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947+transistor

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Abstract: - - - - - - · Please refer (Small Signal Transistor (Lead Device) hand book marked , *2SJ148 * 2SJ167 2SJ168 2SJ305 · Please refer (Small Signal Transistor (Lead Device) hand book marked , 723 RN1503 RN1504 RN1505 RN1506 RN1507 RN1508 · Please refer [Small Signal Transistor (Lead , 947 947 953 953 953 958 958 962 965 968 971 · Please refer (Small Signal Transistor (Lead Device , 1106 1108 1110 1112 1114 Type No. Page · Please refer (Small Signal Transistor (Lead Device -
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02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124
Abstract: BDP 947, BDP 949 Silicon NPN Transistor â'¢ For AF driver and output stages 4 â'¢ High collector current â'¢ High current gain â'¢ Low collector-emitter saturation voltage 3 â'¢ Complementary types: BDP 948, BDP 950 (PNP) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 Infineon Technologies
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947 transistor
Abstract: BDP 947, BDP 949 Silicon NPN Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP 948, BDP 950 (PNP) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949 Collector-emitter Infineon Technologies
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transistor a 949 TRANSISTOR bdp 948
Abstract: , standard voltage translation ICs, and transistor drivers. For applications incorporating multiple M -
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M-947 teltone m-947 bo 947 M947 bd 743 transistor 947s 579-MH 22121-20H
Abstract: . All M-947 outputs interface with CMOS, standard voltage translation ICs, and transistor drivers. For -
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Abstract: ERICSSON $ PTB 20183 30 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor (P re lim ina ry) Description The 20183 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 935 960 MHz frequency band. It Is rated at 30 Watts minimum output power and may be used for both CW and PEP applica tions. Ion implantation, nitride surface passivation and gold metalization are used to ensure excellent device uniformity, ruggedness and reliability. 100% LotTraceability -
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20183 IC 935
Abstract: ERICSSON ^ (Preliminary) r PT R o n i7 l I D ¿ U 1 f i 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960 MHz frequency band. It is rated at 25 Watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metalization are used to ensure excellent device uniformity, ruggedness and reliability -
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transistor b 1166
Abstract: CM OS, standard voltage translation ICs, and transistor drivers. For applications incor porating m -
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8048 printer 579-M
Abstract: Input Diode IF VR PD Output Transistor VCEO VECO IC PD 50 mA 5.0 V 100 mW 30.0 V 4.5 V 20 mA 100 mW Fairchild Semiconductor
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QRB1134 phototransistor 3 pin 2 pin phototransistor 3 pin phototransistor 0703 transistor reflective sensor 4 pin QRB1133 QRC1133
Abstract: mA 100 mW Output Transistor VCEO VECO IC PD www.fairchildsemi.com/products/infrared 32 Fairchild Semiconductor
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QRB1113 qrb1114 QRB1114 QRC1113
Abstract: Diode Continuous Forward Current Reverse Voltage Power Dissipation Output Transistor 30.0 V 4.5 V ~ 100 , Dissipation Output Transistor Cotlector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Derate linearly at 1.67 mW/°C above 25°C for Input Diode and Output Transistor. Derate linearly at 1.33 mW/° C above 25° C for Input Diode and Output Transistor. 48 -
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QRD1114 A1273 transistor 48 A-1273 OPB703 OPB704 OPB705 OPB703W OPB704W OPB706A
Abstract: Dissipation Output Transistor Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 30.0 V 4.5 , Temperature (Flow) Input Diode Continuous Forward Current Reverse Voltage Power Dissipation Output Transistor , Output Transistor Derate linearly at 1.33 mW/° C above 25° C for Input Diode and Output Transistor -
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QRD1113 QRD1313
Abstract: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 · Internal Input/Output Matching Networks · PG = 6.0 dB at 1000W/1090 MHz · OmnigoldTM Metalization System 4X.060 R F .050 NOM. .210 G H I J K L MAXIMUM RATINGS MAXIMUM DIM MINIMUM inches / mm Advanced Semiconductor
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c 1685 transistor 1000W transistor 1334 1000W TRANSISTOR NPN 1000w
Abstract: . Comparing H-Hp on Uncut and Cut . 14 . FIGURES 1. Typical Driven Transistor Inverter , circuit is a driven transistor switch arrangement such as that shown in Figure 1. One important , impedance the current flowing in a switching transistor is limited only by its beta. Transformer leakage , . Figure 2 Ideal Square B-H Loop Figure 1 Typical Driven Transistor Inverter A Division of , and Q2. With switch S1 closed, transistor Q1 was turned on and allowed to saturate. This applied Magnetics
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supermalloy bh curve TRANSISTOR bH-16 MAGNESIL - N TRANSISTOR bH-10 nickel bh curve orthonol
Abstract: SD1476 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1476 is a planar transistor using diffused emitter ballasted resistors for high linearity Class AB operation in VHF and band 1 television transmitters and transposers. PACKAGE STYLE .450 BAL FLG(B) A B .120 x 45° FEATURES: FULL R C E D · Common Emitter · PG = 12 dB at 240 W/88 MHz · OmnigoldTM Metalization System M .208 4X.060 R F .050 NOM. .210 G H I J K MAXIMUM RATINGS 25 A IC L Advanced Semiconductor
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TRANSISTOR K 135 J 50 AN-4609
Abstract: compatibilty to Sink logic BMXDDI3202K BMXDDI6402K DC Transistors DC Transistor DC Transistor Telemecanique
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BMXDDI1602 BMXDAI1604 BMXDAI1602 BMXDAI1603 BMXDDO1612 BMXDDO3202 BMXFTB2000 BMXDDO1602 bmxdra1605 BMXDRA0805 BMXFTB2020 24VDC 24VAC BMXDDI1603
Abstract: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 9 35-960 MHz Class AB Characteristics Gold -
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TIC55
Abstract: BDP947, BDP949 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) 4 3 2 1 VPS05163 Type BDP947 BDP949 Maximum Ratings Parameter Marking BDP 947 BDP 949 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BDP 947 45 45 5 3 5 200 500 3 150 BDP 949 60 60 5 Unit V Collector-emitter voltage Infineon Technologies
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bdp 11 marking bdp
Abstract: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 935-960 MHz Class AB Characteristics Gold -
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Abstract: . .100 mW(1) OUTPUT TRANSISTOR Collector-Emitter Voltage , 2.0 V OUTPUT TRANSISTOR Emitter-Collector Breakdown BVceo 5 _ V lE = 100 /uA Collector-Emitter -
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tip 420 transistor silicon diode temperature sensor st178 ST1781
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