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528bytes

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: '¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'" 512-Bytes per Page â'" 528-Bytes , '" Intelligent Programming Operation â'" 4,096 Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options , Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) â'" Allows Receiving of Data while , organized as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a Adesto Technologies
Original
512-B 528-B 512-/528-B 128-K 3500N 3500O
Abstract: '¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'" 512-Bytes per Page â'" 528-Bytes , '" Intelligent Programming Operation â'" 4,096 Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options , Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) â'" Allows Receiving of Data while , frequencies up to 66MHz. Its 17,301,504-bits of memory are organized as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes Atmel
Original

atmel 528

Abstract: 3500B · · · · · · · · · ­ 512-Bytes per Page ­ 528-Bytes per Page ­ Page Size Can Be , Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512-Bytes) ­ Block Erase (4-Kbytes) ­ Sector Erase (128-Kbytes) ­ Chip Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes , ,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a page in
Atmel
Original
atmel 528 3500B JEP106 PA10 PA11
Abstract: '¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'" 512-Bytes per Page â'" 528-Bytes , '" Intelligent Programming Operation â'" 4,096 Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options , Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) â'" Allows Receiving of Data while , pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a page in the main Adesto Technologies
Original
3500P

SAMSUNG 256Mb NAND Flash Qualification Reliability

Abstract: TwB 75 market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation , x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits , 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-bytes data , 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register , or sequential data-reading as shown below. The internal 528bytes page registers are utilized as
Samsung Electronics
Original
K9T1G08U0M K9T1G08U0M-Y K9T1G08U0M-V SAMSUNG 256Mb NAND Flash Qualification Reliability TwB 75 Samsung Flash

K9T1G08U0M-V

Abstract: K9T1G08U0M-VCB0 market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation , Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes , 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodating data transfer , 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0
Samsung Electronics
Original

SAMSUNG 256Mb NAND Flash Qualification Reliability

Abstract: K9T1G08B0M-FCB0 mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an , 528 Bytes 1 Block = 528 Bytes x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 , 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodating data transfer , 31 Page 30 Page 31 Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register Preliminary FLASH MEMORY
Samsung Electronics
Original
K9T1G08B0M-FCB0 K9T1G08B0M K9T1G08B0M-Y K9T1G08B0M-V

K9T1G08U0M

Abstract: K9T1G08U0M-V the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes , sixteen columns are located from column address of 512 to 527. A 528-bytes data register is connected to , 1 Page 30 Page 31 Page 30 Page 31 Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register FLASH
Samsung Electronics
Original

K9T1G08U0M-YCB0

Abstract: K9T1G08U0M the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , ) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes) 8 bits 512Bytes , (pages) by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-bytes , 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register , be inactive during the data-loading or sequential data-reading as shown below. The internal 528bytes
Samsung Electronics
Original
Abstract: the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , 528 Bytes x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits 8 , are located from column address of 512 to 527. A 528-bytes data register is connected to memory cell , Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 K9T1G08U0M ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any Samsung Electronics
Original

ATMEL 1212

Abstract: AT45DB321D-SU Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O , ,224-bytes Block Architecture SECTOR 1 2. Buffer 2 (512-/528-bytes) PAGE 14 PAGE 15 , Block = 4,096-/4,224-bytes PAGE 8,190 PAGE 8,191 Page = 512-/528-bytes Atmel AT45DB321D 3597Q , using multiple page erase commands. To perform a block erase for the standard DataFlash page size (528-bytes
Atmel
Original
ATMEL 1212 AT45DB321D-SU PA126 PA12
Abstract: current of < 60mA Embedded 8-bit BCH ECC - 8bits/528bytes - 15bits/538bytes Flash Interface - Silicon Motion
Original
SM2672 45MB/ 40MB/

AT45DB321D-SU

Abstract: '"DFLASHâ'"6/11 3 Figure 1-2. Block Diagram Flash Memory Array WP Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O Interface SI SO Memory Array To , . Buffer 2 (512-/528-bytes) PAGE 14 PAGE 15 BLOCK 126 PAGE 16 BLOCK 127 PAGE 17 BLOCK 128 , Page = 512-/528-bytes Atmel AT45DB321D 3597Qâ'"DFLASHâ'"6/11 4 3. Device Operation The , erase commands. To perform a block erase for the standard DataFlash page size (528-bytes), an opcode of
Atmel
Original
Abstract: WP Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O , ,224-bytes Block Architecture SECTOR 1 2. Buffer 2 (512-/528-bytes) PAGE 14 PAGE 15 , Block = 4,096-/4,224-bytes PAGE 8,190 PAGE 8,191 Page = 512-/528-bytes AT45DB321D [DATASHEET , page size (528-bytes), an opcode of 50H must be loaded into the device, followed by three address Adesto Technologies
Original
3597R

Toshiba emmc

Abstract: current of < 35μA - Typical card operation current of < 20mA Embedded 8-bit BCH ECC - 8bits/528bytes
Silicon Motion
Original
Toshiba emmc SM2671 22MB/ 18MB/
Abstract: Typical card operation current of Silicon Motion
Original
SM2681

001H

Abstract: 32-PIN as 16,384 sectors of 528-bytes (4,224 bits) each, as shown in Figure 3. The block size of the device , Sector to SRAM and Read SRAM commands. Data can be written to the Flash memory array one sector (528-bytes , 16320 3FD0H 64M-bit Serial Flash Memory Array 16,384 Sectors of 528-Bytes each. Organized in 256 , the SPI bus. When the command sequence has been completed, the entire 528-bytes is written to the , 528-bytes, a single byte, or a sequence of bytes can be read from, or written to the SRAM. This
NexFlash Technologies
Original
NXSF032A-0502 001H 32-PIN NX25F641C 64M-BIT NX25F641C-3T
Abstract: be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical , Device = 528Bytes x 32Pages x 16,384 Blocks = 2,112 Mbits (=256 Bytes) 8 bits 512Bytes 16 , are located from column address of 512 to 527. A 528-bytes data register is connected to memory cell , . The internal 528bytes page registers are utilized as separate buffers for this operation and the , normal read operation with "00h" command and the address of the source page moves the whole 528bytes data Samsung Electronics
Original
K9E2G08B0M K9E2G08B0M-Y K9E2G08B0M-V
Abstract: '"DFLASHâ'"11/2013 3 Figure 1-2. Block Diagram Flash Memory Array WP Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O Interface SI SO Memory Array To , . Buffer 2 (512-/528-bytes) Page 14 Page 15 Block 30 Page 16 Block 31 Page 17 Block 32 , page erase commands. To perform a block erase for the standard DataFlash page size (528-bytes), an Adesto Technologies
Original
AT45DB321E 3597T

25f080

Abstract: 25F160 sectors of 528-bytes (4,224 bits) each, as shown in Figure 3. The block size of the device is 64 sectors , to the Flash memory array one sector (528-bytes) at a time through the Serial SRAM using a Write to , -bit, 16M-bit, or 32M-bit Serial Flash Memory Array 2048, 4096 and 8192 Byte-Addressable Sectors of 528-Bytes , command sequence has been completed, the entire 528-bytes is written to the selected sector. See Erase/Write cycle timing (tWP). The SRAM is fully byte-addressable. Thus, the entire 528-bytes, a single
NexFlash Technologies
Original
NX25F160C NXSF029A-1201 25f080 25F160 32 megabit serial flash 0000-037F 25F320 25F08 NX25F080C NX25F320C 16M-BIT 32M-BIT
Abstract: '¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'" 512-Bytes per Page â'" 528-Bytes , '" Intelligent Programming Operation â'" 4,096 Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options , Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) â'" Allows Receiving of Data while , organized as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a Atmel
Original
3597C
Abstract: Page (512-/528-bytes) Buffer 1 (512-/528-bytes) SCK CS RESET VCC GND RDY/BUSY I/O , ,224-bytes Block Architecture SECTOR 1 2. Buffer 2 (512-/528-bytes) PAGE 14 PAGE 15 , Block = 4,096-/4,224-bytes PAGE 8,190 PAGE 8,191 Page = 512-/528-bytes Atmel AT45DB321D 3597Q , using multiple page erase commands. To perform a block erase for the standard DataFlash page size (528-bytes Atmel
Original
3597D

AT45DB161E-MHD-T

Abstract: atmel 821 '¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'" 512-Bytes per Page â'" 528-Bytes , '" Intelligent Programming Operation â'" 4,096 Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options , Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) â'" Allows Receiving of Data while , frequencies up to 66MHz. Its 17,301,504-bits of memory are organized as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes
Atmel
Original
AT45DB161E AT45DB161E-MHD-T atmel 821 AT45DB161E-SHD AT45DB161E-MHD-Y AT45DB161E-MHF AT45DB161E-MHF-Y 512-K 128KB
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