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A1077-1/8

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 0.8 1 0.4 0.2 0.5 0.5 2 TL 0 to 0.1 1 : Base 2 : Emitter 3 : Collector SMCP Electrical Connection 3 0.75 0.6 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 82212 TKIM/51408AB TIIM TC-00001355 No. A1077-1/8 2SC5231A Electrical Characteristics at , IEBO hFE fT Cob Cre 2 S21e 1 2 S21e 2 Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=20mA VCE , * : The 2SC5231A is classified by 20mA hFE as follows : Rank hFE 7 60 to 120 8 90 to 180 9 135 to 270 ON Semiconductor
Original
ENA1077A 2SC5231A-8-TL-E 2SC5231A-9-TL-E SC-75 A1077-8/8
Abstract: 0.5 0.5 Electrical Connection 1 : Base 2 : Emitter 3 : Collector 3 SANYO : SMCP 1 2 http://www.sanyosemi.com/en/network/ 82212 TKIM/51408AB TIIM TC-00001355 No. A1077-1/8 , 2SC5231A-8-TL-E 2SC5231A-9-TL-E Packing Type: TL 0.8 RANK C LOT No. 1 0.4 Marking LOT , Figure µA 10 VCB=10V, f=1MHz 2 S21e 1 Forward Transfer Gain Unit max 1.0 , 2SC5231A is classified by 20mA hFE as follows : Rank hFE 7 60 to 120 8 90 to 180 9 135 to SANYO Electric
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A1077-1/8

a1077

Abstract: follows : Marking C7 C8 C9 Rank 7 8 9 hFE 60 to 120 90 to 180 135 to 270 Any and all SANYO Semiconductor , equipment. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001355 No. A1077-1/6 2SC5231A Continued from preceding , Transfer Gain Noise Figure Symbol fT Cob Cre 2 S21e 1 2 S21e 2 Conditions VCE=5V, IC=20mA VCB=10V, f , : mm (typ) 7027-002 0.4 1.6 0.8 0.4 0.2 1.6 0.5 0.5 1 2 3 0.1 0.3 0 to
SANYO Electric
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a1077 ENA1077 A1077-6/6

A1077

Abstract: 2SC5231A 2SC5231A No. N A 1 0 7 7 N NPN 2SC5231A VHF UHF NF=1.0dB typf , 2SC5231A 20mA hFE hFE C7 7 60 120 C8 8 90 180 C9 9 135 270 AV 370-0596 11 51408AB TI IM TC-00001355 No. A1077-1/6 2SC5231A unit : mm (typ) 7027-002 1.6 0.8 0.4 1.6 0.5 0.5 0.3 0.2 0.4 1 2 0 to 0.1 0.75 0.6 0.1 3 1 : Base 2 , =1GHz 8 6 4 2 0 3 12 10 V CE = 5V V CE = 2V VCE=5V f=1GHz S21e2 - IC
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ITR07968 ITR07964 ITR07963 ITR07965 A1077-3 ITR07966 ITR07967 A1077-1/6 A1077-5/6

2SC5231A

Abstract: A1077 8 9 hFE 60 to 120 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products , ., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001355 No. A1077-1/6 , Transfer Capacitance min VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz 2 S21e 1 2 S21e 2 Forward , Package Dimensions unit : mm (typ) 7027-002 1.6 0.8 0.4 1.6 0.5 0.5 0.3 0.2 0.4 1 2 0 to 0.1 0.75 0.6 0.1 3 1 : Base 2 : Emitter 3 : Collector 0.1 MIN SANYO
SANYO Electric
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marking c7
Abstract: : Marking Rank hFE C7 7 60 to 120 C8 8 90 to 180 C9 9 135 to 270 Any and all SANYO , equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001355 No. A1077-1/6 2SC5231A Continued from preceding page. Parameter Symbol , =1GHz 2 ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 Forward Transfer Gain Noise Figure 5 7 GHz 0.7 , 0.8 0.4 1.6 0.5 0.5 0.3 0.2 0.4 1 2 0 to 0.1 0.75 0.6 0.1 3 1 SANYO Electric
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032-l

Abstract: 12 19 221 041 . ALL R'GHTS RESERVED. LOC AJ 0A MAXâ'" 02.67 MAXJ [. 1 05] XX â 10.77 MAX [.424] DIST 16 REVISIONS LTR DESCRIPTION REVISED PER 0S14-0355-03. DATE 31DEC03 DWN JGH 1 . BERYLLIUM COPPER PER ASTM-B-197. A , 1 .22 ".048l A 3-221 1 49-6 0.41 r.oi 6i A 3-221 1 49-1 1.14 ~.045l A 2-221 1 49-6 0.64 r.025l A 2-221 1 49-1 0.64 r.025l A 2-221149-0 O.64 r.025l A 1 -221 1 49-9 0.81 r.032l A 1 -221 149-4 O.S1 r.032l A 1 -221 1 49-3 0.81 r.032l A 1 -221 1 49-2 1 .07 ".0421 A 221 1 49-7 1 .07 ".0421 A 221 1 49-6 1
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OCR Scan
QQ-S-365 032-l 12 19 221 041 12 19 221 081 MIL-G-45204 ASTM-B-545 15JAN96 23FEB95

transistor A1045

Abstract: under all conditions. The 1511 Series amplifiers are available in either the TO-8 hermetic case or connectored TC-1 package. UTOâ'"TO-8U â'¢ Noise Figure: 3.5 dB (Typ) â'¢ Low Power Consumption , + CASE GROUND UTCâ'"TC-1 RF IN RF OUT V+ Maximum Ratings Parameter Maximum V+ RFIN , (MIL-HDBK-217E, AUF @ 90°C) 105°C/W 43 mW 5°C 1,421,000 Hrs. Weight: (typical) UTO â'"2.1 grams , Gain (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB Comp. (Min.) Input VSWR
Teledyne Cougar
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transistor A1045

TEA 1091

Abstract: 2Sc2565 « 2 RF.SW Si. E -60 - 8 -200 300 175 -0.1 -60 70-400 - 1 -10 -10 10 iâ"¢ â"¢ 30nS, tf â'" 30nS /.us , 220 * 8 5 138 » 1093 * 2 PA Si. E -120 - 5 -8A 80W {7c=25'C! 150 -50 -120 120 - 5 - 1 A -10 1 A , ¡tc=25°ci 150 -50 -160 110 - 5 - 1 A -10 1 A 60 * 300 1.5 * 102 2sc2523 t ? > -7 '1 » 1074 » 1075 ífí PA Si. P -120 - 5 -12A 120W :tc=25'c) 150 -50 -120 110 - 5 - 1 A 60 * 163 2sc2525 » 1076 » « » -160 - 5 â'" 12A 120W 17y=25'c} 150 -50 -160 110 - 5 - 1 A 60 * 163
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OCR Scan
2SC2564 TEA 1091 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 2SC2565

transistor a1175

Abstract: a1077 TO-8 hermetic case or connectored TC-1 package. UTOâ'"TO-8U â'¢ High Reverse Isolation: 49 dB , Mixer Amp GROUND RF IN RFOUT V+ CASE GROUND UTCâ'"TC-1 RF IN â'¢ Communications , Isolation (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB Comp. (Min.) Input VSWR , Tone 2nd Harmonic Intercept Point DC Current 10-1000 11.5 43.0 ± 0.5 5.5 +10.0 1.8:1 1.8:1 â'" â'" â'" â'" 10-1000 13.0 49.0 ± 0.2 4.2 +11.5 1.4:1 1.4:1 +22.0 +23.0 +28.0 34
Teledyne Cougar
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transistor a1175

transistor a684

Abstract: a684 transistor amplifiers are available in either the TO-8 hermetic case or connectored TC-1 package. UTOâ'"TO-8T â , UTCâ'"TC-1 RF IN RF OUT V+ Maximum Ratings Parameter V+ RFIN GROUND RFOUT DC , (MIL-HDBK-217E, AUF @ 90°C) 75°C/W 400 mW 30°C 1,291,000 Hrs. Weight: (typical) UTO â'"2.1 grams , Gain (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB Comp. (Min.) Input VSWR , Tone 2nd Harmonic Intercept Point DC Current 5-1000 10.0 ± 1.0 6.5 +14.0 2.0:1 2.0:1 â'" â
Teledyne Cougar
Original
transistor a684 a684 transistor transistor a873

transistor A1207

Abstract: TO-8 hermetic case or connectored TC-1 package. UTOâ'"TO-8U â'¢ Noise Figure: 3.5 dB (Typ) â , GROUND RF IN V+ CASE GROUND UTCâ'"TC-1 RF IN RF OUT V+ Maximum Ratings Gain , Volts +13 dBm â'"55 to +125°C â'"62 to +150°C +125°C 5 4 3 1600 0 1 Thermal , (MIL-HDBK-217E, AUF @ 90°C) 400 800 1200 Frequency, MHz 105°C/W 43 mW 5°C 1,421,000 Hrs. Note 1: For further information, see Reliability Screening, Pub. 5963-3240E. Weight: (typical) UTOâ
Agilent Technologies
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transistor A1207 1500MH 5963-2498E

k a1046

Abstract: 1.75 2.00 0 â'"1 â'"2 â'"3 â'"4 â'"5 â'"6 â'"7 â'"8 â'"9 â'"10 Control , '"9 10 â'"8 â'"10 0 â'"1 â'"2 â'"3 â'"4 â'"5 â'"6 â'"7 â'"8 â'"9 â , because the linearizer is housed in the same single TO-8 package weighing 2.1 grams. UTF-030, TO , Control GROUND RF IN RF OUT V+ CONTROL TC-1 RF IN RF OUT V+ â'¢ AGC , 20.0 ±2.0 dB dB ± 0.6 1.6:1 1.6:1 +45.0 5 .002/dB 15/45 â'"10/35 ± 1.5 2.0:1 2.0
Teledyne Cougar
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k a1046 UTF-035
Abstract: 10 40µA 5 20µA 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE â'" V 12 8 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE â'" V , [2SC5375] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 2 0.65 0.65 0.3 0.6 0.9 2.0 1 , 3 5.2 1.0 GHz 1.5 pF 0.7 VCE=3V, IC=7mA, f=1GHz 8 pF 10 dB 1.4 , . SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku SANYO Electric
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ENN5541A 2059B
Abstract: ] VOUT [V] 1. Output voltage (VOUT) vs. Temperature (Ta) 60 10 9 8 7 6 5 4 3 2 1 0 , . Land PF004-A 1 CMOS TEMPERATURE SENSOR IC S-5813A/5814A Series Rev.1.1_00 Block Diagram VDD VOUT Temperature sensor VSS Figure 1 2 Seiko Instruments Inc. CMOS TEMPERATURE , -5813A/5814A Series can be selected at the userâ'™s request. Please refer to â'1. Product nameâ' for the construction of the product name and â'2. Product name listâ' for the full product names. 1. Product name Seiko Instruments
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S-5813A S-5814A
Abstract: '30°C 0°C 30°C Temperature (Ta) Figure 8 *1. VOUT value at Ta = 100°C [V] . *2. VOUT value at , ) 60 10 9 8 7 6 5 4 3 2 1 0 Ta = â'40°C Ta = 30°C Ta = 100°C 2.0 3.0 4.0 5.0 6.0 , HB004-B 1 CMOS TEMPERATURE SENSOR IC S-5815A/5816A Series Rev.1.1_00 Block Diagram VDD VOUT Temperature sensor VSS Figure 1 2 Seiko Instruments Inc. CMOS TEMPERATURE SENSOR , -5815A/5816A Series can be selected at the userâ'™s request. Please refer to â'1. Product nameâ' for the Seiko Instruments
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S-5815A S-5816A

transistor a708

Abstract: a708 transistor T0-8 hermetic package or the connectored TC-1 package. UTOâ'"TO-8T â'¢ Low Power Consumption , IF Gain Stages GROUND RF IN RFOUT V+ CASE GROUND UTCâ'"TC-1 RF IN RF OUT V , Frequency Range Small Signal Gain (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB , +14.5 2.0:1 2.0:1 â'" â'" â'" â'" 5-120 27.5 ± 0.3 1.7 +16.0 1.5:1 1.3:1 +26.0 +33.0 , 2.0:1 2.0:1 â'" â'" â'" â'" Typical Performance Over Temperature (@ +15 VDC unless otherwise
Teledyne Cougar
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transistor a708 a708 transistor 15VDC
Abstract: amplifiers are available in either the TO-8 hermetic case or connectored TC-1 package. UTOâ'"TO-8U â , /RF Amplification â'¢ Pre/Post Mixer Amp GROUND RF IN RFOUT V+ CASE GROUND UTCâ'"TC-1 , Temperature Above Case Temperature 105°C/W 150 mW 16°C Note 1: For further information, see , .) Reverse Isolation (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB Comp. (Min , :1 1.8:1 â'" â'" â'" â'" 10-1000 13.0 49.0 ±0.2 4.2 +11.5 1.4:1 1.4:1 +22.0 +23.0 Agilent Technologies
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1000MH 5963-2501E

transistor a708

Abstract: available in either the T0-8 hermetic package or the connectored TC-1 package. UTOâ'"TO-8T â'¢ Low , â'¢ Receiver IF Gain Stages GROUND RF IN RFOUT V+ CASE GROUND UTCâ'"TC-1 RF IN , 1.0 23 120 1 Thermal Characteristics 0 10 θJC Active Transistor Power Dissipation , , MHz 105°C/W 162 mW 17°C 653,900 Hrs. Note 1: For further information, see Reliability , +85°C Characteristic 10-100 26.5 ±1.0 2.2 +14.5 2.0:1 2.0:1 â'" â'" â'" â'" 5-120
Agilent Technologies
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100MH 5963-2483E

A1943 transistor

Abstract: A1943 Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT , PHEMT CASE 466â'03, STYLE 1 PLDâ'1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol , Value Unit Drainâ'Source Voltage Storage Temperature Range Channel Temperature (1 , Methodology Per JESD 22â'A113, IPC/JEDEC Jâ'STDâ'020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the operating channel temperature should not exceed 150Â
Freescale Semiconductor
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A1943 transistor A1943
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