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SPW47N60C3FKSA1 Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN visit Digikey Buy
SPW47N60C3 Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN visit Digikey Buy

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Part : SPW47N60C3 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 30 Best Price : $9.09 Price Each : $13.47
Part : SPW47N60C3 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 174 Best Price : $10.20 Price Each : $10.20
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47n60c3

Catalog Datasheet MFG & Type PDF Document Tags

47N60C3

Abstract: IXKH47N60C3 ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A RDS(on) = 70 m Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions , ) IXKH 47N60C3 Symbol gFS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , ,065B1 6,259,123B1 6,162,665 IXKH 47N60C3 Fig. 1. Output Characteristics @ 25 Deg. C 50 180 , Centigrade 125 150 IXKH 47N60C3 Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 100
IXYS
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ID100 IXKH47N60C3 smps high power 47n60 728B1

47n60c3

Abstract: P-TO247 - 47N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol
Infineon Technologies
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P-TO247 47N60C P-TO-247 47n60c3 infineon 2449

47n60c3

Abstract: 47n60 Final data SPW47N60C3 VDS @ Tjmax RDS(on) ID 650 0.07 47 P-TO247 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances V A Type SPW47N60C3 Package P-TO247 Ordering Code Q67040-S4491 Marking 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C
Infineon Technologies
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47n60c3

Abstract: SPW47N60C3 SPW47N60C3 Preliminary data Cool MOSTM=Power Transistor = Feature ·=New revolutionary high voltage technology Product Summary · Ultra low gate charge VDS @ Tjmax 650 V ·=Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A ·=Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous
Infineon Technologies
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tp 2116 SDP06S60 Pulse-10

SPW47N60C3

Abstract: 47n60c3 SPW47N60C3 Preliminary data Cool MOSâ"¢ Power Transistor Feature â'¢ New revolutionary high voltage technology Product Summary â'¢ Ultra low gate charge VDS @ Tjmax 650 V â'¢ Periodic avalanche rated RDS(on) 0.07 â"¦ â'¢ Extreme dv/dt rated ID 47 A â'¢ Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified
Infineon Technologies
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47n60C3

Abstract: 47N60C SPW47N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS(on) 0.07 ID 47 A Feature · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter
Infineon Technologies
Original

47n60c3

Abstract: SPW47N60C3 SPW47N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.07 ID Feature 650 47 A · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings Parameter Symbol Continuous drain current
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47n60c3

Abstract: SPW47N60C3 SPW47N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.07 ID Feature 650 47 A · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings Parameter Symbol Continuous drain current Value ID
Infineon Technologies
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617 300

47n60C3

Abstract: SPW47N60C3 SPW47N60C3 Final data Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology Product Summary · Ultra low gate charge VDS @ Tjmax 650 V · Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A · Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous
Infineon Technologies
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