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500-H Datasheet

Part Manufacturer Description PDF Type
500HXD25 N/A The Diode Data Book with Package Outlines 1993 Scan
500HXD25 Toshiba Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs Scan
500HXD25 Toshiba 500A Iout, 5.0kV Vrrm General Purpose Silicon Rectifier Scan
500HXD28 Toshiba ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) Scan

500-H

Catalog Datasheet MFG & Type PDF Document Tags

4263B

Abstract: capacitor 1000 35v 500h 1000h ini Measurement (a) 500h 1000h ini 500h 1000h ini , Symposium, October-November 2007, Barcelona, Spain Page 2 of 6 500h 1000h 6.3V chip B: Endurance , 1200 1000 800 1,0 600 0,5 400 200 0,0 ini 500h 1000h ini 500h 1000h ini 500h 1000h Measurement ini 500h 1000h Measurement (a) (b) Fig. 2 ­ , ,5 400 200 0,0 ini 500h 1000h ini 500h 1000h ini 500h 1000h
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Original
4263B capacitor 1000 35v

100BA

Abstract: 2 max. 40%2: for 20%2: for 96h 500h 85%2: for 85%2: for 96h 500h 60%2:, 90 to 40%2:, 90 to 95%RH for 96h 95%RH for 500h 6.3 3.4 5 W 3 D (mm) 4 4.9 2.3 H , ,000cycles 5 max. 1mA 5V DC 0.1A 12V DC 100,000cycles 1 max. 10,000cycles 100m max. 40%2: for 500h 40%2: for 96h 40%2: for 500h 85%2: for 500h 85%2: for 96h 85%2: for 500h 60%2:, 90 to 95%RH for 500h 2.8 3.6 40%2:, 90 to 95%RH for 96h 9 60%2:, 90 to 95%RH for 500h 11
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Original
100BA

100BA

Abstract: ,000cycles 1 max. 0.1A 12V DC 10,000cycles 100m max. 40±2 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 , ,000cycles 10 max. 10mA 16V DC 25,000cycles 2 max. 1mA 5V DC 50,000cycles 5 max. 40±2 for 500h
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Original
Abstract: status Product data sheet Change notice Supersedes BLF6G15L-500H_6G 15LS-500H v.1 Document ID BLF6G15L-500H_6G15LS-500H , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 - 16 September 2011 Product data , Industrial applications at 1.5 GHz NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS , source [1] Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1 2 5 3 3 4 4 5 1 2 sym117 BLF6G15LS-500H (SOT539B) 1 2 3 4 5 drain1 drain2 gate1 gate2 source [1] 1 2 5 1 3 NXP Semiconductors
Original
BLF6G15L-500H BLF6G15LS-500H 2002/95/EC

100BA

Abstract: SPVM110100 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 5.8 mm W D H 100BA 3V DC
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SPVM110100 SPVM210100 SPVM110200 DC/50BA SPVM210200

spvf230200

Abstract: 2N57 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 5.8 mm W D H 100BA 3V DC
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SPVF130100 SPVF140100 spvf230200 2N57 SPVF120100 SPVF210200 SPVF220200 SPVF230200

SPVM210200

Abstract: SPVM110200 50,000cycles 2 max. 50,000cycles 1 max. 100,000cycles 2 max. 40%2: for 20%2: for 96h 500h 85%2: for 85%2: for 96h 500h 60%2:, 90 to 40%2:, 90 to 95%RH for 96h 95%RH for 500h , ,000cycles 1 max. 10,000cycles 100m max. 40%2: for 500h 40%2: for 96h 40%2: for 500h 85%2: for 500h 85%2: for 96h 85%2: for 500h 60%2:, 90 to 95%RH for 500h 2.8 3.6 40%2:, 90 to 95%RH for 96h 9 60%2:, 90 to 95%RH for 500h 11 5.8 3.5 4.2 3.5 1.5 1.2 4.5 7
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417G409G

100BA

Abstract: 5N50 ,000cycles 10 max. 10mA 16V DC 25,000cycles 2 max. 1mA 5V DC 50,000cycles 5 max. 40±2 for 500h 40±2 for 500h 20±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 12.5 60±2, 90 95%RH for 96h 11 40±2, 90 95 , %RH for 500h 1 0.7±0.3N 0.7N max. 0.35N max. 0.55N max. 61 62 64 65
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5N50 SPVC110100 SPVC110300

J2735

Abstract: DVB-t2 200 °C Fig 8. BLF6G15L-500H_6G15LS-500H Objective data sheet BLF6G15LS-500H , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 - 11 May 2011 Objective data , 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2 , BLF6G15L-500H (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLF6G15LS-500H (SOT539B) 1 drain1 2 drain2
NXP Semiconductors
Original
J2735 DVB-t2 GP414 transistor smd 723 ATC800B JESD625-A

SSCM110100

Abstract: 100BA . 1mA 5V DC 50,000cycles 5 max. 40±2 for 500h 40±2 for 500h 20±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 12.5 , max. 350±5, 3s max. 260±5, 5±1s 60±2, 90 95%RH for 500h 1 0.7±0.3N
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SSCM110100 SSCM120100

100BA

Abstract: ,000cycles 5 max. 1mA 5V DC 100,000cycles 1 max. 0.1A 12V DC 10,000cycles 100m max. 40±2 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h Dry heat Damp heat W , 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 to 95%RH for 500h 6.3 40±2, 90 to 95%RH for 96h 5 3.4 60±2, 90 to 95%RH for 500h 2.8 3.6 40±2, 90 to 95%RH for 96h 9 60±2, 90 to 95%RH for 500h 11 5.8 Operation force 0.35N max
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2N60

Abstract: 5N50 ,000cycles 1 max. 0.1A 12V DC 10,000cycles 100m max. 40±2 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11
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2N60 SSCUL10200 SSCUA10200

F0887

Abstract: f0889 0,4000H 0,6000H 0,8000H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FC00H,400H 0FB00H,500H 0FB00H,500H 78K0 78K0/LE3 µPD78F0444 , × × F0445 0,0F000H 0FB00H,500H 78K0 78K0 78K0 78K0/LE3 , × × × F0451 F0452 F0453 0,4000H 0,6000H 0,8000H 0FC00H,400H 0FB00H,500H
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F0887 f0889 78f0513 78F0511 78F0881 70f3378 CA850 CA78K0 CA78K0R 78K0R V850E2M 78K0/K

100BA

Abstract: 500h 85%2: for 85%2: for 96h 500h 60%2:, 90 to 40%2:, 90 to 95%RH for 96h 95%RH for 500h 6.3 3.4 5 W 3 D (mm) 4 4.9 2.3 H 40: to 185: ¡ 100BA 3V DC 500m , ,000cycles 1 max. 10,000cycles 100m max. 40%2: for 500h 40%2: for 96h 40%2: for 500h 85%2: for 500h 85%2: for 96h 85%2: for 500h 60%2:, 90 to 95%RH for 500h 2.8 3.6 40%2:, 90 to 95%RH for 96h 9 60%2:, 90 to 95%RH for 500h 11 5.8 3.5 4.2 3.5 1.5 1.2 4.5 7
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Original
400G270G290

SPPW811203

Abstract: 100BA ,000cycles 1 max. 0.1A 12V DC 10,000cycles 100m max. 40±2 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11
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SPPW811203 2 pc 506 DC/100BA SPPW812302 SPPW812300 SPPW810201 SPPW810203

100BA

Abstract: micro tact switch ,000cycles 5 max. 1mA 5V DC 100,000cycles 1 max. 0.1A 12V DC 10,000cycles 100m max. 40±2 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h Dry heat Damp heat W , 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 to 95%RH for 500h 6.3 40±2, 90 to 95%RH for 96h 5 3.4 60±2, 90 to 95%RH for 500h 2.8 3.6 40±2, 90 to 95%RH for 96h 9 60±2, 90 to 95%RH for 500h 11 5.8 Operation force 0.35N max
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micro tact switch DC 5V to DC 100V CIRCUIT DIAGRAM

417-99

Abstract: SPVR110100 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 5.8 mm W D H 100BA 3V DC
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Original
SPVR110100 417-99 SPVR120100
Abstract: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 - 12 July 2013 Product data sheet , Industrial applications at 1.5 GHz NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS , source [1] Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1 2 5 3 3 4 4 5 1 2 sym117 BLF6G15LS-500H (SOT539B) 1 2 3 4 5 drain1 drain2 gate1 gate2 source [1] 1 2 5 1 3 , information Package Name BLF6G15L-500H BLF6G15LS-500H Description flanged balanced LDMOST ceramic package; 2 NXP Semiconductors
Original

5N50

Abstract: 100BA . 1mA 5V DC 50,000cycles 5 max. 40±2 for 500h 40±2 for 500h 20±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 12.5 , max. 350±5, 3s max. 260±5, 5±1s 60±2, 90 95%RH for 500h 1 0.7±0.3N
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SSCTL10600 SSCTL10400

SPVE110100

Abstract: SPVE110401 for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 5.8 mm W D H 100BA 3V DC
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SPVE110100 SPVE110600 SPVE110401 SPVE110801 SPVE110200 SPVE110900

QAE 21.2

Abstract: "CAZAC" for 500h 20±2 for 96h 40±2 for 500h 40±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 6.3 40±2, 90 95%RH for 96h 3.4 5 60±2, 90 95%RH for 500h 2.8 3.6 40±2, 90 95%RH for 96h 9 60±2, 90 95%RH for 500h 11 5.8 mm W D H 100BA 3V DC
ROHM
Original
QAE 21.2 ici MR 4020 MCH15 BACH15 MCH31 SC51029 SC51025 90-95YRH

TSS463

Abstract: Nitto MP8000 . 1mA 5V DC 50,000cycles 5 max. 40±2 for 500h 40±2 for 500h 20±2 for 96h 40±2 for 500h 85±2 for 500h 85±2 for 500h 85±2 for 96h 85±2 for 500h 60±2, 90 95%RH for 500h 12.5 , max. 350±5, 3s max. 260±5, 5±1s 60±2, 90 95%RH for 500h 1 0.7±0.3N
Temic Semiconductors
Original
TSS463 TSS461C Nitto MP8000 MARKING Z86 EIA-556-A HT Q100 temic gateway TSS463/TSS461C TS80C31X2/C32X2 BP70602

L500H

Abstract: F0401 0,4000H 0FC00H,400H DSPRAM, 0FA40H, 28H F0402 0,6000H 0FB00H,500H DSPRAM, 0FA40H, 28H F0403 0,8000H 0FB00H,500H DSPRAM, 0FA40H, 28H F0410 0,2000H 0FD00H,300H DSPRAM, 0FA40H, 28H F0411 0,4000H 0FC00H,400H DSPRAM, 0FA40H, 28H F0412 0,6000H 0FB00H,500H DSPRAM, 0FA40H, 28H F0413 0,8000H 0FB00H,500H DSPRAM, 0FA40H, 28H F0420 0,2000H 0FD00H,300H DSPRAM, 0FA40H, 28H F0421 0,4000H 0FC00H,400H DSPRAM, 0FA40H, 28H F0422 0,6000H 0FB00H,500H DSPRAM, 0FA40H, 28H
International Rectifier
Original
L500H I27308 GB10RF60K E78996 50/60H

78f1164

Abstract: 78F0881 0,4000H 0,6000H 0,8000H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FD00H,300H 0FC00H,400H 0FB00H,500H 0FB00H,500H 0FC00H,400H 0FB00H,500H 0FB00H,500H 78K0 78K0/LE3 µPD78F0444 , × × F0445 0,0F000H 0FB00H,500H 78K0 78K0 78K0 78K0/LE3 , × × × F0451 F0452 F0453 0,4000H 0,6000H 0,8000H 0FC00H,400H 0FB00H,500H
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Original
78f1164 78F1165 78f1826 78F0511A 78F1804 78f0546 78K0R/K V850ES/S V850ES/J V850ES/F 78K0R/F 78K0R/L

ITS9000

Abstract: schlumberger ITS9000 500h 85%2: for 85%2: for 96h 500h 60%2:, 90 to 40%2:, 90 to 95%RH for 96h 95%RH for 500h 6.3 3.4 5 W 3 D (mm) 4 4.9 2.3 H 40: to 185: ¡ 100BA 3V DC 500m , ,000cycles 1 max. 10,000cycles 100m max. 40%2: for 500h 40%2: for 96h 40%2: for 500h 85%2: for 500h 85%2: for 96h 85%2: for 500h 60%2:, 90 to 95%RH for 500h 2.8 3.6 40%2:, 90 to 95%RH for 96h 9 60%2:, 90 to 95%RH for 500h 11 5.8 3.5 4.2 3.5 1.5 1.2 4.5 7
Temic Semiconductors
Original
TSC87251G2D TSC83251G2D ITS9000 schlumberger ITS9000 sumitomo silver epoxy TEMIC DATABOOK 0.6 um cmos process intel 80 82

isopropylalcohol

Abstract: NIS04JR10TRF 2 max. 50,000cycles 1 max. 100,000cycles 2 max. 40%2: for 20%2: for 96h 500h 85%2: for 85%2: for 96h 500h 60%2:, 90 to 40%2:, 90 to 95%RH for 96h 95%RH for 500h 6.3 3.4 5 W , ,000cycles 100m max. 40%2: for 500h 40%2: for 96h 40%2: for 500h 85%2: for 500h 85%2: for 96h 85%2: for 500h 60%2:, 90 to 95%RH for 500h 2.8 3.6 40%2:, 90 to 95%RH for 96h 9 60%2:, 90 to 95%RH for 500h 11 5.8 3.5 4.2 3.5 1.5 1.2 4.5 7 300%10:, 1 3
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OCR Scan
NIS04JR10TRF isopropylalcohol NIS04 JEDEC-STD-020C
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