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851-MH

Catalog Datasheet MFG & Type PDF Document Tags

T07 marking

Abstract: rf 12 pin marking #046 = fi=8£ =5V 50MHz, f2=851MH Z y '' Ã' ^ -î» » * ^ I f J^ f V y W t / / â  / B J
-
OCR Scan
KGF1181B T07 marking rf 12 pin marking #046 4pin Marking BM 724E40 L72424G E42M0

Adjustable Gain Fully Differential output dual

Abstract: 741MH 47 nH 8-109 RF2461 Evaluation Board Schematic - JCDMA LO@741MHz, RF@851MHz, IF@110MHz P1
RF Micro Devices
Original
Adjustable Gain Fully Differential output dual 741MH RF2461PCBA-41X 900MH IS-98B 881MH 965MH

QFN20

Abstract: RF3863 -10 dB OIP3 2 of 8 f1 =850MHz, f2 =851MHz 7628 Thorndike Road, Greensboro, NC
RF Micro Devices
Original
RF3867 QFN20 RF3863 RF3867PCK-410 RF3867PCK-411 RF3867PCK-412 700MH 3800MH

K&L Microwave

Abstract: WSF-00050 ESMR Receive Filter Features: ¥ Low insertion loss; 20dB typical ¥ High rejection in transmit band; >95dB typical @ >851MHz ¥ Temperature stabilized - holds specifications at thermal extremes Passbands: Passband Insertion Loss: Rejection: DC-780MHz 851-2598MHz Passband Return Loss: 806-821MHz 1.0dB maximum 70dB minimum 85dB minimum 16dB minimum Operating Temperature: Storage Temperature: Operating Humidity: Dimensions: Connectors: -10 to +45¡C -40
K&L Microwave
Original
K&L Microwave DC-780MH 851-2598MH 806-821MH

bts 2106

Abstract: free sem 2106 ACLR1, PAE vs Pout @ 851MHz Vdd=VddBias=5.0V operating voltage Figure 9. Over-temperature ACLR1, PAE , 32 33 34 35 36 37 38 Pout/dBm Figure 24. Over-temperature Gain, Idd_Total vs Pout @ 851MHz , -2.5 0 2.5 5.0 Frequency O set/MHz 7.5 10.0 12.5 Figure 29. SEM at Pout=28dBm @ 851MHz Figure 30
Avago Technologies
Original
bts 2106 free sem 2106 sem 2106 24 pin sem 2106 data set 10931 sem 2106 MGA-43428 880MH 64DPCH MGA-43428-BLKG MGA-43428-TR1G AV02-3796EN

433 mhz rf power amplifier module efficiency

Abstract: 433 mhz rf amplifier module POWER 100.0 1000 f=851MHz VDD=12.5V VGG=5V PO 10.0 -5 100 OUTPUT POWER, TOTAL , 100 f=851MHz VDD=12.5V Pin=1mW ZG=ZL=50 18 90 PO 0 3.4 3.8 4.2 4.6 5.0 3.2 3.6 , . DRAIN SUPPLY VOLTAGE 18 90 f=851MHz VGG=5V Pin=1mW ZG=ZL=50 16 14 PO 80 70 12
Mitsubishi
Original
M68701 433 mhz rf power amplifier module efficiency 433 mhz rf amplifier module 820-851MH 820MH
Abstract: 22.5 dBm S11 -14 dB S22 -18 dB 51 f1 =850MHz, f2 =851MHz °C/W Thermal RF Micro Devices
Original
RF3861 400MH QFN16 RF3861PCK-410 1300MH 800MH

RF3866

Abstract: GSM900 S11 -10 dB S22 -12 dB S12 -48 dB 30 °C/W f1 =850MHz, f2 =851MHz
RF Micro Devices
Original
RF3866 GSM900 RF3866PCK-410 DS100121 1100MH

ta018

Abstract: - DC ~ 840MHz (dB) 45 50 - 840 ~ 851MHz (dB) 38 45 - 914 ~ 924MHz (dB
Golledge Electronics
Original
ta018 MA05687 TA0184A 894MH 840MH 924MH 950MH

RA20H8087M

Abstract: RA20H8087M-101 8 IDD f=851MHz, VDD=12.5V, VGG=5V 10 0 20 -15 -10 INPUT POWER Pin(dBm) 20 , =806MHz, VGG=5V, Pin=50mW 70 16 f=851MHz, VGG=5V, Pin=50mW 70 60 14 12 50 10 IDD 40 , OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE f=851MHz, VDD=12.5V, Pin=50mW 50 12 IDD
Mitsubishi
Original
RA20H8087M RA20H8087M-101 806-870MH 870-MH

DC generator

Abstract: MAX2385EVKIT not turn on the generator's output. Set the generator to an output frequency of 851MHz and set the , spectrum analyzer to a center frequency of 851MHz and a total span of 10MHz. RF Signal Generators , supply, then activate the RF generator's output. An 851MHz signal shown on the spectrum analyzer display , the generator output. Set the signal generator to 851MHz and output power level to -30dBm. 5
Maxim Integrated Products
Original
MAX2385EVKIT MAX2386EVKIT DC generator MAX2385/MAX2386 GRM36X7R102K050A GRM36COG070B050A GRM36COG0R5B050A
Abstract: Effi vs. Po T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 50 45 -10 Gp 40 35 Mitsubishi
Original
806-869MH RA02M8087MD RA02M8087MD-101
Abstract: : Measured at RF = 171MHz with harmonics at 511MHz (3rd harmonic) and 851MHz (5th harmonic). Note 9: Delay Maxim Integrated Products
Original
MAX3580 170MH 230MH 470MH 878MH

H11S

Abstract: RA06H8285M-101 radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of , OUTPUT POWER Pout (dBm) Gp 5 4 3 2 I DD f=851MHz V DD=12.5V V GG=5V POWER GAIN Gp (dB) 40 30 , versus DRAIN VOLTAGE 20 OUTPUT POWER Pout (W) f=851MHz V GG=5V Pin=1m W Pout 4 15 3 10 I , DRAIN CURRENT versus GATE VOLTAGE 14 OUTPUT POWER Pout (W) 7 f=851MHz V DD=12.5V Pin=1m W Pout
Mitsubishi
Original
H11S RA06H8285M-101 marking CODE H11S RA06H8285M 851-MH
Abstract: NSVA277 Apr. 2013 NewJRC SAW FILTER NSVA277 Application Cordless telephone Electrical Specification: (Table 1) The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typ. Input and Output Impedance 50 Nominal Center Frequency (f0) 931MHz Insertion Loss 929.8~932.2MHz 3.5dB max. 3.4dB Response Variation 929.8~932.2MHz 1.5dB max. 1.0dB Input and Output VSWR 929.8~932.2MHz 2.5 max. 2.4 Out of Band Rejection DC~ New Japan Radio
Original
931MH 886MH 991MH 1500MH

EvalBoard

Abstract: TDA5252 S22 -12 dB OP1dB 2 of 11 f1 =850MHz, f2 =851MHz 7628 Thorndike Road, Greensboro, NC
Infineon Technologies
Original
TDA5252 EvalBoard TDA5250 TDA5255 lna vco mixer quadrature 2GHz pll fsk MODULATOR 915MH D-85579
Abstract: Schematic - JCDMA LO@741MHz, RF@851MHz, IF@110MHz P1 P1-1 1 2 P1-3 3 CON3 ENABLE IP SET IF SEL 20 LNA GAIN RF Micro Devices
Original
DS130515
Abstract: =200nH CC =1000pF Operating Current IDS (mA) VDS=5.8V, IDSQ=70mA f1=850MHz, f2=851MHz 300 RF Micro Devices
Original

GaAs FET sot89

Abstract: L3374 ) Output Power PO (dBm) VDS=5.8V, IDSQ=150mA f1=850MHz, f2=851MHz 1.2 3 ODRKGF1312
OKI Electric Industry
Original
GaAs FET sot89 L3374 KGF1283 ODRKGF1283-03 850MH
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