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Part Manufacturer Description Datasheet BUY
HM1-65642B/883 Intersil Corporation 8KX8 STANDARD SRAM, 150ns, CDIP28 visit Intersil
24502BVA Intersil Corporation 1KX4 STANDARD SRAM, 120ns, CDIP18 visit Intersil
BQ4013LYMA-70 Texas Instruments NON-VOLATILE SRAM MODULE visit Texas Instruments
8403603JA Intersil Corporation 2KX8 STANDARD SRAM, 90ns, CDIP24, CERAMIC, DIP-24 visit Intersil
HM1-65162C/883 Intersil Corporation 2KX8 STANDARD SRAM, 90ns, CDIP24, CERAMIC, DIP-24 visit Intersil
8403606JA Intersil Corporation 2KX8 STANDARD SRAM, 70ns, CDIP24, CERAMIC, DIP-24 visit Intersil

5v sram 4mb 54pin

Catalog Datasheet MFG & Type PDF Document Tags

L24002

Abstract: NAND "read disturb" 1GB ) Status 144MRDRAM TM (2nd gen.) Pin assignments Low Power SRAM 1M 2M 4M Mitsubishi Low Power SRAM Technical Direction 1Mbit(x8) Low Power SRAM the Fourth Generation 2Mbit(x16) Low Power SRAM the Second Generation 4Mbit(x8) Low Power SRAM the Third Generation Fast SRAM 4M , SRAM the Third Generation 512k word x 8bits 4.5~5.5V TTL 55ns @Vcc=4.5V 50mA @Vcc=5.0V , Large Capacity 1M 4M Low Power Vcc (5V High Speed Fast SRAM 0.4um Super CMOS 0.25um CMOS
Mitsubishi
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L24002 NAND "read disturb" 1GB CMOS 0.8mm process cross M2V28S30AVP PC133 registered reference design Lithium battery CR2025 sony L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM L-11003-0I

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 Wafer process Cell type Sample (CS) 4Mbit (x8) Low Power SRAM the Third Generation 512k , MITSUBISHI ELECTRIC L-11002-01 CONTENTS 1. General 2. DRAM 3. Low Power SRAM 4. Fast SRAM 5. MCP , PLANNING PRODUCTION DEVELOPMENT MEMORY IC (DRAM,SRAM,FLASH,MODULE,PC CARD) DIV. SYSTEM LSI (MCU,ASIC , ·MCU ,MPU ·ASIC ·eRAM SAIJO FACTORY ·MCU ·ASIC ·eRAM KOCHI FACTORY ·MCU ,MPU ·ASIC ·SRAM FUKUOKA SEMICONDUCTORS FACTORY EUROPEAN FACTORY MSE ·SRAM ·FLASH ·MCU (DESIGN) KITA-ITAMI ·OPT
Mitsubishi
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sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference 02bjxx TSOP 48 Package nand memory toshiba L7103

5v sram 4mb 54pin

Abstract: elbh Access and R/W Cycle Time The Simtek STK14EC16 is a 4MB fast static RAM with a non-volatile Quantum , to SRAM on Power Up The SRAM provides the fast access & cycle times, ease of use and unlimited read & write endurance of a normal SRAM. Data transfers automatically to the non-volatile storage , to the SRAM (the RECALL operation). Both STORE and RECALL operations are also available under , Retention · Single 3.0V +20%, -10% Operation · Commercial, Industrial Temperatures · 44-pin or 54-pin 400
Simtek
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5v sram 4mb 54pin elbh 5v sram tsop54 A17-A0 04B46 ML0061

toshiba toggle mode nand

Abstract: TC518128 5V 256K / 1M / 4M SRAM 120 - 150ns (2.7V) 1M / 2M SRAM 3V 85ns (2.7V) 1M / 2M / 4M SRAM , SRAM n SRAM PACKAGE SELECTION GUIDE Density 256k 1M Org. x8 x8 VDD 5V 5V 3V DIP 28 32 , ) 5V (4 M SRAM) 21.35mm 14mm 20mm x8 160mm2 32pin TSOP-1 0.5mm pitch 8.0mm 140mm2 40pin TSOP , -1 0.5mm pitch TSB current package 54pin TSOP-2 0.8mm pitch 57 Standard SRAM n STATIC RAM & , Standard SRAM n TOSHIBA 256K BIT E/R CMOS STATIC RAM FEATURES Single Power Supply Voltage : 5V+ 10
Toshiba
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toshiba toggle mode nand TC518128 TC518129 551664 TC551001 equivalent TC518512 64M128M 100MH 200MH 500/600MH 800MH 400MH

30A008-00

Abstract: CFT-5 (Top/Bottom) Vdd Power ( + 5V) Vss Ground 256KX1 BASED CMOS SRAM FAMILY -PRELIMINARY- DPS25616 , 256KX18, 512KX9 DPS20482 - 2MB X 2, 4MB X 1 â'¢ Fast Access Times: -25, 35, 45, 55ns (max.) â'¢ Completely Static Operation: No Clock Or Refresh Needed â'¢ Single+5v Power Supply ± 10% Tolerance â , State Output â'¢ Standard Packages: 30-Pin SIP - DPS2564, DPS10241 44-Pin DIP - DPS25616, DPS20482 54-Pin , DEVICE TYPE TEMPERATURE/SCREENING i â  SRAM C â'¢ 0°C to 70°C D - ORAM 1 - ~40°C to +85 C, plui
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OCR Scan
256KX4 256KX16 30A008-00 CFT-5 A618 S2564 1024KX 512KX8 1024KX4 DPS25618

tsop54-400

Abstract: STK14EC16 Access and R/W Cycle Time The Simtek STK14EC16 is a 4MB fast static RAM with a non-volatile Quantum , to SRAM on Power Up The SRAM provides the fast access & cycle times, ease of use and unlimited read & write endurance of a normal SRAM. Data transfers automatically to the non-volatile storage , to the SRAM (the RECALL operation). Both STORE and RECALL operations are also available under , Retention · Single 3.0V +20%, -10% Operation · Commercial, Industrial Temperatures · 44-pin or 54-pin 400
Simtek
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tsop54-400 FBGA48 TSOP54

nc10 samsung

Abstract: 278R33 512KB - BootROMl - Byte or Halfword - Flash ROM Supported ST - S3C4520A SRAM - ISDN , ADDR[18.0] IOM2_STRB USB_XCLKO IOM2_BCL LDATA[15.0] C dram sram nECS[3.0] nECS[3.0] ADDR[17.0] nOE nWBE[1.0] nOE nWBE[1.0] LDATA[15.0] sram rom XDATA[15.0] nRCS , LDATA15 3 KM416V4004B -KM416S4030CT SDRAM (4M X 16Bit) 3.3V , 2Bank Max Freq : 100MHz 54Pin TSOP(400mil X 875mil) (0.8 mm Pin pitch) -KM416V4004B EDO (4MB X 16Bit) 3.3V Ref Cycle : 8K / 64ms Speed
Samsung Electronics
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DSUB25 nc10 samsung 278R33 78R33 SP232 RPACK 10k x 9 samsung lcd JTAG SNDS200 RS232 S3C4520 VDD33 BLM41P02

Samsung S3C4510

Abstract: Samsung S3C4530 DRAM0 Signal ROM0 Signal 5V Peripheral power Regulator (3.3V,5V) SRAM External bank , controller, a DRAM controller, and a controller for ROM/SRAM and Flash memory. The System Manager includes , MICROCONTROLLER ARM7TDMI 32-bit RISC CPU ICE Breaker TAP Controller for JTAG 2-Bank ROM SRAM , / SDRAM selectable DRAM bank - External I/O status LCD driver (External Bank 0), 4M-bit SRAM (selectable , 5V. Power to SNDS200 is supplied through a 5V DC jack power adapter. SNDS200 board has distributed
Samsung Electronics
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Samsung S3C4510 Samsung S3C4530 psos prepc S3C4510 s3c4530 78R33 regulator 40-S3-C4520A-072001 32-BIT

uPD3599

Abstract: nec 3S4M . 116 Flash MEMORY . 117 MCP (Flash Memory + SRAM , µPD17P203A 52QFP µPD17P204 µ PD17203A ROM 8K bytes, SRAM 4K knibles µPD17204 ROM 16K bytes, SRAM 2K
NEC
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uPD3599 nec 3S4M MOS FET BUZ 444 MC-7643 transistor nec 2SK2396 RD2.4S equivalent V20HL V30HL V30MX V40HL V50HL V55PI

TX38D85VC1CAA

Abstract: SD6109 Disabled Integrated Real Time Clock (RTC) with 256B CMOS SRAM Supports ACPI Day-Month and Month-of-Year- Alarm 256 Bytes of CMOS SRAM Provides RTC H/W Year 2000 Solution 13 7521Plus / N N/B MAINTENANCE , Networking NAND Tree for Ball Connectivity Testing 672-Balls BGA Package 1.8V Core with Mixed 3.3V and 5V I/O , rate: max. 4Mb Link distance: 0.01 to 1 m Half angle : ±15° Bit Error Rate (BER) : 10 -9 Peak , compliant Supports two 16-bit PC card or Cardbus card; sockets powered at 3.3V or 5V with hot insertion and
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7521P TX38D85VC1CAA SD6109 30-pin connector for LVDS hannstar foxconn DIODE S3V 81 SiS900 lan MINISMDC110 MINISMD0C14-2

micro servo 9g

Abstract: micro servo 9g tower pro PD17203A 52QFP 52QFP µ µPD17P204 PD17P204 µ PD17204 µPD17204 ROM ROM 8K 8K bytes, bytes, SRAM SRAM 4K 4K knibles knibles ROM ROM 16K 16K bytes, bytes, SRAM SRAM 2K 2K knibles knibles 28SDIP/SOP
NEC
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micro servo 9g micro servo 9g tower pro uPa2003 2SK1060 201 Zener diode 2SK2396 V25HS V35HS VR4100 VR4101 VR4200 VR4300

sc5 s dc 6v relay

Abstract: UPD66010 PD17203A µPD17204 ROM 8K bytes, SRAM 4K knibles ROM 16K bytes, SRAM 2K knibles Pre-set remote , applications Portable radio Package · 54-pin QFP Supply voltage µPD1716 TV, VCR, car radio
NEC
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sc5 s dc 6v relay UPD66010 UPD7752 P48D-70-600 AC03E uPA1601 VR4102 R5000 VR10000 X10679EJEV0SG00