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512MB

Catalog Datasheet MFG & Type PDF Document Tags

MT48LC32M16A2

Abstract: PC133 registered reference design 0.8ns 0.8ns PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. P 10/12 EN 1 Products and specifications , -pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II PDF: 09005aef809bf8f3 512Mb_sdr.pdf , . 75 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. P 10/12 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. P 10/12 EN 4 Micron Technology, Inc , . 38 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. P 10/12 EN 5 Micron Technology, Inc
Micron Technology
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MT48LC32M16A2 PC133 registered reference design 512MB MT48LC128M4A2 MT48LC64M8A2 PC100- PC133- PC133

MT46H16M32lf

Abstract: : 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 1 Products and specifications discussed , . Micron's FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf , . 97 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 3 Micron , . 97 97 98 98 98 98 98 98 99 99 99 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I , . 53 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 5 Micron
Micron Technology
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MT46H16M32lf MT46H32M16LF MT46H16M32LF IDD2/IDD61

elpida lpddr2

Abstract: Elpida LPDDR2 Memory 6.0ns PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 1 Micron , 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 2 Micron Technology, Inc. reserves the right to , . 96 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 3 Micron , . PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 4 96 96 97 97 , . 52 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 5 Micron
Micron Technology
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elpida lpddr2 Elpida LPDDR2 Memory micron lpddr2 lpddr2 MT46H16M32 ELPIDA mobile dram LPDDR2
Abstract: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF â'" 8 Meg , MHz 6.0ns PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Rev. I 01/14 EN 1 Micron , by Micron without notice. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Table 2: Configuration , ] 512 A[8:0] 256 A[7:0] Figure 1: 512Mb Mobile LPDDR Part Numbering MT 46 H 32M16 LF BF , decoder is available at www.micron.com/decoder. PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Micron Technology
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MT46H16M32LG

kingston kth-x3b 4g

Abstract: kingston sd 2GB KE-U104G-3AJ 4GB DTVP Custom for LIDL Project 065-4713 KTA-IMAC400/512 512MB PC3200 Module 065-4976 , Module 06P4050 KTM4049/512 512MB Module 06P4051 KTM4049/1G 1GB Module 06P4054 KTM4053/512 512MB Module 06P4055 KTM4053/1G 1GB Module 06P4057 KTM4049/512 512MB Module 06P4061 KTM4053/512 512MB Module 06P4062 KTM4053/1G 1GB Module 097S03382 KTK6360/512 512MB Module 097S03382 M6464C250 512MB DDR-333 Module 09N4308 KTM-X305/1G 1GB Module 1/2 of 30R5147 KTM2865/8G 8GB 400MHz Dual Rank
Kingston Technology
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kingston kth-x3b 4g kingston sd 2GB 500662-B21 M12864 KTH-PL313E DT101G2 KW-B194G-3FQ KW-B198G-3FQ DTVP/16GB KE-U1016-3AJ KTA-G5400/1G KTA-G5400/2G

PF38F4060M0Y3DF

Abstract: PF38F3040 1Gb + 2x128P VA enabled JZ58F0112M0Q0GE 1Gb 512Mb M PSRAM Uniform 1.8 1.8 , 1Gb + 2x128P VA enabled JZ58F0112M0Q0GE 1Gb 512Mb M PSRAM Uniform 1.8 1.8 , x32 X48D1 - 165ball 11x13 mm 512Mb + 512DDR MUX PF58F0075M0Y1WE 512Mb 512Mb M DDR Uniform 1.8 1.8 Muxed x16 x16 X48D5 - 165ball 9x11 mm 512Mb + 256SD PF38F5070M0Y0BE 512Mb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D- 105ball
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PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 1024M PF58F0062M0Y1BF PF58F0033M0Y0BF PF58F0033M0Y1BF PF38F6066M0Y3DF 256SDR

MT48LC32M16A2 REFLOW

Abstract: PC133 registered reference design : 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN Setup Time Hold Time 5.4ns 1.5ns 0.8ns 5.4ns , MT48LC32M16A2TG 32 Meg x 16 54-pin TSOP II PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN 2 , . 76 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN 3 Micron Technology, Inc , . 39 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN 4 Micron Technology, Inc , . 78 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN 5 Micron Technology, Inc
Micron Technology
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MT48LC32M16A2 REFLOW MT48LC128M4A2TG TN-48-05

512MB ddp

Abstract: 64MX8 Technology 256MB(128Mb sTSOP) vs 512MB(DDP 512Mb) Totally compatible with 256MB SODIMM based on 128Mb sTSOP!! 256Mbyte(133MHz) 512Mbyte(133MHz) Based component 128Mb(16Mx8) sTSOP DDP 512Mb , 512MB(64Mx64) SODIMM Solution Samsung's proposal is DDP 512Mb based 512MB SODIMM!! Solution I Solution II Based Component Mono 512Mb DDP 512Mb Stacked 512Mb Package Type TSOP2 , Memory Technology Pin Configuration of DDP 512Mb VD D DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ
Samsung Electronics
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512MB ddp 64MX8 SO-DIMM 133MH

DDR2-533

Abstract: elpida (1Gb DDR2 SDRAM based) DDR2 SDRAM DIMM Family Type 512MB 1GB Fully Buffered DIMM 512Mb-based 1 rank FBGA (x8) DDR2-533/667 512Mb-based 2 ranks FBGA (x8) DDR2-533/667 512Mb-based 2 , stacked FBGA (x4) DDR2-533/667 Registered DIMM 512Mb-based 1 rank FBGA (x8) DDR2-400/533/667 512Mb-based 1 rank FBGA (x4) DDR2-400/533/667 512Mb-based 2 ranks FBGA (x4) DDR2-400/533/667 , /667 Unbuffered DIMM 2GB 512Mb-based 512Mb-based 1 rank 2 ranks FBGA (x8) FBGA (x8
Elpida Memory
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DDR2-533 elpida DDR2533 Elpida Memory ELPIDA DDR2 elpida memory ddr2 DDR2-533/667/ DDR2-533/667/800 E0879E20
Abstract: ADVANCE 512Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100- and PC133-compliant · , MT48LC32M16A2TG-7E 512Mb SDRAM PART NUMBERS PART NUMBER MT48LC128M4A2TG MT48LC64M8A2TG MT48LC32M16A2TG 512Mb , . ADVANCE 512Mb: x4, x8, x16 SDRAM GENERAL DESCRIPTION The 512Mb SDRAM is a high-speed CMOS, dynamic , 512Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture , , random-access operation. The 512Mb SDRAM is designed to operate at 3.3V. An auto refresh mode is provided, along Micron Technology
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128M4 512MSDRAM 54-PIN
Abstract: PC2700 Utilizes DDR266 and DDR333 SDRAM 66p TSOP components. 512MB (64MX64) built w/64MX4 components , performance dynamic random-access 512MB modules respectively. These modules are organized in a x64 , : A0-A12, BA0, BA1, RAS#, CAS#, WE# (512MB) Input Capacitance: S0#, S1# (512MB) Input Capacitance: CK0, CK0# Input Capacitance: CK1, CK1#, CK2, CK2# Input Capacitance: CKE0 , (CKE1: 512MB only) Max 512MB 10.0 N/A 48.0 24.0 12.0 18.0 24.0 pF pF pF pF pF DC ELECTRICAL CHARACTERISTICS SpecTek
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P64M6416HHB PC2100 P64M6416HHB-XX 166MH

MT46H32M16

Abstract: for x16 configuration. 3. Only available for x32 configuration. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf , : 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 2 Micron Technology, Inc. reserves the , . 97 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 3 Micron , . 97 97 98 98 98 98 98 98 99 99 99 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I , . 53 PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf ­ Rev. I 12/09 EN 5 Micron
Micron Technology
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MT46H32M16

Micron 512MB NOR FLASH

Abstract: calypso freescale DiskOnChip G3 Low Power (LP) 64MB (512Mb) Flash Disk with 1.8V Core and I/O Preliminary Data , security-enabling features High capacity single die 64MB (512Mb) Device cascade capacity: up to 256MB (2Gb , Data Sheet, Rev. 0.1 91-DT-0904-20 DiskOnChip G3 Low Power (LP) 64MB (512Mb) Performance , wear-leveling Programmable Boot Block with XIP capability to replace boot NOR 2KB for 512Mb (64MB) devices , parameters. 2 Data Sheet, Rev. 0.1 91-DT-0904-20 DiskOnChip G3 Low Power (LP) 64MB (512Mb
M-Systems
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Micron 512MB NOR FLASH calypso freescale M-Systems diskonchip Micron MLC ER4525 MICRON NAND MLC

MT48LC32M16A2P

Abstract: MT48LC64M8A2P 0.8ns 0.8ns PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. Q 12/12 EN 1 Products and specifications , -pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II PDF: 09005aef809bf8f3 512Mb_sdr.pdf , . 75 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. Q 12/12 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. Q 12/12 EN 4 Micron Technology, Inc , . 38 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. Q 12/12 EN 5 Micron Technology, Inc
Micron Technology
Original
MT48LC32M16A2P MT48LC64M8A2P

MT18LSDT3272DG-13E

Abstract: MT48LC32M 256MB, 512MB, 1GB (x72, ECC, DR) 168-Pin SDRAM RDIMM Features SDRAM RDIMM MT18LSDT3272D ­ 256MB MT18LSDT6472D ­ 512MB MT18LSDT12872D ­ 1GB For component data sheets, refer to Micron's Web , components · Supports ECC error detection and correction · 256MB (32 Meg x 72), 512MB (64 Meg x 72), and , : 15.625µs (256MB) or 7.81µs (512MB, 1GB) maximum periodic refresh interval · LVTTL-compatible inputs and , . 256MB, 512MB, 1GB (x72, ECC, DR) 168-Pin SDRAM RDIMM Features Table 2: Addressing Parameter
Micron Technology
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MO-161 MT18LSDT3272DG-13E MT48LC32M MT48LC16M8A2 mt48lc MT48LC32M8A2 168-P 1694/S SD18C32

MT18VDDT12872AG-265

Abstract: MT18VDDT 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT18VDDT6472A ­ 512MB1 MT18VDDT12872A ­ 1GB For component data sheets, refer to Micron's Web site: www.micron.com , rates: PC2100, PC2700, or PC3200 · 512MB (64 Meg x 72) and 1GB (128 Meg x 72) · Supports ECC error , . Draft 9/ 9/ 2008 PCB height: 31.75mm (1.25in) 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features Table 2: Addressing Parameter 512MB 8K Refresh count 1GB 8K Row address 8K
Micron Technology
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MT18VDDT12872AG-265 MT18VDDT mt18vddt6472ag-26a DM 321 MT18VDDT12872AG-262 mt18vddt6472ag 184-P MO-206 DD18C64

PC133 registered reference design

Abstract: 0.8ns 0.8ns PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. O 2/12 EN 1 Products and specifications , -pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II 54-pin TSOP II PDF: 09005aef809bf8f3 512Mb_sdr.pdf , . 75 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. O 2/12 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. O 2/12 EN 4 Micron Technology, Inc , . 38 PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. O 2/12 EN 5 Micron Technology, Inc
Micron Technology
Original
Abstract: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF â'" 8 Meg , PDF: 09005aef846e285e t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN 1 Micron Technology, Inc , without notice. 512Mb: x16, x32 Automotive LPDDR SDRAM Features Table 2: Configuration Addressing , ] 512 A[8:0] Figure 1: 512Mb Mobile LPDDR Part Numbering MT 46 H 32M16 LF BF -6 Micron , . PDF: 09005aef846e285e t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN 2 Micron Technology, Inc Micron Technology
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ddr2 ram pin

Abstract: 512MB SOD-DDR-512-333 512MB PC 2700 333MHz SODIMM SOD -DDR-1GB-333 1GB PC 2700 333MHz SODIMM 200 Pin DDR2 SODIMM Notebook Memory RS Part No. M2m Part no Description 388717 SOD-DDR-512-667 512Mb PC5300 , SODIMM Memory Type DDR SODIMM DDR SODIMM Density 512MB 1GB Speed 333MHz 333MHz DDR2 SODIMM DDR2 SODIMM DDR2 SODIMM DDR2 SODIMM DDR2 SODIMM Density 512MB 1GB 2GB 1GB 2Gb Speed , DDR64X64-PC400 6195564 DDR128X64-PC400 Description DDR 512MB PC3200 400 MHz DDR 1GB PC3200 400MHz DDR
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1GB-PC5300 2GB-PC5300 ddr2 ram pin ddr2 ddr2 ram ddr 240 pin DDR2 SODIMM 333MH 667MH PC6400

Micron LPDDR2

Abstract: Micron Confidential and Proprietary Advance 512Mb: x16, x32 Mobile LPDDR SDRAM Features , for x32 configuration. PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN 1 , Proprietary Advance 512Mb: x16, x32 Mobile LPDDR SDRAM Features Table 2: Configuration Addressing , Meg x 32 4 Meg x 32 x 4 banks 8K 16K A[13:0] 256 A[7:0] Figure 1: 512Mb Mobile LPDDR Part Numbering , www.micron.com/decoder. PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN 2 Micron
Micron Technology
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Abstract: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF â'" 8 Meg , MHz 6.0ns PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Rev. I 01/14 EN 1 Micron , by Micron without notice. 512Mb: x16, x32 Mobile LPDDR SDRAM Features Table 2: Configuration , ] 512 A[8:0] 256 A[7:0] Figure 1: 512Mb Mobile LPDDR Part Numbering MT 46 H 32M16 LF BF , decoder is available at www.micron.com/decoder. PDF: 09005aef83dd2b3e t67m_512mb_mobile_lpddr.pdf - Kingston Technology
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PC4300 KHX4300/256 KHX4300/512 KHX4300K2/512 KHX4300K2/1G PC4000
Abstract: . · 1GB, 512MB modules built with 512Mb DDR3 SDRAMs in packages PG-TFBGA-78 · DDR3 SDRAMs with a , designed with 512Mb Double Data Rate (DDR3) Synchronous DRAMs. De-coupling capacitors, stub resistors , modules in128M × 64 (1GB), 64M × 64 (512MB) and as ECC modules in 128M × 72 (1GB), 64M × 72 (512MB , ­16J Compliance Code 512MB 1R×8 PC3­6400U­5-XX­A0 512MB 1R×8 PC3­6400U­6-XX­A0 512MB 1R×8 PC3­8500U­6-XX­A0 512MB 1R×8 PC3­8500U­7-XX­A0 512MB 1R×8 PC3­8500U­8-XX­A0 512MB 1R×8 PC3­10600U­8-XX­A0 512MB 1R×8 PC3 Micron Technology
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MT42L32M16D1 MT42L32M32D2 MT42L16M32D1
Abstract: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 ­ 32 Meg x 4 x 4 banks MT48LC64M8A2 , : 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN Setup Time Hold Time 5.4ns 1.5ns 0.8ns 5.4ns , to change by Micron without notice. 512Mb: x4, x8, x16 SDRAM Features Table 3: 512Mb SDR Part , MT48LC32M16A2TG 32 Meg x 16 54-pin TSOP II PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. N 7/11 EN 2 , Micron Technology, Inc. All rights reserved. 512Mb: x4, x8, x16 SDRAM Features Contents General Qimonda
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IMSH51U03A1F1C IMSH51E03A1F1C IMSH1GU13A1F1C IMSH1GE13A1F1C 240-P 51/1G

mt18vddt6472ag-265b1

Abstract: 1Gb + 2x128P VA enabled JZ58F0112M0Q0GE 1Gb 512Mb M PSRAM Uniform 1.8 1.8 , 1Gb + 2x128P VA enabled JZ58F0112M0Q0GE 1Gb 512Mb M PSRAM Uniform 1.8 1.8 , x32 X48D1 - 165ball 11x13 mm 512Mb + 512DDR MUX PF58F0075M0Y1WE 512Mb 512Mb M DDR Uniform 1.8 1.8 Muxed x16 x16 X48D5 - 165ball 9x11 mm 512Mb + 256SD PF38F5070M0Y0BE 512Mb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D- 105ball
Micron Technology
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mt18vddt6472ag-265b1 184-PIN PC1600 MT18VDDT3272A 333MT/ DD18C32

512MB SDR SDRAM CHIP

Abstract: MT48H32M16LF 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF , 133 8ns 5.4ns Note: PDF: 09005aef82ea3742 512mb_mobile_sdram_y47m.pdf - Rev. G 08/09 EN , subject to change by Micron without notice. 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Figure 1: 512Mb Mobile LPSDR Part Numbering MT 48 H 32M16 LF BF -75 IT :B Design , part marking decoder is available at www.micron.com/decoder. PDF: 09005aef82ea3742 512mb
Micron Technology
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512MB SDR SDRAM CHIP MT48H16M32LF/LG IDD2/IDD71 16M32

MT48H32M16LF

Abstract: MT48H16M32 ADVANCE 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM MT46V128M4 ­ 32 Meg x , clock rate @ CL = 2 (-8) and CL = 2.5 (-75) *CL = CAS (Read) Latency 512Mb: x4, x8, x16 DDR SDRAM , 512Mb: x4, x8, x16 DDR SDRAM 512Mb DDR SDRAM PART NUMBERS (Note: xx= -75, -75Z, or -8) PART NUMBER , full drive strength outputs are SSTL_2, Class II compatible. The 512Mb DDR SDRAM is a high-speed , quadbank DRAM. The 512Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation
Micron Technology
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MT48H16M32

T6N 700

Abstract: MT46V32M16TG-xx 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM , ] A[7:0] Architecture PDF: 09005aef8511d87c 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM , 5.4ns Note: CL = 3 Figure 1: 512Mb LPSDR Part Numbering MT 48 H 16M32 LF B5 -6 , FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef8511d87c 512mb
Micron Technology
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MT46V64M8 MT46V32M16 T6N 700 MT46V32M16TG-xx BA 5053 DDR200 DDR266B 66-PIN 16DDR
Abstract: Advance 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM , : 09005aef83ea581f 512mb_mobile_sdram_y67m.pdf ­ Rev. A 2/10 EN 1 Products and specifications discussed herein , Technology, Inc. All rights reserved. Advance 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Figure 1: 512Mb Mobile LPSDR Part Numbering MT Micron Technology Product Family 48 = Mobile LPSDR , available at www.micron.com/decoder. PDF: 09005aef83ea581f 512mb_mobile_sdram_y67m.pdf ­ Rev. A 2/10 EN Micron Technology
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3120 32M16

Abstract: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile LPSDR SDRAM MT48H32M16LF ­ 8 Meg x , :0] 16 Meg x 32 Reduced Page Size Option1 4 BA0, BA1 A[13:0] A[7:0] PDF: 09005aef83ea581f 512mb , without notice. © 2011 Micron Technology, Inc. All rights reserved. 512Mb: 32 Meg x 16, 16 Meg x 32 , . Figure 1: 512Mb Mobile LPSDR Part Numbering MT Micron Technology Product Family 48 = Mobile LPSDR , : 09005aef83ea581f 512mb_mobile_sdram_y67m_at.pdf ­ Rev. B 3/11 EN 2 Micron Technology, Inc. reserves the right
Micron Technology
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3120 32M16
Abstract: ADVANCE 512Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100- and PC133-compliant · , MT48LC32M16A2TG-7E 512Mb SDRAM PART NUMBERS PART NUMBER MT48LC128M4A2TG MT48LC64M8A2TG MT48LC32M16A2TG 512Mb , . ADVANCE 512Mb: x4, x8, x16 SDRAM GENERAL DESCRIPTION The 512Mb SDRAM is a high-speed CMOS, dynamic , 512Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture , , random-access operation. The 512Mb SDRAM is designed to operate at 3.3V. An auto refresh mode is provided, along Micron Technology
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PC2100

Abstract: PC2700 NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency , NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Description Nanya 512Mb SDRAMs is a high-speed CMOS , 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device. These synchronous , applications. The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve high speed operation. The , transfer two data words per clock cycle at the I/O pins. A single read or write access for the 512Mb DDR
Micron Technology
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128MB 200-PIN MT8VDDT1664HD MT8VDDT3264HD MT8VDDT6464HD 200-P
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