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TLC1550MJB Texas Instruments 10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor 24-CDIP -55 to 125 visit Texas Instruments
TLC1550MJ Texas Instruments 10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor 24-CDIP -55 to 125 visit Texas Instruments

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50mJ

Catalog Datasheet MFG & Type PDF Document Tags

SPF0001

Abstract: MN638S =80mJ VCEO=120V Es/b=45mJ Es/b=45mJ 3W 13.5W 12W 18W 20W Es/b=50mJ Es/b=150mJ Es/b=50mJ Es/b=40mJ Es/b
Sanken Electric
Original
SPF0001 MN638S SLA5027 sta464c sta509a sanken S-60W STA464 2SA1488A 2SC3851 2SC3852 STA315A STA335A STA415A
Abstract: 50mj -65°C to +175°C RHRU15060 600V 600V 600V 150A 300A 1500A 375W 50mj -65°C to +175°C 400V 400V 400V 150A 300A 1500A 375W 50mj -65°C to +175°C File Number 7-118 3089.2 Specifications -
OCR Scan
RHRU15040 RHRU15050 TA49071

2SD1218

Abstract: m-^yvT,? 2SD1218 2SD1218 "J =i > NPN yu-tl^-Uvh >/Si NPN Planar Darlington *-i -y-^v^ffl/Medium Speed Power Switching â  ^/Features , Built-in 60 V zener diode between cband B Uniformity in breakdown voltage â'¢ x^/l^'-Itt:^^ : Es/b=50mJ (min)0 Large energy handling capability : Es/b = 50mJ (min) â'¢ xj 7f>/xf- KA{ii
-
OCR Scan
T0-220AB SC-46

STA508A

Abstract: STA509A 12W 18W 20W Es/b = 50mJ Es/b = 150mJ Es/b = 50mJ EAS = 40mJ EAS = 40mJ SMD Multi-chip Package Remarks
Sanken Electric
Original
STA461C STA463C STA508A SDC09 SLA8004 FP812 2sd2141 2sd2382 fn812 2SD2141 2SC4153 2SD2382

RHRU15040

Abstract: RHRU15050 RHRU15060 600V 600V 600V 150A 300A 300A 300A 1500A 1500A 1500A 375W 50mj 375W 50mj 375W 50mj -65oC to +175oC -65oC to +175oC -65oC to +175oC File Number 7-118
Harris Semiconductor
Original

h30r1602

Abstract: H30R160 Series Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 , 3.0mJ 2.5mJ Eoff 7.0mJ 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75
Infineon Technologies
Original
IHW30N160R2 PG-TO-247-3 h30r1602 H30R160 1354 H30R1602

H30R1602

Abstract: igbt 1600V 20A 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A , 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75°C 4.0mJ 600V 100°C 125°C 150°C TJ, JUNCTION
Infineon Technologies
Original
igbt 1600V 20A

h30r1602

Abstract: H30R160 Series Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 , 3.0mJ 2.5mJ Eoff 7.0mJ 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75
Infineon Technologies
Original
h30r h30r1602 by H30R1 igbt 600V 30A

H30R1602

Abstract: ihw30n160r2 LOSSES 6.0mJ 5.0mJ 4.0mJ 3.0mJ 2.0mJ 1.0mJ 0.0mJ 0A 10A 20A 30A 40A 50A Eoff E, SWITCHING ENERGY LOSSES 6.0mJ 5.0mJ 4.0mJ 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT Figure 13. Typical , °C 125°C 150°C 7.0mJ 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 3.5mJ 3.0mJ 2.5mJ 2.0mJ 25°C 4.0mJ
Infineon Technologies
Original
igbt 1000v 10A

MOSFET 300A 400v

Abstract: RHR15060 Dissipation.PD 375W Avalanche Energy.WAVL 50mj (L = 40mH) Operating and , 1500A 375W 50 mj RHRU15060 600V 600V 600V 150A 300A 1500A 375W 50mj -65°C to +175°C -65°C to
-
OCR Scan
RHR15040 RHR15050 RHR15060 MOSFET 300A 400v HA 3089 ru15060 1-800-4-HARRIS

h30r1602

Abstract: H30R160 ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 50A IC, COLLECTOR CURRENT , 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75°C 4.0mJ 600V 100°C 125°C 150
Infineon Technologies
Original

h30r1602

Abstract: PG-TO247HC-3 ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 50A IC, COLLECTOR CURRENT , 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75°C 4.0mJ 600V 100°C 125°C 150
Infineon Technologies
Original
IHY30N160R2 PG-TO247HC-3

H30R1602

Abstract: H30R160 Series Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 , 3.0mJ 2.5mJ Eoff 7.0mJ 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75
Infineon Technologies
Original
PG-TO-247-3-21 pspice high frequency igbt IGBT 600V 40A

h30r1602

Abstract: "h30r1602" ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.0mJ 6.0mJ Eoff 5.0mJ 4.0mJ 3.0mJ 2.0mJ 6.0mJ 5.0mJ 1.0mJ 4.0mJ 0.0mJ 0A 10A 20A 30A 40A 10 50A IC, COLLECTOR CURRENT , 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ 2.0mJ 25°C 50°C 75°C 4.0mJ 600V 100°C 125°C 150
Infineon Technologies
Original
igbt 1000v 30a PG-TO-247HC-3

SML75EUZ14JD

Abstract: 75EUZ14JD 50mJ -55 to +150°C -55 to +150°C Derate Above 25°C WAVL TJ Tstg Avalanche Energy Junction
Semelab
Original
SML75EUZ14JD 75EUZ14JD LE17
Abstract: Temperature 1200V 1200V 75A 175A 750A 230W 50mJ -55 to 150°C Semelab plc. Telephone +44(0)1455 556565 Semelab
Original
SML75EUZ12JD

T1P121

Abstract: TIPI22 '¢ 5A rated collector current â'¢ 50mJ reverse energy ratings . Electrical Characteristics (Ta
-
OCR Scan
T1P121 TIP126 TIP127 TIPI22 TIP125 T1P125 0D10M43

TIPI26

Abstract: TIP127 Features: · 65W at 25°C case temperature · Min. hFE of 1000 at 3V, 3A · 5A rated collector Current · 50mJ
-
OCR Scan
TIP120 TIPI26 001044S TIP12 TIP121 TIP122 TIPI25

H30T60

Abstract: S-108 °C 75°C 1,50mJ Eoff 1,25mJ 1,00mJ 0,75mJ 0,50mJ 0,25mJ 0,00mJ 300V 100°C 125°C 150°C TJ
Infineon Technologies
Original
IHW30N60T H30T60 S-108 marking iss 30NC60

T1P120

Abstract: TIPI22 50mJ reverse energy ratings , Features; Electrical Characteristics (Ta=25°C) ftem
-
OCR Scan
T1P120

0402 0603 0805 1206

Abstract: 01005 50mj -65°C to +175°C RHRU15060 600V 600V 600V 150A 300A 1500A 375W 50mj -65°C to +175°C 400V 400V 400V 150A 300A 1500A 375W 50mj -65°C to +175°C File Number 7-118 3089.2 Specifications
Fenghua Advanced Technology
Original
0402 0603 0805 1206 01005 resistor 0805 0.05 resistor 1206 100m

R 1206 resistor

Abstract: C0603K m-^yvT,? 2SD1218 2SD1218 "J =i > NPN yu-tl^-Uvh >/Si NPN Planar Darlington *-i -y-^v^ffl/Medium Speed Power Switching â  ^/Features , Built-in 60 V zener diode between cband B Uniformity in breakdown voltage â'¢ x^/l^'-Itt:^^ : Es/b=50mJ (min)0 Large energy handling capability : Es/b = 50mJ (min) â'¢ xj 7f>/xf- KA{ii
Fenghua Advanced Technology
Original
R 1206 resistor C0603K
Abstract: RHRU15060 600V 600V 600V 150A 300A 300A 300A 1500A 1500A 1500A 375W 50mj 375W 50mj 375W 50mj -65oC to +175oC -65oC to +175oC -65oC to +175oC File Number 7-118 Fenghua Advanced Technology
Original
Abstract: Dissipation.PD 375W Avalanche Energy.WAVL 50mj (L = 40mH) Operating and , 1500A 375W 50 mj RHRU15060 600V 600V 600V 150A 300A 1500A 375W 50mj -65°C to +175°C -65°C to -
OCR Scan
HRU15060

zener diode 15v 3a

Abstract: 2sc3987 12W 18W 20W Es/b = 50mJ Es/b = 150mJ Es/b = 50mJ EAS = 40mJ EAS = 40mJ SMD Multi-chip Package Remarks
-
OCR Scan
zener diode 15v 3a 2sc3987 2SD1395 2SC4547 2SD1838 T0-220 T0-220ML T0-126LP

1W 10V ZENER DIODE

Abstract: C4169 *) Eon and Etsinclude losses due to diode recovery Ets* 15.0mJ 10.0mJ Eon* 5.0mJ Eoff , ENERGY LOSSES E off E on* 2.5mJ 0.0mJ 100°C Eon* 7.5mJ Ets* 5.0mJ Eoff 2.5mJ , circuit in Figure E) IFAG IPC TD VLS ï'³ï'µï— 10.0mJ 5.0mJ 50°C ï'²ï'µï— *) Eon
-
OCR Scan
1W 10V ZENER DIODE C4169 T0-220MI 2SD2176 2SC4671 2SC4737 2SC3705

k40T1202

Abstract: IGBT K40T1202 recovery Ets* 15.0mJ 10.0mJ Eon* 5.0mJ Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING , due to diode recovery E on* 2.5mJ 0.0mJ 50°C 100°C Eon* 7.5mJ Ets* 5.0mJ Eoff , Ets include losses due to diode recovery Ets* 5.0mJ 15 RG, GATE RESISTOR Figure 14
Infineon Technologies
Original
k40T1202 IGBT K40T1202 IKW40N120T2 K40T1202
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