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58GH

Catalog Datasheet MFG & Type PDF Document Tags

RF MESFET S parameters

Abstract: TQTRX ) -1 . Gmax (dB) 26.0 Vds = 1.5V @ 1.1GH z Vds = 1.5V @ 2.2GH z Vds = 1.5V @ 5.8GH z , @ 5.8GH z Vds = 3.0V @ 7.9GH z Vds = 3.0V @ 12.1GHz 30 0. -1 . DFET Gmax vs Vgs vs , V ds + 1.5V @ 2.2GH z V ds + 1.5V @ 5.8GH z V ds = 1.5V @ 7.9GH z V ds = 1.5V @ 12.1GH z V ds = 3.0V @ 1.1GH z V ds = 3.0V @ 2.2GH z V ds = 3.0V @ 5.8GH z V ds = 3.0V @ 7.9GH z V ds =
TriQuint Semiconductor
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RF MESFET S parameters TQTRX
Abstract: R EV EDIQÁO INICIAL NOVO CÃ"DIGO -5Q.10 Hr 0 .8 5 - diP s ECN. NO. A B -laomiQ . APP DATE Unit: mm; Tolerances: ±0.15 mm Reference dimension fo r PCB layout -54j.Qtl.Pn o c 4W 0,25-oâ'˜is HOW TO ORDER: ICA6088C[ ]R 1 5. E n v iro n m e n ta l C h a ra c te ris tic s TEC H N IC A L C H A R A C TER IST IC S 3. E le c tric a l C h a ra c te ris tic s 1. G e n e ra l C h a ra c te ris tic s Dim ension: 55.50L x 40.00W x 5.8GH mm W eight: Approx. 10 50 g -
OCR Scan
A6088C 95/EC

MT4S200U

Abstract: 60GHz transistor Collector-Base voltage VCB (V) 20.0 15.0 5.8GH Ga 0.0 0.1 5.8GHz NF 10 Associated Gain Ga , Noise Amplifier Application Unit: mm FEATURES · Low Noise Figure :NF=1.7dB (@f=5.8GHz) · High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P 1 USQ 2 1.Collector 2 , GHz 15.0 17.5 dB 2 VCE=3V, IC=15mA, f=5.8GHz 9.5 dB VCE=3V, IC , ) Insertion Gain VCE=3V, IC=5mA, f=5.8GHz 1.7 dB Min Typ. Max Unit 1
Toshiba
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MT4S200U 60GHz transistor 60Ghz
Abstract: Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) 2.0±0.2 1.3±0.1 3 4 , =2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 25 15.0 Typ. 30 , |2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f=5.8GHz , 5.8GHz 20.0 NF 15.0 2GHz NF 10.0 5.0 VCE=3v Ta=25 1 10 0.0 100 Output Capacitance Cob(pF) 0.35 Toshiba
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MT4S200U

Abstract: Noise Amplifier Application Unit: mm FEATURES · · Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P USQ JEDEC JEITA 1 2 1.Collector 2.Emitter 3 , =2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 15.0 Typ. 30 , |2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f=5.8GHz
Toshiba
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001GH 801GH
Abstract: Noise Amplifier Application Unit: mm FEATURES · · Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P 2 USQ JEDEC JEITA 1 2 1.Collector 2 , =2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 15.0 Typ. 30 , ) |S21e|2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f=5.8GHz Toshiba
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Abstract: Noise Amplifier Application Unit:mm FEATURES · · Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) 2.0±0.2 1.3±0.1 2.1±0.1 1.25±0.1 0.2+0.1 ­0.05 0.15±0.05 3 Marking , =15mA,f=2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 25 15.0 , Gain |S21e|2(dB) 10 8 6 4 2 0 1 10 VCE=3v 30 25 20 15 10 5 0 1 10 f=2GHz Ta=25 100 f=5.8GHz Ta , 5.8GHz 20.0 NF 15.0 2GHz NF 10.0 5.0 VCE=3v Ta=25 1 10 0.0 100 Output Capacitance Cob(pF) 0.35 Toshiba
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Abstract: Noise Amplifier Application Features · · Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Unit: mm Marking 4 3 P 2 USQ 1 2 1.Collector 2.Emitter 3.Base 4 , =2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 15.0 Typ. 30 , ) |S21e|2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f=5.8GHz Toshiba
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FPD6836P70

Abstract: Matching® Applied Ì 22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable Gain to 18GHz GaAs HBT , ) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18GHz) InP HBT RF MEMS LDMOS Parameter Min , specification measured at f=5.8GHz using CW signal (except as noted). RF MICRO DEVICES®, RFMD®, Optimum , Power Transfer Characteristics VDS = 5V IDS = 55mA at f = 5.8GHz , 70.0% 4.00 70.0% 23.0
RF Micro Devices
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FPD6836P70 S21/S12 22A114 J-STD-020C FPD6836P70-AG FPD6836P70-AJ

FPD6836P70

Abstract: FPD6836P70SQ ) optimised for low-noise, high-frequency applications. 22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable , HBT Gain blocks and medium power stages WiMax (2GHz to 11GHz) WLAN 802.11a (5.8GHz , /W *Note: TAMBIENT =22°C, RF specification measured at f=5.8GHz using CW signal (except as noted). , VDS = 5V IDS = 55mA at f = 5.8GHz , Drain Efficien and PAE cy 70.0% 4.00 70.0% 23.0
RF Micro Devices
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FPD6836P70SQ FPD6836P70SR w50 MARKING CODE 0338 transistor 0805X7R fpd6836p FPD6836P70SB DS090612
Abstract: 18.1 ⯠dB VCE=3V, IC=15mA,f=5.8GHz 9.5 11.5 ⯠dB VCE=3V, IC=7mA, f , ) Insertion Gain VCE=3V, IC=7mA,f=5.8GH ⯠1.51 ⯠dB Min Typ. Max Unit â Toshiba
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MT4S301U
Abstract: ML5805 ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA 5.8GHZ VARIABLE , Subsystem IF Subsystem DATASEL F To V RXIN, RXIP 5.8GHz Input SI GN S  Low-IF , 5.8GHz +21dBm Output Fractional-N Synthesizer with 30Hz Resolution TX Subsystem Fully , Subsystem /2  RSSI RSSI Quadrature Generation Highly Integrated 5.8GHz FSK , TX output power at 5.8GHz 5.850 GHz 21 Matched into 50 ±400 Transmit Modulation RF Micro Devices
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DS120607 MO-220

PN20

Abstract: Mixer 5.8GHz ML5805 ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA 5.8GHZ VARIABLE , DATASEL F To V RXIN, RXIP 5.8GHz Input DOUT AOUT Filter Alignment Features Low-IF , Regulation and Power Distribution/ Management TXO 5.8GHz +21dBm Output TX Subsystem -97dBm , RSSI Quadrature Generation Highly Integrated 5.8GHz FSK Transceiver With Selectable Data Rates , TX output power at 5.8GHz 5.850 GHz 21 Matched into 50 ±400 Transmit Modulation
RF Micro Devices
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PN20 Mixer 5.8GHz circuit diagram of bluetooth fm transmitter V1.2 dsss FSK modulation design 5.8GHz Analog RF modulator 5.8ghz pa DS090320

s5850

Abstract: 0x857E ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA ML5805 5.8GHZ VARIABLE DATA , Subsystem RXIN, RXIP 5.8GHz Input IF Subsystem DATASEL F To V Filter Alignment Quadrature Generation RSSI , Synthesizer Subsystem Pulse Shaping 3.9 GHz VCO /2 PLL Divider PFD VTUNE QPO Highly Integrated 5.8GHz FSK , TXO 5.8GHz +21dBm Output TX Subsystem SW_CTRL RXCLK Registers and Mode Control RXON XCEN DATA CLK , output power at 5.8GHz Transmit Modulation Deviation Output Impedance Transmit Filter Bandwidth/Symbol
RF Micro Devices
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s5850 0x857E

5.5 GHz power amplifier

Abstract: HMC223MS8 ideal for use in the UNII & ISM bands at 5.2GHz and 5.8GHz. External component requirements are
Hittite Microwave
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HMC280MS8G HMC223MS8 HMC224MS8 5.5 GHz power amplifier

5100 B3 transmitter

Abstract: 500-SERIES predriver or an LO buffer. The device has been fully characterized and tested in the 5.2GHz and 5.8GHz
Maxim Integrated Products
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MAX2648 MAX2648EBT 500-SERIES 5100 B3 transmitter 5725MH 5825MH 5150MH

ask demodulator

Abstract: ASK DEMODULATOR circuit the size and the number of parts used in the wireless block of onboard 5.8GHz electronic toll
Panasonic
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AN18420A GN7003S ask demodulator ASK DEMODULATOR circuit an1842 VCO 5GHz QFN044-P-0606A 845GH 5815MH 5845MH

UF5800L283

Abstract: UBE UF5800L283 Ube Electronics Limited Product Catalog Title Dielectric Filter Application UN 5.8GHz Filter for UN Band UBE P/N: Center Frequency (Fo) Band Width Insertion Loss V.S.W.R Ripple Attenuation 5425 MHz 5625 MHz 5975 MHz 6175 MHz 11450-11750 MHz Document No. FM-L283-03 Sheet 1/2 UF5800L283 UF5800L283 5800 MHz +/- 75 MHz 2.10 dB 1.82 1.20 dB 34 dB 20 dB 7 dB 31 dB 5 dB , Limited Product Catalog Title Dielectric Filter Application UN 5.8GHz Filter for UN Band
UBE Electronics
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UBE UF5800L283 UBE Electronics 5800MHZ

b 857 W3

Abstract: fpd200p70 Doublers TYPICAL PERFORMANCE: RF PARAMETER SYMBOL CONDITIONS 1.85GHZ 5.8GHZ 18GHZ , at f = 5.8GHz Power Transfer Characteristics VDS = 5V, IDS = 30mA at f = 5.8GHz 60.0% 5.50 , 11 Input Power (dBm) Typical Intermodulation Performance VDS = 5V, IDS = 30mA at f = 5.8GHz , IDS = 30mA at f = 5.8GHz FPD200P70 IP3 Variation over Tempe rature VDS = 5.0V IDS = 30mA at f = 5.8GHz 19.00 18.00 28.00 18.00 19.00 27.00 15.00 14.00 16.00 13.00 12.00
Filtronic
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b 857 W3 transistor marking code 1325 TL11 TL22 filtronic Solid State VG07 EB200P70-AJ 22-A114

MRD 532

Abstract: video transmitter 2.4 GHz ~5.8GHz GVAR Gain variation over band (4.9-5.8 MHz) 5.0 dB Gain variation over band
Silicon Storage Technology
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SST13LP02 MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02-QDF SST13LP02-QDF-K SST13LP022 16F-6 S71304-01-000

tag 265 600

Abstract: R EV EDIQÁO INICIAL NOVO CÃ"DIGO -5Q.10 Hr 0 .8 5 - diP s ECN. NO. A B -laomiQ . APP DATE Unit: mm; Tolerances: ±0.15 mm Reference dimension fo r PCB layout -54j.Qtl.Pn o c 4W 0,25-oâ'˜is HOW TO ORDER: ICA6088C[ ]R 1 5. E n v iro n m e n ta l C h a ra c te ris tic s TEC H N IC A L C H A R A C TER IST IC S 3. E le c tric a l C h a ra c te ris tic s 1. G e n e ra l C h a ra c te ris tic s Dim ension: 55.50L x 40.00W x 5.8GH mm W eight: Approx. 10 50 g
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OCR Scan
tag 265 600 TAG-1030 TLN-1030 TKG-1030
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