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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

5Cs transistor

Catalog Datasheet MFG & Type PDF Document Tags

5Ct transistor

Abstract: 5Cs transistor BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A F , / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 5CR 5CS 5CT 5CR 5CS 5CT SOT , Range 1)Transistor mounted on an FR4 printed-circuit board. Symbol PD VCBO VCEO VEBO IC RJA TJ, TSTG , 200mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number , , PNP Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11
Taiwan Semiconductor
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5Ct transistor 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code MIL-STD-202 BC807-16W BC807-25W BC807-40W 100MH

5Ct transistor

Abstract: 5Cs transistor BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A , / 7" Reel 5CR SOT-323 BC807-25W RF 3K / 7" Reel 5CS SOT-323 BC807-40W RF 3K / 7 , 3K / 7" Reel 1.6 0.063 0.8 0.031 5CS SOT-323 BC807-40W RFG 0.65 0.026 5CT 0.8 , TJ, TSTG 1)Transistor mounted on an FR4 printed-circuit board. Version : A11 BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number
Taiwan Semiconductor
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5Cs transistor

Abstract: 5BS transistor BC807./ BC808. PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary type: BC817./W, BC818./W (NPN) Type BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W Marking 5As 5As 5Bs 5Bs 5Cs 5Cs 5Fs 5Fs 5Gs 5Gs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2
Infineon Technologies
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5BS transistor package marking 5as marking 5bs 5as package transistor 5bs BC807W BC808W

5Cs transistor

Abstract: BC 170 transistor PNP Silicon AF Transistor BC 807W BC 808W q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W (NPN) 3 1 2 Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code (tape and reel) Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1 B 2 E 3 C Package SOT-323 Maximum Ratings
Siemens
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BC 170 transistor TRANSISTOR BC 807w

5Cs transistor

Abstract: SD1426 NPN planar transistor designed primarily for common base am plifier applications in the 800 - 960 MHz , 5CS-THOMSON- SD1426 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z|N cT TYPICAL
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0G7043 Q07Q437

Q62702-C2325

Abstract: SIEMENS BC 807-16W PNP Silicon AF Transistor â'¢ For general AF applications â'¢ High collector current â'¢ High current gain * Low collector-emitter saturation voltage â'¢ Complementary types: BC817W, BC818W (NPN) 2 Pin Configuration Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326 1 =B U L J U II II C C M M BC 807-40W 5Cs Q62702-C2327 1 =B Package SOT , Silicon AF Transistor Electrical Characteristics at 7~a=25°C, unless otherwise specified Parameter
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VS005561 E35L0S D120551 D1E055E G1B05S3

transistor 5cs

Abstract: marking 5Cs BC807./BC808. PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary type: BC817./W, BC818./W (NPN) · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 Type Marking BC807-16 5As 1=B 2=E 3=C - - - SOT23 BC807-16W 5As 1=B 2=E 3=C - - , =C - - - SOT323 BC807-40 5Cs 1=B 2=E 3=C - - - SOT23 BC807-40W 5Cs
Infineon Technologies
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marking 5Cs 5cs 13

5Cs transistor

Abstract: transistor 5bs SIEMENS PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary types: BC817W, BC818W (NPN) BC 807W BC 808W Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 , 01.97 SIEMENS PNP Silicon AF Transistor Electrical Characteristics at r A= 25°C, unless otherwise
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5Cs transistor

Abstract: Q62702-C2328 BC 807-16W PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary types: BC817W, BC818W (NPN) Type Marking Ordering Code Pin Configuration Package BC 807-16W 5As , -323 BC 807-40W 5Cs Q62702-C2327 1=B 2=E 3=C SOT-323 BC 808-16W 5Es , Group V 2 Dec-19-1996 BC 807-16W PNP Silicon AF Transistor Electrical Characteristics at
Siemens
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C2328 transistor C2330 c2330 TRANSISTOR C2328 1B marking transistor c2330 equivalent
Abstract: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - , Current Notes: 1. Transistor mounted on a FR4 printed-circuit board SYMBOL MIN MAX UNIT , -323 3K / 7" Reel 5CR BC807-25W RF G SOT-323 3K / 7" Reel 5CS BC807-40W RF G Taiwan Semiconductor
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S1404006

CD4000B Family specifications

Abstract: CD4001B D, F, K) DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR TA FtJLL PACKAGE TEMPERATURE HANGE (AH Pa , CONNECTION CD4001B CHIP PHOTOGRAPHS Dimensions and Pad Layouts HC = NO CONNECTION CD4002B 5?CS- ?4447R
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CD4000B CD4025B CD4000B Family specifications 5Cs transistor 5cs 58 RCA-CD4000 15-V RCA-CD4000B 92CS-Z4468RI 92CS-2B909 92CS-35060

5Cs transistor

Abstract: 5Cs transistor 5cs 58 Minidip and S08 packages, designed as a controller and driver of a discrete power MOS transistor for the , external power transistor is switched off, until the overvoltage situation disappears. However if the , 3.5v dynamic ovp static ovp D95IN218 Figure 2: Overvoltage Protection Circuit Ccomp. 5CS
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L6560 L6560A L6560D L6560AD D1141 LA-511 B1ET2910A L6560/A

70413080

Abstract: 70473180 SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE , IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-220 TRANSISTOR 2005M , Transistor Summary *NOTICE* When replacing power output devices, our designs do NOT require Banks or that
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70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 2N3391 SPS-953 MPS-8097 2N6520 MPS-A18 2N6539
Abstract: optional. 5. The DC current gain ß of transistor 8050 ranges from 120 to 200. 6. All unused trigger pins , :. 5CS, World Tracte Squaffe, Vcwa:' :i; "¡23 Hol öLiii iîd ., K»Ljn Tc.c'ig, K c w lo c rr Hong K a -
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W5280 W528X S52-27 8SS-3-S770 SSS-2-71

tda 2794

Abstract: pabx state. _PZ7 5CS-THOMSON_ â'¢Tw GuneaseLEeinäeuDes â  7=12^237 GD73317 LÛ2 â  This Material , transistor switches capable of sinking up to 120 mA each. The power to the drivers is derived from the , transistor is pulled out of its linear region. *) Open Loop Detection The open-loop status bit becomes
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STLC5444 PLCC44 tda 2794 pabx BTS 5237 D95TL229 DIP24 D0733E
Abstract: , which are saturated DMOS transistor switches capable of sinking up to 120 mA each. The power to the , Detection ) The low-output-voltage status bit becomes ac­ tive when the output DMOS transistor is , 7T2T237 0D73327 -
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00733ES
Abstract: -VCC U2 AP1681 4-FB D5 6-GND R21 C8 1-DIM 7-OUT 2-RD 3-RI 5-CS R18 R22 R23 , 1 Q3 Transistor, NPN, BC847,SOT-23 1 Z1 Zener 15V, SOD-80 1 R12,R13 The BCD Semiconductor
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old 14 inch colour tv circuit diagram

Abstract: example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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old 14 inch colour tv circuit diagram ST631 ST63126 ST63156 CDIP28 CDIP40 PDIP28

SMD Codes

Abstract: TRANSISTOR SMD T1P critical transition from transistor to thyristor operation does not create local hot spots, which could , transition time from thyristor to transistor operation (i.e. on-state to off-state), which is very important
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
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