NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Current (Diode Conduction)a "3.1 IDM TA = 70_C Pulsed Drain Current 1.25 Unit V �25 , 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltageb VDS w �V, VGS = � V P-Ch � N-Ch 0.043 0.065 VGS = � V, ID = , Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source , Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ... | Original |
6 pages, |
Si6543DQ S-47958-Rev 55c diode Si6543DQ abstract |
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| Abstract: Range "2.1 "20 "20 IS Continuous Source Current (Diode Conduction)a "3.1 IDM TA , 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch � N-Ch 0.043 0.065 VGS = � V, ID = , Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source , Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � ... | Original |
6 pages, |
Si6543DQ S-49534 Si6543DQ abstract |
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| Abstract: � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode , Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction , (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage , ) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � Source Current (A) 10 TJ = ... | Original |
6 pages, |
Si4532DY Si4532DY abstract |
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| Abstract: 1 VDS = � V, VGS = 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch 20 N-Ch 0.027 , Continuous Source Current (Diode Conduction)a "3.2 IDM TA = 70_C Pulsed Drain Current 1.25 , ) 3 New Product Si6544DQ Si6544DQ Typical Characteristics (25_C Unless Noted) Source-Drain Diode , Si6544DQ Si6544DQ Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage 10 ... | Original |
6 pages, |
Si6544DQ Si6544DQ abstract |
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| Abstract: V, VGS = 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch � N-Ch 0.043 0.065 , Range "2.1 "20 "20 IS Continuous Source Current (Diode Conduction)a "3.1 IDM TA , (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage , ) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � Source Current (A) 10 TJ = ... | Original |
6 pages, |
Si6543DQ Si6543DQ abstract |
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| Abstract: 1 VDS = � V, VGS = 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch � N-Ch 0.043 , Range "2.1 "20 "20 IS Continuous Source Current (Diode Conduction)a "3.1 IDM TA , Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. , ) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � Source Current (A) 10 TJ = ... | Original |
6 pages, |
Si6543DQ Si6543DQ abstract |
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| Abstract: Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C ID Unit V , 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch � N-Ch 0.043 0.065 VGS = � V, ID = , ) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 N-Channel , Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � Source Current (A) 10 TJ = 150_C ... | Original |
6 pages, |
Si4532DY Si4532DY abstract |
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| Abstract: 1 VDS = � V, VGS = 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea VDS w �V, VGS = � V P-Ch � N-Ch 0.043 , Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C ID Unit V , Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. , Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ... | Original |
6 pages, |
SI4532DY Si4532DY Si4532DY abstract |
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| Abstract: Current (Diode Conduction)a "3.1 IDM TA = 70_C Pulsed Drain Current 1.25 V A �25 , 0 V P-Ch � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode Forward Voltagea gfs VSD P-Ch � N-Ch 0.043 0.065 VGS = � V, ID = 2.5 A , NOTED) NCHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage , Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL Source-Drain Diode Forward Voltage ... | Original |
6 pages, |
Si6543DQ S-49534 Si6543DQ abstract |
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| Abstract: � VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 25 VDS = � V, VGS = 0 V, TJ = 55_C Diode , Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction , Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source , Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage rDS(on) � On-Resistance ( W ) I S � ... | Original |
6 pages, |
Si4532DY Si4532DY abstract |
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| * * *# .SUBCKT BZV55-C18 1 2 * *The resistor R1 and the diode2 do not reflect *physical devices but improve *only modeling in the reverse *mode of operation. * R1 1 2 1.6E+011 D1 1 2 BZV55-C18 * .MODEL BZV55-C18 D + IS = 1.65E-012 65E-012 65E-012 65E-012 + N = 1.35 + BV = 17.78 + IBV = 1.761E-009 761E-009 761E-009 761E-009 * * * *BZV55-C18 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 1,5A @ tp = 100us *VZmax = 19 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZV55_C18.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| PSpice Model of Zener Diode BZM55C2V4 -Model is valid for room temperature- * VISHAY Semiconductor GmbH * Claus Mähner, November-2005 * * .SUBCKT BZM55C2V4 a c * DF a c DFOR DR1 c a DREV1 DR2 c a DREV2 * .MODEL DFOR D + IS=5E-15 5E-15 5E-15 5E-15 + N=1.05 + ISR=3E-11 3E-11 3E-11 3E-11 + NR=1.7 + RS=.075 + CJO=274E-12 274E-12 274E-12 274E-12 + M=.283 + VJ=.479 + TT=2.05E-7 05E-7 05E-7 05E-7 * .MODEL DREV1 D + IS=1E-10 1E-10 1E-10 1E-10 + N=4 + IKF=50E-6 50E-6 50E-6 50E-6 + CJO=.1E BZM55C2V4 www.datasheetarchive.com/files/vishay/docs/85278/bzm55c2v.txt |
Vishay | 13/01/2010 | 0.51 Kb | TXT | bzm55c2v.txt |
| * * *# .SUBCKT BZV55C43 1 2 * *The resistor R1 and the diode D2 do not reflect *physical devices but improve *only modeling in the reverse *mode of operation. * R1 1 2 5E+011 D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS = 2E-012 2E-012 2E-012 2E-012 + N = 1.35 + BV = 42.17 + IBV = 6.51E-010 51E-010 51E-010 51E-010 + RS = 0.5 + CJO = 1.661E * * * *BZV55-C43 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,6A @ tp = 100us *VZmax = 46 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZV55C43.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * *# .SUBCKT BZV55-C27 1 2 * *The resistor R1 and the diode D2 do not reflect *physical devices but improve *only modeling in the reverse *mode of operation. * R1 1 2 5E+011 D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS = 2E-012 2E-012 2E-012 2E-012 + N = 1.36 + BV = 26.61 + IBV = 5.351E-010 351E-010 351E-010 351E-010 + RS = 0.5 + CJO = 1.717E * * * *BZV55-C27 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 1,0A @ tp = 100us *VZmax = 28 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZV55_C27.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * *# .SUBCKT BZV55-C47 1 2 * *The resistor R1 and the diode D2 do not reflect *physical devices but improve *only modeling in the reverse *mode of operation. * R1 1 2 5E+011 D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS = 8E-013 8E-013 8E-013 8E-013 + N = 1.3 + BV = 45.97 + IBV = 3.477E-010 477E-010 477E-010 477E-010 + RS = 0.3 + CJO = 1.682E * * * *BZV55-C47 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,5A @ tp = 100us *VZmax = 50 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZV55_C47.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * *# .SUBCKT BZV55-C33 1 2 * *The resistor R1 and the diode D2 do not reflect *physical devices but improve *only modeling in the reverse *mode of operation. * R1 1 2 5E+011 D1 1 2 + DIODE1 D2 1 2 + DIODE2 .MODEL DIODE1 D + IS = 2E-012 2E-012 2E-012 2E-012 + N = 1.35 + BV = 32.55 + IBV = 4.29E-010 29E-010 29E-010 29E-010 + RS = 0.5 + CJO * * * *BZV55-C33 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,9A @ tp = 100us *VZmax = 35 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZV55_C33.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| 4728A General purpose zener diodes 1 500 1000@Ttp/Tamb max. 50/55°C (mW) SOD66 (DO-41 DO-41 DO-41 DO-41) appr. 5 3.3 1N4729A 1N4729A 1N4729A 1N4729A General purpose zener diodes 1 500 1000@Ttp/Tamb max. 50/55°C (m /Tamb max. 50/55°C (mW) SOD66 (DO-41 DO-41 DO-41 DO-41) appr. 5 3.9 1N4731A 1N4731A 1N4731A 1N4731A General purpose zener diodes 1 zener diodes 1 500 1000@Ttp/Tamb max. 50/55°C (mW) SOD66 (DO-41 DO-41 DO-41 DO-41) appr. 5 4.7 1N4733A 1N4733A 1N4733A 1N4733A General purpose zener diodes 1 500 1000@Ttp/Tamb max. 50/55°C (mW) SOD66 (DO-41 DO-41 DO-41 DO-41) appr. 5 5 www.datasheetarchive.com/files/philips/pip/1n4728a_1.html |
Philips | 23/04/2003 | 19.67 Kb | HTML | 1n4728a_1.html |
| zener diodes 1 250 250@Ttp/Tamb max. 25°C (mW) 10@Tj=55°C and tp max.=8.3ms (W) SOT23 (SST3 zener diodes 1 250 250@Ttp/Tamb max. 25°C (mW) 10@Tj=55°C and tp max.=8.3ms (W) SOT23 (SST3 zener diodes 1 250 250@Ttp/Tamb max. 25°C (mW) 10@Tj=55°C and tp max.=8.3ms (W) SOT23 (SST3 zener diodes 1 250 250@Ttp/Tamb max. 25°C (mW) 10@Tj=55°C and tp max.=8.3ms (W) SOT23 (SST3 zener diodes 1 250 250@Ttp/Tamb max. 25°C (mW) 10@Tj=55°C and tp max.=8.3ms (W) SOT23 (SST3 www.datasheetarchive.com/files/philips/pip/pmbz5226b_3.html |
Philips | 23/04/2003 | 22.67 Kb | HTML | pmbz5226b_3.html |
| -B10 General purpose zener diodes 1 250 500@Ttp/Tamb max. 50/55°C (mW) 40@Tj=25°C and tp BZV55-B12 BZV55-B12 BZV55-B12 BZV55-B12 General purpose zener diodes 1 250 500@Ttp/Tamb max. 50/55°C (mW) 40@Tj=25°C and BZV55-B15 BZV55-B15 BZV55-B15 BZV55-B15 General purpose zener diodes 1 250 500@Ttp/Tamb max. 50/55°C (mW) 40@Tj=25°C and BZV55-B18 BZV55-B18 BZV55-B18 BZV55-B18 General purpose zener diodes 1 250 500@Ttp/Tamb max. 50/55°C (mW) 40@Tj=25°C and BZV55-B22 BZV55-B22 BZV55-B22 BZV55-B22 General purpose zener diodes 1 250 500@Ttp/Tamb max. 50/55°C (mW) 40@Tj=25°C and www.datasheetarchive.com/files/philips/pip/bzv55_3.html |
Philips | 23/04/2003 | 54.68 Kb | HTML | bzv55_3.html |
| W) < = > @Ttp/Tamb max. 25°C (mW) (10) @Ttp/Tamb max. 50/55°C (mW) (4) @ (2) I F ) < = > @Tj=25°C and tp max.=0.1ms (W) (6) @ (2) @Tj=150°C and tp max.=0.1ms (W) (2) @Tj=55°C and Philips Semiconductors; Interactive Selectionguides of Zener diodes Avalanche regulator diodes (2) ESD protection (3) General purpose zener diodes (11) Medium power zener diodes (2) Zener diodes (SOT663) (1) Zener power diodes and transient voltage suppressors www.datasheetarchive.com/files/philips/selectionguides/tables/30910_i.html |
Philips | 15/04/2003 | 20.82 Kb | HTML | 30910_i.html |