NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: A06/03 Seite/page 2/8 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode , A06/03 Seite/page 6/8 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode , Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode 38DN06 38DN06 Elektrische , AC / 08-10-03, M. Droldner A06/03 10.10.03 01 Seite/page 1/8 N Datenblatt / Data sheet Netz-Gleichrichterdiode Rectifier Diode 38DN06 38DN06 Mechanische Eigenschaften / Mechanical ... | Original |
8 pages, |
38DN06 A06 diode 38DN06 abstract |
|
|||
| Abstract: Types A06 Types VCBO 60 80 V Collector-Emitter Voltage A05 Types A06 Types VCEO , Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage A05 Types A06 Types V , A06 Types ICBO - 0.1 uA VCB = 60V, IE = 0 VCB = 80V, IE = 0 hFE 50 - - , that leads are kept at ambient temperature at a distance of 2mm from case. 2. Diode mounted on FR-4 ... | Original |
2 pages, |
MPSA06 D 92 M 03 DIODE MMBTA05 MMBTA06 MPSA05 432 sot23 a06 to92 marking A06 a06 transistor A06 NPN A05 SOT MPSA05/06 MMBTA05/06 MPSA05/06 abstract |
|
|||
| Abstract: 27 28 43 38 2 6 A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 , GND A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 CS3B OEB WEB , D1 D2 D3 D4 D5 D6 D7 11 NC 21 22 U11 27C256 27C256 A00 A01 A02 A03 A04 A05 A06 , VCC_ARROW D524353541 D524353541 R3 R VCC_ARROW VCC_ARROW J15 DIODE J2 RESB 1 C1 C SW1 A00 A02 A04 A06 A08 A10 A12 A14 A16 A18 A20 A22 2 JUMPER1 SW_SPST GND GND D0 D2 ... | Original |
1 pages, |
XC9572 CS3B Diode j2 HEADER28 27C256 PLD45 PLD40 VPB 6-2 PLD53 62c256 PLD33 pld-40 A06 diode PLD32 PLD26 datasheet abstract |
|
|||
| Abstract: VSS OSC14A OSC14A VSS VPB MLB A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 , 38 2 6 A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 CS1B OEB , 19 D0 D1 D2 D3 D4 D5 D6 D7 A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 , R3 GND R 3 4 5 6 7 A08 A10 A06 A13 A09 A14 A16 9 10 11 12 13 14 15 16 R DY A11 PLD19 PLD19 A12 BA0 GND J2 17 18 19 20 21 22 D524353541 D524353541 DIODE 2 8 ... | Original |
1 pages, |
XC9572 diode A23 62C256 27C256 dba1 A06 diode datasheet abstract |
|
|||
| Abstract: J5 VCC_ARROW D1 DIODE A00 A02 A04 A06 A08 A10 A12 A14 A16 A18 A20 A22 R2 R , ] A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 1 22 43 64 OSC14A OSC14A , D2 D3 D4 D5 D6 D7 VCC_ARROW VCC_ARROW U4 62C256 62C256 A00 A01 A02 A03 A04 A05 A06 , ] VCC_ARROW PROTO AREA 8 A00 A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 , A01 A02 A03 A04 A05 A06 A07 A08 A09 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 ... | Original |
1 pages, |
W65C265DB a06 transistor 62C256 diode u2 a05 datasheet abstract |
|
|||
| Abstract: /A-06 March 2002 www.richtek-ic.com.tw 1 RT9173/A RT9173/A Pin Description Pin Name Pin Function , 2 V DS9173/A-06 March 2002 RT9173/A RT9173/A Typical Application Circuit VCNTL= 3.3V VIN = 2.5V , COUT RL and COUT Time delay Fig.2 Current in Shutdown Mode, ISHCLN DS9173/A-06 March 2002 , , VTRIGGER www.richtek-ic.com.tw 4 DS9173/A-06 March 2002 RT9173/A RT9173/A Typical Operating , ) Transient Response 100 8 6 4 2 0 -1 -2 -2 -4 Time (250uS/Div) DS9173/A-06 March 2002 ... | Original |
10 pages, |
RT9173CS RT9173ACM5 RT9173A Capacitor 10uF footprint 2N7002 rt9173 RT9173/A RT9173/A abstract |
|
|||
| Abstract: thermical characteristics. Semiconductor Group 1 Edition A06, 09/96 1) SIEGET® 25 BFP450 BFP450 , 11.0 - dB - 29 - dBm - 19 - dBm ) -1 2 Edition A06, 09/96 , Semiconductor Group 4 3 Edition A06, 09/96 SIEGET® 25 BFP450 BFP450 Power Gain versus Frequency VCE = , Group 120 4 Edition A06, 09/96 SIEGET® 25 BFP450 BFP450 Noise Figure versus Collector Current , AAAAAA -j25 -j100 -j50 0.1 1 GHz 10 f Semiconductor Group 5 Edition A06, 09 ... | Original |
8 pages, |
Q62702-F1590 marking A06 BFP450 f 1405 zs A06 NPN transistor A06 Code "A06" RF Semiconductor a06 transistor BFP450 abstract |
|
|||
| Abstract: 1 Edition A06, 09/96 1) SIEGET® 25 BFP420 BFP420 Electrical Characteristics at TA = 25 °C , , ZL= ZLopt 1) Gms = S 21 S12 Semiconductor Group 2 Edition A06, 09/96 SIEGET® 25 , Ic Semiconductor Group 4 Vcb 3 Edition A06, 09/96 SIEGET® 25 BFP420 BFP420 Power Gain , 4 Vce Semiconductor Group 40 4 Edition A06, 09/96 SIEGET® 25 BFP420 BFP420 Noise , Semiconductor Group 5 Edition A06, 09/96 SIEGET® 25 BFP420 BFP420 Common Emitter S-Parameters S11 S21 ... | Original |
8 pages, |
1685 transistor T502 SOT343-3 BFP420 Code "A06" RF Semiconductor transistor A06 marking A06 Q62702-F1591 ff 0401 a06 transistor AMS 3630 BFP420 abstract |
|
|||
| Abstract: 1 Edition A06, 09/96 1) SIEGET® 25 BFP405 BFP405 Electrical Characteristics at TA = 25 °C , Edition A06, 09/96 SIEGET® 25 BFP405 BFP405 Total Power Dissipation versus Soldering Point Temperature , V Ic Semiconductor Group 4 Vcb 3 Edition A06, 09/96 SIEGET® 25 BFP405 BFP405 Power , Vce Semiconductor Group 16 4 Edition A06, 09/96 SIEGET® 25 BFP405 BFP405 Noise Figure , -j100 -j50 0.1 1 GHz 10 f Semiconductor Group 5 Edition A06, 09/96 SIEGET® 25 ... | Original |
8 pages, |
Code "A06" RF Semiconductor BFP405 a06 transistor 165 marking A06 marking AAAA a06 transistor BFP405 abstract |
|
|||
| Abstract: /A-06 August 2007 www.richtek.com 1 RT9607/A RT9607/A Pin Configurations PHASE1 VCC PWM1 , PHASE2 GND LGATE2 PGND 3 6 BOOT2 10 Optional www.richtek.com 2 DS9607/A-06 , (17) GND DS9607/A-06 August 2007 Phase point is the connection point of high side MOSFET source , LGATE2 PGND DS9607/A-06 August 2007 RT9607/A RT9607/A Absolute Maximum Ratings (Note 1) Supply , 1.0 - V Power-On Reset To be continued DS9607/A-06 August 2007 www.richtek.com 5 ... | Original |
15 pages, |
mosfet a06 PHB83N03LT POWER MOSFET PHB95N03LT a06 mosfet rt9607 data RT9607A rt9607 RT9607/A RT9607 RT9607/A abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| * * ; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) * www.datasheetarchive.com/files/diodes-inc/spice-model/3252.mod |
Diodes, Inc. | 04/09/2012 | 0.4 Kb | MOD | 3252.mod |
| * * ; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A06 D *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us www.datasheetarchive.com/files/diodes-inc/spice-model/spicemodels_diodes_standard-rectifiers.txt |
Diodes, Inc. | 04/09/2012 | 18.69 Kb | TXT | spicemodels_diodes_standard-rectifiers.txt |
| *SRC=1N5711W 1N5711W 1N5711W 1N5711W;DI_1N5711W 1N5711W 1N5711W 1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W 1N5711W 1N5711W 1N5711W D ;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 BAS40 BAS40 BAS40 D ( IS=6.12u RS=0 Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BAT54 BAT54 BAT54 BAT54;DI_BAT54 BAT54 BAT54 BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT54 BAT54 BAT54 BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54A BAT54A BAT54A BAT54A;DI_BAT54A BAT54A BAT54A BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc www.datasheetarchive.com/files/diodes-inc/spice-model/all.txt |
Diodes, Inc. | 23/10/2012 | 1445.73 Kb | TXT | all.txt |
| *SRC=1N5711W 1N5711W 1N5711W 1N5711W;DI_1N5711W 1N5711W 1N5711W 1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W 1N5711W 1N5711W 1N5711W D _BAT54 BAT54 BAT54 BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT54 BAT54 BAT54 BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54A BAT54A BAT54A BAT54A;DI_BAT54A BAT54A BAT54A BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A BAT54A BAT54A BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54C BAT54C BAT54C BAT54C;DI_BAT54C BAT54C BAT54C BAT54C;Diodes www.datasheetarchive.com/files/diodes-inc/spice-model/spicemodels_all.txt |
Diodes, Inc. | 04/09/2012 | 1443.84 Kb | TXT | spicemodels_all.txt |
| * *Zetex ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06G 30 40 50 *-connections-D-G-S M1 6 2 5 5 Nmod L=1.16E-6 16E-6 16E-6 16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 75E-12 75E-12 75E-12 C2 3 4 5E-12 5E-12 5E-12 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06G www.datasheetarchive.com/files/diodes-inc/spice-model/1373.mod |
Diodes, Inc. | 04/09/2012 | 1.39 Kb | MOD | 1373.mod |
| * *Zetex ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06K 30 40 50 *-connections-D-G-S M1 6 2 5 5 Nmod L=1.16E-6 16E-6 16E-6 16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 75E-12 75E-12 75E-12 C2 3 4 5E-12 5E-12 5E-12 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06K www.datasheetarchive.com/files/diodes-inc/spice-model/1374.mod |
Diodes, Inc. | 04/09/2012 | 1.39 Kb | MOD | 1374.mod |
| XA06Q1 XA06Q1 XA06Q1 XA06Q1 DIEOUT DIEIN Q1E A06Q1 XA06Q2 XA06Q2 XA06Q2 XA06Q2 DIEOUT Q1E Q2E A06Q2 .ENDS * Q1 distributed base model .SUBCKT A06Q1 Q1C Q1B Q1E RB1 Q1B 11 .095 RB2 11 12 3 609 DCD3 12 C1 DMOD 386 .ENDS * Q2 distributed base model .SUBCKT A06Q2 Q2C Q DMOD 386 .ENDS * DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/mmics/mmics_msa/msa0686.lib |
Spice Models | 29/07/2012 | 2.43 Kb | LIB | msa0686.lib |
| Q1E A06Q1 XA06Q2 XA06Q2 XA06Q2 XA06Q2 DIEOUT Q1E Q2E A06Q2 .ENDS * Q1 distributed base model .SUBCKT A06Q1 Q1C Q1B Q1E RB1 Q1B 11 .095 RB2 11 12 3.26 RB3 12 12 C1 DMOD 386 .ENDS * Q2 distributed base model .SUBCKT A06Q2 Q2C Q2B Q2E 386 .ENDS * DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES .MODEL www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/mmics/mmics_msa/msa0611.lib |
Spice Models | 29/07/2012 | 2.42 Kb | LIB | msa0611.lib |
| XA06Q1 XA06Q1 XA06Q1 XA06Q1 DIEOUT DIEIN Q1E A06Q1 XA06Q2 XA06Q2 XA06Q2 XA06Q2 DIEOUT Q1E Q2E A06Q2 .ENDS * Q1 distributed base model .SUBCKT A06Q1 Q1C Q1B Q1E RB1 Q1B 11 .095 RB2 11 12 3 609 DCD3 12 C1 DMOD 386 .ENDS * Q2 distributed base model .SUBCKT A06Q2 Q2C Q DMOD 386 .ENDS * DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/mmics/mmics_msa/msa0685.lib |
Spice Models | 29/07/2012 | 2.43 Kb | LIB | msa0685.lib |
| XA06Q1 XA06Q1 XA06Q1 XA06Q1 DIEOUT DIEIN Q1E A06Q1 XA06Q2 XA06Q2 XA06Q2 XA06Q2 DIEOUT Q1E Q2E A06Q2 .ENDS * Q1 distributed base model .SUBCKT A06Q1 Q1C Q1B Q1E RB1 Q1B 11 .095 RB2 11 12 3 609 DCD3 12 C1 DMOD 386 .ENDS * Q2 distributed base model .SUBCKT A06Q2 Q2C Q DMOD 386 .ENDS * DIODE AND TRANSISTOR MODELS USED IN AGILENT TECHNOLOGIES MMICS AND DISCRETES www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/mmics/mmics_msa/msa0635.lib |
Spice Models | 29/07/2012 | 2.43 Kb | LIB | msa0635.lib |