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947 transistor

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Abstract: . Page 917 917 917 917 923 923 923 928 928 932 932 932 932 932 932 938 938 938 943 943 947 947 947 947 947 947 953 953 953 958 958 962 965 968 971 · Please refer (Small Signal Transistor (Lead Device , - - - - - - · Please refer (Small Signal Transistor (Lead Device) hand book marked , *2SJ148 2SJ148 * 2SJ167 2SJ167 2SJ168 2SJ168 2SJ305 2SJ305 · Please refer (Small Signal Transistor (Lead Device) hand book marked , 723 RN1503 RN1503 RN1504 RN1504 RN1505 RN1505 RN1506 RN1506 RN1507 RN1507 RN1508 RN1508 · Please refer [Small Signal Transistor (Lead ... OCR Scan
datasheet

7 pages,
258.05 Kb

YTS3905 transistor 2N4401 02CZ5 02CZ6 705 transistor 752 Transistor transistor 835 02CZ2 HN3C07F TBC560 02CZ27 2n4401 331 transistor 737 transistor Hand book 2N3903 2N3904 2N5551 2SC1815 2SK246 2N3903 2N3904 2SK1227 2N3903 2N3904 transistor C549 2N3903 2N3904 transistor 1201 1203 1205 2N3903 2N3904 C549 transistor 2N3903 2N3904 2N3904 331 transistor 2N3903 2N3904 2N3903 2N3903 2N3904 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N4403 2N5400 2N5401 2N5550 2N5551 2SA562TM 2SA950 2SA970 2SA1015 2SA1048 2SA1049 2SA1091 2SA1150 2SA1161 2SA1162 2SA1163 2SA1182 2SA1200 2SA1201 2SA1202 2SA1203 2SA1204 TEXT
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Abstract: BDP 947, BDP 949 Silicon NPN Transistor • For AF driver and output stages 4 • High , Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 , -22-1999 BDP 947, BDP 949 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol , V V(BR)CEO BDP 947 45 - - BDP 949 60 - - BDP 947 45 - - BDP ... Infineon Technologies
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4 pages,
91.5 Kb

TEXT
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Abstract: BDP 947, BDP 949 Silicon NPN Transistor For AF driver and output stages 4 High collector , BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 Collector-emitter , /W 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-22-1999 BDP 947 , (BR)CEO BDP 947 45 - - BDP 949 60 - - BDP 947 45 - - BDP 949 ... Infineon Technologies
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datasheet

4 pages,
93.45 Kb

VPS05163 TRANSISTOR bdp 948 transistor a 949 947 transistor TEXT
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Abstract: IÌIhl»1rMHy SUSTAINED PRODUCTS M-947 DTMF Receiver The Teltone® M-947 combines , . No prefiltering of the DTMF signal is required. The M-947 is contained in a 22-pin DIP, operates from , reference. The SIGNAL IN input to the M-947 is typically connected to a Touch-Tone® telephone, radio receiver, tape player, or other DTMF signal source. The M-947 filters out dial tone and noise, splits the , are ignored. The CLEAR input resets all M-947 functions, while the BD and DV outputs provide ... OCR Scan
datasheet

5 pages,
190.01 Kb

4049 CMOS Inverter 8 pin 12volt relay 8048 printer a 4514 v crystal oscillator 4049 DTMF decoder IM6402 M-947s dial tone TELTONE 947s bd 743 transistor M-947 M-947 M-947 947 transistor M947 bo 947 teltone m-947 TEXT
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Abstract: . All M-947 outputs interface with CMOS, standard voltage translation ICs, and transistor drivers. For , tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone® M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency (DTMF) signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is , -MHz television crystal for frequency reference. The SIGNAL IN input to the M-947 is typically connected to a ... OCR Scan
datasheet

5 pages,
141.93 Kb

TEXT
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Abstract: ERICSSON $ PTB 20183 30 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor (P re lim ina ry) Description The 20183 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 935 960 MHz frequency band. It Is rated at 30 Watts minimum output power and , ) (All Phase Angles at Frequency of Test) Source and Load Impedances ^ Frequency MHz 935 947 960 , JX -8.83 -8.55 -8.33 MHz 935 947 960 JX -12.24 -11.83 -11.52 200 ... OCR Scan
datasheet

2 pages,
51.98 Kb

IC 935 20183 TEXT
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Abstract: ERICSSON ^ (Preliminary) r PT R o n i7 l I D ¿ U 1 f i 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960 MHz frequency band. It is rated at 25 Watts minimum , - - 5:1 - Source and Load .Impedances Z Source ZLoad Frequency MHz 935 947 960 R Z Source JX Frequency MHz 935 947 960 176 R Z Load JX 4.25 4.11 3.97 -10.09 ... OCR Scan
datasheet

2 pages,
50.16 Kb

transistor b 1166 IC 935 TEXT
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Abstract: INNOVATING SOLUTIONS M-947 DTMF Receiver The T eltone® M -947 com bines switched-capacitor and , prefiltering o f the DTM F signal is required. The M -947 is contained in a 22-pin DIP, operates from a single , SIG NA L IN input to the M -947 is typically connected to a Touch-Tone® telephone, radio receiver, tape player, or other DTM F signal source. The M -947 filters out dial tone and noise, splits the , signals are ignored. The CLEAR input resets all M -947 functions, while the B D and D V outputs provide ... OCR Scan
datasheet

5 pages,
351.29 Kb

8048 printer M-947 579-M TEXT
datasheet frame
Abstract: Reflective Opto Sensors Reflective Arrowhead with Dust Cover, Wires (Focused) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47) 0.703 (17.86) 0.021 (0.52) (4X) 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE 0.210 (5.33) 0.300 (7.62 , ) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47 , Input Diode IF VR PD Output Transistor VCEO VECO IC PD 50 mA 5.0 V 100 mW 30.0 V 4.5 V 20 mA 100 mW ... Fairchild Semiconductor
Original
datasheet

1 pages,
153.49 Kb

1067 transistor reflective sensor 4 pin 0703 transistor QRB1134 3 pin phototransistor 2 pin phototransistor 947 transistor phototransistor 3 pin TEXT
datasheet frame
Abstract: Reflective Opto Sensors Reflective Arrowhead with Dust Cover (Focused) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47) 0.703 (17.86) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE 0.210 (5.33) 0.300 (7.62) PIN1 , ) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47 , mA 100 mW Output Transistor VCEO VECO IC PD www.fairchildsemi.com/products/infrared 32 ... Fairchild Semiconductor
Original
datasheet

1 pages,
146.64 Kb

qrb1114 QRB1113 947 transistor TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
BDP 947  NPN Silicon AF Power Transistor for AF driver BDP 953  NPN Silicon AF Power Transistor for AF driver BDP 949  NPN Silicon AF Power Transistor for AF driver BDP 951  NPN Silicon AF Power Transistor for AF driver BDP 955  NPN Silicon AF Power Transistor for AF driver
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2432.htm
Infineon 26/10/2000 23.71 Kb HTM pro~2432.htm
! SIEMENS Small Signal Semiconductors ! BF660 BF660 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -2.5 V IC = -8 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.6939 -27.6 17.843 162.5 0.0035 0.318 11.3 0.0983 94.7 0.7899 -37.4 1.600 0.7613 136.9 0.281 9.8 0.1105 94.7 0.7823
/datasheets/files/infineon/ehdata/spar/bf660/ry2v58m0.s2p
Infineon 03/08/1997 2.38 Kb S2P ry2v58m0.s2p
! SIEMENS Small Signal Semiconductors ! BF660 BF660 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -10 V IC = -1 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 2.000 0.6897 137.0 0.237 19.6 0.0939 94.7 0.9043 -38.6 2.200 0.7025 129.8 0.204 19.5 0.7343 116.1 0.153 34.3 0.1730 94.7 0.8784 -52.7 2.800 0.7452 109.8 0.149 46.6 0.2044
/datasheets/files/infineon/ehdata/spar/bf660/ry10v1m0.s2p
Infineon 03/08/1997 2.38 Kb S2P ry10v1m0.s2p
! SIEMENS Small Signal Semiconductors ! BF660 BF660 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -20 V IC = -25 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.9046 -2.8 0.150 0.4833 -142.9 3.341 94.7 0.0103 58.1 0.9002 -3.2 0.200 0.5109 -151.9 90.8 0.8159 -51.4 3.000 0.7841 94.7 0.146 89.5 0.2388 87.2 0.7998 -55.6 ! ! SIEMENS
/datasheets/files/infineon/ehdata/spar/bf660/ry20v25m.s2p
Infineon 03/08/1997 2.38 Kb S2P ry20v25m.s2p
! SIEMENS Small Signal Semiconductors ! BFR180W BFR180W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 0.5 V IC = 0.75 mA ! Common Emitter S-Parameters: February 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 94.7 0.9961 -0.3 0.020 0.9593 -1.0 2.405 178.8 0.0042 88.3 0.9977 -0.7 0.030 0.9679 20.8 0.3493 21.9 0.5355 -85.9 5.000 0.1349 133.0 0.951 12.7 0.3650 18.9 0.5170 -94.7
/datasheets/files/siemens/ehdata/spar/bfr180w/w1v50m75.s2p
Siemens 09/08/1994 3.01 Kb S2P w1v50m75.s2p
BLF544 BLF544_CNV_2 Product information page BLF544 BLF544; UHF power MOS transistor General info N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. releasedate Datsheet status Page count File size BLF544 BLF544 UHF power MOS transistor 21-jan-98 Product Specification 16 94.7 Products and packages Typenumber North American
/datasheets/files/philips/pip/blf544_cnv_2.html
Philips 23/04/2003 2.63 Kb HTML blf544_cnv_2.html
! SIEMENS Small Signal Semiconductors ! BFP280W BFP280W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 3.5 V IC = 0.3 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 94.7 0.9981 -0.3 0.020 0.9797 -1.1 1.131 179.1 0.0030 91.6 0.9886 -0.5 0.050 0.9853 0.2287 28.1 0.8426 -48.8 2.400 0.6751 -94.7 0.945 80.3 0.2372 24.0 0.8233 -52.5 2.600
/datasheets/files/infineon/ehdata/spar/bfp280w/x23v5m30.s2p
Infineon 19/08/1996 2.78 Kb S2P x23v5m30.s2p
! SIEMENS Small Signal Semiconductors ! BFP136W BFP136W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 4 V IC = 50 mA ! Common Emitter S-Parameters: September 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 15.379 99.3 0.0255 32.9 0.4602 -139.8 0.200 0.8311 -170.5 11.608 94.7 0.0276 34.3 0.4475 5.500 0.9056 99.0 0.450 -6.5 0.2508 26.4 0.6917 147.4 6.000 0.8900 94.7 0.420 -9.0
/datasheets/files/siemens/ehdata/spar/bfp136w/x84v050m.s2p
Siemens 15/09/1994 3 Kb S2P x84v050m.s2p
! SIEMENS Small Signal Semiconductors ! BFP180W BFP180W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 10 V IC = 0.1 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.2168 50.8 0.9348 -39.1 2.400 0.8661 -41.0 0.524 94.7 0.2328 47.8 0.9280 -43.1 2.600 0.8500 -71.2 4.500 0.6011 -83.5 0.642 38.8 0.3753 14.1 0.8126 -80.7 5.000 0.5443 -94.7
/datasheets/files/infineon/ehdata/spar/bfp180w/x110vm10.s2p
Infineon 03/09/1997 2.78 Kb S2P x110vm10.s2p
! SIEMENS Small Signal Semiconductors ! BFP93A BFP93A ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 6 V IC = 10 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 101.7 0.0450 36.1 0.4444 -47.4 0.500 0.6215 -155.2 7.903 94.7 0.0478 35.6 0.3944 -48.3 103.3 1.123 6.7 0.1356 33.7 0.3270 -113.8 4.000 0.7878 94.7 0.951 -3.7 0.1487 29.8
/datasheets/files/infineon/ehdata/spar/bfp93a/ph6v010m.s2p
Infineon 14/08/1996 2.78 Kb S2P ph6v010m.s2p