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OPA1013 Texas Instruments DUAL OP-AMP, UUC8, DIE-8 visit Texas Instruments
OPA1013AMH Texas Instruments DUAL OP-AMP, 300uV OFFSET-MAX, 0.8MHz BAND WIDTH, MBCY8, TO-99, 8 PIN visit Texas Instruments
OPA1013ACH Texas Instruments DUAL OP-AMP, 240uV OFFSET-MAX, 0.8MHz BAND WIDTH, MBCY8, TO-99, 8 PIN visit Texas Instruments
OPA1013CH Texas Instruments DUAL OP-AMP, 400uV OFFSET-MAX, 0.8MHz BAND WIDTH, MBCY8, TO-99, 8 PIN visit Texas Instruments
OPA1013CN8 Texas Instruments Precision, Single-Supply Dual Operational Amplifier 8-PDIP 0 to 70 visit Texas Instruments Buy
OPA1013DN8G4 Texas Instruments Precision, Single-Supply Dual Operational Amplifier 8-PDIP 0 to 70 visit Texas Instruments

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A1013 Datasheet

Part Manufacturer Description PDF Type
A-101-3 Apollo Weighing Sensor Original
A1013 Shanghai Sunrise Electronics Silicon PNP Epitaxial Transistor Original
A10137 Antenova RF Antennas, RF/IF and RFID, ANTENNA GPS 1575MHZ SMD Original

A1013

Catalog Datasheet MFG & Type PDF Document Tags

A1013

Abstract: '" â'"1013 614 2 1 DCâ'"/GND â'"1013 494 3 2 GND â'"1013 247 4 3 VDD/DC+ â'"1013 92 5 4 DCEN â'"1013 â'"91 6 5 VBAT â'"1013 â'"315 7 6 RST/C2CK â'"1013 â'"626 8 7 P2.7/C2D â'"1013 â'"810 9 8 P2.6/WR â'"810 â'"1013 10 9 XTAL4 â'"525 â'"1013 11 10 XTAL3 â'"303 â'"1013 12 11 P2.5/RD â'"54 â'"1013 13 12 P2.4/ALE 130 â'"1013 14 13 P2
Silicon Laboratories
Original
C8051F930-GDI

A1013

Abstract: 1013 ) Physical Pad Y (µm) 1 Reserved* â'" â'"1013 614 2 1 DCâ'"/GND â'"1013 494 3 2 GND â'"1013 247 4 3 VDD/DC+ â'"1013 92 5 4 DCEN â'"1013 â'"91 6 5 VBAT â'"1013 â'"315 7 6 RST/C2CK â'"1013 â'"626 8 7 P2.7/C2D â'"1013 â'"810 9 8 P2.6/WR â'"810 â'"1013 10 9 XTAL4 â'"525 â'"1013 11 10 XTAL3 â'"303 â'"1013 12 11 P2.5/RD â'"54 â'"1013 13
Silicon Laboratories
Original
1013
Abstract: TECHNOLOGIES CO., LTD A1013-*SA*1 ±0.25m m ZGY(WSC) DRAWING NO. A1013-*SA*M*1 GENERAL ANGLE D RAW N , RELEASE |^ 6 A1013 â'" * S A .1 1: P1014(WSC) 3P~BP S:ONE FRONT TOUCH 'A -
OCR Scan
UL94V-0 2705C 2715C 3385C 3395C

A1013 transistor

Abstract: transistor A1013 A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: High voltage: VCEO=160V Complementary to C2383 Chip Appearance Chip Size 1100um×1100um Chip Thickness 210±20um Bonding Pad Size Base 240um×240um Emitter 330um×260um Front Metal Al Backside Metal Au Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition
Shanghai Sunrise Electronics
Original
A1013 transistor transistor A1013 transistor c2383 a1013 pnp transistor A1013 equivalent A1013 pnp

A1013 transistor

Abstract: transistor A1013 Compound pressure â'"101 kPa type NPN open-collector transistor 0 to â'"101.3 kPa 1 MPa type , Pressure withstandability Gauge pressure 0 to â'"101.3 kPa 0 to 1.000 MPa â'"100.0 to 100.0 kPa 5.1 to â'"101.3 kPa 0.052 to â'"1.033 kgf/cm2, 0.051 to â'"1.013 bar 0.74 to â'"14.70 psi, 38 to â , '"7.2 to 152.2 psi â'"101.3 to 105.0 kPa â'"1.033 to 1.071 kgf/cm2 â'"1.013 to 1.050 bar â'"14.68 to , selectable by key operation) 5.1 to â'"101.3 kPa 0.052 to â'"1.033 kgf/cm2, 0.051 to â'"1.013 bar 0.74 to
Panasonic
Original
61010C-1 S2-0200 CN-63-C2 CN-63-C5 BXA-001T-P0 XAP-03V-1

transistor A1013

Abstract: A1013 TC-00001100 No. A1013-1/4 3HN04CH Continued from preceding page. Parameter Symbol Turn-ON , Temperature, Ta - °C 120 140 160 IT10824 No. A1013-2/4 3HN04CH yfs - ID 5 VGS , 80 100 120 Ambient Temperature, Ta - °C 140 160 IT13183 No. A1013-3/4 , , 2008. Specifications and information herein are subject to change without notice. PS No. A1013-4/4
SANYO Electric
Original
br a1013 a1013 transistor datasheet mosfet a1013 transistor A1013 data ENA1013 A1013-4/4
Abstract: production demands. Vacuum pressure type (0 to â'"101.3 kPa) â'¢ M5 male thread â'¢ R (PT) 1/8 male , male thread DPH-A30 Vacuum pressure DPH-A00 0 to â'"101.3 kPa PARTICULAR USE SENSORS , pressure: 0 to â'"101.3 kPa Positive pressure: 0 to 1.000 MPa Compound pressure: â'"100.0 to 100.0 kPa , withstandability Gauge pressure 0 to â'"101.3 kPa 0 to 1.000 MPa â'"100.0 to 100.0 kPa 500 kPa , Vacuum pressure: 0 to â'"101.3 kPa, Positive pressure: 0 to 1.000 MPa, Compound pressure: â'"100.0 to Panasonic
Original
DPC-L100/ DPH-L100 DPS-400/ DPH-100 DPC-100/ YC-692R

transistor c2383

Abstract: C2383 C2383 C2383 Silicon NPN Epitaxial Transistor Description :The C2383 is designed for color TV class B sound output applications Features: High voltage: VCEO=160V Complementary to A1013 Chip Appearance Chip Size 1100um×1100um Chip Thickness 210±20um Bonding Pad Size Base 240um×240um Emitter 330um×260um Front Metal Al Backside Metal AuAs Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition
BCD Semiconductor
Original
c2383 transistor transistor c2383 0 C2383 NPN Transistor c2383 equivalent VCEO160V Datasheets C2383
Abstract: W Typical (Force line, Non-Kelvin connection) Voltage measurement input resistance: ³1013 W Current source output resistance: ³1013 W (1 nA range) Current compliance setting accuracy (for , resistance: ³1013 W Current source output resistance: ³1013 W (1 nA range) Current compliance setting Agilent Technologies
Original
E5272A E5273A E5270 5988-7387EN
Abstract: resistance: ³1013 W Current source output resistance: ³1013 W (1 nA range) Current compliance setting , resistance: ³1013 W Current source output resistance: ³1013 W (1 nA range) Current compliance setting Agilent Technologies
Original
E5270A 5988-7380EN

AS85049/74

Abstract: '' (10.2) 16 â''.450 â''(11.4) â''.500 â''(12.7) â''1.013 â''(25.7) â''1.110 â''(28.2) â''.798 â
Glenair
Original
AS85049/74 AS85049 AS85049/61 M85049/74

G20F

Abstract: G10FS 0.010 to 0.014 Silver -CD- -â'¢-10.13 I-*-Max. Figure 3-G â'¢ FG Series Lead Diameter 0 024 0.50
-
OCR Scan
NV20F NV30F NV40F NV50F NV60F G10FS G20F g6fs G8FS G12FS G15FS
Abstract: resistance: Maximum guard offset voltage: ±1 mV Noise characteristics (typical, filter ON): ³1013 W , range (rms.) ³1013 W (1 nA range) Overshoot (typical, filter ON): Current compliance setting , ) Voltage measurement input resistance: ³1013 W Current source output resistance: ³1013 W (1 nA range Agilent Technologies
Original
E5240BU 5988-8474EN 5988-9162EN

A1013

Abstract: 2SA1013 Cob IC = -500 mA, IB = -50 mA VCE = -5 V, IC = -5 mA R: 60~120, O: 100~200 A1013
-
Original
2SA1013 2SC2383 2SC2383 equivalent 20070701-JA

for full adder and half adder

Abstract: 2-bit half adder -1 S12-15 B12-15 A10-13 B10-13 A8-11 4-Bit Adder S8-11 B8-11 A6-9 B6-9 A4-7 4 , , Subtracters and Accumulators in XC3000 COUT COUT A12-13 B12-13 2-Bit Adder COUT S12-13 A10-13
Xilinx
Original
for full adder and half adder 2-bit half adder datasheet for full adder and half adder 74181 ALU alu 74181 SN 74181 XC3000A XC3100A C3000 S10-13 X3131 XC3100-3

A1013 equivalent

Abstract: C30900E 8 S! 6 X 4 3 ï 3 2 1- ¡10-13 § « « 6 tr, i « 2 10-14 VR =90V TA-22° C
-
OCR Scan
C30900E 000G123 KLS-4223R1

26z5

Abstract: capacitor 3KF 94 1500 2000 Vdc mAdc HOURS mAdc CYCLES NOTES *SEE M IL-E-1C ».10.13 Bu A FULL-WAVE CIRCUIT
-
OCR Scan
26Z5W 26z5 capacitor 3KF Scans-0017374

A1013 transistor

Abstract: A1013 A1013 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates
Toshiba
Original
MARKING A1013 TO-92MOD

a1718

Abstract: transistor a1479 .397 â'"62.1 â'"78.3 â'"101.3 â'"131.7 â'"158.7 177.2 156.7 141.9 127.3 113.9 101.8 92.0
Teledyne Cougar
Original
a1718 transistor a1479 transistor a1015 pin configuration MIL-HDBK-217E

transistor A1277

Abstract: transistor A1286 166.0 150.4 135.9 121.2 107.7 94.0 78.5 60.4 41.3 19.3 â'"5.5 â'"31.6 â'"56.7 â'"81.2 â'"101.3
Teledyne Cougar
Original
transistor A1277 transistor A1286 PP-38

is43

Abstract: '" â'"1013 614 2 1 DCâ'"/GND â'"1013 494 3 2 GND â'"1013 247 4 3 VDD/DC+ â'"1013 92 5 4 DCEN â'"1013 â'"91 6 5 VBAT â'"1013 â'"315 7 6 RST/C2CK â'"1013 â'"626 8 7 P2.7/C2D â'"1013 â'"810 9 8 P2.6/WR â'"810 â'"1013 10 9 XTAL4 â'"525 â'"1013 11 10 XTAL3 â'"303 â'"1013 12 11 P2.5/RD â'"54 â'"1013 13 12 P2.4/ALE 130 â'"1013 14 13 P2
Integrated Silicon Solution
Original
is43 IS43/46R86400D IS43/46R16320D IS43/46R32160D 512-M 43/46R86400D IS43R32160D-5BL

mercury 845

Abstract: IQ32Q Compound pressure â'"101 kPa type NPN open-collector transistor 0 to â'"101.3 kPa 1 MPa type , Pressure withstandability Gauge pressure 0 to â'"101.3 kPa 0 to 1.000 MPa â'"100.0 to 100.0 kPa 5.1 to â'"101.3 kPa 0.052 to â'"1.033 kgf/cm2, 0.051 to â'"1.013 bar 0.74 to â'"14.70 psi, 38 to â , '"7.2 to 152.2 psi â'"101.3 to 105.0 kPa â'"1.033 to 1.071 kgf/cm2 â'"1.013 to 1.050 bar â'"14.68 to , selectable by key operation) 5.1 to â'"101.3 kPa 0.052 to â'"1.033 kgf/cm2, 0.051 to â'"1.013 bar 0.74 to
Synqor
Original
mercury 845 IQ32Q
Abstract: A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: High voltage: VCEO=160V Complementary to C2383 Chip Appearance Chip Size 1100um×1100um Chip Thickness 210±20um Bonding Pad Size Base 240um×240um Emitter 330um×260um Front Metal Al Backside Metal Au Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition Synqor
Original
Abstract: TC-00001100 No. A1013-1/4 3HN04CH Continued from preceding page. Parameter Symbol Turn-ON , Temperature, Ta - °C 120 140 160 IT10824 No. A1013-2/4 3HN04CH yfs - ID 5 VGS , 80 100 120 Ambient Temperature, Ta - °C 140 160 IT13183 No. A1013-3/4 , , 2008. Specifications and information herein are subject to change without notice. PS No. A1013-4/4 Synqor
Original
MQBL-28-12S L-28-1 NAVSO-P3641-A MIL-HDBK-1547A P-3641A MIL-STD-810F
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