NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AP950 AP950 501 950nm Multi-Mode VCSEL Array 250 um 90 um Preliminary datasheet - not released for production 120 um 125 um 15 um wiring width 175 um Features · 8x8 VCSEL ARRAY · 950nm WAVELENGTH RANGE · HIGH WAVELENGTH UNIFORMITY · SYMMETRIC EMISSION PROFILE · Ordering information Part Number AP950 AP950 5018x8 Description 950nm multimode array 8x8 1750 um 2430 um AP950 AP950 501 Electro-optical characteristics Parameter Symbol Conditions 950nm ... | Original |
2 pages, |
avalon-photonics vcsel array Avalon Photonics 8x8 VCSEL array AP950 AP950 abstract |
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| Abstract: mm2 * The illumination source is a GaAs LED emitting at 950nm. _ Rev A MICRO ELECTRONICS LTD. 38 , Junction Capacitance Cj 25 40 PF VR=3V Ee=0 f^iMHz Open Circuit Voltage Voc 350 mV Ee=lmW/cm2 l=950nm VR=5V Light Current IL 25 45 ^A Ee=ImW/cm2 X=950nm VR=5V Turn-On Time Ton 50 nS VR=iOV RL=lKO ... | OCR Scan |
1 pages, |
ML308 ML308 abstract |
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| Abstract: SI Spectral Sensitivity 0.57 A/W X=950nm Open-Circut Voltage 327 mV E=0.5mWicm!, X=950nm Vo 248 E=0.5mW/cm'. X=950nm Is Short-Circuit Current 2 kA Ton Turn-On Time 50 nS RL=tk , Area 7.7 mm1 Ir Dark Current 2 30 nA X=950nm Ct TotaLCapacitance 25 30 PF Vr=3V, F= tMHz. E=0 ... | OCR Scan |
1 pages, |
PD638B 438B 0Q00DS3 PD-438B/PD-638B PD438B PD-438B 0Q00DS3 abstract |
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| Abstract: Symbol V(BR)CEO VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee=1mW/cm2, l=950nm, IC=0.1mA VS=5V , , l=950nm, VCE=5V Ee=1mW/cm2, l=950nm, VCE=5V Ee=1mW/cm2, l=950nm, VCE=5V Symbol Ica Min 0.8 , Current 80 100 10 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 , Temperature ( °C ) 94 8239 VCE=5V l=950nm 0.1 1 10 Ee Irradiance ( mW / cm2 ) 94 8271 , Irradiance 10 10 BPW 85 A l=950nm Ee=1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.1 ... | Original |
5 pages, |
BPW85C BPW85B BPW85A BPW85 datasheet abstract |
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| Abstract: Typ Max Unit BPW14NA BPW14NA Ee=lmW/cm2, ^950nm, VCE=5V lea 0.7 1.0 1.4 mA Collector Light Current BPW14NB BPW14NB Ee= 1 mW/cm2, X=950nm, VCE=5V Ica 1.0 1.5 2.0 mA BPW14NC BPW14NC Ee=lmW/cm2, X^950nm, VCE=5V Ica 1.7 3.0 mA , HPW14NA HPW14NA II 1 1 VCE=5V U A=950nm 0.01 0.1 1 10 ) Ee - Irradiance ( mW/cm2 ) Figure 4 : Collector Light Current vs. Irradiance X=950nm ... | OCR Scan |
4 pages, |
Telefunken Phototransistor BPW14NB BPW14N BPW14NC BPW14NA BPW14 BPW14N abstract |
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| Abstract: VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee=1mW/cm2, l=950nm, VCE=5V ICEO CCEO Ica Min , , l=950nm, IC=0.1mA VS=5V, IC=1mA, l=950nm, RL=1kW VS=5V, IC=1mA, l=950nm, RL=100W VS=5V, IC=2mA , Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 0.1 VCE=5V l=950nm 1 100 10 8 VCE=5V RL=100W l=950nm 6 4 toff 2 ton Ee=1 mW/cm2 l ) rel , Sensitivity l=950nm 1 0 94 8293 10 Ica Collector Light Current ( mA ) 1 VCE Collector ... | Original |
6 pages, |
TSMS3700 TEMT3700 8239 TEMT3700 abstract |
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| Abstract: 70 180 kHz ICEO CCEO lp l0.5 Ee=1mW/cm2, l=950nm, IC=0.1mA VS=5V, IC=1mA, l=950nm, RL=1kW VS=5V, IC=1mA, l=950nm, RL=100W VS=5V, IC=2mA, RL=100W 0.3 Type Dedicated Characteristics Tamb = 25_C Parameter Collector Light Current g Test Conditions Ee=1mW/cm2, l=950nm , Collector Current 2.0 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 0.1 VCE=5V l=950nm 0.1 1 100 10 8 VCE=5V RL=100W l=950nm 6 4 ... | Original |
6 pages, |
TEMT3700 8239 TEMT370 TEMT370 abstract |
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| Abstract: 0 VCE = 5 V, f = 1 MHz, E=0 Ee=1mW/cm2, l=950nm, VCE=5V Ee=1mW/cm2, l=950nm, IC=0.1mA VS=5V, IC=1mA, l=950nm, RL=1kW VS=5V, IC=1mA, l=950nm, RL=100W VS=5V, IC=2mA, RL=100W Symbol V(BR)CEO , VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 TEMT 3704 1 0.1 l=950nm Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 1 10 100 VCE Collector , Current vs. Ambient Temperature 1 VCE=5V l=950nm 0.01 0.001 0.01 100 Tamb Ambient ... | Original |
5 pages, |
TEMT4700 datasheet abstract |
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| Abstract: , E = 0 VCE = 5 V, f = 1 MHz, E=0 Min 70 Typ lp l0.5 Ee=1mW/cm2, l=950nm, IC=0.1mA , Current g Test Conditions Ee=1mW/cm2, l=950nm, VCE=5V Type BPW85A BPW85A BPW85B BPW85B BPW85C BPW85C Symbol Ica , TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW85 BPW85 10 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 BPW , 1.2 1.0 0.8 0.6 0.5 mW/cm2 1 20 40 60 80 0.1 mW/cm2 0.05 mW/cm2 0.1 l=950nm , l=950nm 0.1 Ee Irradiance ( 94 8271 mW / cm2 ) 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.01 ... | Original |
6 pages, |
ic 8275 BPW85C BPW85B BPW85 bpw 50 8239 BPW85A bpw 104 BPW85 abstract |
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| Abstract: Ee=1mW/cm2, l=950nm, IC=0.1mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W , Conditions Ee=1mW/cm2, l=950nm, VCE=5V Ee=1mW/cm2, l=950nm, VCE=5V Ee=1mW/cm2, l=950nm, VCE=5V , l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 1 BPW 96 A 0.1 VCE=5V l=950nm , /cm2 0.05 mW/cm2 l=950nm 0.1 0.1 1 10 100 VCE Collector Emitter Voltage ( V , / Turn off Time ( m s ) BPW 96 VCE=5V RL=100W l=950nm 6 4 toff 2 ton 1.0 0.8 0.6 ... | Original |
4 pages, |
BPW96C BPW96B BPW96A BPW96 bpw 104 datasheet abstract |
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| Abstract: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC (EN DIN) 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be assessed according IEC 60825-1. All other LEDs for lighting, illumination, light barriers, and so on are moved to the eye safety standard for artificial non coherent sources IEC 62471 (identica ... | Original |
3 pages, |
TSAL7200 940 nm CQY36N CQY37N diode sr 60 IEC 60825-1 TSAL6400 TSAL4400 TSAL5100 TSAL5300 TSAL6200 TSAL6100 diode SR 360 datasheet 60825-1 datasheet abstract |
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| Abstract: LED950-66-16100 LED950-66-16100 TECHNICAL DATA SUPER HIGH POWER INFRARED LED Structure: 16 power LED chips, 4 x 4 parallel array Peak Wavelength: typ. 950 nm Optical Output Power: typ. 750 mW cw @ 2.0 A Package: TO-66 with silicone + epoxy resin 1 = anode 2 = cathode Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Power dissipation PD DC forward current *) IF Pulse forward current *) IFP Reverse voltage VR Operating lifetime T Operating case temperature TOP Storage te ... | Original |
1 pages, |
LED950-66-16100 ir led 940 nm 1 w "infrared led" 800 nm LED950-66-16100 abstract |
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| Abstract: is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (lp=950nm). 94 8390 , mW/cm2, l = 950 nm, VR = 5 V VR = 5 V, l = 950 nm l = 950 nm VR=20V, l=950nm VR=20V, l=950nm , 1 VR=5V l=950nm 0.1 0.01 100 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 l=950nm 0.02 mW/cm2 1 0.1 10 1 Ee Irradiance ( mW / cm2 ) 94 8442 80 , vs. Ambient Temperature 94 8439 VR=5V l=950nm 1.2 94 8444 850 950 1050 1150 ... | Original |
4 pages, |
BPV10F datasheet abstract |
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| Abstract: , X=950nm NEP 4xl0"14 W/VHz Detectivity VR=10V, X=950nm D* 6xl012 cmVHz / W Rise Time VR=10V, RL=lkQ , , X=870nm fc 4 MHz Vr=12V, RL=lkii X=950nm fc 1 MHz 1000 U a Q Ch ara icte rist ics (T unb = 2 , 10 0.1 VR=5V X=950nm 0.01 0.1 1 94 8404 Ee ~ Irradiance ( mW/cm2 ) Figure 3. Reverse Light ... | OCR Scan |
4 pages, |
itt 84-10 BPV20NFL BPV20NFL abstract |
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| Abstract: nm VR = 5 V, l = 950 nm l = 950 nm VR=10V, l=950nm VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm VR=12V, RL=1kW, l=870nm VR=12V, RL=1kW, l=950nm Symbol VF V(BR) Iro CD , VR=5V l=950nm 1.2 E=0 f=1MHz CD Diode Capacitance ( pF ) I ra rel Relative Reverse , Spectral Sensitivity 100 10 0.1 0.01 VR=5V l=950nm 0.1 Ee Irradiance ( mW / cm2 , 8411 0.5 mW/cm2 l=950nm 94 8408 850 950 1050 1150 l Wavelength ( nm ... | Original |
5 pages, |
BPV22F 8633 BPV22F abstract |
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| Abstract: , spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p=950nm). Lens radius and chip position are , 1 lp %/K 0.35 0.6 ±65 950 s(l) s(l) l = 950 nm VR=10V, l=950nm VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm VR=12V, RL=1kW, l=870nm VR=12V, RL=1kW, l=950nm Unit V V nA pF nm % W/ Hz cmHz/W ns ns MHz MHz Typical Characteristics (Tamb = , Ambient Temperature ( °C ) Figure 1. Reverse Dark Current vs. Ambient Temperature 2 (5) l=950nm ... | Original |
5 pages, |
BPV20F BPV20F abstract |
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| Abstract: 70 4 1 s(l) s(l) l = 950 nm VR=10V, l=950nm VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm VR=12V, RL=1kW, l=870nm VR=12V, RL=1kW, l=950nm Unit V V nA pF A/W A , ( °C ) Figure 1. Reverse Dark Current vs. Ambient Temperature 2 (5) l=950nm 1.0 1 94 , ) 1000 100 10 1 VR=5V l=950nm 0.1 0.01 0.1 Ee Irradiance ( 94 8421 mW / cm2 , l=950nm S rel Relative Sensitivity 1 mW/cm2 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 ... | Original |
5 pages, |
BPV21F BPV21F abstract |
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| Abstract: , l = 870 nm VR = 5 V, l = 950 nm l = 950 nm VR=10V, l=950nm VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm VR=12V, RL=1kW, l=870nm VR=12V, RL=1kW, l=950nm Symbol VF V(BR , VR=10V 0.5 mW/cm2 l=950nm 20 0.05 mW/cm2 0.02 mW/cm2 40 60 100 80 Tamb , 94 8403 VR=5V l=950nm 1.2 1.0 0.8 E=0 f=1MHz 60 40 20 0.6 0 0 20 , Relative Spectral Sensitivity 100 10 0.1 0.01 VR=5V l=950nm 0.1 Ee Irradiance ( mW ... | Original |
5 pages, |
BPV23F BPV23F abstract |
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| Abstract: VR=10V, l=950nm VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm VR=12V, RL=1kW, l=870nm VR=12V, RL=1kW, l=950nm Symbol VF V(BR) Iro CD RS Vo TKVo Ik Ira Min Typ 1 , ) Ira Reverse Light Current ( m A ) 10 1 VR=5V l=950nm 0.1 0.01 1 80 100 l=950nm 1 mW/cm2 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 10 0.1 E=0 f=1MHz , l=950nm 1.2 94 8408 850 950 1050 1150 l Wavelength ( nm ) Figure 6 : Relative ... | Original |
5 pages, |
BPV21F datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Silicon Phototransistor IR-GaAs diode (950nm) >0.7 mA through hole 17 us 13 us slotted No SFH 9303 Silicon Phototransistor IR-GaAs diode (950nm) >0.7 mA through hole 17 us 13 us slotted No SFH 9304 Silicon Phototransistor IR-GaAs diode (950nm) >0.7 mA through hole 17 us 13 us slotted No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~708.htm |
Infineon | 19/10/2000 | 13.17 Kb | HTM | para~708.htm |
| Microsoft Excel 5.0-Tabelle Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) headline High Power - GaAlAs/GaAs (950 nm) Part High Power - GaAlAs/GaAs (950 nm) High Power - Ga headline Standard - GaAs (950 nm) Part Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) Standard - GaAs (950 nm) High Power - Ga www.datasheetarchive.com/download/23188573-850016ZC/oiremit.xls |
Temic | 06/03/1997 | 28.5 Kb | XLS | oiremit.xls |
| SIEMENS Fiber Optics - Plastic Fiber Optic Transmitter Diodes SFH 450 (950nm), SFH 750 (660nm), SFH 756 (660nm) Features 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling Plastic Connector Housing Applications Datasheets: SFH 450 (950nm) 320K SFH 750 (660nm) 288K SFH 756 (660nm) 288 www.datasheetarchive.com/files/siemens/products/37/3771.htm |
Siemens | 28/02/1998 | 6.51 Kb | HTM | 3771.htm |
| Detector Emitter I CE Package t f t r Typus Obsolete SFH 9340 Schmitt-Trigger IC IR-GaAs diode (950nm) - through hole 0.01 us 0.02 us slotted No SFH 9341 Schmitt-Trigger IC IR-GaAs diode (950nm) - through www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~710.htm |
Infineon | 19/10/2000 | 12.38 Kb | HTM | para~710.htm |
| SIEMENS Fiber Optics - Plastic Fiber Optic Transmitter Diodes SFH 450 (950nm), SFH 750 (660nm), SFH 756 (660nm) Features 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling Plastic Connector Housing Applications SFH 450 (950nm) 320K SFH 750 (660nm) 288K SFH 756 (660nm) 288K www.datasheetarchive.com/files/infineon/products/37/3771.htm |
Infineon | 26/11/1998 | 6.46 Kb | HTM | 3771.htm |
| (950nm) >0.7 mA through hole 17 us 13 us slotted No SFH 9306 Silicon Phototransistor IR-GaAs diode (950nm) >0.7 mA through hole 17 us 13 us slotted No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~709.htm |
Infineon | 19/10/2000 | 12.38 Kb | HTM | para~709.htm |
| SFH 400 6 Grad 20 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No SFH 400-3 6 Grad 32 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No SFH 401 15 Grad 10 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No SFH 401-3 15 Grad 16 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No SFH 402 40 Grad 2.5 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No SFH 402-3 40 Grad 2.5 mW/sr - P-TO-18 P-TO-18 P-TO-18 P-TO-18 metal - 1000 ns 1000 ns 950 nm - No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~704.htm |
Infineon | 19/10/2000 | 16.56 Kb | HTM | para~704.htm |
| ( Miniature Plastic Package SMT 880 nm Emitters 950 nm Emitters 20 Grad 6.3 mW/sr - 3mm plastic (T1) - 500 ns 500 ns 950 nm - No SFH 409-1 20 Grad 6.3 mW/sr - 3mm plastic (T1) - 500 ns 500 ns 950 nm - No SFH 409-2 20 Grad 10 mW/sr - 3mm plastic (T1) - 500 ns 500 ns 950 nm - No SFH 409-3 20 Grad 16 mW/sr - 3mm plastic (T1) - 500 ns 500 ns 950 nm - No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~763.htm |
Infineon | 19/10/2000 | 14.92 Kb | HTM | para~763.htm |
| ( Miniature Plastic Package SMT 880 nm Emitters 950 nm Emitters 25 Grad 10 mW/sr - 5mm plastic (T1 3/4) - 1000 ns 1000 ns 950 nm - No LD 271H 25 Grad 16 mW/sr - 5mm plastic (T1 3/4) - 1000 ns 1000 ns 950 nm - No LD 271HL 271HL 271HL 271HL 25 Grad 16 mW/sr - 5mm plastic (T1 3/4) - 1000 ns 1000 ns 950 nm - No LD 271L 25 Grad 10 mW/sr - 5mm plastic (T1 3/4) - 1000 ns 1000 ns 950 nm - No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~761.htm |
Infineon | 19/10/2000 | 14.93 Kb | HTM | para~761.htm |
| Infineon Technologies AG - Products - 950 nm Emitters Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support ( Miniature Plastic Package SMT 880 nm Emitters 950 nm Emitters www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/prod~693.htm |
Infineon | 26/10/2000 | 19.07 Kb | HTM | prod~693.htm |