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528bytes

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Abstract: · · · · · · · · · ­ 512-Bytes per Page ­ 528-Bytes per Page ­ Page Size Can Be , Pages (512-/528-Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512-Bytes) ­ Block Erase (4-Kbytes) ­ Sector Erase (128-Kbytes) ­ Chip Erase (16-Mbits) Two SRAM Data Buffers (512-/528-Bytes) ­ , ,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a page in ... Original
datasheet

51 pages,
1775.04 Kb

PA11 PA10 JEP106 AT45DB161D datasheet abstract
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Abstract: market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can , x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits , 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-bytes data , 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register , or sequential data-reading as shown below. The internal 528bytes page registers are utilized as ... Original
datasheet

38 pages,
877.41 Kb

K9T1G08U0M-Y K9T1G08U0M-V K9T1G08U0M TwB 75 K9T1G08U0M abstract
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Abstract: the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , 528 Bytes x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits 8 , are located from column address of 512 to 527. A 528-bytes data register is connected to memory cell , Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 K9T1G08U0M K9T1G08U0M ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any ... Original
datasheet

38 pages,
877.24 Kb

K9T1G08U0M K9T1G08U0M abstract
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Abstract: the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes) 8 bits , located from column address of 512 to 527. A 528-bytes data register is connected to memory cell arrays , Page 31 Page 30 Page 31 Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register FLASH MEMORY ... Original
datasheet

38 pages,
874.49 Kb

K9T1G08U0M-Y K9T1G08U0M-V K9T1G08U0M K9T1G08U0M abstract
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Abstract: mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an , 528 Bytes 1 Block = 528 Bytes x 32 Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 , 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodating data transfer , Page 31 Page 30 Page 31 Page 30 Page 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register Preliminary FLASH ... Original
datasheet

38 pages,
886.9 Kb

K9T1G08B0M K9T1G08B0M abstract
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Abstract: as 4096 sectors of 528-bytes (4,224 bits) each, as shown in Figure 3. The block size of the device , Flash memory array one sector (528-bytes) at a time through the Serial SRAM using a Write to Sector , of 528-Bytes each. Organized in 64 blocks of 64 sectors per block. Block 0 Sector 63 002FH 002FH , been completed, the entire 528-bytes is written to the selected sector. See Erase/Write cycle timing (tWP). The SRAM is fully byte-addressable. Thus, the entire 528-bytes, a single byte, or a sequence ... Original
datasheet

25 pages,
398.01 Kb

NXSF028A-1101 NX25F160C latch 74H 25F640 25F160 16 megabit serial flash 001H TSOP 28 SPI memory Package flash 16M-BIT NX25F160C abstract
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Abstract: organized as 16,384 sectors of 528-bytes (4,224 bits) each, as shown in Figure 3. The block size of the , one sector (528-bytes) at a time through the Serial SRAM using a Write to Sector command or a , 527 20FH Sector 16320 3FD0H 64M-bit Serial Flash Memory Array 16,384 Sectors of 528-Bytes , the SRAM from the SPI bus. When the command sequence has been completed, the entire 528-bytes is , Thus, the entire 528-bytes, a single byte, or a sequence of bytes can be read from, or written to the ... Original
datasheet

23 pages,
367.51 Kb

NXSF032A-0502 32-PIN 001H NX25F641C 64M-BIT NX25F641C abstract
datasheet frame
Abstract: sectors of 528-bytes (4,224 bits) each, as shown in Figure 3. The block size of the device is 64 sectors , to the Flash memory array one sector (528-bytes) at a time through the Serial SRAM using a Write to , 528-Bytes each. Organized in 32, 64 and 128 blocks of 32 sectors per block. Block 0 Sector 63 003FH 003FH , command sequence has been completed, the entire 528-bytes is written to the selected sector. See Erase/Write cycle timing (tWP). The SRAM is fully byte-addressable. Thus, the entire 528-bytes, a single ... Original
datasheet

26 pages,
410.25 Kb

25f16 25f0* spi 25F320 0000007F 32M Nonvolatile SRAM Nexflash NexFlash Technologies NX25F160C NXSF029A-1201 transistor ba15 0000-037F 32 megabit serial flash 25F160 25f080 NX25F080C NX25F160C NX25F080C abstract
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Abstract: market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can , Pages = (16K + 512) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes , 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodating data transfer , 31 Page 30 Page 31 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register K9T1G08U0M-YCB0 K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 ... Original
datasheet

38 pages,
653.31 Kb

K9T1G08U0M-YCB0 K9T1G08U0M-Y K9T1G08U0M-VCB0 K9T1G08U0M-V K9T1G08U0M-YCB0 abstract
datasheet frame
Abstract: the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the , ) Bytes 1 Device = 528Bytes x 32Pages x 8,192 Blocks = 1,056 Mbits (=256 Bytes) 8 bits 512Bytes , (pages) by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-bytes , 528bytes Page Register 528bytes Page Register 528bytes Page Register 8 528bytes Page Register , internal 528bytes page registers are utilized as separate buffers for this operation and the system design ... Original
datasheet

38 pages,
657.83 Kb

K9T1G08U0M-Y K9T1G08U0M-VCB0 K9T1G08U0M-V K9T1G08U0M K9T1G08U0M-YCB0 K9T1G08U0M-YCB0 abstract
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Abstract: Serial DataFlash Density (Mbits) Part Number Page-Erase, Byte-Alterable Serial Flash Memory VCC Min (V) Interface Architecture Speed (MHz) SRAM Buffers OTP Sec. S/N Packages (Note 1) (Note 2) Availability Battery Voltage (2.7 to 3.6V) - Commercial/Industrial Temperature Grades AT45DB011B AT45DB011B 1 2.7 Serial (SPI Bus) 20 1 (264 Bytes) C(9C1)-S(8S2)-X(14X) Now AT45DB021B AT45DB021B 2 2.7 Serial (SPI Bus) 20 2 (264 Bytes Each) C(9C1)-S(8 ... Original
datasheet

1 pages,
24.3 Kb

AT45DB321D AT45DB642D footprint soic AT45DB041D-2 TSOP 28 SPI memory Package AT45DB161D transistor q406 AT45DB1282D q406 transistor data q206 AT45DB 8cn3 q206 transistor datasheet abstract
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Abstract: Features · Single 2.7V - 3.6V Supply · RapidSTM Serial Interface: 66 MHz Maximum Clock Frequency ­ SPI Compatible Modes 0 and 3 · User Configurable Page Size · · · · · · · · · · · · · ­ 512 Bytes per Page ­ 528 Bytes per Page ­ Page Size Can Be Factory Pre-configured for 512 Bytes Page Program Operation ­ Intelligent Programming Operation ­ 8,192 Pages (512/528 Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512 Bytes) ­ Block Erase (4 Kbytes) ... Original
datasheet

6 pages,
215.54 Kb

TSOP 28 SPI memory Package EDR-7320 AT45DCB004D AT45DB321D-MU AT45DB321D AT45DB321D-MWU VDFN AT45DB321D-SU datasheet abstract
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Abstract: Features · Single 2.5V - 3.6V or 2.7V - 3.6V Supply · RapidSTM Serial Interface: 66 MHz Maximum Clock Frequency ­ SPI Compatible Modes 0 and 3 · User Configurable Page Size · · · · · · · · · · · · · ­ 512 Bytes per Page ­ 528 Bytes per Page ­ Page Size Can Be Factory Pre-configured for 512 Bytes Page Program Operation ­ Intelligent Programming Operation ­ 4,096 Pages (512/528 Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512 Bytes) ­ Block E ... Original
datasheet

6 pages,
199.3 Kb

TSOP 28 SPI memory Package MO-183 AT45DCB002D AT45DB161D-TU AT45DB161D-MU AT45DB161D AT45DB161D-SU datasheet abstract
datasheet frame
Abstract: Features · Single 2.5V - 3.6V or 2.7V - 3.6V Supply · RapidSTM Serial Interface: 66 MHz Maximum Clock Frequency ­ SPI Compatible Modes 0 and 3 · User Configurable Page Size · · · · · · · · · · · · · ­ 512 Bytes per Page ­ 528 Bytes per Page ­ Page Size Can Be Factory Pre-configured for 512 Bytes Page Program Operation ­ Intelligent Programming Operation ­ 4,096 Pages (512/528 Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512 Bytes) ­ Block E ... Original
datasheet

6 pages,
221.18 Kb

AT45DCB002D AT45DB161D-TU AT45DB161D-SU-SL954 AT45DB161D-MU AT45DB161D-SU AT45DB161D datasheet abstract
datasheet frame
Abstract: Features · Single 2.5V - 3.6V or 2.7V - 3.6V Supply · RapidSTM Serial Interface: 66 MHz Maximum Clock Frequency ­ SPI Compatible Modes 0 and 3 · User Configurable Page Size · · · · · · · · · · · · · ­ 512 Bytes per Page ­ 528 Bytes per Page ­ Page Size Can Be Factory Pre-configured for 512 Bytes Page Program Operation ­ Intelligent Programming Operation ­ 4,096 Pages (512/528 Bytes/Page) Main Memory Flexible Erase Options ­ Page Erase (512 Bytes) ­ Block E ... Original
datasheet

6 pages,
217 Kb

VDFN AT45DCB002D AT45DB161D-TU AT45DB161D-MU AT45DB161D AT45DB161D-SU datasheet abstract
datasheet frame
Abstract: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system applications which demand higher data storage. NAND Flash is used in applications such as 3G mobile phones, digital cameras and camcorders, PDAs, MP3 players, digital consumer equipment and removable storage media such as USB di ... Original
datasheet

4 pages,
148.33 Kb

F70 Package NAND256R3A NAND01GW3B NAND512R3A NAND512W3A NAND01GR3B NAND flash tfbga USOP48 NAND128W3A NAND08GW3B NAND256W3A VFBGA63 STMicroelectronics NAND256W3A datasheet abstract
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Abstract: S ERIAL D ATA F LASH DATAFLASH. LEADING THE SERIAL FLASH REVOLUTION! M EMORY SIMPLIFY YOUR DESIGN, REDUCE COSTS AND SYSTEM FEATURES AND PERFORMANCE REQUIREMENTS ARE CONTINUALLY INCREASING WHEREAS TIME TO MARKET AND PRICE POINTS CONTINUE TO DROP. FOR THE DESIGNER, REDUCING FUNCTIONALITY IS NOT AN OPTION. SOLUTION: LOSE PINS NOT FEATURES. SPEED YOUR TIME TO MARKET! Serial Flash is Revolutionizing the NOR Flash Market. Atmel pioneered the SPI serial Flash market when it ... Original
datasheet

2 pages,
115.53 Kb

AT45DB011B AT45DB021B AT45DB041B AT45DB041D AT45DB1282D AT45DB161D AT45DBxxx AT45DBxxxx 3386C Atmel Jedec 8S1 ATMEL Package type 8S1 ATMEL SOIC 8S1 Pad layout ATMEL Packaging information JEDEC SOIC DataFlash datasheet abstract
datasheet frame
Abstract: buffer size is 528bytes, 10 address bits (BFA9-BFA0) are required to specify the first byte of data to ... Original
datasheet

19 pages,
211.52 Kb

PA11 PA10 AT45DB161-RC AT45DB161-JC AT45DB161 AT45DB161 abstract
datasheet frame
Abstract: bits. Since the buffer size is 528bytes, 10 address bits (BFA9-BFA0) are required to specify the first ... Original
datasheet

20 pages,
214.56 Kb

PA11-PA0 PA11 PA10 AT45DB161 AT45D161-RC AT45D161-JC AT45D161 AT45D161 abstract
datasheet frame