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Part Manufacturer Description Datasheet BUY
74CBTLV16800VRE4 Texas Instruments CBTLV/3B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48, GREEN, PLASTIC, TVSOP-48 visit Texas Instruments
74CBTLV16800VRG4 Texas Instruments CBTLV/3B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48, GREEN, PLASTIC, TVSOP-48 visit Texas Instruments
SN74CBTLV16800VR Texas Instruments Low-Voltage 20-Bit FET Bus Switch With Precharged Outputs 48-TVSOP -40 to 85 visit Texas Instruments Buy
PMP7764 Texas Instruments Non isolated flyback with 30 to 800V input and 20V @ 250mA output visit Texas Instruments
PMP7760 Texas Instruments 30V-800V input to 21V@1.5A output, High Voltage Flyback Converter visit Texas Instruments
PMP7763 Texas Instruments High voltage isolated DC/DC converter with 30 to 800V input and 24V @ 250mA ouput visit Texas Instruments

800v irf

Catalog Datasheet MFG & Type PDF Document Tags

IRF4905 equivalent

Abstract: 800v irf IRF610 90326 IRF620/L620 90317/91217 IRF630/L630 90309/91255 IRF/LI640G 90649/91237 0.085 , 400 LC Super247 IRF/LI620G 90832/91235 IRF/LI630G 90652/91236 IRF/L640 90374/91089 TO , 0.400 600 LC 0.600 IRFBC40LC 91070 1.200 IRFIBC40GLC 91211 1.200 800V 2.000
International Rectifier
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IRFZ48N IRF3205 IRFP064N IRFP448 IRFPS473LC IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 IRL2703

irf510 switch

Abstract: IRFBA40N60C L IRLU3410 91607 IRF/L510L 90895/907 IRF520NL 91340 IRL520NL 91494 IRF530NL 91352 IRL530NL 91349 , IRF630/L630 90309/91255 IRF/L640 90374/91089 IRFIZ34E 91674 IRFI9Z14G* 90840 IRFI9Z24G* 90841 , 0.800 0.400 IRF/LI620G 90832/91235 IRF/LI630G 90652/91236 IRF/LI640G 90649/91237 IRFP240 90444 , IRFPG30 90621 IRFPF30 90618 IRFPE30 90612 0.900 Y IRFB9N65A 91815 IRFIB5N65A 91816 800V 2.000 3.000
International Rectifier
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IRFBA40N60C irf510 switch IRL2505 IRF540NL IRF634L IRFU9024N 220TM 247TM IRLU2703 IRFU3303 IRLU3303 IRFU3103

800v irf

Abstract: irf 480 PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE
International Rectifier
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IRFBE30S IRFBE30L irf 480 95507 IRFBE30SP IRFBE30LP E30S/LP F530S

SSF6N80A

Abstract: Advanced Power MOSFET SSF6N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate Oxide Technology â  Lower Input Capacitance â  Improved Gate Charge â  Extended Safe Operating Area â  Lower Leakage Current : 25 nA (Max.) @ VDS = 800V â  Low RDS(ON) : 1.472 ii (Typ.) BVdss = , Drain-to-Source Leakage Current - â'" 25 HA VOS=800V - - 250 Vds=640V,Tc=125',C ^DS(on) Static Drain-Source , lif irf , Draiii-ScurÅ" \fcltage M 20 30 40 50 g. , HXal Gâte Cbagï [rC) â  DOMOsaa in â
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OCR Scan
GD4D22S
Abstract: d www.irf.com IRLML0030TRPbF 100 100 10 BOTTOM VGS 10.0V 8.00V 4.50V 3.50V , (Normalized) ID, Drain-to-Source Current (A) VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V , IRLML6246 U = IRLML6344 V = IRLML6346 W = IRF ML8244 X = IRLML2244 Y = IRLML2246 Z = IRF ML9244 International Rectifier
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96278B IRLML0030TRP EIA-481 EIA-541 D-020D AN-994

P-Channel MOSFET 800v

Abstract: 800v irf PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 10V, ID = 2.5A V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V, VGS = 0V VDS = , ) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000
International Rectifier
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P-Channel MOSFET 800v IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET IRL3103L P Channel Power MOSFET IRF ED marking code diode IRFBE30S/LP EIA-418

IRF CATALOG

Abstract: UFT15005 * 500V 500V UFT15260» 600V 600V UFT15270» 700V 700V UFT15280* 800V 800V Add Suffix A for Common Anode , \ fin0 i?rf 18(1° nn 0 .2 .6 1.0 1.4 1.8 2.2 Instantaneous Forward Voltage - Volts 2.6 0 30 60 90
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OCR Scan
UFT15005 UFT15010 UFT15015 UFT15020 UFT15120 UFT15130 IRF CATALOG

IRLML6346

Abstract: IRLML6344 =1.6A di/dt = 100A/s d d 2 www.irf.com IRLML0030TRPbF 100 TOP VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V 100 TOP VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V ID , IRLML6344 V = IRLML6346 W = IRF ML8244 X = IRLML2244 Y = IRLML2246 Z = IRF ML9244 24 25 26 X Y Z WW
International Rectifier
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IRLML9303 IRFML9244 IRLML6244 irlml0030tr IRLML0030TRPBF Diode SOT-23 marking JE

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode Current Sensing Method 20A­30A/40V Schottky Rectifiers 100%­400% Current Amplification 6A/800V , FQP13N50 RHRD460/S 1V5KE440CA MB6S IRF/S/W840B P6KE400A Transistor S1J/K SSP/S , Transceiver USB1T11A S-Correction IRF/IRFS630B 9A/200V N-Channel Power MOSFET IRF/IRFS6408 18A , USB 1.1 Transceiver Power Management Functions Audio Power Amplification IRF/IRFS630B N-Channel 9A/200V Power MOSFET FAN7000 300mW Audio Amplifier (stereo) IRF/IRFS634B N-Channel
Fairchild Semiconductor
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500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps SB550 transistor S-17148

9n90c

Abstract: 9n50c Best 800V ~ 900V Line-up Part No. General Device Name BVDSS (V) ID (A) VGS (V , 600V 3.0A 1.0A 650V 700V 800V 900V Drain-Source Breakdown Voltage (BVDSS) KEC-H , S2 C3 Q3 IRF BVDSS ID KHB9D5N20P/F D.Y Coil 630 200V 9.0A RDS (ON , Vout RDS Part Num. IRF BVDSS ID KHB8D8N25P/F 634 250V 8.8A 0.45 TO , Switching PFC Switch Part Num. IRF BVDSS ID Status Part Num. IRF BVDSS ID
KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000
Abstract: FEATURES B V DSS Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance â  V Improved Gate Charge â  A Lower Leakage Current : 25 |^A (Max.) @ V D = 800V S â  0 .9 5 Q. Extended Safe Operating Area â  LO CD â  ^ D S (o n ) = Q â  II â  - 00 o o SSF10N80A A d v a n c e d Power MOSFET Low Rds(0n , irf> @N)tes : 1. = 25 °C 2. TJ = 150 °C 3. Si ligie R i s e 13 Ã" 102 Qain-Source -
OCR Scan

P-Channel MOSFET 800v

Abstract: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0â"¦ G ID = 4.1A S Description Third Generation HEXFETs from , = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE
International Rectifier
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IRF 244 MOSFET

Abstract: FOR G-243 Summary Part Number bvdss RDS(on) "d IRFAE50 800V 1.2 n 7.1A IRFAE52 800V 1.40 6.6A FEATURES: â , IRFAE5C IRF ' < 25 50 75 â'¢ 100 125 Tc. CASE
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OCR Scan
IRF 244 MOSFET FOR G-243 G-243 International Rectifier MOSFET 443 LF 71A diode LF 71A T-39-13 G-239 G-244 G-245 G-246

P-Channel MOSFET 800v

Abstract: IRFBE30L PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE
International Rectifier
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IR igbt gate driver ic

Abstract: IGBT PNP 70 40 C50U IRGP BUX98 IR IGBT 20 gfe hfe IGBT 10 7 0 45 IRF , FAST ULTRAFAST RUGGED TSC RATED WARP 600V 800V 900V 1000V 1200V IR IGBT
International Rectifier
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IR igbt gate driver ic IGBT PNP 5A IGBT driver IC igbt 100V 5A mosfet ir 250 n irf 944 AN-983AJ AN-990AJ IRGBC20U IRG4BC40SIRG4BC40W IRF840LC 500V600V

10Kf6 diode

Abstract: ir2155 40w electronic ballast 40W 91K 11DF4 1/2W IR2151 N Notes IRF 720 7 6 1µF 400V 22 0.1 µF 0.01 µF 600V + L2 IRF 720 5 22 40W PTC 10 1/2W 0.001µF 600v L3 *Polyproplylene , excess of 800V RMS for reliable starting of any lamp at low ambient temperatures. The circuit shows a , voltage for each lamp. Even with a Q of only 2, the RMS lamp striking voltage exceeds 800V - more than , 2N2222A 4 7 IRF 624 NOTE 1 Select value for 70 watt lamp power. 2 Polypropylene capacitor 3
International Rectifier
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IR215X EE-30Z T106-26 10Kf6 diode ir2155 40w electronic ballast IR2155 equivalent IR2151 DT 94-3 self oscillating Electronic ballast 40W AN-995A IRF720 BE-30-1110CP

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 same high reliability planar technology used for the IRF series of packaged HEXFETs. The same advanced , KELVIN IS = CURRENT SENSE Figure 11. HEX-2: 800V, 900V, & 1000V, N-Channel SK * SOURCE KELVIN IS = , -3: 200V & 250V, N- and P-Channel Figure 17. HEX-3: 400V, 500V, & 600V, N-Channel Figure 18. HEX-3: 800V , -4: 400V, 500V, & 600V, N-Channel Figure 25. HEX-4.5: 500V, N-Channel Figure 26. HEX-4: 800V, 900V, & , 500V, N-Channel Figure 31. HEX-5: 400V, 500V, & 600V, N-Channel Figure 32. HEX-5: 800V, 900V, &
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AN-966 AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 1000V P-channel MOSFET irfc9024 AN-955 AN-986

IRFC9130

Abstract: irfc130 IRF series of packaged HEXFETs. The same advanced MOS processing techniques, silicon gate structure , « Figure 11. HEX-2. 800V, 900V, & 1000V, N-Channel -â'"WH â W Figure 12. HEX-3: 60V, N- and , 18. HEX-3: 800V, 900V, & 1000V, N-Channel All dimensions shown in Inches/mm Die dimensions are from , Figure 2«. HEX-4.5: 500V, N-Channel Figure 2*. HEX-4: 800V, 900V, & 1000V, N-Channel Figure 27. HEX , , N-Channel Figure 32. HEX-5: 800V. 900V, & 1000V. N-Channel -mâ'" â'"-I Figure 33. HEX-6: 200V, 400V &
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OCR Scan
IRFC9130 irfc130 IRLC024 IRLC034 IRFC9014 irfcg20
Abstract: VR = 800V, Tj=150° C & 25°C Total capacitive charge QC VR QC ï'½  C (V )dV 0 Total , 1200 Figure 6. Typical reverse characteristics per leg, IR=f(VR), parameter: Tj 1) guaranteed by Infineon Technologies
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IDW20G120C5B
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