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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

55c diode

Catalog Datasheet MFG & Type PDF Document Tags

linfinity

Abstract: MIL-S-19500/474 SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds , ) 898-8121 FAX: (714) 893-2570 DIODE ARRAY SERIES ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown , to the device. Note 2. Applicable for each diode. THERMAL DATA J Package: Thermal
Linfinity Microelectronics
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MIL-S-19500/474 1N5768 1N5770 1N5772 1N5774 SG6508J linfinity linfinity 8 ceramic dip 14 pin dip diode array MIL-S-19500

diode sg 64

Abstract: SG5774AJ , SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds: typically less than 10ns · Low leakage current HIGH RELIABILITY FEATURES , The Silicon General series of diode arrays feature high , SG 64 96 /S G 6 49 6A ! April 1990 8-15 fl2S3flflO QQ0S7QS 7TT S6L DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages
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SG5772J SG5774AJ SG25770J diode sg 64 sf 819 d 1N5772 JANTX SG5768/68A SG5770/70A SG5772/72A 10-PIN SG5770AF SG5770F

linfinity 8 ceramic dip

Abstract: U11H i i N f r v m SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS M I C R O E L E C T R O N I C S DESCRIPTION The Linfinity series of diode arrays feature , -19500 facility. FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast , Western Avenue ·· Garden Grove, CA 92641 (714)898-8121 - FAX (714)893-2570 A2S3AA0 E &4 DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages
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U11H ir U11H SG5770/SG6507 SG5768/SG6506

1N6510 JAN

Abstract: 1N6510 LINFINITY SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The , through diodes. · · · · These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and , 's monolithic construction the diode electrical parameters are very closely matched. HIGH RELIABILITY
Linfinity Microelectronics
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1N6100 1N6101 1N6510 1N6511 1N6510 JAN 1N6510 LINFINITY 14-PIN SG6511J

sg6101

Abstract: SG6101J IlSFMTY M I C R O E L E C T R O N I C S SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and
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SG6101J sg6101 16-PIN

1N6506

Abstract: DIODE ARRAY CIRCUITS DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high , . FEATURES · 60V m inim um breakdown voltage · 500mA current capability per diode · Fast sw itchin g speeds , diode. Operating Junction Temperature Hermetic (J, F Packages , Ambient Temperature Range SG5768 .-55°C to 150°C SG5770 .-55°C to 150°C SG5772
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1N6506 1N6508 1N6509 SGS768/S66506 8G5770/SG6507

silicon general 16 pin ceramic dip J

Abstract: SILICON GENERAL LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG6100/SG6101 DIODE ARRAY CIRCUITS FEATURES · · · · 7SV minimum breakdown voltage 100mA current capability per diode Switching speeds less than 5ns Low leakage current < 25nA DESCRIPTION The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight through diodes, while the SG6101 has 8 straight through diodes. These two diode array
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silicon general 16 pin ceramic dip J D002711 SG6100J SG6100F SG6101F

CA3081

Abstract: CA3082 segment displays, and light emitting diode (LED) displays. These types are also well suited for a variety , Incandescent Displays and Light Emitting Diode (LED) Display · 7 Transistors Permit a Wide Range of , -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C PACKAGE 16 Lead Plastic DIP 16 Lead Ceramic DIP 16 Lead Narrow Body SOIC 16 Lead , 1993 File Number 480.2 b-
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CA3081 CA3082 CA3081F CA3081 HARRIS transistor Common collector configuration DR2000 equivalent DR2000 40736R

66171 PROTON RADIATION TOLERANT OPTOCOUPLER

Abstract: 66171 CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP Input Diode Static Forward Voltage -55°C VF +25°C VF 0.8 Input Diode Static Forward Voltage +100°C VF TEST CONDITIONS µA VR = 2V V IF = 10mA 2.0 , .2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , . -55°C to +100°C Lead Solder Temperature (10 seconds max
Micropac Industries
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66171 PROTON RADIATION TOLERANT OPTOCOUPLER 66171 quad photodiode 4N49 MIL-PRF-38534

4n49 OPTOCOUPLER

Abstract: 66171-100 similar to 4N49) PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage Input Diode Static Forward Voltage -55'C +25°C SYMBOL Ir vf MIN 1.0 0.8 0.7 TYP MAX 100 2.4 , . 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , . -55°C to +100°C Lead Solder Temperature (10 seconds max , 2.0 1.8 Input Diode Static Forward Voltage +100°C OUTPUT TRANSISTOR Ta = 25°C unless otherwise
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4n49 OPTOCOUPLER 66171-100

XR-2012

Abstract: L1342 M O S devices. The input current is limited to a safe value by a Zener diode and resistor in series , C E = 50V TEM PER A TU R E J a = +25° C -55°C , 850 MA IC = 500 mA 1 b = 600 uA IC - 500 mA lB = 1100 /jA Input Current (ON) I|N V|n = 17V ta 55°C ta ta ta = +25°C = +125°C = -55°C 1.6 1.8 V V V V V V V 1.8 t a = +25°C T a = +125°C 1.9 2.1 2.1 T a = -55°C J a = +25°C -55°C
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XR-2012 L1342 XR-2014

3004 diode

Abstract: high power pin diode HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEATURES , 's website: http://www.microsemi.com DO-4 PIN DIODE APPLICATIONS/BENEFITS MRI Applications. High , -55°C to +150°C -55°C to +125 -55°C to +150°C -55°C to +125 -55°C to +150°C -55°C to +125 1.5 1.5 1.5 TSTG TOP RJC °C °C °C/W ELECTRICAL CHARACTERISTICS Parameter Diode , HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C
Microsemi
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HUM3002 HUM3003 HUM3004 3004 diode high power pin diode diode mri power

CA3038

Abstract: ca3039 HARRIS S E M I C O N D U C T O R CA3039 Diode Array Description The CA3039 consists of six , atched M onolithic Construction - V F M atched W ithin 5mV · Low Diode C apacitance - C D = 0.65pF , High Speed Diode Gates · A nalog Sw itches Ordering Information B m CA3039 CA3039M CA3039M96 * Denotes Tape and Reel 55°C to +125°C i 12 Pin CAN 14 Lead SOIC 14 Lead SOIC* -55°C to +125°C -55°C to +125°C Pinouts TOP VIEW CA3039 (SOIC) CA3038 ÌTO-5 CAN) TOP VIEW SUBSTRATE CAUTION: H
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CA3081

Abstract: ca3082 directly driving seven segment displays, and light emitting diode (LED) displays. These types are also well , PACKAGE Applications · -55°C to +125°C CA3O01F CA30B1M CA3081M96 CA3082 CA3082F CA3082M CA3082M96 -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to , TRANSISTOR AND DIODE ARRAYS Specifications CA3081, CA3082 A b so lu te M axim um R atin g s (ta = +25°c , +55°C. Derate Linearly 6.67mW/°C Junction Temperature
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Common collector configuration CA30B1 CA30B2 GA3082

AD592

Abstract: AD7314 ­55°C to +125°C 2.7 V to 5.5 V/0.4 mA 0.90 AD7816 Local Sensor SPI ±2°C, + 25°C ­55°C to +125°C 2.7 V to 5.5 V/2 mA 1.30 8-Lead TSSOP, 8-Lead SOIC, TO-92 5-Lead SC70, 5 , Cancellation I2C/SMBus ADT7461 3.0 V to 5.5 V/1.4 mA 3.25 16-Lead QSOP 2-Channel Thermal Diode , ±1°C, + 25°C ­40°C to +125°C ±1°C, + 25°C ­55°C to +125°C 2.7 V to 5.5 V/0.6 mA 2.7 V to , -Channel External ADC Input and AD7816 AD7818 Local Sensor SPI ±2°C, + 25°C ­55°C to +125°C 2.7 V
Analog Devices
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TMP03 TMP04 TMP05 TMP06 AD7814 AD7414 AD592 AD7314 AD7415 AD7416
Abstract: 5ILICDN LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG5792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic fam ilies For 85V or 125V devices , and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff -
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MIL-STD-883 SG5792J/883B SG5792J

SG2800

Abstract: 14106b interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to , . 500mA Operating Ambient Temperature Range . -55°C to 125°C Note 2. Range over which the , of -55°C T A 125°C. Low duty cycle pulse testing techniques are used which maintains junction and , Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) SG2801 All All All All All Test Conditions VCE = 50V VCE =
Linfinity Microelectronics
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SG2800 JAN2801J JAN2802J JAN2803J JAN2804J 14106b sg2804 MIL-M38510/14106BVA MIL-M38510/14107BVA MIL-M38510/14108BVA

G5792

Abstract: SGS792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic , stage is selt-contained and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff. Forward operation is effected when the input is pulled high. H IG H R E L IA B
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G5792

DARLINGTON ARRAYS

Abstract: a = +25° C -55°C 1c = 500 ß A T A = +25°C -55°C , A TU R E T a = +25 ° c -55°C , SYM BO L IC E X C O N DITIO NS V C E = 50V TEM PER A TU R E T A = +25°C ·55''C < T A < + 1 2
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DARLINGTON ARRAYS

CHT-PMOS30

Abstract: CHT-PMOS3008 , VGS = -5V 2µs pulse, 1.9 225°C = -55°C Unit ns ns ns ns A A A 1 2 Includes ESD diode leakage , 2µs pulse, 3.8 225°C = -55°C Unit ns ns ns ns A A A 3 4 Includes ESD diode leakage current , performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225 , Reverse ESD diode between gate and source. Available in TO254 package Applications Aeronautics , Pulsed drain current IDS (Tpulse 2µs) CHT-PMOS3002: 2.8A @ -55°C 2.5A @ 25°C 1.9A @ 225°C CHT-PMOS3004
CISSOID
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CHT-PMOS30 CHT-PMOS3008 DS-100654
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