NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| 947-T4Y-2D-002-130E | Honeywell Sensing and Control | Series 940-F/947, 3000 mm [118.0 in] scan distance, Plastic M30, Prewired 2 m, switching output NPN, adjustment potentiometer | 
|
|
|
| 947-T4V-2D-002-130E | Honeywell Sensing and Control | Series 940-F/947, 3000 mm [118.0 in] scan distance, Plastic M30, Connector M12, switching output NPN, adjustment potentiometer |
|
|
|
| 947-T4Y-2D-001-130E | Honeywell Sensing and Control | Series 940-F/947, 3000 mm [118.0 in] scan distance, Plastic M30, Prewired 2 m, switching output PNP, adjustment potentiometer |
|
|
|
| 947-T4V-2D-001-130E | Honeywell Sensing and Control | Series 940-F/947, 3000 mm [118.0 in] scan distance, Plastic M30, Connector M12, switching output PNP, adjustment potentiometer |
|
|
|
| 940-F4X-2D-001-180E | Honeywell Sensing and Control | Series 940-F/947, 1500 mm [59.0 in] scan distance, Plastic M18, Connector M12, switching output PNP, adjustment potentiometer |
|
|
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BDP 947, BDP 949 Silicon NPN Transistor For AF driver and output stages 4 High collector , BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 Collector-emitter , /W 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-22-1999 BDP 947 , (BR)CEO BDP 947 45 - - BDP 949 60 - - BDP 947 45 - - BDP 949 ... | Original |
4 pages, |
VPS05163 transistor a 949 947 transistor datasheet abstract |
|
|||
| Abstract: IÌIhl»1rMHy SUSTAINED PRODUCTS M-947 DTMF Receiver The Teltone® M-947 combines , No prefiltering of the DTMF signal is required. The M-947 is contained in a 22-pin DIP, operates from , reference. The SIGNAL IN input to the M-947 is typically connected to a Touch-Tone® telephone, radio receiver, tape player, or other DTMF signal source. The M-947 filters out dial tone and noise, splits the , are ignored. The CLEAR input resets all M-947 functions, while the BD and DV outputs provide ... | OCR Scan |
5 pages, |
M-947 IM6402 DTMF decoder a 4514 v TELTONE bd 743 transistor 947 transistor teltone m-947 bo 947 M-947 abstract |
|
|||
| Abstract: BMXDDO3202K compatibilty to Sink logic BMXDDI3202K BMXDDI3202K BMXDDI6402K BMXDDI6402K DC Transistors DC Transistor DC Transistor To be done IEC 947 5 2 standard Type of discrete input and I/O modules BMXDDI1602 BMXDDI1602 ... | Original |
1 pages, |
Square D by Schneider Electric BMXDAO1605 BMXDDI6402 BMXDDO6402 M340 BMXDDO3202 BMXDDO1612 BMXFTB2020 isolated AC voltage sensor BMXDAI1604 BMXDRA0805 BMXDDO1602 bmxdra1605 datasheet abstract |
|
|||
| Abstract: AVF1000 AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 · Internal Input/Output Matching Networks · PG = 6.0 dB at 1000W/1090 MHz · OmnigoldTM Metalization System 4X.060 R F .050 , inches / mm A .373 / 9.47 .385 / 9.78 IC 65 A VCES 55 V B C .120 / 3.25 ... | Original |
1 pages, |
c 1685 AVF1000 transistor 1334 AVF1000 abstract |
|
|||
| Abstract: SD1476 SD1476 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1476 SD1476 is a planar transistor using diffused emitter ballasted resistors for high linearity Class AB operation in VHF and band 1 television transmitters and transposers. PACKAGE STYLE .450 BAL FLG(B) A B .120 x 45° FEATURES: FULL R C E D · Common Emitter · PG = 12 dB at 240 W/88 MHz · OmnigoldTM Metalization System , MAXIMUM DIM MINIMUM inches / mm inches / mm A .373 / 9.47 .385 / 9.78 VCBO 70 V ... | Original |
1 pages, |
AN-4609 SD1476 SD1476 abstract |
|
|||
| Abstract: OPTOELECTRONICS REFLECTIVE OBJECT SENSOR QRC1133 QRC1133 PACKAGE DIMENSIONS DESCRIPTION .420(10.67) - SHRINK TUBING OVER SOLDER J .703 (17.86) .373 (9.47) GöÃ- m .150 (3.81) NOM POINT OF OPTIMUM RESPONSE The QRC1133 QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by , . .100 mW(1) OUTPUT TRANSISTOR Collector-Emitter Voltage , 100 /¿A VR = 2.0 V OUTPUT TRANSISTOR Emitter-Collector Breakdown BVceo 5 _ V lE = 100 /uA ... | OCR Scan |
2 pages, |
st178 silicon diode temperature sensor QRC1133 QRC1133 abstract |
|
|||
| Abstract: protection. I _ (17.86) f .373 (9.47) I â-¡ â-¡ -.903 (22.94)- - .603 (15.32) » .210 (5.33 , .50 mA .5.0 Volts .100 m W , - 100 /xA V„ = 2.0 V OUTPUT TRANSISTOR Emitter-Collector Breakdown bveco 5 v lE = 100/iA, Ee = 0 ... | OCR Scan |
2 pages, |
qrb1114 QRB1113 D transistor sEC transistor bI 240 QRB1113/1114 QRB1113/1114 abstract |
|
|||
| Abstract: OPTOELECTRONICS REFLECTIVE OBJECT SENSORS QRB1133/1134 QRB1133/1134 PACKAGE DIMENSIONS DESCRIPTION .420 (10.67)- (A) (K) SHRINK TUBING OVER SOLDER JOINT (E) (C)f _J 24.0 (609.60) MIN #26 AWG - .328 (8.33) 150 (3.81) NOM POINT OF OPTIMUM RESPONSE .703(17.86) ^ .373 (9.47) â-¡ The QRB1133/1134 QRB1133/1134 consists of , .50 mA .5.0 Volts .100 mW" OUTPUT TRANSISTOR Collector-Emitter , Leakage Current Ir - 100 /nA VR = 2.0 V output transistor Emitter-Collector Breakdown bveco 5 _ V lE = ... | OCR Scan |
2 pages, |
QRB1133 QRB1134 QRB1133/1134 QRB1133/1134 abstract |
|
|||
| Abstract: OPTOELECTRONICS REFLECTIVE OBJECT SENSORS QRC1113 QRC1113 PACKAGE DIMENSIONS DESCRIPTION .420 (10.67) - .226 (5.74) A .150 (3.81) MIN - .328 (8.33) .150 (3.81) NOM POINT OF OPTIMUM RESPONSE .703 (17.86) "J .373 (9.47) 1_ m QQ The QRC1113 QRC1113 consists of an infrared emitting diode and an NPN silicon , .50 mA .5.0 Volts .100 mW"1 OUTPUT TRANSISTOR Collector-Emitter , fiA VR = 2.0 V OUTPUT TRANSISTOR Emitter-Collector Breakdown bveco 5 - V lE = 100mA, Ee = 0 ... | OCR Scan |
2 pages, |
QRC1113 diode 226 diode BY 226 QRC1113 abstract |
|
|||
| Abstract: e PTB 20171 25 Watts, 935�0 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , 947 4.11 -9.81 11.66 -8.47 960 Ericsson Components RF Power Products 675 Jarvis ... | Original |
2 pages, |
PTB 20171 PTB 20200 9434 datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| Datsheet status Page count File size PRF947 UHF wideband transistor 23 content Support Spice model of PRF947 Philips RF wideband transistors and MMICs for PRF947_3 Product information page PRF947; UHF wideband transistor General info Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor www.datasheetarchive.com/files/philips/pip/prf947_3-v2.html |
Philips | 06/06/2005 | 4 Kb | HTML | prf947_3-v2.html |
| count File size PRF947 UHF wideband transistor 23-jul-99 Product PRF947_3 Product information page PRF947; UHF wideband transistor General info Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog PRF947 PRF947 T/R 9340 430 80115 Standard Marking * Reel Pack, SMD SOT323 RFS www.datasheetarchive.com/files/philips/pip/prf947_3.html |
Philips | 23/04/2003 | 3.49 Kb | HTML | prf947_3.html |
| PRF947_3 PRF947 UHF wideband transistor Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for ) PRF947 UHF wideband transistor 23-Jul-99 Product Specification 16 (A) PRF947 2000 8.5 2000 10 8.5 16 50 10 50 www.datasheetarchive.com/files/philips/pip/prf947_3-v1.html |
Philips | 14/02/2002 | 9.08 Kb | HTML | prf947_3-v1.html |
| PRF947 - UHF wideband transistor Product listing for Transistor wideband NPN up to 10 GHz Products - NPN wideband cascode transistor BFG505 BFG505 BFG505 BFG505 - NPN 9 GHz wideband transistors BFG505/X BFG505/X BFG505/X BFG505/X - NPN 9 GHz wideband transistors www.datasheetarchive.com/files/philips/catalog/listing/30924-v2.html |
Philips | 01/06/2005 | 12.09 Kb | HTML | 30924-v2.html |
| .SUBCKT MRF947 100 200 300 *Motorola Transistor MRF947, 3 *Node 1,N1 *Node 2,N2 *Node 3,N3 -10 CCB 201 199 4E-14 4E-14 4E-14 4E-14 CCE 199 301 2.2E-13 2E-13 2E-13 2E-13 CBE 201 301 1.2E-13 2E-13 2E-13 2E-13 X1 199 299 399 XMRF947 .ENDS MRF947 .SUBCKT XMRF947 1 2 3 *XMRF947, 3 * CBPAD 2 1 6.5E-14 5E-14 5E-14 5E-14 CEPAD 1 3 13.0E-14 0E-14 0E-14 0E-14 Q1 1 2 3 DMRF947 .MODEL DMRF947 NPN + IS = 4.536E-16 536E-16 536E-16 536E-16 + BF = 130 + NF = 1.003 + VAF = 24 + IKF = 0.8 + ISE = 7.238E .95 .ENDS XMRF947 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/motorola/mrf947.sbc |
Kaleidoscope | 16/08/1999 | 0.92 Kb | SBC | mrf947.sbc |
| PRF947 - UHF wideband transistor Product listing for Transistor wideband NPN up to 10 GHz BFC505 BFC505 BFC505 BFC505 - NPN wideband cascode transistor BFC520 BFC520 BFC520 BFC520 - NPN wideband cascode transistor BFE505 BFE505 BFE505 BFE505 - NPN wideband differential transistor www.datasheetarchive.com/files/philips/catalog/listing/30924.html |
Philips | 25/04/2003 | 19.02 Kb | HTML | 30924.html |
| BFT25A BFT25A BFT25A BFT25A - NPN 5 GHz wideband transistor PRF947 - UHF wideband transistor PRF949 PRF949 PRF949 PRF949 Product listing BFC505 BFC505 BFC505 BFC505 - NPN wideband cascode transistor BFC520 BFC520 BFC520 BFC520 - NPN wideband cascode transistor BFE505 BFE505 BFE505 BFE505 - NPN wideband differential transistor BFE520 BFE520 BFE520 BFE520 - NPN wideband differential transistor BFG10 BFG10 BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X BFG10/X BFG10/X - NPN 2 GHz RF power transistor BFG10W/X BFG10W/X BFG10W/X BFG10W/X - UHF power transistor BFG11 BFG11 BFG11 BFG11 www.datasheetarchive.com/files/philips/catalog/listing/30924-v1.html |
Philips | 17/02/2002 | 14.55 Kb | HTML | 30924-v1.html |
| PRF947 - UHF wideband transistor PRF947_3 SOT323 1 PRF947_3 true www.datasheetarchive.com/download/92820543-612994ZC/products.zip (P:\481.Concise Catalog CD-ROMs\catalog\products\15816.txt) |
Philips | 01/06/2005 | 1234.32 Kb | ZIP | products.zip |
| BDP 947 NPN Silicon AF Power Transistor Infineon Technologies AG - Products - General Purpose AF-Transistors NPN BDP Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors Transistors AF For driver and output stages General Purpose AF-Transistors NPN BDP www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2432.htm |
Infineon | 26/10/2000 | 23.71 Kb | HTM | pro~2432.htm |
| wideband transistor PRF947 - UHF wideband transistor PRF949 PRF949 PRF949 PRF949 - UHF wideband transistor PRF957 PRF957 PRF957 PRF957 ] Sensors - [50] Thyristors (SCRs), triacs and trigger devices - [244] Transistors - [1361] Bipolar power transistors - [65] Darlington transistors - [34] General purpose transistors - [277] High voltage transistors - [62] Low noise transistors - [19] Low VCE(sat) [BISS] transistors - [32] Medium frequency transistors www.datasheetarchive.com/files/philips/catalog/219/282/27046/30928/15613/30924/index.htm |
Philips | 17/02/2002 | 130.28 Kb | HTM | index.htm |