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48 13nhg mosfet

Catalog Datasheet MFG & Type PDF Document Tags

13nhg

Abstract: 48 13nhg mosfet DIAGRAMS & PIN ASSIGNMENTS YWW 48 13NHG TA = 85°C TA = 25°C Pulsed Drain Current 4 4 YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RqJA (Note 2) TA = , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features ·Low RDS(on) to Minimize Conduction Losses ·Low Capacitance to Minimize Driver Losses ·Optimized Gate Charge to Minimize , Dissipation RqJA (Note 1) TA = 25°C PD 1.94 TA = 25°C ID 7.6 S N-CHANNEL MOSFET W
ON Semiconductor
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48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D 13nhg mosfet 369AA 369AC NTD4813NH/D

13nhg

Abstract: 48 13nhg mosfet ) MARKING DIAGRAMS & PIN ASSIGNMENTS YWW 48 13NHG TA = 85°C TA = 25°C Pulsed Drain Current 4 4 YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RqJA (Note , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate , N-CHANNEL MOSFET W Continuous Drain Current RqJA (Note 2) G A 4 1 2 5.9 1 3 PD
ON Semiconductor
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NTD4813NHT4G

13nhg

Abstract: 48 13nhg ASSIGNMENTS 4 Drain 4 Drain YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RJA (Note 2) TA = 85°C 4 Drain YWW 48 13NHG Continuous Drain Current RJA (Note 1 , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate , N-CHANNEL MOSFET A TA = 85°C 4 1 2 5.9 TA = 25°C PD 1.27 W Continuous Drain
ON Semiconductor
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NTD4813NH-1G

4813NH

Abstract: 13nhg 29 6 44.4 W A A °C A V/ns mJ W A W A Unit V V A G S N-CHANNEL MOSFET 4 1 2 3 DPAK CASE 369AA (Bent Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 48 13NHG 2 1 Drain 3 Gate , NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK · · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices
ON Semiconductor
Original
Abstract: Source dV/dt MARKING DIAGRAM & PIN ASSIGNMENT YWW 48 13NHG Power Dissipation RqJA (Note 2 , NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single Nâ'Channel, DPAK/IPAK Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AECâ'Q101 Qualified and PPAP Capable , Continuous Drain Current RqJA (Note 2) TA = 25°C ID 7.6 S Nâ'CHANNEL MOSFET A Steady ON Semiconductor
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Abstract: Industries, LLC, 2014 September, 2014 â' Rev. 4 4 Drain AYWW 48 13NHG Power Dissipation RqJA , NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single Nâ'Channel, DPAK/IPAK Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECâ'Q101 Qualified and PPAP Capable ON Semiconductor
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