the polarity can be
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triac zd 607 motorola c6004 2SC 968 NPN Transistor sje 607 transistor c828 bf197 ZY12A Z0215 ZT280 ZT2369 ZT2369A ZY12B

D64dS

Abstract: 29f64 .66 NPN Silicon Power Transistors.67,68 PNP Silicon POwer Transistors , technical data referencing obsolete Devices.) Facilitates substitution when used with the Transistor D.A.T.A
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D64dS 29f64 DD6-103 1N311 crydom s441 29f1615

SAA1029 equivalent

Abstract: TDA1060 Mixer/Oscillator Low Power FM IF System SM PS Control Circuit Transistor Array Transistor Array
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NE5205 SAA1029 equivalent TDA1060 TDA1060/k2645 equivalent NE5170 NE5180/5181 DAC800 NE5260 NE5212