NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPICE PARAMETER EM6K1 by ROHM TR Div. * MEM6K1 NMOS model * Date: 2006/09/07 .MODEL MEM6K1 NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
nmos transistors nmos transistor RS Components 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 0000E-6 abstract |
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| Abstract: SPICE PARAMETER 2SK3019 2SK3019 by ROHM TR Div. * M2SK3019 M2SK3019 NMOS model * Date: 2006/09/07 .MODEL M2SK3019 M2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
2SK301 4405 2SK3019 M2SK3019 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 2SK3019 abstract |
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| Abstract: SPICE PARAMETER UM5K1N by ROHM TR Div. * MUM5K1N NMOS model * Date: 2006/09/07 .MODEL MUM5K1N NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
NMOS 74958 4405 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 0000E-6 abstract |
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| Abstract: SPICE PARAMETER 2SK3541 2SK3541 by ROHM TR Div. * M2SK3541 M2SK3541 NMOS model * Date: 2006/09/07 .MODEL M2SK3541 M2SK3541 NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
nmos transistor rb transistor 8467 transistor 74958 2SK354 2SK3541 4405 M2SK3541 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3541 abstract |
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| Abstract: SPICE PARAMETER 2SK3018 2SK3018 by ROHM TR Div. * M2SK3018 M2SK3018 NMOS model * Date: 2006/09/07 .MODEL M2SK3018 M2SK3018 NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
M2SK3018 7495 nmos transistor NMOS 74958 2SK301 2SK3018 8467 transistor 4405 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3018 abstract |
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| Abstract: SPICE PARAMETER UM6K1N by ROHM TR Div. * MUM6K1N NMOS model * Date: 2006/09/07 .MODEL MUM6K1N NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=.27 + KP=1.0298E-6 0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 8571E9 + TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + IS=288.79E-18 79E-18 + N=.8467 + RB=.31521 + GAMMA=0 + KAPPA=0 ... | Original |
1 pages, |
UM6K1N NMOS nmos transistor 4405 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 0000E-6 abstract |
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| Abstract: Number: 74958 S09-2275-Rev. B, 02-Nov-09 1.2b, c 1.9 TC = 70 °C W 1.2 TA = 25 °C 1.3b , 15 Document Number: 74958 S09-2275-Rev. B, 02-Nov-09 Si3879DV Si3879DV Vishay Siliconix , rating conditions for extended periods may affect device reliability. Document Number: 74958 , Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74958 S09-2275-Rev. B , specified Safe Operating Area, Junction-to-Case Document Number: 74958 S09-2275-Rev. B, 02-Nov-09 ... | Original |
10 pages, |
Si3879DV-T1-GE3 Si3879DV-T1-E3 SI3879DV Si3879DV Si3879DV abstract |
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| Abstract: , c TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) PD Document Number: 74958 , 15 Document Number: 74958 S-71290 S-71290Rev. A, 02-Jul-07 New Product Si3879DV Si3879DV Vishay Siliconix , : 74958 S-71290 S-71290Rev. A, 02-Jul-07 www.vishay.com 3 New Product Si3879DV Si3879DV Vishay Siliconix , Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74958 S-71290 S-71290Rev. A , specified Safe Operating Area, Junction-to-Case Document Number: 74958 S-71290 S-71290Rev. A, 02-Jul-07 ... | Original |
10 pages, |
Si3879DV-T1-E3 S-71290 Si3879DV Si3879DV abstract |
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| Abstract: , c TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) PD Document Number: 74958 , 15 Document Number: 74958 S-71290 S-71290Rev. A, 02-Jul-07 New Product Si3879DV Si3879DV Vishay Siliconix , : 74958 S-71290 S-71290Rev. A, 02-Jul-07 www.vishay.com 3 New Product Si3879DV Si3879DV Vishay Siliconix , Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74958 S-71290 S-71290Rev. A , specified Safe Operating Area, Junction-to-Case Document Number: 74958 S-71290 S-71290Rev. A, 02-Jul-07 ... | Original |
10 pages, |
Si3879DV-T1-E3 Si3879DV Si3879DV abstract |
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| Abstract: TOX=2.0000E-6 0000E-6 + CGSO=37.037E-15 037E-15 + CGDO=35.457E-12 457E-12 + CBD=18.868E-12 868E-12 + MJ=.74958 + RG=3.9831E3 9831E3 + ... | Original |
1 pages, |
nmos transistor 4405 00E-15 07E-15 128E-12 019E-12 44E-12 3199E-9 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 00E-15 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .8 .93581 -47.5 1.200 .74958 -93.6 .9872 39.3 .00272 9.8 .92574 -56.8 1.400 .71980 -105 www.datasheetarchive.com/files/siemens/ehdata/spar/bf996s/m6053508.s2p |
Siemens | 02/07/1993 | 1.66 Kb | S2P | m6053508.s2p |
| .8 .93581 -47.5 1.200 .74958 -93.6 .9872 39.3 .00272 9.8 .92574 -56.8 1.400 .71980 -105 www.datasheetarchive.com/files/siemens/ehdata/spar/bf995/m6053508.s2p |
Siemens | 10/01/1993 | 1.66 Kb | S2P | m6053508.s2p |
| .77 3000 0.35141 172.91 3.98468 72.212 0.056782 74.958 0.46355 -41.94 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/philips/sparam/115bf10.001 |
Spice Models | 29/07/2012 | 1.71 Kb | 001 | 115bf10.001 |
| .3699, , nr=1.15078,var=3.37589,ikr=3.44385,isc=4.75e-13 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd32t4.sin |
On Semiconductor | 30/03/2009 | 1.12 Kb | SIN | mjd32t4.sin |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL mjd32t4 pnp +IS=8.3472e-11 BF=100.261 NF=1.26327 VAF=29.3699 +IKF=6.07043 ISE=7.74958e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd32t4.sp3 |
On Semiconductor | 30/03/2009 | 0.96 Kb | SP3 | mjd32t4.sp3 |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Qmjd32t4 pnp +IS=8.3472e-11 BF=100.261 NF=1.26327 VAF=29.3699 +IKF=6.07043 ISE=7.74958e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd32t4.lib |
On Semiconductor | 30/03/2009 | 0.96 Kb | LIB | mjd32t4.lib |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Qmjd32t4 pnp +IS=8.3472e-11 BF=100.261 NF=1.26327 VAF=29.3699 +IKF=6.07043 ISE=7.74958e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd32t4.sp2 |
On Semiconductor | 30/03/2009 | 0.96 Kb | SP2 | mjd32t4.sp2 |
| .188 85.081 0.427 139.127 2.450 0.758 107.964 1.481 74.958 0.185 85 www.datasheetarchive.com/download/86792540-772113ZC/powerv10.zip (NESG260234_v1p1-3_6_200.s2p) |
Spice Models | 29/07/2012 | 181.36 Kb | ZIP | powerv10.zip |
| .188 85.081 0.427 139.127 2.450 0.758 107.964 1.481 74.958 0.185 85 www.datasheetarchive.com/download/92769903-772114ZC/sigehbtv09.zip (NESG260234_v1p1-3_6_200.s2p) |
Spice Models | 29/07/2012 | 2357.04 Kb | ZIP | sigehbtv09.zip |
| .013170 74.261 0.87433 -16.38 700 0.50225 -49.35 17.74958 135.19 0.014553 73.516 0.85018 -18.11 800 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/philips/sparam/313bf10.001 |
Spice Models | 29/07/2012 | 1.71 Kb | 001 | 313bf10.001 |