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WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey Buy

745+diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=7A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300Âus, Duty , controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Unisonic Technologies
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8N50H

Abstract: TF 745-A =0~10V (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=7A, VGS=0V Notes: 1. Pulse Test: Pulse width , Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt
Unisonic Technologies
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Abstract: ID[Cont.] @ 25°C 85 RG = 0.6W 12 Rise Time Fall Time SOURCE-DRAIN DIODE RATINGS , Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = Advanced Power Technology
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IL-74

Abstract: .] @ 25°C 85 RG = 0.6 12 Rise Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ISM VSD Characteristic / Test Conditions MIN Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont
Advanced Power Technology
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86.10.0.024.0000

Abstract: 95.85.3 ): ® C US 99.02 coil indication and EMC suppression modules (see technical data page 209) Diode , 99.02.0.060.59 LED (110.240)V DC/AC 99.02.0.230.59 LED + Diode* (+A1, standard polarity) (6.24)V DC 99.02.9.024.99 LED + Diode* (+A1, standard polarity) (28.60)V DC 99.02.9.060.99 LED + Diode* (+A1, standard polarity) (110.220)V DC 99.02.9.220.99 LED + Varistor , indication and EMC suppression modules (see technical data page 209) Diode* (+A1, standard polarity
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Abstract: BAS17 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r lew voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection. Q UICK REFERENCE D ATA Repetitive peak forward current >FRM Tstg , 10 mA Vf 750 to 830 mV Ip = 100 mA Vf 870 to 960 mV Diode capacitance V R = 0; f = , . Diode capacitance V R = 0; f = 1 MHz < * Mounted on a ceramic substrate o f 7 mm x 5 mm x 0,5 mm -
OCR Scan

745 diode

Abstract: IR5F b m bbsa^i ogeLiSüe ttt hapx N AUER PH IL IPS/DISCRETE_J BAS17 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection. QUICK REFERENCE , 745 mV lF= 10 mA Vf 750 to 830 mV lF = 100 mA Vf 870 to 960 mV Diode capacitance VR = 0;f= 1 MHz Cd , coefficient fF = 1 mA SF typ. -1,8 mV/ Diode capacitance VR =0; f = 1 MHz Cd < 140 pf * Mounted on a
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OCR Scan
745 diode IR5F mv diode diode 745 Temperature Stabilizer diode to805 S3T31

diode 745

Abstract: (off) tf R q = 0.6w SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's 'sM V SD Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current © (Body Diode) i \ MIN TYP MAX 7 4.5 UNIT Amps 2 98 1.3 880 31 Volts ns hc Diode Forward
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OCR Scan
APT50M50PVR IL-STD-750

mt relay

Abstract: MTMF0W00 L0 730 MTM G0 730 Protection diode 1N4007 RC-network 6.24 Vac RC-network 110.230 Vac
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S0309-AA mt relay MTMF0W00 11 pin relay Socket 7-1393163-6 mt2 relay F0235-A F0103-A S0311-BA S0414-AB S0311-BB S0414-AA

Philips MARKING CODE a91

Abstract: S1RB D bbS3T31 â¡â¡Eb2DE TTT H A P X BAS17 N AMER PHIL IPS/DISCRETE_ J V LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter , to 830 mV 10 m A Ip = 100 mA 870 to 960 mV Diode capacitance N X II II , 10 mA Ip = 100 mA < < 33 II Reverse current Temperature coefficient Ip = 1 mA Diode
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OCR Scan
Philips MARKING CODE a91 S1RB

8-pin flasher relay

Abstract: diode 745 for MT 78 740, MT 78 745 Type MTM T0 0A0 MTM U0 524 MTM U0 730 Protection diode 1N4007 (A1+, A2
SCHRACK
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8-pin flasher relay mt marking MT78740 relays schrack schrack mt 78 755 SCHRACK MULTIMODE RELAY MT 2002/95/EC S0414-AC

mt relay

Abstract: S0309 0A0 MTM U0 524 MTM U0 730 LED MTM L0 024 MTM G0 024 MTM L0 730 MTM G0 730 Protection diode
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S0309-AC S0309 mt 740 relay L0730 MT78760 DIN50022 DIN-RAIL F0107-A S0309-AB F0104-A F0105-A F0106-A

SCHRACK MULTIMODE RELAY MT

Abstract: MTMF0W00 modules for MT 78 740, MT 78 745 Type MTM T0 0A0 MTM U0 524 MTM U0 730 Protection diode 1N4007 (A1
SCHRACK
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MT28800 1415044-1 MT RELAYS MT78750 F0235-B F0103-B

mt relay

Abstract: MT78750 Type MTM T0 0A0 MTM U0 524 MTM U0 730 Protection diode 1N4007 (A1+, A2-) RC-network 6.24 VAC
SCHRACK
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marking CODE W00

mt relay

Abstract: s0309 0A0 MTM U0 524 MTM U0 730 LED MTM L0 024 MTM G0 024 MTM L0 730 MTM G0 730 Protection diode
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STK 4070 s0311 50024 11-Pole undecal S0309-AD MT78602 MT78613

1N4007 definitions

Abstract: MT78740 Type MTM T0 0A0 MTM U0 730 Protection diode 1N4007 (A1+, A2-) RC-network 110.230 VAC Part
SCHRACK
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1N4007 definitions 11PIN Diode 1N4007 F0204-B

mt relay

Abstract: SCHRACK MULTIMODE RELAY MT modules for MT 78 740, MT 78 745 Type MTM T0 0A0 MTM U0 524 MTM U0 730 Protection diode 1N4007 (A1
SCHRACK
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Schrack F0203-B F0204 1N400 Schrack MT 745N

3mm Led infrared 730nm

Abstract: RoHS compliant version. Descriptions EVERLIGHT'S Infrared Emitting Diode(PIR3D-06C/L415) is a high intensity diode , molded in a water clear plastic package. The device is spectrally matched with , diode "breakdown." If the voltage tries to rise above Vz current flows through the zener branch to keep , parallel with zener diode. if either piece of LED is no light up but current can flow through causing
EVERLIGHT
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3mm Led infrared 730nm DIR-0000604
Abstract: reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor , reflective object sensor consists of an infrared emitting diode and an NPN silicon photodarlington . OPB , Crosstalk is the photocurrent measured with current to the input diode & no reflecting surface 6 All , Iss B 10.4.03 ABSOLUTE MAXIMUM RATINGS (25oC unless otherwise noted) INPUT DIODE FORWARD DC , TEST CONDISTIONS INPUT DIODE Forward Voltage VF 1.70 V If = 40mA Reverse Current Bedford Opto Technology
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OPB740 OPB744 OPB740W OPB744W OPB743 OPB741

REFLECTIVE SENSOR OPB

Abstract: Sensor OPB reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor , 745 reflective object sensor consists of an infrared emitting diode and an NPN silicon , is the photocurrent measured with current to the input diode & no reflecting surface. 7 All , 2.3.01 ABSOLUTE MAXIMUM RATINGS (25oC unless otherwise noted) INPUT DIODE FORWARD DC CURRENT , TEST CONDIS TIONS INPUT DIODE Forward Voltage VF 1.70 V If = 40mA Reverse Current
Bedford Opto Technology
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K8700 K8701 K8708 K8710 K8711 K8709 REFLECTIVE SENSOR OPB Sensor OPB K8702
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