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88-MH

Catalog Datasheet MFG & Type PDF Document Tags

2SK3529-01

Abstract: mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH , RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt
Fuji Electric
Original
2SK3529-01

mosfet 600V 7A N-CHANNEL

Abstract: mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH , RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt
Fuji Electric
Original
mosfet 600V 7A N-CHANNEL

thd2000

Abstract: DT32-3004 10% PRI: 440uH PRI: 12.83mH 10% PRI: 8.8mH @10KHz 0.1V SEC: 3.96mH 10% @10KHz
Delta Electronics
Original
DT32-3004 thd2000 DT32-3001 DT32-3005 DT32-3006 DT32-XXXX 100KH
Abstract: Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 , =10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt=100A/µs Tch=25°C Min. 800 3.0 Typ Fuji Electric
Original

2SK3530

Abstract: 2SK3530-01MR ) Gate(G) Source(S) °C °C kVrms < *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph , =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V Min. 4.1 RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH
Fuji Electric
Original
2SK3530-01MR 2SK3530 power mosfet 600v

2SK3530

Abstract: 2SK3530-01MR Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 < *1 L=8.8mH, Vcc=80V, Tch=25°C See to , =3.5A VGS=10V RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt
Fuji Electric
Original
DSA00259476

thomson airpax

Abstract: 26DBM05D2B-K Phase 14.6Ã2 84.0Ã2 14.6C3 84.00 Inductance Per phase 5.2mH Ref 27.5mH Ref 8.8mH Ref 46.3mH Ref , phase 5.2mH Ref 27.5mH Ref 8.8mH Ref 46.3mH Ref It is the responsibility of the product user to
-
OCR Scan
26DBM-K 26DBM05B2U-K 26DBM10B1U-K 26DBM20B2U-K thomson airpax 26DBM05D2B-K 356N Thomson Airpax Mechatronics 26DBM20D2U-K 26DBM 26DBM05B1U-K 26DBM10B2U-K

smd 33a

Abstract: 33A SMD DIODE temperature (See Figure 11) © Vdd=50V, starting Tj=25°C, L=8.8mH Rq=25Q, Ias=3.3A (See Figure 12) ® Isd
-
OCR Scan
IRF610S SMD-220 smd 33a 33A SMD DIODE smd diode JJ 1RF610 AN-994

IRF610

Abstract: power MOSFET IRF610 =50V, starting Tj=25°C, L=8.8mH Rg=25£2, Ias=3.3A (See Figure 12) © Isd
-
OCR Scan
IRF610 power MOSFET IRF610 33a marking
Abstract: )DSS, T j -
OCR Scan
4A554S2 0014L
Abstract: /gs, VddSV(br)DSS, sd © Vdd=50V, starting Tj=25°C, L=8.8mH Rg=25Q, Ias =3.3A (See Figure 12 -
OCR Scan

FQP1P50

Abstract: : Pulse width limited by maximum junction temperature 2. L = 88mH, IAS = -1.5A, VDD = -50V, RG = 25
Fairchild Semiconductor
Original
FQP1P50

IRF6646

Abstract: IRF6646TR1 . Starting TJ = 25°C, L = 8.8mH, RG = 25, IAS = 7.2A. 1 11/04/05 IRF6646 Static @ TJ = 25°C (unless
International Rectifier
Original
IRF6646TR1 96995E AN-1035
Abstract: ; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 8.8mH, RG = 25â"¦, IAS = International Rectifier
Original
96995D
Abstract: temperature 2. L = 88mH, IAS = -1.5A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD -1.5A, di/dt 200A/µs Fairchild Semiconductor
Original
FQB1P50 FQI1P50

IRF6646TR1PBF

Abstract: VDS-40V Qg 20nc ; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 8.8mH, RG = 25, IAS = 7.2A
International Rectifier
Original
IRF6646TRPBF IRF6646TR1PBF VDS-40V Qg 20nc IRF6646P IRF6646TRP

GS 069

Abstract: FQB1P50 . Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 88mH, IAS = -1.5A, VDD = -50V
Fairchild Semiconductor
Original
GS 069 FQB1P50/FQI1P50
Abstract: Starting TJ = 25°C, L = 8.8mH, RG = 25â"¦, IAS = 7.2A. 1 11/04/05 IRF6646 Static @ TJ = 25 International Rectifier
Original
Abstract: .  Starting TJ = 25°C, L = 8.8mH, RG = 25â"¦, IAS = 7.2A. 1 08/12/05 IRF6646 Static @ TJ = International Rectifier
Original
96995C

IRF6646

Abstract: IRF6646TR1 . Starting TJ = 25°C, L = 8.8mH, RG = 25, IAS = 7.2A. 1 06/08/05 IRF6646 Static @ TJ = 25°C (unless
International Rectifier
Original

Wiring Diagram led module

Abstract: mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH , RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt
Weidmüller
Original
Wiring Diagram led module EC001856

TFC 718 S

Abstract: sony KSS 121 mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH , RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt
-
OCR Scan
TFC 718 S sony KSS 121 sony KSS 123 kss 213 c sony sony KSS 213 b DSP56007/D DSP56007 24-BIT DSP56000 DSP56004 DSPB560071

1771-OBN

Abstract: 1705940000 ) Gate(G) Source(S) °C °C kVrms < *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph , =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V Min. 4.1 RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH
Weidmüller
Original
1771-OBN 1705940000 181945 SAI-A-M12-4-PB-8DIO-L SAI-A-M12-4-PB-8DO-L m23g 44IL-M23G-M23G-6-6U-L AIL-M12G-3-1 SAIL-M12G-3-3 SAIL-M12G-3-5 SAIL-M12G-3-10U
Abstract: Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 < *1 L=8.8mH, Vcc=80V, Tch=25°C See to , =3.5A VGS=10V RGS=10 VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt Weidmüller
Original
Abstract: Phase 14.6Ã2 84.0Ã2 14.6C3 84.00 Inductance Per phase 5.2mH Ref 27.5mH Ref 8.8mH Ref 46.3mH Ref , phase 5.2mH Ref 27.5mH Ref 8.8mH Ref 46.3mH Ref It is the responsibility of the product user to Weidmüller
Original
Abstract: Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 , =10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt=100A/µs Tch=25°C Min. 800 3.0 Typ Weidmüller
Original
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