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ISL97672AIRZ-T Intersil Corporation 6-Channel LED Driver with Ultra Low Dimming Capability; QFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL97672AIRZ-TK Intersil Corporation 6-Channel LED Driver with Ultra Low Dimming Capability; QFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL97672AIRZ Intersil Corporation 6-Channel LED Driver with Ultra Low Dimming Capability; QFN20; Temp Range: -40° to 85°C visit Intersil Buy
DAC5672AIPFB Texas Instruments Dual-Channel, 14-Bit, 275-MSPS Digital-to-Analog Converter (DAC) 48-TQFP -40 to 85 visit Texas Instruments Buy
DAC5672AIPFBRG4 Texas Instruments Dual-Channel, 14-Bit, 275-MSPS Digital-to-Analog Converter (DAC) 48-TQFP -40 to 85 visit Texas Instruments
DAC5672AIPFBG4 Texas Instruments Dual-Channel, 14-Bit, 275-MSPS Digital-to-Analog Converter (DAC) 48-TQFP -40 to 85 visit Texas Instruments

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672/A

Catalog Datasheet MFG & Type PDF Document Tags

V570

Abstract: DI01 EPSON PF838-02 SEDI 672 Dot Matrix High Duty LCD Driver â'¢ 68 Output â'¢ 1/64 to 1/300 in display duty â'¢ CMOS High Voltage Resistant Process â  OVERVIEW The SEDI 672 is a 68 output low-power , SEIKO EPSON CORPORATION This Material Copyrighted By Its Respective Manufacturer 1 EPSON SEDI 672 â , Manufacturer EPSON SEDI 672 â  ABSOLUTE MAXIMUM RATINGS (Vdd=OV) Parameter Symbol Rating Unit Supply , Material Copyrighted By Its Respective Manufacturer 3 EPSON SEDI 672 â  ELECTRICAL CHARACTERISTICS â
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SED1630 V570 DI01 SED1672F0A dotmatrix SED1606 SED1672 COM99

Thyratron

Abstract: thyratron tube 6 72 "A THYRATRON MERCURY-VAPOR TETRODE Supersedes Type 672 GENERAL DATA Electr ical: Heater , . 30, 1948 TUBE DEPARTMENT CE-6735R1 RADIO CORPORATION OF AMERICA, HASRISON N'W JERSEY 672-A THYRATRON OPERATIONAL RANGES OF CRITICAL GRID-N2I VOLTAGE type 672-a E.p=5.0 VOLTS GRID-NÃ" 2 (SHIELD , 92CM-6734TI TYPE 672-a Ef = 5.0 VOLTS GRID-NS2 (SHIELD) VOLTS = IO -40 -20 0 +20 DC GRID-N2 I VOLTS , Position.Vertical, Base Down Overall Length . 7-7/8" ± 1/4" Seated Length.7-1/8" Â
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Thyratron thyratron tube 92CS-6735RI 92CM-6929T CE-6734T1-6929T

UTT80P06

Abstract: © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-672.a UTT80P06 PARAMETER Drain-Source , QW-R502-672.a UTT80P06 Preliminary Power MOSFET UTC assumes no responsibility for equipment , . UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-672.a Unisonic Technologies , Power MOSFET The UTC UTT80P06 is a P-channel power MOSFET using UTC's advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
Unisonic Technologies
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UTT80P06L-TA3-T UTT80P06G-TA3-T QW-R502-672
Abstract: EPSON PF838-01 SEDI 672 Dot Matrix High Duty LCD Driver â'¢ 68 Output â'¢ 1/64 to 1/300 in display duty â'¢ CMOS High Voltage Resistant Process â  OVERVIEW The SED1672 is a 68 output low-power resistance common (row) driver which is suitable for driving a very high capacity dotmatrix LCD , . COM67 2 SEDI 672 â  ABSOLUTE MAXIMUM RATINGS (V dd=0V) Parameter Symbol Rating , /output pin capacitance 4 Cl/O YSCL, SHL, INH, FR D I0 1 , D I0 2 SEDI 672 â  DIFFERENT -
OCR Scan

2281 led driver

Abstract: LS037V7DW05 Advanced Super V, Advanced TFT-LCD 300 105.5 × 67.2 × 4.2 51 With resistive touch panel 105.5 × 67.2 × 3.1 36 450 CMOS 0.8 250 480 × RGB × 640 0.117 × 0.117 56.16 , TFT LCD MODULES â©New product â  LCD Modules Display size , ) Active area H×V (mm) Display colors LQ035Q3DG03 320 × RGB × 240 0.2205 × 0.2205 70.56 × 52.92 16.19 M 6-bit + 2-bit FRC â©LS037V7DW05 9.4 [3.7] Weight (g) (MAX
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LQ043T1DG28 2281 led driver led backlight LS037V7DW06 LQ043T1DG29 LQ057Q3DC03 LQ064V3DG06 LQ084V1DG4
Abstract: 0.25 -0.5 mm2(light gr.) 231-671 0.75 -1 mm2 (dark grey) 231 -672 A\WW^ Test plug, w. cable 500 , 0.75 -1 mm2(dark grey) 231 -672 © 0.2 mm2solid/0.14 mm2 f-st Marker strips, self-adhesive 1-12/ l , 5.08 mm/0.2 in, orange 0.08 - 2.5 mm2 250 V/4 kV/3 16 A 4 8 â'"9 mm AWG 28 - 12 300 V, 15 A » 300 V, 15 A @ / 0.33 in * S tt@ V O E S H ® © ® © ^ S B V N V C * v i, No. of poles Item-No. Pin spacing 5.08 mm/0.2 in, orange 0.08 â'" 2.5 mm2 250 V/4 kV/3 16 A h 8 - 9 mm AWG -
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Abstract: ] â'" â'" 24.69 7972] â'" 24.69 7972] 22.1 5 [.872] â'" 22.1 5[.872] â'" 17.07[.672] â'" 17.07[.672] â'" 1 1 .99 7472" â'" 1 1 .99 7472" â'" D 3[.950] 3[.950] 3[.950 , ARTER TRRMIN/ Pk a in -87 10.54 MA) ION 17415] é /I Ly B POSITION #1 , ) 0.89 f.035' J ) 762 0 ° IN ~.300~ ^ [.002] ^ ,54 + 0.05 1 OO + .OOz 2.54+0.05 [,1 00 + . 0 0 2 ] - ^ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â -
OCR Scan
31MAR2000 ECQ-07-006543 19AUG04 2000M 609-2000MP005 609-1601M
Abstract: Voltage - Continuous (TC = 25°C) Drain Current KSMD20N06 / KSMU20N0 60 Units V 16.8 A - Continuous (TC = 100°C) 10.6 A 67.2 A IDM Drain Current VGSS Gate-Source , - 67.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 16.8 A , KSMD20N06 / KSMU20N06 60V N-Channel MOSFET TO-252 TO-251 Features âââââââ'¢ 16.8A, 60V, RDS(on) = 0.063â"¦ @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss KERSEMI
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30TYP

2SA934

Abstract: 2SA970 m s Type No. tt « Manuf. s m SANYO Ã" S TOSHIBA B a NEC S iL HITACHI « ± a FUJITSU fö t MATSUSHITA H « MITSUBISHI â¡ â'" A ROHM 2SA 671â'"' 0 ÌL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA 672 a a 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SA854 2SA 673' B S; 2SA984 2SA950 2SA719 , 2SA77800 2SA1309A 2SA847A 2SA1039 677 - V- 2SA984 2SA1015 2SA952 2SA933 2SA 678 â" V- 2SA984 , 2SB549 2SB1086 2SA 682 â'" Ã" S 2SB1144 2SA1358 2SB548 2SB647 2SA935 2SA 683 â'" fò T 2SB544
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2SA970 2SA934 2SA817 2SA638 2SA1018 2SA844 2SA705 2SA984 sanyo 2sB1064 2SA929 2SA1399 2SA817A 673AK 2SA1016 2SA499

HG62G

Abstract: HG51BS pad count Package PKG QFP-160 QFP-208 QFP-256 QFP-296 PGA-299 PGA-401 PGA-600 _ BGA-672 A : In , 317 3 536 545 545 409 3 608 667 667 500 3 672 A A A A A A A A A A A A A A A A A A A A - - - - - _ - _ A , -208 QFP-256 QFP-296 L-BGA-352 () : Available signal pins O Underdevelopment A In planning Body size 28 mmn , 77 372 154 154 116 452 250 250 188 580 O A (176) A (176) (220) A (176) (220) (256) A
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HG51BS HG71C HG62S HG62G HG71G HG51B HQ51CS HG51D CRAM03A TQFP-80/100/120 QFP-64/80/100/136/168/208/256/296
Abstract: mm3 (dark grey) 231 -672 ©0.2 mm3solid/0.14 mm2stranded Marker strips, self-adhesive © 0.2 , 300 V, 15 A 9ft 12 A 300 V, 15 A « 8 - 9 mm / 0.33 in Pin spacing 5 mm / 0.197 in, light grey 0.08 - 2.5 mm2 AWG 28 - 12 250 V/4 kV/3 300 V, 15 A 9ft 12 A 300 V, 15 A « C 8 - 9 mm / 0.33 in Pin spacing 5 mm / 0.197 in, light grey 0.08 - 2.5 m m 2 AWG 28 - 12 250 V/4 kV/3 300 V, 15 A W 12 A 300 V, 15 A « 8 - 9 mm / 0.33 in * 9tt«$KlBl®GLLRNV * W « < s> $ m ® G LLR N V -
OCR Scan
249-150/21Q-219

1T100WR-6

Abstract: 4T100WR-30M : XT100WR-XXF Female/Female Connectors Length: 6.72 ±.05 [170.69 ±1.27] Model Number: XT100WR-XXM Male/Male , - 4.0 GHz 1.5, 2.5 & 4 GHz _ 3, 6, 10, 20, 30 & 40 dB DC-1.5GHz 1.5-4 GHz ±0.30 dB ±0.50 dB ±1.00 dB 1.20:1 Derated Linearly to 20 Peak Power Impedance (5uSec Pulse, Operating Temp Range _±0.50 dB _±0.75 dB _±1.50 dB _ 1.35:1 100 Watts Avg. Watts @ +125-C. _5 kW Max. .05% Duty Cycle , J © END VIEW TYPICAL 2.47 [62.7] SQ. *TNC Connectors are 18 GHz Mode Free Note: Units
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1T100WR-6 4T100WR-30M 00WR- 00WR-X MIL-STD-348 XT100WR-XX 8-32UNC-2B XT100WR-XXY
Abstract: M +.006 â'".005 L +.011 â'".000 G Dia. +.011 â'".010 K Dia. +.001 â'".005 N +.001 â'".005 â''8 .789 .125 â'' .687 â'' .562 â'' .473 10 .789 .125 â'' .797 â'' .672 â'' .590 Fiber Optics 12 .789 .125 â'' .906 â'' .781 â'' .750 14 .789 .125 1.031 â'' .906 â'' .875 Contacts 16 .789 .125 1.156 , Amphenol Aerospace 38999 III HD Dualok II I SJT PART # SJTIY â'" Hermetic Solder Amphenol
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SJT07Y

Si4840DY

Abstract: 250 µA 1.37 V On-State Drain Current ID(on) VDS 5 V, VGS = 10 V 672 A , saturated output impedance is best fit at the gate bias near the threshold voltage. A novel , convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a , the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
Vishay Siliconix
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Si4840DY 4840DY

L40K

Abstract: ® TYP DIM F J â Â«HO. 635 £ OF DATUM Y DIM C 6. I DIM Eh -X- 6.72 ±0.18 TYP 3.55 MAX TYP 1.27 ±0.05 0. 10© X Y© 6.04 ±0.10 SEE DETAIL L TUBE PACKAGING 41 M 80 L 40 K 61.67 J , DATE COOE m \J -s 1/ A K POSITION A L POSITION - Y- POSITION 1 I: |finnnnMnPrPi frf^nnnnHnMfrMnfinfiMnnnnnnnnnnnnnnr wijimjimjui JVJ vj ^^wyyuyw WVM^-ü-j^4 W-t' uuuu mmt B 5.08 MAX 2 PLC k A M , NUMBER LTR A A A HOUSING: LCP, UL 94V-O RATED, SLACK. CONTACTS: PHOSPHOR BRONZE. RETENTION LEGS
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L40K 131Z1 DY/NP/0242

LQ101K1LY05

Abstract: LK800D3LA48 ©¿ååæ¶²æ™¶æ˜¾ç¤ºå™¨ 300 105.5 × 67.2 × 4.2 60 带ç"µé˜»è§¦æ'¸å± 105.5 × 67.2 × 3.1 , 0.280 × 0.280 é»'白 无背å‰ç¯ 串行 600 94.8 × 75.2 × 1.64 89.6 × 67.2 , TFT LCD 模块 â˜æ°äº§å" â  LCD 模块 ï¼ç"¨äº IA (Industrial Appliances)> 显示 , .) 1 619 万 6ä½ + 2ä½ FRC 450 CMOS 0.8 76.9 × 63.9 × 4.7 240 × RGB 0.2235 × 53.64 × 26 万 × 320 0.2235 71.52 6ä½ RGB 600 CMOS 0.6 65.0 × 85.0 × 3.4 40
Sharp
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LQ101K1LY05 LK800D3LA48 LQ150X1LG11 LQ035Q3DY01 LQ043Y1DY01 LS013B7DH03 LS013B7DH06 LS027B7DH01 LS044Q7DH01

LS013B7DH03

Abstract: sharp lcd driver 38 Advanced Super V, Transflective LCD 105.5 × 67.2 × 4.2 60 With resistive touch panel 105.5 × 67.2 × 3.1 45 0.6 62.46 × 105.9 × 2.1 30 Advanced Super V, Low , 89.6 × 67.2 B/W No B/L Serial 600 Remarks LCD Display size (cm) [ â'²â , TFT LCD MODULES â˜New â  LCD product Modules Display , ] LQ035Q3DG03 320 × RGB 0.2205 × 70.56 × × 240 0.2205 52.92 16.19 M 6-bit + 2-bit FRC 450
Sharp
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sharp lcd driver rgb led
Abstract: ) f0±1.575 MHz â' 188.2 200 Return loss (dB) 10 15.0 â' 40 67.2 â , SAW Device WFA25B0456CF For Fixed Communication â  Features ● IF SAW filter for WiMAX base station. ● Excellent guaranteed attenuation. ● With a low-band ripple. ● Compact. â  Specifications Model WFA25B0456CF Item min. typ. Nominal frequency : f0 (MHz) â' 456 â' Minimal insertion loss (dB) â' 8.60 13.0 3.75 1-dB passband width (MHz) max. 3.15 Nihon Dempa Kogyo
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Mosfet

Abstract: SSF1090 '" 35 â'" nS TJ=25Ù'C,IF=9.2A â'" 67.2 â'" μC di/dt=100A/μs â'¢ p-n , SSF1090 is a new generation of high voltage and low current Nâ'"Channel enhancement mode trench power , ID@Tc=25Ù' C A Pulsed drain current â'  60 Power dissipation 42 W Linear derating factor 0.4 W/Ù' C VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy â'¡ 240 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode
Good-Ark
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Mosfet

22AT31-T2

Abstract: MIL-PRF-8805 .219 MAX THICK KEYING TAB .038 THICK X .110 WIDE 672 ±.010 DIA SHOULDER CORROSION RESISTANT STEEL , CM ro;: H" LU a z LO revisions WAS Ã'TS 1-9524 WJM 29 OCT 80 G JW 8 JUN 02 co 50566-B WJ M MAY 82 205846 a: lu Iâ'" CO < MICRO SWITCH FREEPORT ILLINOIS USA a DIVISION OF HONEYWELL F CD. MFG. CODE »l»2» ASSEMBLY-TOGGLE SWITCH catalog listing 22AT31 , SWITCH POSITIONING MOUNTING PANEL DETAIL 30°± 6 TOTAL TRAVEL SWITCH NO. I SWITCH NO. 2 SWITCH NO. 3
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22AT31-T2 MIL-PRF-8805 11SM23-T2

1672A

Abstract: FDI040N06 EAS 118* 120 - Pulsed (Note 1) 672 A (Note 2) 872 mJ 7.0 V/ns Single , Maximum Pulsed Drain to Source Diode Forward Current - - 672 A VSD Drain to Source Diode
Fairchild Semiconductor
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FDI040N06 1672A

FDP040N06

Abstract: specifications of MOSFET EAS 118* 120 - Pulsed (Note 1) 672 A (Note 2) 872 mJ 7.0 V/ns Single , Maximum Pulsed Drain to Source Diode Forward Current - - 672 A VSD Drain to Source Diode
Fairchild Semiconductor
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FDP040N06 specifications of MOSFET
Abstract: Maximum Pulsed Drain to Source Diode Forward Current - - 672 A VSD Drain to Source Diode , , Silicion Limited) Drain Current IDM Drain Current EAS 118* 120 - Pulsed (Note 1) 672 A (Note 2) 872 mJ 7.0 V/ns Single Pulsed Avalanche Energy dv/dt -Continuous Fairchild Semiconductor
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Abstract: 67.2 A ï'± 25 V (Note 2) 155 mJ (Note 1) 16.8 A (Note 1) 3.8 7.0 2.5 , Current VGS = 0 V, IS = 16.8 A Drain-Source Diode Forward Voltage - - 67.2 A VSD - Fairchild Semiconductor
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FQD20N06
Abstract: Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * PD TL A 67.2 A , Current - - 16.8 A ISM - - 67.2 A VSD Maximum Pulsed Drain-Source Fairchild Semiconductor
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fqd20n06 data

Abstract: 640uH A - Continuous (TC = 100°C) 10.6 A 67.2 A IDM Drain Current VGSS , Diode Forward Current - - 16.8 A ISM - - 67.2 A VSD Maximum Pulsed
Fairchild Semiconductor
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FQU20N06 fqd20n06 data 640uH

MCE4CT-A2-0000-00A5AAAA1

Abstract: CREE MCE 67.2 A 520 535 8.2 A 450 465 White* 95 A1 Red 30.6 A 620 630 67.2 A 520 535 Blue 8.2 A 450 465 White* 80 B1 Red Green
Cree
Original
MCE4CT-A2-0000-00A5AAAA1 CREE MCE cree mce rgbw cree led mce CREE MCE4CT-A2-0000 CLD-DS22
Abstract: Maximum Pulsed Drain to Source Diode Forward Current - - 672 A VSD Drain to Source Diode , , Silicion Limited) Drain Current IDM Drain Current EAS 118* 120 - Pulsed (Note 1) 672 A (Note 2) 872 mJ 7.0 V/ns Single Pulsed Avalanche Energy dv/dt -Continuous Fairchild Semiconductor
Original

Si4840DY

Abstract: ) VDS 5 V, VGS = 10 V 672 A VGS = 10 V, ID = 14 A 0.0066 VGS = 4.5 V, ID = 12 A
Vishay Siliconix
Original
S-60245R

fs10smj-3

Abstract: 3 45 2 3 4 5 7 102 DRAIN CURRENT to (A) 2 - 672 A MITSUBISHI ELECTRIC
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OCR Scan
fs10smj-3 FS10SMJ-3

1N5000 SERIES

Abstract: 5.61 5.36 4.48 6.72 A 5.04 6.16 B 5.32 5.88 Non 4.80 7.20 A
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OCR Scan
1N5000 SERIES 1N5000 DO-35 1N5230 1N5233 1N5232 1N5231

AT-42035

Abstract: the emitter is grounded. 6-72 A~-^2035 Medium Power Silicon Bipolar T rans;istor Absolute
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OCR Scan
AT-42035 IS21EI2
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