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70603 scr

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70603 scr

Abstract: transistor 70603 FIGURE 1. CMOS Switch Cross Section Showing Parasitic P-N Junctions Document Number: 70603 03-Aug -99 , + PMOS P P P-Well N-Substrate FIGURE 3. Two Parasitic Transistors Form an Intrinsic SCR on a CMOS structure www.vishay.com 2 Document Number: 70603 03-Aug -99 AN205 Vishay , If the combined gain of the two parasitic transistors shown in Figure 3 is more than 1, a real SCR , , latchproof. Document Number: 70603 03-Aug -99 A1 A2 GND +5 V DG408 10 kW EN V­ IN4148
Vishay Siliconix
Original
DG458 70603 scr transistor 70603 70603 IC/transistor 70603 EQUIVALENT OF ZENER DIODE IN4148 S/transistor 70603

70603 scr

Abstract: 70603 . CMOS Switch Cross Section Showing Parasitic P-N Junctions Document Number: 70603 06-Aug -03 , P P P-Well N-Substrate FIGURE 3. Two Parasitic Transistors Form an Intrinsic SCR on a CMOS structure www.vishay.com 2 Document Number: 70603 06-Aug -03 AN205 Vishay Siliconix , If the combined gain of the two parasitic transistors shown in Figure 3 is more than 1, a real SCR , , latchproof. Document Number: 70603 06-Aug -03 A1 A2 GND +5 V DG408 10 kW EN VIN4148
Vishay Siliconix
Original
IC/70603 scr diode pico-amp 1N4148 1N914 DG508A HI-508A

transistor 70603

Abstract: 70603 . These specifications are subject to change without notice. 706-03 12/97 29 1 2 3 4 5 6 7 8 , 706-03 12/97 SST Product Reliability Technical Paper TABLE 1 GENERAL QUALIFICATION REQUIREMENTS , problems. 5 706-03 12/97 9 10 11 12 13 14 15 16 SST Product Reliability Technical , Latch-Up Description: CMOS devices contain parasitic PNPN structures which may act as SCR's, given the , Duration: 1000 cycles. © 1998 Silicon Storage Technology, Inc. 6-32 706-03 12/97 SST Product
Silicon Storage Technology
Original
JESD-22 a103 636 transistor JESD A114 K/70603 scr CRACK DETECTION PATTERNS surface mount transistor A103 JESD22 A110 ISO-9001 MIL-STD-883 29EE010/29LE010/29VE010 29EE512/29LE512/29VE512 29EE020/29LE020/29VE020

transistor 70603

Abstract: 70603 scr #70603. Siliconix 1 AN205 if < 30 mA? i Leakage Rd ­ + VF S Rg D RL + Vg , N-Substrate Figure 3. Two Parasitic Transistors Form an Intrinsic SCR on a CMOS structure 2 Siliconix , transistors shown in Figure 3 is more than 1, a real SCR results. It can be triggered by a very small fault
Temic Semiconductors
Original
diode 1n4148 equivalent test diode in4148 MAX358