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    BGD802,112 Search Results

    BGD802,112 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BGD802,112 NXP Semiconductors BGD802 - RF/Microwave Amplifier, 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN Original PDF
    BGD802,112 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier - Composite second order distortion (CSO): -56 dB; Composite triple beat (CTB): -54 dB; Description: 870 MHz, 18.5 dB gain Power Doubler ; Frequency range: 40 - 870 Hz; Gain: 18.5 dB; Return loss (input/output): 20/20 dB; Total current consumption (Itot): 410 mA; Package: SOT115J; Container: Bulk Pack Original PDF
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    BGD802,112 Price and Stock

    NXP Semiconductors BGD802,112

    IC AMP CATV SOT115J
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