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780nm

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Abstract: E, F A+BC+D - A+CB+D - A+DB+C - E-F AD Po=10W, =780nm E, F Po=10 W, =780nm AD Po=100W, =780nm E, F Po=100 W, =780nm AD Po=10W, =780nm 100kHz, -3dB E, F Po=10W, =780nm , Po=10W, =780nm E, F Po=10W, =780nm AD Po=100W, =780nm E, F Po=100W, =780nm AD Po=10W, =780nm 100kHz, -3dB E,F Po=10W,=780nm 10kHz, -3dB 2-1 AF C V 2-2 2-3 GND 2-4 -
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MM1729XB CD/MM1729XB CMP-10C 25VCC
Abstract: 2 650nm 780nm W 3 - P3 P3 2 P4 650nm 780nm 650nm 650nm780nm L D 780nm 2LD LD PD 650nm 650nm 780nm 780nm LD PD eye URL http , 2 650nm 780nm W 3 - P3 P3 2 P4 650nm 780nm 650nm 650nm780nm L D 780nm 2LD LD Toshiba
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650-nm 650NM 780nm laser diode TAR5SSOT-23 TAR8H8US82
Abstract: =780nm, 1.8 1.0 1.16 0.5 0.3 (0.26) (0.6) 1.0 0.3 500MHz at =650nm). It , at =780nm 500MHz at =650nm · Miniature, thin type 1.8mmX3.6mmX1.16mm anode (2x)R0 , SYMBOL ID VF Ct P S fc TEST CONDITION VR=10V IF=1mA VR=2.0V, f=1MHz - VR=2.0V, =780nm VR=2.0V, =650nm VR=2.0V, =780nm, RL=50, -3dB VR=2.0V, =650nm, RL=50, -3dB MIN - - - - , =2.0V, =780nm 80 1.00E-04 Relative Sensitivity (%) Light Current() 70 1.00E-05 1.00E-06 60 New Japan Radio
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NJL6167R-1 450MH 500MH
Abstract: dark ­1 0 1 mV/°C Output voltage (A to D) * Vo = 650nm, 780nm, Po = 10uW 7.5 10.0 12.5 mV/uW Output voltage (E+I to H+L) * Vo = 650nm, 780nm, Po = 10uW 30.15 40.20 50.25 mV/uW Output voltage (WPP1, WPP2) * Vo = 650nm, 780nm, Po = 10uW 1.25 1.67 2.09 Output voltage (RF+) * Vo = 650nm, 780nm, Po = 10uW 6.71 8.95 11.19 mV/uW Output voltage (RF­) * Vo = 650nm, 780nm, Po = 10uW ­11.19 ­8.95 ­6.71 mV/uW Sony
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CXA2726GA 18PIN EIAJ ED-4701-1 C-111A 650NM photodetector EIAJ ED-4701-1 650NM photodiode 120MH PE05717-PS LFLGA-18P-391
Abstract: A~D Po=10uW, =780nm 29.0 37.0 45.0 mV/uW Output voltage (note 1-2, 4) VO E, F Po=10uW, =780nm 61.0 77.0 93.0 mV/uW A~D Po=100uW, =780nm 3.9 4.1 V Maximum output voltage VOmax. (note 1-3, 4) E, F Po=100uW, =780nm 4.5 4.9 V A~D Po=10uW, =780nm 6.0 8.0 MHz Frequency characteristics 100kHz reference, -3dB fc (note 1-4) E, F Po=10uW, =780nm 0.5 2.0 MHz 10kHz reference, -3dB note1-1 : Measure output offset , dark condition -10 0 10 mV A~D Po=10uW, =780nm 29.0 37.0 45.0 mV/uW Output voltage (note 2-2, 4) VO E Mitsumi
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af200
Abstract: mV E - F In dark condition -10 0 10 mV A~D Po=10uW, =780nm 29.0 37.0 45.0 mV/uW Output voltage (note 1-2, 4) VO E, F Po=10uW, =780nm 61.0 77.0 93.0 mV/uW Maximum output voltage A~D Po=100uW, =780nm 3.9 4.1 V VOmax. (note 1-3, 4) E, F Po=100uW, =780nm 4.5 4.9 V A~D Po=10uW, =780nm 6.0 8.0 MHz Frequency characteristics 100kHz reference, -3dB fc (note 1-4) E, F Po=10uW, =780nm 0.5 , condition -10 0 10 mV E - F In dark condition -10 0 10 mV A~D Po=10uW, =780nm 29.0 37.0 45.0 mV Mitsumi
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photodiode with voltage output cd photo detector optical pickup optical pickup unit Photodiode and amplifier IC for CD
Abstract: ID VF Ct P S fC VR=10V IF =1mA VR=2.0V, f=1MHz VR=2.0V, =780nm () VR=2.0V, =780nm, RL=50, -3dB 0.50 0.1 4 800 0.65 300 2.0 1.0 , VR=2.0V, =780nm 80 1.00E-04 Relative Sensitivity (%) Light Current() 70 1.00E-05 , 1.00E-08 105% 104% VR=2.0V, =780nm VR=2.0V, =780nm 1.00E-09 103% Relative Sensitivity (% , 0 20 -Ta=25 80 100 5 =780nm, RL=50 =780nm, RL=50 4 3 3 Fall Timetr New Japan Radio
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NJL6165R NJL6165R-1 6165R-1 NJL6165R/6165R-1 300MH 00E-03 00E-05
Abstract: AF 1-1 RF 1-2 A+BC+D - A+CB+D - A+DB+C - E-F AD Po=10 =780nm W, E, F Po=10W, =780nm RF Po=10W, =780nm AD, RF Po=100W, =780nm E, F Po=100W, =780nm AD, RF Po=10W, =780nm 100kHz -3dB E, F Po=10W, =780nm 100kHz -3dB AD, RF f=112MHz AD f=12MHz BW=30kHz RF f=12MHz BW -
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MM1730XB CMP-12A SW05V DVD/CDI/VMM1730XB 127MH SW50V
Abstract: 10 mV E - F In dark condition -10 0 10 mV A~D Po=10uW, =780nm 29.0 37.0 45.0 mV/uW Output voltage (note 1-2, 4) VO E, F Po=10uW, =780nm 61.0 77.0 93.0 mV/uW Maximum output voltage A~D Po=100uW, =780nm 3.9 4.1 V VOmax. (note 1-3, 4) E, F Po=100uW, =780nm 4.5 4.9 V A~D Po=10uW, =780nm 6.0 8.0 MHz Frequency characteristics 100kHz reference, -3dB fc (note 1-4) E, F Po=10uW, =780nm 0.5 2.0 MHz 10kHz , A~D Po=10uW, =780nm 29.0 37.0 45.0 mV/uW Output voltage (note 2-2, 4) VO E, F Po=10uW, =780nm 61.0 Mitsumi
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Abstract: '¢ Corresponding to three wavelength (=405nm/650nm/780nm) â'¢ Short rise-time, fall-time 2ns typ. (=405nm/650nm/780nm, VR=2.5V, 10-90%) â'¢ High speed 200MHz ( =780nm) 220MHz ( =650nm) 250MHz ( ï , .June.2014 Rev.4.2 TEST CONDITION VR=10V IF=1mA VR=2.5V, f=1MHz â'" VR=2.5V, =780nm VR=2.5V, =650nm VR=2.5V, =405nm VR=2.5V, =780nm, 10-90%, 1mW VR=2.5V, =650nm, 10-90%, 1mW VR=2.5V, =405nm, 10-90%, 1mW VR=2.5V, =780nm, RL=50ï'¬ï' -3dB VR=2.5V, =650nm, RL=50ï'¬ï' -3dB VR=2.5V, ï New Japan Radio
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NJL6402R-2 200MH 220MH 250MH
Abstract: 1.0 mV/°C Output voltage (A to D) VO = 780nm, Po = 10uW 82 110 138 mV Output voltage (E to H) VO = 780nm, Po = 10uW 338 450 563 mV Output voltage (RF) Vo = 780nm, Po = 10uW 165 220 275 mV Maximum output voltage (A to H, RF) VO = 780nm, Po = 500uW 3.9 4.0 - V Frequency response 1 (A to D) fc = 780nm Po = , = 780nm Po = 10uWDC, 4uWp-p 100kHz reference, ­3dB 12 20 - MHz Frequency response Sony
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CXA2598M PDIC "12 pin" cd-r I-V amplifier sony pdic 100MH PD-S-12 E00342-PS
Abstract: NJL6167R-1 mm NJL6167R-1 450MHz ( NJL6167R-1 =780nm)500MHz (=650nm)PIN 1.2×0.4mm , 0.3 1.8 0.95 COBP(Chip on Board Package) 450MHz (=780nm) 500MHz (=650nm , Ct P S fC VR=10V IF =1mA VR=2.0V, f=1MHz VR=2.0V, =780nm VR=2.0V, =650nm VR=2.0V, =780nm, RL=50, -3dB VR=2.0V, =650nm, RL=50, -3dB 0.38 0.32 0.1 4 , NJL6167R-1 -Ta=25 Ta=25 100 1.00E-03 90 VR=2.0V, =780nm 80 1.00E-04 Relative New Japan Radio
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Vr-20V VR20V 00E-06 00E-07 00E-08 00E-09 00E-10 00E-11
Abstract: =1MHz VR=2.0V, =780nm () VR=2.0V, =780nm, RL=50, -3dB 0.50 0.1 10 , Ta=25 100 1.00E-02 90 VR=2V, =780nm 1.00E-03 80 70 Relative Sensitivity (% , 900 1000 1100 Wavelength (nm) - - 105% 104% VR=2V, =780nm VR=2V, =780nm , % -40 100 -20 0 Ambient Temperature Ta( ) -Ta=25 60 80 100 20 =780nm, RL=50 =780nm, RL=50 15 Fall Timetr (ns) 15 Rise Timetr (ns) 40 -Ta=25 20 10 10 5 New Japan Radio
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NJL6163R-1 00E-02 00E-12 00E-13
Abstract: transfer molded package with bend pins Sensitivity MIN 0.4A/W fA=780nm \ \ Application: A,B/ Dark current MAX 0.2nA /V r= 1 5 V \ I Application: Bj TYP 780nm Outline Peak sensitivity dimensions w avelength , with flat pins MIN 0.45A/W /A =780nm \ I Application: A,B/ MAX 0.2nA /V b=15V \ lApplication: BI TYP 780nm Fig. 117-3 PD666PS · For 3 beams (6-partition photodiode) · High sensitivity · Transparent transfer molded package with flat pins MIN 0.45A/W /A=780nm \ \ Application: A,B/ MAX 0.2nA -
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PD142PI photodetector PD168PI PD663PI PD666P PD663PS D0374T
Abstract: =2.0V, f=1MHz - VR=2.0V, =780nm VR=0.7V, =780nm, RL=50 VR=2.0V, =780nm, RL=50 MIN - - - , vs. Illuminance (Ta=25°C) Spectral Response (Ta=25°C) 1.00E-02 100% VR=2.0V, =780nm 80 , 110% 1.0E-08 108% VR=2.0V VR=2.0V, =780nm 106% Relative Sensitivity (%) 1.0E-09 , =25°C) 40 60 80 100 Fall Time vs. Reverse Voltage (Ta=25°C) 20 20 =780nm, RL=50 =780nm , ) 0 -2 -3 -4 VR=2.0V, =780nm, RL=50 -5 13 12 11 10 9 8 -6 1 10 100 0 New Japan Radio
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NJL6163R
Abstract: =1MHz â'" VR=2.0V, λ=780nm (note) VR=2.0V, λ=780nm, RL=50â"¦, -3dB MIN â'" â'" â'" â'" 0.50 , =25°C) 100 1.00E-02 90 VR=2V, =780nm 1.00E-03 80 70 Relative Sensitivity (%) Light Current , % 104% VR=2V, =780nm VR=2V, λ=780nm 1.00E-09 103% Relative Sens itivity (%) Dark , 20 40 60 Ambient Temperature Ta( Rise Time vs. Reverse Voltage (Ta=25°C) 20 =780nm, RL=50 =780nm, RL=50 15 15 Fall Time tr (ns ) Rise Tim e tr (ns) 100 ) Fall New Japan Radio
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Abstract: =30V I=1mA V=2.0V, f=1MHz V=2.0V, =780nm V=0.7V, =780nm, RL=50 V=2.0V, =780nm, RL , nm A/W MHz MHz -1- NJL6163R -Ta=25 1.00E-02 Ta=25 100% VR=2.0V, =780nm 80 , - 110% 1.0E-08 V=2.0V, =780nm 108% VR=2.0V 106% 1.0E-09 (%) ID (A) 104 , 80 100 90% -40 -20 Ta ( -Ta=25 40 60 80 100 -Ta=25 =780nm, RL=50 tf (ns) =780nm, RL=50 tr (ns) 20 20 20 15 10 5 15 10 5 0 0 0 -2- 0 New Japan Radio
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0E-08 0E-09 0E-10 0E-11 0E-12 0E-13
Abstract: , =780nm 32.5 43.0 53.5 mV/ÂuW VO (note 1-2, 4) E, F Po=10ÂuW, =780nm 69.0 92.0 115.0 mV/ÂuW Maximum output voltage A~D Po=100ÂuW, =780nm 3.9 4.1 V VOmax (note 1-3, 4) E, F Po=100ÂuW, =780nm 4.5 4.9 V A~D Po=10ÂuW, =780nm 4.0 6.0 MHz Frequency characteristics 100kHz reference, -3dB fc (note 1-4) E, F Po=10ÂuW, =780nm 0.1 0.4 MHz 10kHz reference, -3dB note1-1 : Measure output Mitsumi
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MM1746XB
Abstract: AD E, F A+BC+D - A+CB+D - A+DB+C - E-F AD Po10W, 780nm E, F Po10W, 780nm AD Po100W, 780nm E, F Po100W, 780nm AD Po10W, 780nm 100kHz -3dB E, F Po10W, 780nm 10kHz/10kHz -
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AD 690 12mV mitsumi mitsumi m CD/MM1746XB 40VCC-1
Abstract: -4, 5 =780nm 25.5 34.0 VoT E, F Po=10uW, =780nm 67.0 89.0 111.0 mV/uW VoRF Output voltage note1-3, 5 A~D Po=10uW, RF Po=10uW, =780nm 45.0 59.5 74.0 mV/uW 2.3 , note1-5 fc =780nm =780nm =780nm 100kHz reference, -3dB E, F Po=10uW, =780nm 100kHz Mitsumi
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Detector DVD player circuit diagram Detector "Detector IC" CD DVD 10 PIN dvd circuit diagram dvd optical pickup OPTICAL PICK-UP MM1779 MM1779AB MM1779BB CMP-12C
Abstract: Circuit current Icc In the dark 6.8 9.0 11.2 mA Output voltage Vo Po=10yW A =780nm Output A to D 176 232 292 mV Po=10|jW A =780nm Output EtoF 303 412 534 mV Output voltage ratio 1 VoeA/oa The ratio of , dark E-F -15 0 +15 Frequency characteristic fc Po=10pW A =780nm 3dB down Output A to D 50 65 - MHz Po=10(jW A =780nm 3dB down Output RF 50 65 - Po=10pW A =780nm 3dB down OutDUt EtoF 1.0 3.5 - Group delay characteristic GDR Po=10mW A =780nm Output A to D (f=1 to 30MHzi - 2 4 nS Po=10pW A -
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M61083FP bbl 10pin 10kMn DC-65MH 10C2F
Abstract: NJL6167R-1 are the high speed PIN NJL6167R-1 Active area: 1.2X0.4mm photo diode (fc : 450MHz at λ=780nm , 0.3 1.8 volume compared with lead frame type. 0.95 FEATURES â'¢ High speed 450MHz at λ=780nm , SYMBOL ID VF Ct λP S fc TEST CONDITION VR=10V IF=1mA VR=2.0V, f=1MHz â'" VR=2.0V, λ=780nm VR=2.0V, λ=650nm VR=2.0V, λ=780nm, RL=50â"¦, -3dB VR=2.0V, λ=650nm, RL=50â"¦, -3dB MIN â , =25°C) 1.00E-03 100 90 VR=2.0V, =780nm 80 1.00E-04 Relative Sensitivity (%) Light Current New Japan Radio
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Abstract: 11.2 mA Vo In the dark Po=10uW =780nm Output A to D 176 232 292 mV Po=10uW =780nm Output E to F 303 412 534 mV Output voltage ratio 1 VOE/VOA A to D 1.51 , dark E-F -15 0 +15 Po=10uW =780nm 3dB down Output A to D 50 65 ­ Po=10uW =780nm 3dB down Output 50 65 ­ 1.0 3.5 ­ Po=10uW =780nm Output A to D (f=1 to , =10uW =780nm 3dB down Output E to F Group delay characteristic Output noise voltage G DR =780nm Hamamatsu Photonics
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Laser 405 nm violet laser diode Laser Diode 405 nm Laser Pick-Up 405 nm S9868 D-82211 SE-171 KPIN1074E01
Abstract: AF 1-1 RF 1-2 A+BC+D - A+CB+D - A+DB+C - E-F AD Po=10 =780nm W, E, F Po=10W, =780nm RF Po=10W, =780nm AD, RF Po=100W, =780nm E, F Po=100W, =780nm AD, RF Po=10W, =780nm 100kHz -3dB E, F Po=10W, =780nm 100kHz -3dB AD, RF f=112MHz AD f=12MHz BW=30kHz RF f=12MHz BW Mitsubishi
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Abstract: =1MHz VR=2.0V, =780nm () VR=2.0V, =780nm, RL=50, -3dB 0.50 0.1 10 , Ta=25 100 1.00E-02 90 VR=2V, =780nm 1.00E-03 80 70 Relative Sensitivity (% , 900 1000 1100 Wavelength (nm) - - 105% 104% VR=2V, =780nm VR=2V, =780nm , % -40 100 -20 0 Ambient Temperature Ta( ) -Ta=25 60 80 100 20 =780nm, RL=50 =780nm, RL=50 15 Fall Timetr (ns) 15 Rise Timetr (ns) 40 -Ta=25 20 10 10 5 -
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CXA1753M CXA1610M CXA161OM sony cxa1610m cxa1610 sony cxa 1753m sony pickup detector E93537-HP
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