500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey Buy

55c+diode

Catalog Datasheet MFG & Type PDF Document Tags

MIL-S-19500/474

Abstract: linfinity SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds , ) 898-8121 FAX: (714) 893-2570 DIODE ARRAY SERIES ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown , to the device. Note 2. Applicable for each diode. THERMAL DATA J Package: Thermal
Linfinity Microelectronics
Original
MIL-S-19500/474 1N5768 1N5770 1N5772 1N5774 SG6508J linfinity linfinity 8 ceramic dip 14 pin dip diode array MIL-S-19500

diode sg 64

Abstract: SG5774AJ , SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast switching speeds: typically less than 10ns · Low leakage current HIGH RELIABILITY FEATURES , The Silicon General series of diode arrays feature high , SG 64 96 /S G 6 49 6A ! April 1990 8-15 fl2S3flflO QQ0S7QS 7TT S6L DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages
-
OCR Scan
SG5772J SG5774AJ SG25770J diode sg 64 1N5772 JANTX sf 819 d SG5768/68A SG5770/70A SG5772/72A 10-PIN SG5770AF SG5770F

ir U11H

Abstract: linfinity 8 ceramic dip i i N f r v m SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS M I C R O E L E C T R O N I C S DESCRIPTION The Linfinity series of diode arrays feature , -19500 facility. FEATURES · 60V minimum breakdown voltage · 500mA current capability per diode · Fast , Western Avenue ·· Garden Grove, CA 92641 (714)898-8121 - FAX (714)893-2570 A2S3AA0 E &4 DIODE , diode. Operating Junction Temperature Hermetic (J, F Packages
-
OCR Scan
ir U11H U11H SG5770/SG6507 SG5768/SG6506

1N6510 JAN

Abstract: 1N6510 LINFINITY SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The , through diodes. · · · · These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and , 's monolithic construction the diode electrical parameters are very closely matched. HIGH RELIABILITY
Linfinity Microelectronics
Original
1N6100 1N6101 1N6510 1N6511 1N6510 JAN 1N6510 LINFINITY SG6101 SG6100 SG6010 14-PIN SG6511J

sg6101

Abstract: SG6101J IlSFMTY M I C R O E L E C T R O N I C S SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and
-
OCR Scan
SG6101J 16-PIN

1N6506

Abstract: DIODE ARRAY CIRCUITS DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high , . FEATURES · 60V m inim um breakdown voltage · 500mA current capability per diode · Fast sw itchin g speeds , diode. Operating Junction Temperature Hermetic (J, F Packages , temperature of TA= 25"C for each diode. Low duty cycle pulse testing techniques are used which maintains , ^ove. C A 92841 (714) 893-8121 ~ P A X '(714) 893-25^0 DIODE ARRAY SERIES ELECTRICAL
-
OCR Scan
1N6506 1N6508 1N6509 SGS768/S66506 8G5770/SG6507

silicon general 16 pin ceramic dip J

Abstract: SILICON GENERAL LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG6100/SG6101 DIODE ARRAY CIRCUITS FEATURES · · · · 7SV minimum breakdown voltage 100mA current capability per diode Switching speeds less than 5ns Low leakage current < 25nA DESCRIPTION The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight through diodes, while the SG6101 has 8 straight through diodes. These two diode array
-
OCR Scan
silicon general 16 pin ceramic dip J D002711 SG6100J SG6100F SG6101F

CA3081

Abstract: CA3082 segment displays, and light emitting diode (LED) displays. These types are also well suited for a variety , Incandescent Displays and Light Emitting Diode (LED) Display · 7 Transistors Permit a Wide Range of , 1993 File Number 480.2 b- , the CA3081 and CA3082 is isolated from the substrate by an integral diode. The substrate must be , Voltage V f = Forward Voltage Drop Across the Diode F1GURE5. SCHEMATIC DIAGRAM SHOWING ONE TRANSISTOR
-
OCR Scan
CA3081F CA3081 HARRIS DR2000 equivalent transistor Common collector configuration DR2000 40736R

66171 PROTON RADIATION TOLERANT OPTOCOUPLER

Abstract: 66171 .2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP Input Diode Static Forward Voltage -55°C VF +25°C VF 0.8 Input Diode Static Forward Voltage +100°C VF TEST CONDITIONS uA VR = 2V V IF = 10mA 2.0 , UNITS 2.4 1.0 Input Diode Static Forward Voltage MAX 100 IR NOTE IC = 100uA, IB =
Micropac Industries
Original
66171 PROTON RADIATION TOLERANT OPTOCOUPLER 66171 4N49 quad photodiode MIL-PRF-38534

4n49 OPTOCOUPLER

Abstract: 66171-100 . 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1 , similar to 4N49) PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage Input Diode Static Forward Voltage -55'C +25°C SYMBOL Ir vf MIN 1.0 0.8 0.7 TYP MAX 100 2.4 , 2.0 1.8 Input Diode Static Forward Voltage +100°C OUTPUT TRANSISTOR Ta = 25°C unless otherwise , together and with both input diode leads shorted together. 2. This parameter must be measured using pulse
-
OCR Scan
4n49 OPTOCOUPLER 66171-100

L1342

Abstract: XR-2012 M O S devices. The input current is limited to a safe value by a Zener diode and resistor in series , 500 mA UJ II Clamp Diode Leakage Current Claim Diode Forward Voltage | r V r = 50V T , E = 2V IC = 300 mA V CE = 2V IC = 500 mA Clamp Diode Leakage Current Claim Diode Forward , mA > > CN II LU IC CJ = 500 mA Clamp Diode Leakage.Current Claim Diode Forward
-
OCR Scan
L1342 XR-2012 XR-2014

3004 diode

Abstract: diode mri power HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEATURES These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low , 's website: http://www.microsemi.com DO-4 PIN DIODE APPLICATIONS/BENEFITS MRI Applications. High , 1.5 1.5 1.5 TSTG TOP RJC °C °C °C/W ELECTRICAL CHARACTERISTICS Parameter Diode , HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C
Microsemi
Original
HUM3002 HUM3003 HUM3004 3004 diode diode mri power high power pin diode

CA3038

Abstract: ca3039 HARRIS S E M I C O N D U C T O R CA3039 Diode Array Description The CA3039 consists of six , atched M onolithic Construction - V F M atched W ithin 5mV · Low Diode C apacitance - C D = 0.65pF , High Speed Diode Gates · A nalog Sw itches Ordering Information B m CA3039 CA3039M CA3039M96 , AND DIODE ARRAYS Specifications CA3039 Absolute Maximum Ratings Inverse Voltage (PIV) for: D, - , Diode U n it. 100mW Total for Device
-
OCR Scan
CA3038

CA3081

Abstract: ca3082 directly driving seven segment displays, and light emitting diode (LED) displays. These types are also well , TRANSISTOR AND DIODE ARRAYS Specifications CA3081, CA3082 A b so lu te M axim um R atin g s (ta = +25°c , and GA3082 is isolated from the substrata by an integral diode. The substrate must be connected to a , 6-23 TRANSISTOR AND DIODE ARRAYS
-
OCR Scan
Common collector configuration CA30B1 CA30B2 CA3O01F CA30B1M CA3081M96 CA3082F

AD592

Abstract: TMP05 Cancellation I2C/SMBus ADT7461 3.0 V to 5.5 V/1.4 mA 3.25 16-Lead QSOP 2-Channel Thermal Diode , mA 3.50 16-Lead QSOP 1-Channel Thermal Diode Monitor and 6 Voltage Inputs ADM1032 , +100°C 2.8 V to 5.5 V/1.4 mA 3.25 24-Lead QSOP 2-Channel Thermal Diode Monitor and 8 Voltage , -Channel Thermal Diode Monitor and Fan Control, 7 GPIOs ADT7460 Remote and Local Sensor with Voltage , 3.3 V to 5 V/3 mA 2.80 16-Lead QSOP ±1°C, Single-Channel, Remote Thermal Diode Monitor with
Analog Devices
Original
TMP03 TMP04 TMP05 TMP06 AD7814 AD7414 AD592 Silicon temperature sensors G04268-1
Abstract: 5ILICDN LINEAR INTEGRATED CIRCUITS ADVANCED DATA SHEET SG5792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic fam ilies For 85V or 125V devices , and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff -
OCR Scan
MIL-STD-883 SG5792J/883B SG5792J

14106b

Abstract: SG2800 Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) SG2801 All All All All All Test Conditions VCE = 50V VCE = , Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) Temp. Limits Units Min. Typ. Max. 100 uA 500 uA 500 uA 1.8 , (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp
Linfinity Microelectronics
Original
SG2800 JAN2801J JAN2802J JAN2803J JAN2804J 14106b sg2804 MIL-M38510/14106BVA MIL-M38510/14107BVA MIL-M38510/14108BVA

G5792

Abstract: SGS792 QUAD PIN DIODE DRIVER FEATURES · · · · · · · Four independent PIN diode drivers 50 volts reverse bias 300mA forward current Fast diode turnoff Shorted diode protection Compatible with most logic , stage is selt-contained and protected against diode shorts, requiring only a single resistor for determining diode forward current. Reverse operation provides high transient switch ing current capability for fast diode turnoff. Forward operation is effected when the input is pulled high. H IG H R E L IA B
-
OCR Scan
G5792

DARLINGTON ARRAYS

Abstract: a = +25° C -55°C 1c = 500 ß A , 2.0 2.0 V V V ßA ßA V V Clamp Diode Leakage Current Clamp Diode Forward Voltage !r V R = , 0 m A UJ UJ II II O > CM Clamp Diode Leakage Current Clamp Diode Forward Voltage
-
OCR Scan
DARLINGTON ARRAYS

CHT-PMOS30

Abstract: CHT-PMOS3008 Reverse ESD diode between gate and source. Available in TO254 package Applications Aeronautics , , VGS = -5V 2us pulse, 1.9 225°C = -55°C Unit ns ns ns ns A A A 1 2 Includes ESD diode leakage , 2us pulse, 3.8 225°C = -55°C Unit ns ns ns ns A A A 3 4 Includes ESD diode leakage current , ESD diode leakage current. Voltage for which the cut-off current evolution versus VDS becomes , diode leakage current vs. temperature (VG = -5V, VD = -50mV) PUBLIC Doc. DS-100654 V1.3 5 of 9
CISSOID
Original
CHT-PMOS30 CHT-PMOS3002 CHT-PMOS3008 CHT-PMOS3004
Showing first 20 results.