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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

947 transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N3904 331 transistor

Abstract: C549 transistor . Page 917 917 917 917 923 923 923 928 928 932 932 932 932 932 932 938 938 938 943 943 947 947 947 947 947 947 953 953 953 958 958 962 965 968 971 · Please refer (Small Signal Transistor (Lead Device , - - - - - - · Please refer (Small Signal Transistor (Lead Device) hand book marked , *2SJ148 * 2SJ167 2SJ168 2SJ305 · Please refer (Small Signal Transistor (Lead Device) hand book marked , 723 RN1503 RN1504 RN1505 RN1506 RN1507 RN1508 · Please refer [Small Signal Transistor (Lead
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02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

947 transistor

Abstract: BDP 947, BDP 949 Silicon NPN Transistor â'¢ For AF driver and output stages 4 â'¢ High , Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 , -22-1999 BDP 947, BDP 949 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol , V V(BR)CEO BDP 947 45 - - BDP 949 60 - - BDP 947 45 - - BDP
Infineon Technologies
Original
947 transistor VPS05163

947 transistor

Abstract: transistor a 949 BDP 947, BDP 949 Silicon NPN Transistor For AF driver and output stages 4 High collector , BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 Collector-emitter , /W 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-22-1999 BDP 947 , (BR)CEO BDP 947 45 - - BDP 949 60 - - BDP 947 45 - - BDP 949
Infineon Technologies
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transistor a 949 TRANSISTOR bdp 948

teltone m-947

Abstract: M947 IÌIhl»1rMHy SUSTAINED PRODUCTS M-947 DTMF Receiver The Teltone® M-947 combines , . No prefiltering of the DTMF signal is required. The M-947 is contained in a 22-pin DIP, operates from , reference. The SIGNAL IN input to the M-947 is typically connected to a Touch-Tone® telephone, radio receiver, tape player, or other DTMF signal source. The M-947 filters out dial tone and noise, splits the , are ignored. The CLEAR input resets all M-947 functions, while the BD and DV outputs provide
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M-947 teltone m-947 M947 bo 947 947s dial tone 579-MH 22121-20H

bo 947

Abstract: . All M-947 outputs interface with CMOS, standard voltage translation ICs, and transistor drivers. For , tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone® M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency (DTMF) signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is , -MHz television crystal for frequency reference. The SIGNAL IN input to the M-947 is typically connected to a
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20183

Abstract: IC 935 ERICSSON $ PTB 20183 30 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor (P re lim ina ry) Description The 20183 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 935 960 MHz frequency band. It Is rated at 30 Watts minimum output power and , ) (All Phase Angles at Frequency of Test) Source and Load Impedances ^ Frequency MHz 935 947 960 , JX -8.83 -8.55 -8.33 MHz 935 947 960 JX -12.24 -11.83 -11.52 200
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20183 IC 935

transistor b 1166

Abstract: IC 935 ERICSSON ^ (Preliminary) r PT R o n i7 l I D ¿ U 1 f i 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960 MHz frequency band. It is rated at 25 Watts minimum , - - 5:1 - Source and Load .Impedances Z Source ZLoad Frequency MHz 935 947 960 R Z Source JX Frequency MHz 935 947 960 176 R Z Load JX 4.25 4.11 3.97 -10.09
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transistor b 1166

teltone m-947

Abstract: 8048 printer INNOVATING SOLUTIONS M-947 DTMF Receiver The T eltone® M -947 com bines switched-capacitor and , prefiltering o f the DTM F signal is required. The M -947 is contained in a 22-pin DIP, operates from a single , SIG NA L IN input to the M -947 is typically connected to a Touch-Tone® telephone, radio receiver, tape player, or other DTM F signal source. The M -947 filters out dial tone and noise, splits the , signals are ignored. The CLEAR input resets all M -947 functions, while the B D and D V outputs provide
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8048 printer 579-M

phototransistor 3 pin

Abstract: 947 transistor Reflective Opto Sensors Reflective Arrowhead with Dust Cover, Wires (Focused) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47) 0.703 (17.86) 0.021 (0.52) (4X) 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE 0.210 (5.33) 0.300 (7.62 , ) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47 , Input Diode IF VR PD Output Transistor VCEO VECO IC PD 50 mA 5.0 V 100 mW 30.0 V 4.5 V 20 mA 100 mW
Fairchild Semiconductor
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QRB1134 phototransistor 3 pin 2 pin phototransistor 3 pin phototransistor 0703 transistor reflective sensor 4 pin QRB1133 QRC1133

qrb1114

Abstract: 947 transistor Reflective Opto Sensors Reflective Arrowhead with Dust Cover (Focused) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47) 0.703 (17.86) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE 0.210 (5.33) 0.300 (7.62) PIN1 , ) 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 0.226 (5.74) PIN 3 PIN 4 0.373 (9.47 , mA 100 mW Output Transistor VCEO VECO IC PD www.fairchildsemi.com/products/infrared 32
Fairchild Semiconductor
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QRB1113 qrb1114 QRB1114 QRC1113

A1273

Abstract: QRB1134 iïT j v ; Ct rïlin 1 1i'iit if» 1V. T a b le Phototransistor OPB705 (9.47 , (C> (E) (K) ¡A! COLLECTOR EMITTER CATHODE ANODE 062 - (1.57) R NOM .373 (9.47) \ - , Diode Continuous Forward Current Reverse Voltage Power Dissipation Output Transistor 30.0 V 4.5 V ~ 100 , Dissipation Output Transistor Cotlector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Derate linearly at 1.67 mW/°C above 25°C for Input Diode and Output Transistor. Derate linearly at 1.33 mW/° C
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QRD1114 A1273 transistor 48 A-1273 OPB703 OPB704 OPB703W OPB704W OPB706A QRD1113

QRB1134

Abstract: QRB1114 B V ceo 1C (O N ) m in u n its (V ) m in M ax R a tin g T a b le (9.47) m , ) COLLECTOR EMITTER CATHODE ANODE .420 (10.67) .326 (8.33) - I- > -373 (9.47) 3m , Dissipation Output Transistor Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 30.0 V 4.5 , Temperature (Flow) Input Diode Continuous Forward Current Reverse Voltage Power Dissipation Output Transistor , Output Transistor Derate linearly at 1.33 mW/° C above 25° C for Input Diode and Output Transistor
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QRD1313

AVF1000

Abstract: c 1685 AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 · Internal Input/Output Matching Networks · PG = 6.0 dB at 1000W/1090 MHz · OmnigoldTM Metalization System 4X.060 R F .050 , inches / mm A .373 / 9.47 .385 / 9.78 IC 65 A VCES 55 V B C .120 / 3.25
Advanced Semiconductor
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c 1685 transistor 1334 transistor 1000W NPN 1000w 1000W TRANSISTOR

Inverter Transformer Core Design and Material Selection

Abstract: TWC-S3 . Comparing H-Hp on Uncut and Cut . 14 . FIGURES 1. Typical Driven Transistor Inverter , circuit is a driven transistor switch arrangement such as that shown in Figure 1. One important , impedance the current flowing in a switching transistor is limited only by its beta. Transformer leakage , . Figure 2 Ideal Square B-H Loop Figure 1 Typical Driven Transistor Inverter A Division of , 2.4 2.4 2.4 2.4 2.4 KHz KHz KHz KHz KHz ml 9.47 9.47 9.47 9.47 9.47 cm cm cm
Magnetics
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Inverter Transformer Core Design and Material Selection TWC-S3 supermalloy bh curve TRANSISTOR bH-16 MAGNESIL - N TRANSISTOR bH-10

SD1476

Abstract: TRANSISTOR K 135 J 50 SD1476 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1476 is a planar transistor using diffused emitter ballasted resistors for high linearity Class AB operation in VHF and band 1 television transmitters and transposers. PACKAGE STYLE .450 BAL FLG(B) A B .120 x 45° FEATURES: FULL R C E D · Common Emitter · PG = 12 dB at 240 W/88 MHz · OmnigoldTM Metalization System , MAXIMUM DIM MINIMUM inches / mm inches / mm A .373 / 9.47 .385 / 9.78 VCBO 70 V
Advanced Semiconductor
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TRANSISTOR K 135 J 50 AN-4609

BMXDDI1602

Abstract: BMXDDI3202K compatibilty to Sink logic BMXDDI3202K BMXDDI6402K DC Transistors DC Transistor DC Transistor To be done IEC 947 5 2 standard Type of discrete input and I/O modules BMXDDI1602
Telemecanique
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BMXDAI1604 BMXDAI1602 BMXDAI1603 BMXDDO1612 BMXDDO3202 BMXDDO6402 BMXFTB2000 BMXDDO1602 bmxdra1605 BMXDRA0805 BMXFTB2020 24VDC 24VAC BMXDDI1603

TIC55

Abstract: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , - Im p ed an c e Data Frequency MHz 935 947 960 R 4.25 4.11 3.97 Z Source jx -10.09 -9.81
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TIC55

bdp 11

Abstract: marking bdp BDP947, BDP949 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) 4 3 2 1 VPS05163 Type BDP947 BDP949 Maximum Ratings Parameter Marking BDP 947 BDP 949 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BDP 947 45 45 5 3 5 200 500 3 150 BDP 949 60 60 5 Unit V Collector-emitter voltage
Infineon Technologies
Original
bdp 11 marking bdp
Abstract: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , 947 960 Z Source R 4.25 4.11 3.97 Z Load jX R 11.92 11.66 11.34 ix -8.34 -8.47 -8.83 -
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tip 420 transistor

Abstract: QRC1133 OPTOELECTRONICS REFLECTIVE OBJECT SENSOR QRC1133 PACKAGE DIMENSIONS DESCRIPTION .420(10.67) â'" SHRINK TUBING OVER SOLDER J .703 (17.86) .373 (9.47) Göà m .150 (3.81) NOM POINT OF OPTIMUM RESPONSE The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor , . .100 mW(1) OUTPUT TRANSISTOR Collector-Emitter Voltage , 2.0 V OUTPUT TRANSISTOR Emitter-Collector Breakdown BVceo 5 _ V lE = 100 /uA Collector-Emitter
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tip 420 transistor Reflective Optical Sensor with Transistor Output silicon diode temperature sensor st178 ST1781
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