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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

5Cs transistor

Catalog Datasheet MFG & Type PDF Document Tags

5Ct transistor

Abstract: 5Cs transistor BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A F , / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 5CR 5CS 5CT 5CR 5CS 5CT SOT , Range 1)Transistor mounted on an FR4 printed-circuit board. Symbol PD VCBO VCEO VEBO IC RJA TJ, TSTG , 200mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number , , PNP Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11
Taiwan Semiconductor
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5Ct transistor 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code MIL-STD-202 BC807-16W BC807-25W BC807-40W 100MH

5Ct transistor

Abstract: 5Cs transistor BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A , / 7" Reel 5CR SOT-323 BC807-25W RF 3K / 7" Reel 5CS SOT-323 BC807-40W RF 3K / 7 , 3K / 7" Reel 1.6 0.063 0.8 0.031 5CS SOT-323 BC807-40W RFG 0.65 0.026 5CT 0.8 , TJ, TSTG 1)Transistor mounted on an FR4 printed-circuit board. Version : A11 BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number
Taiwan Semiconductor
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5Cs transistor

Abstract: 5BS transistor BC807./ BC808. PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary type: BC817./W, BC818./W (NPN) Type BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W Marking 5As 5As 5Bs 5Bs 5Cs 5Cs 5Fs 5Fs 5Gs 5Gs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2
Infineon Technologies
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5BS transistor package marking 5as marking 5bs 5as package transistor 5bs BC807W BC808W

5Cs transistor

Abstract: BC 170 transistor PNP Silicon AF Transistor BC 807W BC 808W q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W (NPN) 3 1 2 Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code (tape and reel) Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1 B 2 E 3 C Package SOT-323 Maximum Ratings
Siemens
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BC 170 transistor TRANSISTOR BC 807w

5Cs transistor

Abstract: SD1426 NPN planar transistor designed primarily for common base am plifier applications in the 800 - 960 MHz , 5CS-THOMSON- SD1426 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z|N cT TYPICAL
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0G7043 Q07Q437

Q62702-C2325

Abstract: SIEMENS BC 807-16W PNP Silicon AF Transistor â'¢ For general AF applications â'¢ High collector current â'¢ High current gain * Low collector-emitter saturation voltage â'¢ Complementary types: BC817W, BC818W (NPN) 2 Pin Configuration Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326 1 =B U L J U II II C C M M BC 807-40W 5Cs Q62702-C2327 1 =B Package SOT , Silicon AF Transistor Electrical Characteristics at 7~a=25°C, unless otherwise specified Parameter
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VS005561 E35L0S D120551 D1E055E G1B05S3

transistor 5cs

Abstract: marking 5Cs BC807./BC808. PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary type: BC817./W, BC818./W (NPN) · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 Type Marking BC807-16 5As 1=B 2=E 3=C - - - SOT23 BC807-16W 5As 1=B 2=E 3=C - - , =C - - - SOT323 BC807-40 5Cs 1=B 2=E 3=C - - - SOT23 BC807-40W 5Cs
Infineon Technologies
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marking 5Cs 5cs 13

5Cs transistor

Abstract: transistor 5bs SIEMENS PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary types: BC817W, BC818W (NPN) BC 807W BC 808W Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 , 01.97 SIEMENS PNP Silicon AF Transistor Electrical Characteristics at r A= 25°C, unless otherwise
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5Cs transistor

Abstract: Q62702-C2328 BC 807-16W PNP Silicon AF Transistor · For general AF applications · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary types: BC817W, BC818W (NPN) Type Marking Ordering Code Pin Configuration Package BC 807-16W 5As , -323 BC 807-40W 5Cs Q62702-C2327 1=B 2=E 3=C SOT-323 BC 808-16W 5Es , Group V 2 Dec-19-1996 BC 807-16W PNP Silicon AF Transistor Electrical Characteristics at
Siemens
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C2328 transistor C2330 c2330 TRANSISTOR C2328 1B marking transistor c2330 equivalent
Abstract: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - , Current Notes: 1. Transistor mounted on a FR4 printed-circuit board SYMBOL MIN MAX UNIT , -323 3K / 7" Reel 5CR BC807-25W RF G SOT-323 3K / 7" Reel 5CS BC807-40W RF G Taiwan Semiconductor
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S1404006

CD4000B Family specifications

Abstract: CD4001B D, F, K) DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR TA FtJLL PACKAGE TEMPERATURE HANGE (AH Pa , CONNECTION CD4001B CHIP PHOTOGRAPHS Dimensions and Pad Layouts HC = NO CONNECTION CD4002B 5?CS- ?4447R
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CD4000B CD4025B CD4000B Family specifications 5Cs transistor 5cs 58 RCA-CD4000 15-V RCA-CD4000B 92CS-Z4468RI 92CS-2B909 92CS-35060

5Cs transistor

Abstract: 5Cs transistor 5cs 58 Minidip and S08 packages, designed as a controller and driver of a discrete power MOS transistor for the , external power transistor is switched off, until the overvoltage situation disappears. However if the , 3.5v dynamic ovp static ovp D95IN218 Figure 2: Overvoltage Protection Circuit Ccomp. 5CS
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L6560 L6560A L6560D L6560AD D1141 LA-511 B1ET2910A L6560/A

70413080

Abstract: 70473180 SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE , IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-220 TRANSISTOR 2005M , Transistor Summary *NOTICE* When replacing power output devices, our designs do NOT require Banks or that
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70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 2N3391 SPS-953 MPS-8097 2N6520 MPS-A18 2N6539
Abstract: optional. 5. The DC current gain ß of transistor 8050 ranges from 120 to 200. 6. All unused trigger pins , :. 5CS, World Tracte Squaffe, Vcwa:' :i; "¡23 Hol öLiii iîd ., K»Ljn Tc.c'ig, K c w lo c rr Hong K a -
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W5280 W528X S52-27 8SS-3-S770 SSS-2-71

tda 2794

Abstract: pabx state. _PZ7 5CS-THOMSON_ â'¢Tw GuneaseLEeinäeuDes â  7=12^237 GD73317 LÛ2 â  This Material , transistor switches capable of sinking up to 120 mA each. The power to the drivers is derived from the , transistor is pulled out of its linear region. *) Open Loop Detection The open-loop status bit becomes
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STLC5444 PLCC44 tda 2794 pabx BTS 5237 D95TL229 DIP24 D0733E
Abstract: , which are saturated DMOS transistor switches capable of sinking up to 120 mA each. The power to the , Detection ) The low-output-voltage status bit becomes ac­ tive when the output DMOS transistor is , 7T2T237 0D73327 -
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00733ES
Abstract: -VCC U2 AP1681 4-FB D5 6-GND R21 C8 1-DIM 7-OUT 2-RD 3-RI 5-CS R18 R22 R23 , 1 Q3 Transistor, NPN, BC847,SOT-23 1 Z1 Zener 15V, SOD-80 1 R12,R13 The BCD Semiconductor
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old 14 inch colour tv circuit diagram

Abstract: example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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old 14 inch colour tv circuit diagram ST631 ST63126 ST63156 CDIP28 CDIP40 PDIP28

SMD Codes

Abstract: TRANSISTOR SMD T1P critical transition from transistor to thyristor operation does not create local hot spots, which could , transition time from thyristor to transistor operation (i.e. on-state to off-state), which is very important
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
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