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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

6515 transistor

Catalog Datasheet MFG & Type PDF Document Tags

MPS6513

Abstract: LG IC 621 MPS6513 MPS6514 MPS65Ì5_ PHILIPS INTERNATIONAL SbE 3> 711002t 00424^0 323 MPHIN AMPLIFIER TRANSISTOR T-27-Z/ General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 , air CHARACTERISTICS MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 V , breakdown voltage MPS6513 6514 6515 IC = 0,5 mA;lB = 0 V(BR)CEO > 30 25 25 Emitter-base breakdown
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MPS6515 LG IC 621 6515 transistor T2721 5bti NECC-C-002 T-27-21 10JUA

mps6514

Abstract: b^E ] â  > bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO max , Ftot max. max. 30 6514 6515 25 25 V max. 40 V max. 4,0 V 100 , ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified MPS6513 6514 6515
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53T31 S3T31

mps6513 TRANSISTOR

Abstract: 6514 TRANSISTOR blE ]> â  bbS3 , MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 Co I lecto r- base vo Itage VCBO max. 40 , oc K/W MPS6513 6514 6515 V(BR)CEO > 30 25 25 V V(BR)EBO > 4,0 4,0 4,0 V 'CBO < 50 50 50 nA
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mps6513 TRANSISTOR 6514 TRANSISTOR mi 6514 6514

long deLAY ic timer relay

Abstract: LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM Stabilized voltage 8 Vs Supply voltage 1.2 Oscillator T-65-15 The circuit U 6037 B (DIP 8) and U 6037 , 1.3 Relay output The relay output is an open collector Darlington transistor with integrated 23 V , greaterthan approx. 40Vln the case of load dump. The output transistor is dimensioned so that it can absorb , U 6037 B U 6037 B-FP 44E D asEDcnb ooio7b7 â¡ malgg TELEFUNKEN T-65-15 ELECTRONIC door is , resistance "6H Pin 4 -/a R R* Pin 3 R Ft* Min. 0.001 1.6 1.6 Typ. Max. T-65-15 10 0.5 1.1
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long deLAY ic timer relay LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM relay motor circuit 614H 104MS DIP NF230 T-65-15 T-65-T5

MT 5388 BGA

Abstract: Broadcom 7019 Voltage Transistor Transistor Logic 14 Flow-Control Management Sequential Access Part Number , Transceiver Logic JTAG - Joint Test Action Group LVTTL - Low Voltage Transistor Transistor Logic 15
Integrated Device Technology
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MT 5388 BGA Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 12-03/DS/DL/BAY/10K CORP-PSG-00123
Abstract: BFP620 Infineon technologies NPN Silicon-Germanium RF Transistor Preliminary Data â'¢ â'¢ For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz â'¢ G ms=21 dB at 1.8 GHz Gold metalization for high reliability 70G Hz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VC =2V , mW Junction temperature 7] tbd °C Ambient temperature range Ta -65.+15 0 °C °C Storage temperature range 7"stg -65.+15 0 °C °C Total power dissipation, Ts -
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T-343

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 M PS6513-6515 MPS6520/6521 2PC945 2PC1815 S C 59/S C 70f SOT23/ SO T143+ P U M X I tt P U M Z I ft , 1 > double transistor * TO-71 +SO T143 BCV27/47 PM BTA13/14 Small-signal transistors PRO DUCT , M PS6534/6535 MPSA55/56 DARLING TO NS BC516 MPSA63/64 M PSA76/77 BSS68 1) double transistor t t SC70
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PXTA14 2PA1015 BD136 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 JC546 BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501

TRANSISTOR tl131

Abstract: LDMOS Transistor 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper Description Suggested , .0KECT-ND S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator National , », 65.15 â"¦ W = 0.889, L = 2.540 W = 35, L = 100 TL103 0.027 λ, 65.15 â"¦ W1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80 TL104 0.047 λ, 65.15 â"¦ W = 0.889, L = 3.556 , = 120, W3 = 100 TL113 0.025 λ, 65.15 â"¦ W = 0.889, L = 1.905 W = 35, L = 75 TL114
Infineon Technologies
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TRANSISTOR tl131 PTFB211501E PTFB211501F H-36248-2 H-37248-2

TRANSISTOR tl131

Abstract: 100B100JW500X Transistor 0.76 mm [.030"] thick, r = 4.5 TMM4 2 oz. copper Description Suggested Manufacturer , .0KECT-ND S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator National , W1 = 2.032, W2 = 2.032, W3 = 3.048 W1 = 80, W2 = 80, W3 = 120 TL102 0.033 , 65.15 W = 0.889, L = 2.540 W = 35, L = 100 TL103 0.027 , 65.15 W1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80 TL104 0.047 , 65.15 W = 0.889, L = 3.556 W = 35, L = 140
Infineon Technologies
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100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4
Abstract: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAGE TRANSISTOR TO -92 â'¢ C ollector-E m itter Voltage: V Ceo = 3 0 0 V â'¢ C ollecto r D issipation: Pc (m ax)=625m W ABSOLUTE MAXIMUM RATINGS (TA =25°C) Characteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Junction Tem perature Storage Tem , stg Unit V V V mA mW °C °C â'¢ R e fe rto 2N 6515 for graphs 1 .E m itter 2. Base 3 -
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Abstract: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 â'¢ C ollector-E m itter Voltage: V Ceo = 3 5 0 V â'¢ C ollecto r D issipation: Pc (m ax)=625m W ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Junction Tem perature Storage Tem , stg Unit V V V mA mW °C °C â'¢ R e fe rto 2N 6515 for graphs 1 .E m itter 2. Base 3 -
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Hall sensor 44e

Abstract: hall IC 44E Duty cycle (of the control voltage) Input frequency Output current of the driver transistor during the current rise In the ignition coil Vs " Vb. , , - 14.0 V Saturation voltage of the driver transistor /0 = 2 , ELECTRONIC T-65-15 M in. Vs = VBa, 4.6 Typ. M ax. 16.5 V mA 20 1.5 -0 .5 65 85 350 V mA % Hz , 2 9 T - T le T-65-15 TELEFUNKEN ELECTRONIC F ig .5 Layout T 2 2 2
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Hall sensor 44e hall IC 44E hall 44E 44e sensor U2229B hall switch ignition 2229B

C205

Abstract: LDMOS Transistor TMM 4 TMM 4 2 oz. copper 2 oz. copper *Gerber files for this circuit available , Resistor Resistor Resistor Resistor Transistor Voltage regulator 2000 ohm 5100 ohm 10 ohm 1000 , 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils MTEE$ 65.15 â"¦ 0.011 Î , mils 0.000 λ W 2.032 mm 80 mils L 0.025 mm TL123 MLIN 1 mils 65.15 â"¦ 0.030 λ W 0.889 mm 35 mils L 2.540 mm 100 mils TL124 MLIN 65.15 â"¦ 0.043
Infineon Technologies
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C205 PTFB191501E PTFB191501F

tl2272

Abstract: TL239 = 4.5 LDMOS Transistor TMM 4 TMM 4 2 oz. copper 2 oz. copper *Gerber files for this , PCC104BCT-ND Resistor Resistor Resistor Resistor Resistor Resistor Transistor Voltage regulator , mils W3 2.540 mm TL120 MTEE$ 65.15 0.011 W1 100 mils 0.889 mm 35 mils , 80 mils L 0.025 mm TL123 MLIN 65.15 1 mils 0.030 W 0.889 mm 35 mils L 2.540 mm 100 mils TL124 MLIN 65.15 0.043 W 0.889 mm 35 mils L
Infineon Technologies
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tl2272 c104 TRANSISTOR MM380 445-1411-2-ND TL111 3224W-202ECT-ND

STA455C

Abstract: STA405A ANKEN DISCRETES TRANSISTOR ARRAYS Type No. VcEO (V) STA301A STA302A STA303A STA304A STA305A , ,)10 0 -60 60 -60 60±10 -60 100 60 -60 65±15 -50 200 60+10 160 60 -60 35 -35 60 -60 30 -30 60+10 60±10 , 34 35 36 37 38 38 8-34 T i -V TRANSISTOR ARRAYS ^C EO Type No. IcUcp) (A) 4(6 , II 1 TRANSISTOR ARRAYS SAN KEN DISCRETES n © , 4 1- Su. ' 10 8-36 I TRANSiSTOR ARRAYS SAXKEX DISCRETES 8-38 T 1 T
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STA401A STA405A STA437A STA455C SMA4031 SMA6012 sla1008 SLA*6022 SLA4031 STA308A STA311A STA312A STA321A STA322A STA341M

sma4031

Abstract: STA451C TRANSISTOR ARRAYS TRANSISTOR ARRAYS VCEO IC (ICP) hFE Type No. (V) STA301A STA302A , 100 200 80 60±10 100±15 -120 60 60 35±5 -60 60 -60 60±10 -60 100 60 -60 65±15 -50 , TRANSISTOR ARRAYS TRANSISTOR ARRAYS VCEO IC (ICP) hFE (V) (A) Equivalent Circuit Diagram , TRANSISTOR ARRAYS 25 TRANSISTOR ARRAYS 26 A TM MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 TRANSISTOR ARRAYS 27
Allegro MicroSystems
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STA438A STA451C STA471A SMA4030 SMA4032 sta475a SLA6010 STA342M STA402A STA403A STA404A STA406A STA407A

HM28S

Abstract: HMBT28S HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications. SOT-23 Features · Excellent hFE Linearity · , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2
Hi-Sincerity Microelectronics
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HM28S

DARLINGTON TIN

Abstract: Darlington transistor to 92 HI-SINCERITY Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature , 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount
Hi-Sincerity Microelectronics
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DARLINGTON TIN Darlington transistor to 92

transistor tl

Abstract: HMBT6427 HI-SINCERITY Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2004.08.31 Page No. : 1/4 MICROELECTRONICS CORP. HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2
Hi-Sincerity Microelectronics
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transistor tl

HMBTA06

Abstract: HI-SINCERITY Spec. No. : HE6840 Issued Date : 1994.07.29 Revised Date : 2004.09.16 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA06 NPN SILICON TRANSISTOR Description Amplifier Transistor SOT-23 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1
Hi-Sincerity Microelectronics
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