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Part Manufacturer Description Datasheet BUY
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4353IMS#TRPBF Linear Technology LTC4353 - Dual Low Voltage Ideal Diode Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4359HMS8#TRPBF Linear Technology LTC4359 - Ideal Diode Controller with Reverse Input Protection; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy

6 pin diode n10

Catalog Datasheet MFG & Type PDF Document Tags

fah 37 reverse protection diode

Abstract: NSSM038A notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 , Code 00h = 0% Duty Cycle, FFh = 100% Duty Cycle 6 Doc. No. 8160_DS, Rev. N1.0 LDS8160 , . Characteristics subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6: Offset , LDS8160 Dual-Output RGB / 6-Channel WLED Driver with LED-SenseTM Temperature & Color Compensation , interface; additional address pin allows 4 unique slave addresses. Power efficiency up to 98%; average
IXYS
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fah 37 reverse protection diode NSSM038A 6 pin diode n10 NSSW020BT-P1 D 8049 HC ADC 7815

fah 37 reverse protection diode

Abstract: NSSM038A © 2009 IXYS Corp. Characteristics subject to change without notice 6 Doc. No. 8160_DS, Rev. N1.0 , subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6: Offset Codes , . Characteristics subject to change without notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 11 12 13 14 15 5, 7, 16 PAD Name SCLK SDAT SADD GND EN LEDC2 LEDC1 LEDB2 LEDB1 , ) Volts Doc. No. 8160_DS, Rev. N1.0 LDS8160 PACKAGE DRAWING AND DIMENSIONS 16-PIN TQFN (HV3), 3mm
IXYS
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c00102 NSSM038AT NSSM038AT-E

bd 8161

Abstract: ba 9319 /61_DS, Rev. N1.0 LDS8161/41 A0h Silicon diode dV F/dT [7:0] 8 A2h LED dV F/dT [7:0 , Silicon diode series resistance offset Factory recommended loaded value = 04h = ~ 68 ohms -6 Formula , 9 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PIN DESCRIPTION Function 2 I C Serial clock , to GND on the PCB NC PAD Pin # 8161 8141 1 1 2 2 3 3 4 4 6 6 8 9 10 10 11 11 , LDS8161/41 6-Channel / 4-Channel High-Side Linear WLED Driver with LED Temperature Compensation
IXYS
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bd 8161 ba 9319 sad LEDA 100C 2N3904 LDS8161 LDS8141

si 9753 8 pin for led driver

Abstract: offset for the Si diode. Typically should set both offsets to be equal. See Table 5 & 6 Defines T-code , WLED de-rating. De-Rating starts at 55ºC junction. 6 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161 , to change without notice 9 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PIN DESCRIPTION , without notice 16 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PACKAGE DRAWING AND DIMENSIONS 16-PIN , LDS8161/41 6-Channel / 4-Channel High-Side Linear WLED Driver with LED Temperature Compensation
IXYS
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si 9753 8 pin for led driver
Abstract: notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 , 100% Duty Cycle 6 Doc. No. 8160_DS, Rev. N1.0 LDS8160 ADDRESS DESCRIPTION BITS 19h , . Characteristics subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6: Offset , . N1.0 LDS8160 PACKAGE DRAWING AND DIMENSIONS 16-PIN TQFN (HV3), 3mm x 3mm, 0.5mm PITCH SYMBOL , LDS8160 Dual-Output RGB / 6-Channel WLED Driver with LED-SenseTM Temperature & Color Compensation IXYS
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Luxeon 3w rgb led circuit diagram

Abstract: Bd 8694 pin configuration the LEDs 6 Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 ADDRESS DESCRIPTION BITS , for the Si diode. Typically should set both offsets to be equal. See Table 5 & 6 Defines T-code, at , * Bit 0 Si Diode Offset 0 0* *) Value by default Table 6: Offset Codes for Tj-Ta Temperature , notice 10 Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 PIN DESCRIPTION Pin # 1 2 3 4 , the lower more lumen Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 TM Figure 6
IXYS
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LDS9001 Luxeon 3w rgb led circuit diagram Bd 8694 pin configuration BD 9280 diode ed 92-02 Luxeon LDS 10000 Luxeon 3w LED lumen LDS9003/9001

hioki 8830

Abstract: LSS-712B pcs 24 22 20 18 16 14 12 10 8 6 4 2 0 5.6 6 6.4 6.8 7.2 7.6 8 8.4 , 2. Data pcs 16 14 12 10 8 6 4 2 0 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 , (without diode) 1-3. 1-3. Ambient temperature 1-4. ; Standard atmospheric conditions , 5 6 7 8 9 10 11 Average Stdev 3. Result The specifications of contact resistance which is max 100 milliohm can be guaranteed. Rev. A 6 of 30
Tyco Electronics
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hioki 8830 LSS-712B koike relay IEC60255 koike relays 26049 S-2602826049 PCFN-112D2M FK00-0099-04 HP-410 VH-6200 DC500V

60V N-Channel Logic level QFET

Abstract: FDS6612A D D DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 7 2 8 G , Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6612A Rev D1 , =0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1) .MODEL MMEDMOD NMOS (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L , VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 7 14 ns 5 10 ns td(off) Turn­Off Delay Time 22 35 ns tf Turn­Off Fall Time 3 6 ns 5.4 7.6 nC Qg
Fairchild Semiconductor
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60V N-Channel Logic level QFET fds6612
Abstract: handling capability DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings 3 2 8 G S G S , 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage , (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO=2.55 KP=50 IS=1E-30 N=10 , , VGS = 10 V, ID = 1 A, RGEN = 6 â"¦ 7 14 ns 5 10 ns td(off) Turnâ'"Off Delay Time 22 35 ns tf Turnâ'"Off Fall Time 3 6 ns Qg Total Gate Charge Fairchild Semiconductor
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6 pin diode n10

Abstract: FDS6612A 5 6 G S G S S S S S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol Drain , Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6612A Rev D (W , =.1) .MODEL MMEDMOD NMOS (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO , = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 7 14 ns 5 10 ns 22 35 ns 3 VDS = 15 V, VGS = 5 V ID = 8.4 A, 6 ns 5.4 7.6 nC 1.7 nC 1.9 nC
Fairchild Semiconductor
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083E-3 TH87 n10 diode N084

PCJ-112D3MH

Abstract: IEC60255 25 20 15 10 5 0 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 8.2 8.4 , voltage ; Rated voltage (without diode) 1-3. 1-3. Ambient temperature 1-4 , instrument ; RPT- 2. Data pcs 30 25 20 15 10 5 0 0 2 4 6 8 , . Rev. A 6 of 32 Qualification Test Report 501-79544 Coil resistance Distribution , 1-5. Amount of sample 1-6. ; n=10 1-6. Measurement instrument ; TOS5051, TOS8700
Tyco Electronics
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PCJ-112D3MH 2502A s3598 GP035 S-35983 FK00-0022-04 AC900V AC4800V

koike relays

Abstract: IEC60255 -106LMR2 1-2. 1-2. Operate voltage ; Rated voltage (without diode) 1-3. 1-3. Ambient , resistance which is max 100 milliohm can be guaranteed. Rev. A 6 of 32 Qualification Test Report , 1-5. Amount of sample 1-6. ; n=10 1-6. Measurement instrument ; TOS5051, TOS8700 , NO. VAC) NG Relay No. NG Voltage Relay No. NG Voltage 1 2 3 4 5 6 7 8 9 10 2,020 1,950 1,890 2,040 1,920 1,860 1,780 1,940 2,080 1,880 1 2 3 4 5 6 7
Tyco Electronics
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S-2586925890 SDT-S-106LMR2 FK00-0067-04 AC1200V

FDS2572

Abstract: MS-012AA n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 ISCL RDRAIN 6 , (TOT) = 29nC (Typ.), VGS = 10V · Low QRR Body Diode · Maximized efficiency at high frequencies · UIS , /Full-Bridge 24-volt Forward and Push-Pull topologies D D D D DD D D Pin 1 SO-8 G S G S S S S S 4 6 SO-8 5 3 7 2 8 1 MOSFET Maximum Ratings TA=25°C unless , 6 nC - 8 - nC - 6 - nC - 4 - nC Dynamic Characteristics
Fairchild Semiconductor
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FDS2572 MS-012AA m067

FDB035AN06A0

Abstract: NL104 ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and , ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse , Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 160 VGS = 20V VGS = , VGS , GATE TO SOURCE VOLTAGE (V) 6 0 0.5 1.0 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7 , 8 CISS = CGS + CGD C, CAPACITANCE (pF) COSS C DS + C GD 6 1000 CRSS = CGD 4
Fairchild Semiconductor
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FDB035AN06A0 NL104 FDB03

2511NZ

Abstract: m068 TSSOP-8 FDW2511NZ Rev. A1 G1 Pin 1 ©2008 Fairchild Semiconductor Corporation D2 G2 , Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 1.3A - 0.7 1.2 V , a mininum copper pad on FR-4. 3 The diode connected to the gate and source serves only as , 1.0 0.8 0.6 0.4 6 VGS = 4.5V 4 VGS = 2.5V 2 0.2 0 0 0 25 50 75 , Operating Area 2.0 2.5 Figure 6. Transfer Characteristics 40 40 VGS = 10V PULSE DURATION =
Fairchild Semiconductor
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2511NZ m068 BV150 51E3 Diode N7 S2 KP17
Abstract: n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 ISCL RDRAIN 6 8 , S1 D1 TSSOP-8 G1 Pin 1 ©2008 Fairchild Semiconductor Corporation FDW2511NZ Rev. A1 , tOFF Turn-Off Time - - 144 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 1.3A - 0.7 1.2 V trr Reverse Recovery Time ISD = 7.1A , The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage Fairchild Semiconductor
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FDP3682

Abstract: kp32 tube 18.5 nC( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , ) Power dissipation Derate above 25oC Operating and Storage Temperature 32 23 6 Figure 4 55 95 0.63 -55 to , VGS = 10V, RGS = 16 9 46 26 32 83 87 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 32A ISD = 16A , Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 80
Fairchild Semiconductor
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FDP3682 kp32 tube FDB3682

FDS3672

Abstract: ) = 28nC (Typ.), VGS = 10V · Low QRR Body Diode · Maximized efficiency at high frequencies · UIS Rated , Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S 7 8 MOSFET Maximum Ratings TA=25°C unless otherwise noted , 28 4 10 6.8 6 37 6 pF pF pF nC nC nC nC nC Resistive Switching Characteristics tON td(ON) tr td , = 50V, ID = 4A VGS = 10V, RG = 10 14 20 37 27 51 96 ns ns ns ns ns ns Drain-Source Diode
Fairchild Semiconductor
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FDS3672

tc143e

Abstract: 25E5 tube =3.0e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=5.7e-10 IS=1.0e-30 N=10 M=0.58) .MODEL MmedMOD NMOS (VTO=3.5 KP=6 , 39 nC ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , ns ns ns Drain-Source Diode Characteristics V SD trr QRR Source to Drain Diode Voltage Reverse , AN7515 Figure 6. Unclamped Inductive Switching Capability 80 VGS = 10V ID, DRAIN CURRENT (A) 60 VGS = , Voltage vs Junction Temperature 10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 75V 8 6 CRSS = CGD 4
Fairchild Semiconductor
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FDB2552 tc143e 25E5 tube m062 MOTOR marking m062 tc2-16 FDP2552
Abstract: 4 6 3 7 2 8 1 D D D D SO-8 Pin 1 SO-8 G S G S S S S S MOSFET , Applications â'¢ â'¢ â'¢ â'¢ â'¢ Qg(TOT) = 29nC (Typ.), VGS = 10V â'¢ Low QRR Body Diode â'¢ Maximized , 48 - pF - 29 38 nC - 4 6 nC - 8 - nC - 6 - nC , Drain-Source Diode Characteristics ISD = 4.9A - - 1.25 V ISD = 3.1A - - 1.0 V , ISD = 4.9, dISD/dt =100A/µs - - 158 nC VSD Source to Drain Diode Voltage trr Fairchild Semiconductor
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