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Part : FN9289E-6-06 Supplier : Schaffner Manufacturer : Avnet Stock : - Best Price : €21.4467 Price Each : €26.8083
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89e-6

Catalog Datasheet MFG & Type PDF Document Tags

STW0

Abstract: 1B37A V_pgke /Vco5 Pl_b0 89E6 8=E 9 , - ?5;7 859 8? :=7 87- 8? ?E Tgah4qm Zlip_ec ZHG 89 89E6 8=E Q_t5 , Hcopnqapgrc 8777j6o9 Zg`n_pglk Vcogop_kac 87 pl8 , 4;7 pl ?
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STW0 1B37A NOA 87 87777 9758 j644 5AGUG79778778 777ZE6 777ZE 9777ZE 7AB71A 8777Q

HPA Ku

Abstract: 2 Watt Power Amplifier from 8.9E+6 to 4.2 E+4 hours. 4/ Combinations of supply voltage, supply current, input power , ) TM (HRS) 11.67 8.9E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a
TriQuint Semiconductor
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TGA2503-EPU TGA1152-SCC HPA Ku 2 Watt Power Amplifier TGA1152-EPU RF 300C

Q201

Abstract: TGA1152-EPU temperature of 70 0C, the median life is reduced from 8.9E+6 to 4.2 E+4 hours. 4/ Combinations of , ID = 682 mA Pdiss = 4.774 W TCH (oC) 125.74 RJC (°C/W) ° 11.67 TM (HRS) 8.9E+6
TriQuint Semiconductor
Original
Q201

TGA2503

Abstract: TGA2503-EPU from 8.9E+6 to 1E+6. 4/ These ratings apply to each individual FET. 5/ Junction operating , (HRS) 125.74 TEST CONDITION 11.71 8.9E+6 Note: Assumes eutectic attach using 1.5mil 80
TriQuint Semiconductor
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TGA2503

39dBm

Abstract: capacitors coefficient of thermal expansion median life is reduced from 8.9E+6 to 4.2 E+4 hours. 4/ Combinations of supply voltage, supply , (°C/W) TM (HRS) 11.67 8.9E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn
TriQuint Semiconductor
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39dBm capacitors coefficient of thermal expansion

TGA2505

Abstract: median life is reduced from 8.9E+6 to 1E+6. 4/ These ratings apply to each individual FET. 5 , 4.48W TCH (qC) RTjc (qC/W) MTTF (HRS) 125.74 TEST CONDITION 12.44 8.9E+6 Note
TriQuint Semiconductor
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TGA2505

TGA2505

Abstract: TGA2505-EPU plate temperature of 70°C, the median life is reduced from 8.9E+6 to 1E+6. 4/ These ratings apply , 8.9E+6 Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70
TriQuint Semiconductor
Original
TGA2505-EPU
Abstract: base plate temperature of 70 °C, the median life is reduced from 8.9E+6 to 1E+6. These ratings apply to , 640mA PD = 4.48W TCH (qC) RTjc (qC/W) 12.44 MTTF (HRS) 8.9E+6 125.74 Note: Assumes eutectic attach TriQuint Semiconductor
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Abstract: =3.9) .MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.7e-9 IS=1e-30 N=10 M , =2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9) dp.model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6 KERSEMI
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KSM038AN06A0 KSMI038AN06A0 KSM038AN06A FDP038AN06A0T FDP035AN06A0T

fds8896

Abstract: =2.6e-3 TRS1=8e-4 TRS2=2e-7 + CJO=8.8e-10 M=0.57 TT=1e-12 XTI=2.2) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6 , =2e-7,cjo=8.8e-10,m=0.57,tt=1e-12,xti=2.2) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6
Fairchild Semiconductor
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fds8896 FDS8896
Abstract: DBREAKMOD D (RS = 0.22 TRS1 = 8e-4 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 1.27e-9 IS = 1e-30 N = 10 M = , 9e-10, m = 0.45) dp.model dbreakmod = (rs = 0.22, trs1 = 8e-4, trs2 = -8.9e-6) dp.model dplcapmod = Fairchild Semiconductor
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ISL9N305ASK8T

TD 2012

Abstract: 1E5 MARKING =2.7e-3 TRS2=2e-7 + CJO=1.6e-9 M=0.55 TT=5e-12 XTI=3.9) .MODEL DbreakMOD D (RS=8e-1 TRS1=5e-4 TRS2=-8.9e-6 , =8e-1,trs1=5e-4,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.05e-9,isl=10e-30,nl=10,m=0.45) m.model mmedmod =
Fairchild Semiconductor
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TD 2012 1E5 MARKING FDB070AN06A0

marking m062

Abstract: FDB2552-F085 =3.0e-3 TRS2=1.5e-6 + CJO=1.9e-9 M=0.62 TT=5.1e-8 XTI=4.2) .MODEL DbreakMOD D (RS=0.3 TRS1=3.0e-3 TRS2=-8.9e-6 , (rs=0.3,trs1=3.0e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=5.7e-10,isl=10.0e-30,nl=10,m
Fairchild Semiconductor
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marking m062 FDB2552-F085 FDB2552

FDB8874

Abstract: =3) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.12e-9 IS=1e-30 N=10 M , =1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.12e-9,isl=10e-30,nl=10,m=0.42) m.model mmedmod = (type=_n
Fairchild Semiconductor
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FDB8874

AN7254

Abstract: AN7260 8e-6 + CJO = 12.5e-10 TT = 1e-7 M = 0.42) .MODEL DBREAKMOD D (RS = 2. 5TRS1 = 1e- 3TRS2 = -8.9e-6 , dbreakmod = (rs=2.5, trs1=1e-3, trs2=-8.9e-6) dp.model dplcapmod = (cjo = 2.5e-9, isl =10e-30, nl=10, m =
Fairchild Semiconductor
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HUF75939P3 HUF75939S3ST AN7254 AN7260 AN9321 AN9322 75939P 75939S
Abstract: =1.5e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=4.1e-10 IS=1e-30 N=10 M=0.45) .MODEL MmedMOD NMOS , =3.9) dp.model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=4.1e-10,isl=10e-30,nl Fairchild Semiconductor
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FDD13AN06A0

M066

Abstract: tl 022 =1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=.43e-9 IS=1e-30 N=10 M=0.66) .MODEL MmedMOD NMOS (VTO=3.5 KP , =1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=.43e-9,isl=10e-30,nl=10,m=0.66) m.model mmedmod =
Fairchild Semiconductor
Original
FDP42AN15A0 FDB42AN15A0 FDI42AN15A0 M066 tl 022

FDD10AN06A0

Abstract: =5.3e-1 TT=4.2e-8 XTI=3.9) .MODEL DbreakMOD D (RS=2.7e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO , =2.7e-1,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=4.7e-10,isl=10e-30,nl=10,m=0.44) m.model mmedmod
Fairchild Semiconductor
Original
FDD10AN06A0
Abstract: =3.9) .MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=4.1e-10 IS=1e-30 N=10 M , =1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=4.1e-10,isl=10e-30,nl=10,m=0.45) m.model mmedmod Fairchild Semiconductor
Original
Abstract: =1.8e-3 TRS1=8e-4 TRS2=2e-7 + CJO=2e-9 M=0.57 TT=1e-10 XTI=0.9) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6 , =0.9) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.6e-9,isl=10e-30,nl=10,m Fairchild Semiconductor
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FDD8870 FDU8870 F085/FDU8870
Abstract: = 0.49) .MODEL DBREAKMOD D (RS = 1.7e-1 TRS1 = 1e-3 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = , , trs1 = 1e-3, trs2 = -8.9e-6) dp.model dplcapmod = (cjo = 8.2e-10, isl=10e-30, nl=10, m=0.45) m.model Fairchild Semiconductor
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FQB95N03L

n10 diode

Abstract: KP235 =3.9) .MODEL DbreakMOD D (RS=1.5e-1 TRS1=1.0e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.5e-9 IS=1.0e-30 N=10 M , =5.6e-1,tt=2.38e-8,xti=3.9) dp.model dbreakmod = (rs=1.5e-1,trs1=1.0e-3,trs2=-8.9e-6) dp.model dplcapmod
Fairchild Semiconductor
Original
FDH038AN08A1 n10 diode KP235 KP-15 74E3 tc150e3

67E-3

Abstract: FDI038AN06A0 =3.9) .MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.7e-9 IS=1e-30 N=10 M , =4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9) dp.model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp.model
Fairchild Semiconductor
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FDP038AN06A0 FDI038AN06A0 67E-3

N302AP

Abstract: ISL9N302AP3 (RS = 0.25 TRS1 = 1e-3 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 3.9e-9 IS = 1e-30 N = 10 M = 0.48 , dbreakmod = (rs = 0.25, trs1 = 1e-3, trs2 = -8.9e-6) dp.model dplcapmod = (cjo = 3.9e-9, isl=10e-30, nl
Fairchild Semiconductor
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ISL9N302AP3 N302AP l 129 v 1E25 1E40

19E-9

Abstract: Mosfet FDP8870 =8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.75e-9 IS=1e-30 N=10 M=0.4) .MODEL MmedMOD NMOS (VTO , =2.6) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.75e-9,isl=10e-30,nl
Fairchild Semiconductor
Original
FDP8870 19E-9 Mosfet FDP8870

2e7 power diode

Abstract: TC124E =2.2) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=9.4e-10 IS=1e-30 N=10 M , =0.57,tt=1e-16,xti=2.2) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo
Fairchild Semiconductor
Original
FDP8896 2e7 power diode TC124E 46E-1 KP350 46e1 nl101
Abstract: =8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.12e-9 IS=1e-30 N=10 M=0.42) .MODEL MmedMOD NMOS , =3) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.12e-9,isl=10e-30,nl Fairchild Semiconductor
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FDP8874
Abstract: (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.12e-9 IS=1e-30 N=10 M=0.42) .MODEL , =1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo=1.12e-9,isl=10e-30,nl=10,m=0.42) m.model mmedmod = (type=_n Fairchild Semiconductor
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FDP047AN08A0

Abstract: FDH047AN08A0 5.4e-1) .MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 1.35e-9 IS , = 1e-3, trs2 = -8.9e-6) dp.model dplcapmod = (cjo = 1.35e-9, isl =10e-30, nl =10, m = 0.53
Fairchild Semiconductor
Original
FDP047AN08A0 FDH047AN08A0 fairchild s1a diode fdp047an FDI047AN08A0
Abstract: =8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.75e-9 IS=1e-30 N=10 M=0.4) .MODEL MmedMOD NMOS (VTO , =9e-11,xti=2.6) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model dplcapmod = (cjo Fairchild Semiconductor
Original
Abstract: =1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.12e-9 IS=1e-30 N=10 M=0.42) .MODEL MmedMOD NMOS (VTO=2 KP , =2e-7,cjo=1.22e-9,m=0.57,tt=3e-12,xti=3) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model Fairchild Semiconductor
Original

19E-9

Abstract: FDP8870 =2.6) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.75e-9 IS=1e-30 N=10 M , =1.9e-9,m=0.57,tt=9e-11,xti=2.6) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model
Fairchild Semiconductor
Original
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