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LT1356CS16 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDSO16, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1356CN14 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1056MN8 Linear Technology IC OP-AMP, 800 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1014IS Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO16, PLASTIC, SOL-16, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1367CS8 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1014DS Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO16, PLASTIC, SOL-16, Operational Amplifier visit Linear Technology - Now Part of Analog Devices

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800/533/400MH

Catalog Datasheet MFG & Type PDF Document Tags

S0146

Abstract: - 400MHÏ f = 400MH* 1 * 1MHz Test Conditions Min, v cs * 2 av VCE = 20 V Vc b «2SV I e «0 70.0 B.4 6S.0 80.0 Valu« Typ. Max. W da pF Unit A P P L IC A T IO N IN F O R M A T IO N (typical curvfts , /24,89 ,105/2,67 .170/4.32 .380/7. ?1 045? 1. 14 BSC 1 J K L M . .885/21.97 .210/5.33 .510
-
OCR Scan
S0146 SD1460 S01468 SD1468 200-500MH 408MHS 600SLFL

PDZ702NB

Abstract: PDZ70NB KODENSHI NEWS RELEASE 2008/2/28 ZnO/Si *ZnO/Si pn "PDZ70NB"* IC PDZ702NB 600400() 0.28A/W@P= 405nm PDZ702NB :600 400MH @VR=2V ():400 900MH @VR=2V 2.0(L)×1.4W)×0.8H)mm N PN 1. ( *LED 2. ( PN * * 1 / 3 KODENSHI NEWS RELEASE pn 0.1m 1m P+ N- Si0.1m 1m pn PN ZnO/Si (ZnO) pn ZnO pn , 400 600 800 10 100 Frequency ( MHz ) 1000 Wavelength ( nm ) 3 / 3 1000
Kodenshi
Original
405nm LED
Abstract: Arms On-State Voltage Drop 1.1 VP (at IL=2AP) Blocking Voltage 800 VP RJC , Storage Temperature 1 2 Min - Max 800 5 50 1 150 3.5 Units - 200 A2s - 40 - , LED Current to Operate vs. Load Frequency - Inductive Load (VL=200V, ZL=400mH/220Ω, TA , . Temperature - Inductive Load (IL=500mA, fL=60Hz, LL=400mH) 7.5 3.5 5.20 LED Forward Current (mA , Temperature (ºC) 80 100 Breakdown Voltage vs. Temperature (IF=0mA) 950 900 850 800 -40 IXYS
Original
CPC1998 CPC1998J 800VP 2500V DS-CPC1998-R03
Abstract: 2.25 V, OUT switching 12 7.0 4.5 12.8 7.5 5.0 340 800 0.1 0.65 0.84 120 12 170 13.5 8.0 5.5 420 V V V , C004 TEMPERATURE (C S) TEMPERATURE (C S) Figure 3. VRST vs. Temperature 800 790 780 ICCOP(µA , è ø ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 127V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè , ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè û = 62.3kHz = , = · Lp · ç ÷ · Freq _ LL · h 2 è Rsense ø 1 æ 0.5 ö Pout _ LL = · 400mH · ç ÷ · 49.6kHz · 0.86 = Texas Instruments
Original
LM5023 SNVS961C ISO/TS16949
Abstract: 2.25 V, OUT switching 800 PRODUCT PREVIEW BIAS SUPPLY INPUT µA SHUTDOWN CONTROL (VSD , 125 C004 Figure 4. ICCST vs. Temperature 800 132 790 131 780 130 FMAX(kHz , ¨ ø ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 127V ÷ + (19V + , æ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè à , · h 2 è Rsense ø 2 1 æ 0.5 ö Pout _ LL = · 400mH · ç ÷ · 49.6kHz · 0.86 = 94.9W Texas Instruments
Original
SNVS961A

transistor 2Ap

Abstract: CPC1998J Load Current With 5°C/W Heat Sink No Heat Sink On-State Voltage Drop Blocking Voltage RJC 20 5 1.1 800 , Temperature Storage Temperature 1 2 CPC1998 Min - 40 - 40 Max 800 5 50 1 150 3.5 200 2500 8 +85 +125 , Operate vs. Temperature - Inductive Load (IL=500mA, fL=60Hz, LL=400mH) 1.5 1.4 1.3 1.2 1.1 -40 LED , =200V, ZL=400mH/220, TA=25ºC) LED Forward Current (mA) 5.20 5.18 5.16 5.14 5.12 5.10 LED Current to , 100 0 10 20 30 40 50 60 70 Temperature (ºC) 80 90 100 800 -40 -20 0 20
IXYS
Original
transistor 2Ap RCA SCR RCA 518 DS-CPC1998-R02
Abstract: =2AP) Blocking Voltage 800 VP RJC 0.35 °C/W Features â'¢ Load Current up to 20Arms with 5 , Junction Temperature (TJ) Operational Temperature Storage Temperature 1 2 Min - Max 800 5 50 , 100 LED Current to Activate, Inductive (IL=500mA, 60Hz, 400mH) 7.0 6.5 6.0 5.5 5.0 4.5 , =800V VL=600V VL=400V 10 1 0.1 0.01 0.001 800 -40 1.0 100 Off-State Leakage Current , Frequency - Inductive Load (VL=200V, ZL=400mH/220Ω) LED Forward Current (mA) 5.20 LED Forward Current IXYS
Original
CPC40055ST DS-CPC40055ST-R02
Abstract: req=400MH z , V D S =12.5V , Idq=.4A S1C 1 DIE CAPACITANCE 1000 18.00 35 30 16.00 , Crss 10.00 5 0 1 8.00 0 0.5 1 1.5 2 2.5 3 P IN IN W A T T S 3.5 4 Polyfet RF Devices
Original
SQ721
Abstract: 2.25 V, OUT switching 800 PRODUCT PREVIEW BIAS SUPPLY INPUT µA SHUTDOWN CONTROL (VSD , 125 C004 Figure 4. ICCST vs. Temperature 800 132 790 131 780 130 FMAX(kHz , ¨ ø ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 127V ÷ + (19V + , æ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè à , · h 2 è Rsense ø 2 1 æ 0.5 ö Pout _ LL = · 400mH · ç ÷ · 49.6kHz · 0.86 = 94.9W Texas Instruments
Original
Abstract: current COMP = 2.25 V, OUT switching 800 µA SHUTDOWN CONTROL (VSD pin) IVSD OFF Off state , C004 Figure 4. ICCST vs. Temperature 800 132 790 131 780 130 FMAX(kHz) ICCOP , ¸ ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 127V ÷ + (19V + 0.7V)  , ¦ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè û = , 2 è Rsense ø 2 1 æ 0.5 ö Pout _ LL = · 400mH · ç ÷ · 49.6kHz · 0.86 = 94.9W 2 à Texas Instruments
Original

transistor 2Ap

Abstract: CPC1998 1.1 VP (at IL=2AP) Blocking Voltage 800 VP RJC 0.35 °C/W Features · · · · , - Max 800 5 50 1 150 3.5 Units - 200 A2s - 40 - 40 2500 8 +85 +125 , Current to Operate vs. Load Frequency - Inductive Load (VL=200V, ZL=400mH/220, TA=25ºC) 5.15 5.10 , Inductive Load (IL=500mA, fL=60Hz, LL=400mH) 7.5 3.5 5.20 LED Forward Current (mA) 4.5 874 , Breakdown Voltage vs. Temperature (IF=0mA) 950 900 850 800 -40 -20 0 20 40 60
CP Clare
Original
DS-CPC1998-R01 J-STD-033 RL1201

lm5203

Abstract: switching 800 µA 4.5 SHUTDOWN CONTROL (VSD pin) IVSD OFF Off state leakage current 0.1 , TEMPERATURE (CS) Figure 3. VRST vs. Temperature 125 C004 Figure 4. ICCST vs. Temperature 800 , (Vout + Vf ) · n ú + tdly è ø ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH , ¸ ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + 0.7V) · 6 ú , LL = · Lp · ç ÷ · Freq _ LL · h 2 è Rsense ø 2 1 æ 0.5 ö Pout _ LL = · 400mH · Ã
Texas Instruments
Original
lm5203 SNVS961D
Abstract: 340 420 µA ICCOP Operating supply current COMP = 2.25 V, OUT switching 800 µA , . Temperature 125 C004 Figure 4. ICCST vs. Temperature 800 132 790 131 780 130 FMAX , ÷ · 400mH · êç 127V ÷ + (19V + 0.7V) · 6 ú + 580ns è ø ø ëè û = 49.6kHz 1 , ¨ ø ø ëè û 1 éæ 1 ö ù 1 æ 0.5V ö ç 0.15W ÷ · 400mH · êç 325V ÷ + (19V + , · 400mH · ç ÷ · 49.6kHz · 0.86 = 94.9W 2 è 0.15 ø 2 1 æ VCS ö Pout _ HL = gLpgà Texas Instruments
Original
SNVS961B
Abstract: 1.1 VP (at IL=2AP) Blocking Voltage 800 VP RθJC 0.35 ° C/W Features â'¢ â , Output ESD, Human Body Model Operational Temperature Storage Temperature 1 2 Min - Max 800 , Inductive Load (VL=200V, ZL=400mH/220â"¦, TA=25ºC) 5.15 5.10 5.05 5.00 4.95 4.90 0 100 , 100 886 LED Forward Current to Operate vs. Temperature - Inductive Load (IL=500mA, fL=60Hz, LL=400mH , =0mA) 950 900 850 800 -40 -20 0 20 40 60 Temperature (ºC) 80 100 Maximum CP Clare
Original
Abstract: =2AP) Blocking Voltage 800 VP RJC 0.35 °C/W Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â , Temperature (TJ) Operational Temperature Storage Temperature 1 2 Min - Max 800 5 50 1 150 4.4 , Activate, Inductive (IL=500mA, 60Hz, 400mH) 7.0 6.5 6.0 5.5 5.0 4.5 4.0 -40 -20 0 20 , =400V 10 1 0.1 0.01 0.001 800 -40 1.0 100 Off-State Leakage Current vs. Temperature , (VL=200V, ZL=400mH/220Ω) LED Forward Current (mA) 5.20 LED Forward Current (mA) LED Forward CP Clare
Original
DS-CPC40055ST-R01

nc4ebd-jpl2-dc12v

Abstract: NC2D-JPL2-DC48V 144mA 120mA 60mA 30mA 15mA 7.4mA 34.7 50 200 800 3,200 13,500 720mW 720mW 720mW 720mW , ,480mH 17,400mH Max. allowable voltage (at 50°C 122°F)* 12V DC 24V DC 48V DC 80%V or less , 800mW 2,370mH 2,730mH 800mW 800mW 10,800mH 12,400mH 1,600mW 1,600mW 5.25mH 6.03mH N.C , 3.92mH 4.87mH 17.0mH 78.1mH 302mH 1,400mH Set coil Reset coil Set coil Reset coil , 4 3 2 2.54 0.5 .100 .020 25.4 1.000 5.08 .200 10.16 .400 20.32 .800 14.8 .583
Panasonic
Original
nc4ebd-jpl2-dc12v NC2D-JPL2-DC48V NC2D-JPL2-DC24V 384MH nc2d-jp-dc24v NC2D-JP-DC48V
Abstract: SHANNON ROAD · TUCSON, ARIZONA 85741 · USA · APPLICATIONS HOTLINE: 1 (800) 546-2739 PA51 · PA51A , INDUCTIVE LOAD ILIM = 5A 11mH 20mH 35mH 50mH 400mH * ILIM = 10A 4.3mH 5.0mH 6.2mH 15mH 20mH 100mH , SHANNON ROAD · TUCSON, ARIZONA 85741 ·orUSA · APPLICATIONS 1change (800) 546-2739 N T These Apex Microtechnology
Original
PA51U
Abstract: PA51 · PA51A ·EX M I C R O T E C H N O L O G Y C O R P O R A T I O N · APP LIC AT IO N S HOTLINE 800 546 APEX ( 8 0 0 - 5 4 6 - 2 7 39) FEATURES · · · · · WIDE SUPPLY RANGE - ± 1 0 to ±40V HIGH , T IO N 5980 NORTH SHANNON ROAD · TUCSON. ARIZO NA 85741 · USA · APPLICATION S HOTLINE: 1 (800 , 15V * U =5A U = 1°A U = 5A 11mH 20mH 35mH 50mH 400mH u m= 1 °A 1 4.3mH 5.0mH 6.2mH , . 400|xF 800|xF 1,600nF 5.0mF 10mF 20mF 200|iF 400|iF 800nF 2.5mF 5.0mF 10mF * If the -
OCR Scan
OPA501

Matsushita nc2d ac100v

Abstract: NC2D-JPL2-DC48V 144mA 120mA 60mA 30mA 15mA 7.4mA 34.7 50 200 800 3,200 13,500 720mW 720mW 720mW 720mW , ,480mH 17,400mH Max. allowable voltage (at 50°C 122°F)* 12V DC 24V DC 48V DC 80%V or less , 800mW 2,370mH 2,730mH 800mW 800mW 10,800mH 12,400mH 1,600mW 1,600mW 5.25mH 6.03mH N.C , 3.92mH 4.87mH 17.0mH 78.1mH 302mH 1,400mH Set coil Reset coil Set coil Reset coil , 4 3 2 2.54 0.5 .100 .020 25.4 1.000 5.08 .200 10.16 .400 20.32 .800 14.8 .583
Matsushita Electric Works
Original
Matsushita nc2d ac100v Matsua relay nt NC2D-JP-DC12V NC2-PS
Abstract: · APPLICATIONS HOTLINE: 1 (800) 546-2739 PA51 · PA51A TYPICAL PERFORMANCE GRAPHS , 15mH 400mH 20mH * 100mH GENERAL Please read Application Note 1 "General Operating Considerations , SHANNON ROAD · TUCSON, ARIZONA 85741 ·orUSA · APPLICATIONS 1change (800) 546-2739 These simplified Apex Microtechnology
Original
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