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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
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transistor T1J

Catalog Datasheet MFG & Type PDF Document Tags

transistor T1J

Abstract: T1J marking PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion , capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1J , T1J 4 1 2.0 ± 0.1 2 0.65 0.59 ± 0.05 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter
NEC
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transistor T1J T1J marking NESG2101M05-T1 PU10190EJ01V0DS

transistor T1J

Abstract: T1J marking Philips Semiconductors Product specification NPN switching transistor FEATURES · Low current , portable and consumer equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package. MARKING TYPE NUMBER PMST2369 MARKING CODE t1J PINNING PIN 1 2 3 base emitter collector PMST2369 , switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL ^th j-a Note
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OCR Scan

transistor T1J

Abstract: NESG2101M05-A NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP , 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1J 130 to 260 2 Data Sheet
California Eastern Laboratories
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NESG2101M05-A M05 MARKING transistor T1J 4pin NESG2101M05-T1-A PU10190EJ02V0DS

transistor T1J

Abstract: NESG2101M05-T1 NPN RF NPN Silicon Germanium RF Transistor NESG2101M05 NPN SiGe RF 125 mW 4 M05 PO , ­ dB 1. PW 350 µsDuty Cycle 2% 2. 3. MSG = S21 S12 hFE T1J hFE 2 , 4 M05mm 2.05±0.1 2 0.11+0.1 ­0.05 1 4 0.30+0.1 ­0.05 T1J 0.65 0.65 1.30
NEC
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RF transistor PU10190JJ02V0DS L044-435-1588 X044-435-1579 X044-435-1918

transistor T1J

Abstract: NESG2101M05-T1 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4
NEC
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IC802

Abstract: RTL 602 W %61#+%!)*%!"#.-!V5U7 ED8 5*%+$!&,?):#(%!&%).-/7 X%61#+%!)*%!B6%#$%(&7 EDP Z,%&!,6%(#).,-!(%)'(-!), -,(T#1J EDE X , ,-!(%)'(-!), 9O -,(T#1J >D8 5*%+$!+,-?./'(#).,-7 D H"#IJKL3-D$M#$.-2/34.4 /). 8 4FEB?)E ^%W!),6 , )%3J ID8 X%61#+%!)*%!$%W0,#(37 , DIODE DIODE DIODE TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR 2 5 1 1 4 1 2 5 6 5 4 2 17-3 Q213 247 LD1 IC222 IC221 IC9 IC203 IC206 IC28
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VC175 IC802 RTL 602 W K40 fet IC-221 DFJP050ZA002 I/08/4 65134B 086C3 9E73B 518D9 I5134

transistor T1J

Abstract: 2N3904 the absolute value of the transistor's base emitter voltage so that no calibration is required. The , temperature sensor. Figure 13 shows the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked to the base. To prevent ground noise , transistor, operated at constant current. Unfortunately, this technique requires calibration to null out the
ON Semiconductor
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ADM1032 2N3904 2N3906 ADM10321 2N3904/06

ADM1032ARMZ T1J

Abstract: ADM1032ARMZ-1 ), accurate to 1°C. A novel measurement technique cancels out the absolute value of the transistor's base , sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not , the base-emitter voltage of a transistor, operated at constant current. Unfortunately, this , sensor is performed in a similar manner. VDD N×I IBIAS D+ REMOTE SENSING TRANSISTOR VOUT
Analog Devices
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ADM1032ARMZ T1J ADM1032ARMZ-1 ADM1032ARMZ-2REEL MO-187-AA MS-012-AA ADM1032ARMZ-REEL7 C01906-0-11/05

nesg2101m05-t1-a

Abstract: NESG2101M05-A A Business Partner of Renesas Electronics Corporation. NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES · · · · The device is an ideal choice for medium output , 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 , (Bottom View) (1.05) (0.65) T1J 4 1 2.0±0.1 0.65 0.30+0.1 ­0.05 1.30 0.5 PIN
Renesas Technology
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transistor T1J

Abstract: NESG2101M05-T1 . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM , when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking T1J hFE , T1J 0.65 0.65 1.30 0.59±0.05 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4
NEC
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NEC NESG2101M05 MICROWAVE TRANSISTOR

IH33

Abstract: gsm 900 amplifier fechnoiogies Infineon CGY 98 GSM/PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1 .2. Each one uses a BFP 420 SIEGET® transistor for first-stage amplification, and the CGY 98 GaAs MMIC for the final two stages. The amplifier chains can be , ' Delta 1[T1J RefLvI -43.51 dB 36.8 dBm 1.74299198 GHz 40 36.8 cBOffset 30 ri RßW 1 0 MH2 RFAtl 10 dB
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OCR Scan
IH33 gsm 900 amplifier 1AP 164 d 317 transistor LQG21N D-85375 LL1005
Abstract: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES · The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise , hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun , ) 2.05±0.1 1.25±0.1 (1.05) 3 2 (Bottom View) (0.65) T1J 4 1 2.0±0.1 0.65 0.30+0.1 ­0.05 Renesas Electronics
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Abstract: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES â'¢ The device is an ideal choice for medium output power, high-gain amplification and low distortion, low , T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL , 2 1 4 0.30+0.1 â'"0.05 T1J (0.65) 0.65 1.30 3 (1.05) 2.0±0.1 0.11+0.1 Renesas Electronics
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marking A4t sot23

Abstract: A1t SOT23 NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 , LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2 T1J 4 1 0.65 1.30 2.0 ±0.1
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: PH C5V1 NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , ) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 2 T1J 3 2.0
Philips Semiconductors
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T2D 79 diode C18 ph diode T2D DIODE A4T SOT23 1n4148 sot23 A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

transistor T1J

Abstract: bjt npn NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better , MINIMOLD 2.05±0.1 1.25±0.1 3 T1J 2 2.0 ±0.1 4 0.65 1.30 0.65 1 +0.1
California Eastern Laboratories
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bjt npn NEC 9319

transistor gl 1117

Abstract: NEC NESG2101M05 absolute value of the transistor's base emitter voltage so that no calibration is required. The ADM1032 , transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded and should be linked , negative temperature coefficient of a diode, or the base-emitter voltage of a transistor, operated at , SENSING TRANSISTOR C1* D- BIAS DIODE VOUT+ To ADC VOUT- LOW-PASS FILTER fC = 65 kHz * CAPACITOR C1
California Eastern Laboratories
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transistor gl 1117 1GP20 IC 7408 re 10019 S21E

BF 3027

Abstract: transistor T1J absolute value of the transistor's base emitter voltage so that no calibration is required. The ADM1032 , base-emitter voltage of a transistor, operated at constant current. Unfortunately, this technique requires , the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the , + REMOTE SENSING TRANSISTOR C1 D­ BIAS DIODE LOW-PASS FILTER fC = 65kHz VOUT+ TO ADC VOUT­ CAPACITOR
California Eastern Laboratories
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BF 3027 13444 GA1060 nec 2562 14851 mje 2055
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