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Part : 8N3QV01FG-0055CDI Supplier : Integrated Device Technology Manufacturer : Avnet Stock : - Best Price : $19.0513 Price Each : $23.2915
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Part : CHT-555-CDIL8-T Supplier : CISSOID Manufacturer : Future Electronics Stock : 14 Best Price : $160.50 Price Each : $170.9300
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55c diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds , ) 898-8121 FAX: (714) 893-2570 DIODE ARRAY SERIES ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown , to the device. Note 2. Applicable for each diode. THERMAL DATA J Package: Thermal Linfinity Microelectronics
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MIL-S-19500/474 1N5768 1N5770 1N5772 1N5774 SG6508J linfinity linfinity 8 ceramic dip 14 pin dip diode array MIL-S-19500
Abstract: , SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds: typically less than 10ns · Low leakage current HIGH RELIABILITY FEATURES , The Silicon General series of diode arrays feature high , SG 64 96 /S G 6 49 6A ! April 1990 8-15 fl2S3flflO QQ0S7QS 7TT S6L DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages -
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SG5772J SG5774AJ SG25770J diode sg 64 1N5772 JANTX sf 819 d SG5768/68A SG5770/70A SG5772/72A 10-PIN SG5770AF SG5770F
Abstract: i i N f r v m SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS M I C R O E L E C T R O N I C S DESCRIPTION The Linfinity series of diode arrays feature , -19500 facility. FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast , Western Avenue ·· Garden Grove, CA 92641 (714)898-8121 - FAX (714)893-2570 A2S3AA0 E &4 DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages -
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ir U11H U11H SG5770/SG6507 SG5768/SG6506
Abstract: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The , through diodes. · · · · These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and , 's monolithic construction the diode electrical parameters are very closely matched. HIGH RELIABILITY Linfinity Microelectronics
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1N6100 1N6101 1N6510 1N6511 1N6510 JAN 1N6510 LINFINITY SG6101 SG6100 SG6010 14-PIN SG6511J
Abstract: IlSFMTY M I C R O E L E C T R O N I C S SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and -
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SG6101J 16-PIN
Abstract: DIODE ARRAY CIRCUITS DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high , . FEATURES · 60V m inim um breakdown voltage · 500mA current capability per diode · Fast sw itchin g speeds , diode. Operating Junction Temperature Hermetic (J, F Packages , Ambient Temperature Range SG5768 .-55°C to 150°C SG5770 .-55°C to 150°C SG5772 -
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1N6506 1N6508 1N6509 SGS768/S66506 8G5770/SG6507
Abstract: SILICON GENERAL LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG6100/SG6101 DIODE ARRAY CIRCUITS FEATURES · · · · 7SV minimum breakdown voltage 100mA current capability per diode Switching speeds less than 5ns Low leakage current < 25nA DESCRIPTION The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight through diodes, while the SG6101 has 8 straight through diodes. These two diode array -
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silicon general 16 pin ceramic dip J D002711 SG6100J SG6100F SG6101F
Abstract: segment displays, and light emitting diode (LED) displays. These types are also well suited for a variety , Incandescent Displays and Light Emitting Diode (LED) Display · 7 Transistors Permit a Wide Range of , -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C PACKAGE 16 Lead Plastic DIP 16 Lead Ceramic DIP 16 Lead Narrow Body SOIC 16 Lead , 1993 File Number 480.2 b- -
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CA3081 CA3082 CA3081F CA3081 HARRIS DR2000 equivalent DR2000 40736R
Abstract: CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP Input Diode Static Forward Voltage -55°C VF +25°C VF 0.8 Input Diode Static Forward Voltage +100°C VF TEST CONDITIONS uA VR = 2V V IF = 10mA 2.0 , .2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , . -55°C to +100°C Lead Solder Temperature (10 seconds max Micropac Industries
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66171 4N49 quad photodiode MIL-PRF-38534
Abstract: similar to 4N49) PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage Input Diode Static Forward Voltage -55'C +25°C SYMBOL Ir vf MIN 1.0 0.8 0.7 TYP MAX 100 2.4 , . 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , . -55°C to +100°C Lead Solder Temperature (10 seconds max , 2.0 1.8 Input Diode Static Forward Voltage +100°C OUTPUT TRANSISTOR Ta = 25°C unless otherwise -
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4n49 OPTOCOUPLER 66171-100
Abstract: M O S devices. The input current is limited to a safe value by a Zener diode and resistor in series , C E = 50V TEM PER A TU R E J a = +25° C -55°C , 850 MA IC = 500 mA 1 b = 600 uA IC - 500 mA lB = 1100 /jA Input Current (ON) I|N V|n = 17V ta 55°C ta ta ta = +25°C = +125°C = -55°C 1.6 1.8 V V V V V V V 1.8 t a = +25°C T a = +125°C 1.9 2.1 2.1 T a = -55°C J a = +25°C -55°C -
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L1342 XR-2012 XR-2014
Abstract: HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEATURES , 's website: http://www.microsemi.com DO-4 PIN DIODE APPLICATIONS/BENEFITS MRI Applications. High , -55°C to +150°C -55°C to +125 -55°C to +150°C -55°C to +125 -55°C to +150°C -55°C to +125 1.5 1.5 1.5 TSTG TOP RJC °C °C °C/W ELECTRICAL CHARACTERISTICS Parameter Diode , HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C Microsemi
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HUM3002 HUM3003 HUM3004 3004 diode diode mri power high power pin diode
Abstract: HARRIS S E M I C O N D U C T O R CA3039 Diode Array Description The CA3039 consists of six , atched M onolithic Construction - V F M atched W ithin 5mV · Low Diode C apacitance - C D = 0.65pF , High Speed Diode Gates · A nalog Sw itches Ordering Information B m CA3039 CA3039M CA3039M96 * Denotes Tape and Reel 55°C to +125°C i 12 Pin CAN 14 Lead SOIC 14 Lead SOIC* -55°C to +125°C -55°C to +125°C Pinouts TOP VIEW CA3039 (SOIC) CA3038 ÌTO-5 CAN) TOP VIEW SUBSTRATE CAUTION: H -
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Abstract: directly driving seven segment displays, and light emitting diode (LED) displays. These types are also well , PACKAGE Applications · -55°C to +125°C CA3O01F CA30B1M CA3081M96 CA3082 CA3082F CA3082M CA3082M96 -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to , TRANSISTOR AND DIODE ARRAYS Specifications CA3081, CA3082 A b so lu te M axim um R atin g s (ta = +25°c , +55°C. Derate Linearly 6.67mW/°C Junction Temperature -
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Common collector configuration CA30B1 CA30B2 GA3082
Abstract: ­55°C to +125°C 2.7 V to 5.5 V/0.4 mA 0.90 AD7816 Local Sensor SPI ±2°C, + 25°C ­55°C to +125°C 2.7 V to 5.5 V/2 mA 1.30 8-Lead TSSOP, 8-Lead SOIC, TO-92 5-Lead SC70, 5 , Cancellation I2C/SMBus ADT7461 3.0 V to 5.5 V/1.4 mA 3.25 16-Lead QSOP 2-Channel Thermal Diode , ±1°C, + 25°C ­40°C to +125°C ±1°C, + 25°C ­55°C to +125°C 2.7 V to 5.5 V/0.6 mA 2.7 V to , -Channel External ADC Input and AD7816 AD7818 Local Sensor SPI ±2°C, + 25°C ­55°C to +125°C 2.7 V Analog Devices
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TMP03 TMP04 TMP05 TMP06 AD7814 AD7414 AD592 Silicon temperature sensors G04268-1
Abstract: 5ILICDN LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG5792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic fam ilies For 85V or 125V devices , and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff -
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MIL-STD-883 SG5792J/883B SG5792J
Abstract: interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to , . 500mA Operating Ambient Temperature Range . -55°C to 125°C Note 2. Range over which the , of -55°C T A 125°C. Low duty cycle pulse testing techniques are used which maintains junction and , Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) SG2801 All All All All All Test Conditions VCE = 50V VCE = Linfinity Microelectronics
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SG2800 JAN2801J JAN2802J JAN2803J JAN2804J 14106b sg2804 MIL-M38510/14106BVA MIL-M38510/14107BVA MIL-M38510/14108BVA
Abstract: SGS792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic , stage is selt-contained and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff. Forward operation is effected when the input is pulled high. H IG H R E L IA B -
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G5792
Abstract: a = +25° C -55°C 1c = 500 ß A T A = +25°C -55°C , A TU R E T a = +25 ° c -55°C , SYM BO L IC E X C O N DITIO NS V C E = 50V TEM PER A TU R E T A = +25°C ·55''C < T A < + 1 2 -
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DARLINGTON ARRAYS
Abstract: , VGS = -5V 2us pulse, 1.9 225°C = -55°C Unit ns ns ns ns A A A 1 2 Includes ESD diode leakage , 2us pulse, 3.8 225°C = -55°C Unit ns ns ns ns A A A 3 4 Includes ESD diode leakage current , performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225 , Reverse ESD diode between gate and source. Available in TO254 package Applications Aeronautics , Pulsed drain current IDS (Tpulse 2us) CHT-PMOS3002: 2.8A @ -55°C 2.5A @ 25°C 1.9A @ 225°C CHT-PMOS3004 CISSOID
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CHT-PMOS30 CHT-PMOS3008 DS-100654
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