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6R199P mosfet

Catalog Datasheet MFG & Type PDF Document Tags

6R199P

Abstract: 6R199P mosfet Package IPW60R199CP PG-TO247-3 Ordering Code Marking SP000089802 6R199P Maximum , , repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ
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6R199P mosfet 6R199P+mosfet

6R199P

Abstract: 6R199P mosfet IPW60R199CP PG-TO247-3-1 Ordering Code Marking SP000089802 6R199P Maximum ratings, at T j , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot
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6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199 JESD22

6R199P mosfet

Abstract: IPL60R199CP MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOSTM CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V , which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely , Parameters Value 650 0.199 32 51 6.1 200 Package PG-VSON-4 Unit V nC A µJ A/µs Marking 6R199P Related Links , current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating temperature
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IPL60R199 TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r

6R199P mosfet

Abstract: Package PG-TO262 Ordering Code SP000103248 Marking 6R199P Maximum ratings, at T j=25 °C, unless , , repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS
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IPI60R199CP

6R199P mosfet

Abstract: 6R199P Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate
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6R199P TO220 IPP60R199CP PG-TO220 SP000084278

6R199P

Abstract: 6R199 PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate
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IPA60R199CP CoolMOS Power Transistor

6R199P

Abstract: 6R199 PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate
Infineon Technologies
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6R199

Abstract: 6R199P IPA60R199CP PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter , , V DD=50 V 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness
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6R199P

Abstract: IPA60R199CP topologies Type IPA60R199CP Package PG-TO220FP Ordering Code SP000094146 Marking 6R199P , , repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D
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6R199P

Abstract: 6R199 SMPS topologies Type IPA60R199CP Package PG-TO220 Marking 6R199P Maximum ratings, at T j , ) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I
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02TYP

6R199P

Abstract: smd transistor marking DF Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate
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smd transistor marking DF to-263-3 IPB60R199CP PG-TO263 SP000223256

6R199P

Abstract: 6R199 Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot
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IPB60R199 smd marking code cp SMD MARKING CODE 102

IPP60R199CP

Abstract: Package IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings , , repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ
Infineon Technologies
Original

6R199P

Abstract: 6R199 Marking PG-TO220-3-31 SP000094146 6R199P Maximum ratings, at T j=25 °C, unless otherwise , ) E AR I D=6.6 A, V DD=50 V 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv
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DF 331 TRANSISTOR 6R19 IPA60R199C

6R199P

Abstract: IPP60R199CP IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot
Infineon Technologies
Original
IPP60R199 ISS 99 diode

6r199p

Abstract: mosfet 6R199 IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot
Infineon Technologies
Original

6R199P

Abstract: 6R199P DATA SHEET IPW60R199CP PG-TO247-3-1 Ordering Code Marking SP000089802 6R199P Maximum ratings, at T j , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot
Infineon Technologies
Original

ISS 99 diode

Abstract: 6R199P PG-TO247-3-1 Ordering Code SP000089802 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise , ) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.480 V static
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marking code ff p SMD Transistor

Abstract: 6R199P Package PG-TO263 Ordering Code SP000223256 Marking 6R199P Maximum ratings, at T j=25 °C, unless , , repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS
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marking code ff p SMD Transistor

6R199

Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOSâ"¢ CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V , devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use , Package Marking IPL60R199CP PG-VSON-4 6R199P 1) J-STD20 and JESD22 Final Data Sheet 2 , Avalanche current, repetitive IAR - - 6.6 A MOSFET dv/dt ruggedness dv/dt - -
Infineon Technologies
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