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CD4503BKNSR Intersil Corporation CD4503BKNSR visit Intersil
ISL54503IHZ-T Intersil Corporation +1.8V to +5.5V, 2.5?, Single SPDT Analog Switch; SOT6, uTDFN6; Temp Range: -40° to 85°C visit Intersil Buy
CD4503BKMSR Intersil Corporation 4000/14000/40000 SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDFP16, CERAMIC, FP-16 visit Intersil
CD4503BDMSR Intersil Corporation 4000/14000/40000 SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP16, BRAZE SEALED, DIP-16 visit Intersil
ISL54503IRUZ-T Intersil Corporation +1.8V to +5.5V, 2.5?, Single SPDT Analog Switch; SOT6, uTDFN6; Temp Range: -40° to 85°C visit Intersil Buy
THS4503CDRB Texas Instruments OP-AMP, 3000uV OFFSET-MAX, 300MHz BAND WIDTH, PDSO8, PLASTIC, SON-8 visit Texas Instruments

4503 MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

AQW41

Abstract: AQS22 , 61*H AQW210HL AQV23 AQV10, 11, 20 APV11, 21(MOSFET) SIL 510mA 2mA AQZ10 , 9.7±0.1 ±1 100 16.0±0.1 1.55±0.1 2.0±0.1 4.5±0.3 1, 2AQYAX() 3, 4AQYAZ ±0.5 , 1.75±0.1 7.5±0.1 16 ±0.3 DIP 6 9.2±0.1 12 ±0.1 4.5±0.3 4±0.1 1.6±0.1 2±0.1 , panasonic-denko.co.jp/ac/c ±0.5 13 17.5±2.0 2 ±0.5 PhotoMOS 0.3±0.05 MOSFET DIP 6 1.50.1 0 1.75±0.1 10.1±0.1 7.5±0.1 16 ±0.3 9.2±0.1 12 ±0.1 4.5±0.3 ±0.8 21
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AQY21 AQV21 AQW21 AQW41 AQW25 AQS22 AQY21H AQW21sop AQV22 AQY22 AQV25

Z4401

Abstract: IC Z4401 AQV APV MOSFET D I P A C B pin , 330±2 9.7±0.1 ±1 100 16.0±0.1 4.5±0.3 2.0±0.1 1.55±0.1 AQYAX AQYAZ ±0.5 13 25.5 ±2.0 1.7 ±0.8 ±0.8 21 ±1 80 0.3±0.05 MOSFET DIP pin , 4.5±0.3 2±0.1 4±0.1 1.6±0.1 APV AX APV AZ ±0.5 13 17.5±2.0 2 ±0.5 , MOSFET MOSFET MOSFET MOSFET k 1 - DC V DC A DC V
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Z4401 IC Z4401 IC 1751 PIN 5 DAQZ aqv 250

AQY212G2S

Abstract: AQV255GS , 21 Series (MOSFET drivers) AQY21, 41 Series AQY22 Series AQV21, 41 Series AQV22 Series AQV25, 45 , . 100±1 dia. 3.937±.039 dia. 9.7±0.1 .382±.004 16.0±0.1 .630±.004 4.5±0.3 .177±.012 2.0±0.1 , 4.5±0.3 .177±.012 13.5±2.0 .531±.079 7.5±0.1 .295±.004 16±0.3 10.3±0.1 .630±.012 .406±.004 , dia. ­0 0.3±0.05 .012±.002 DIP 6-pin Surface mount terminal (Photovoltaic MOSFET driver , 4.5±0.3 .177±.012 2±0.5 .079±.020 (1) When picked from 1/2/3-pin side: Part No. APV1122AX (Shown
Panasonic
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AQY212G2S AQV255GS 24v 6-pin smd AQS221 AQY210HL panasonic varistor AQZ205D AQZ207D AQZ204D AQZ262 AQZ264

AQY212G2S

Abstract: AQY225R2V 2±1.0 .079±.039 2±0.5 .079±.020 9.7±0.1 .382±.004 16.0±0.1 .630±.004 4.5±0.3 .177±.012 , tape 4.5±0.3 .177±.012 2±0.2 .079±.008 21±0.8 .827±.031 80±1 dia. 3.150±.039 dia. 7.5±0.1 .295±.004 16±0.3 .630±.012 9.2±0.1 .362±.004 Device mounted on tape 4.5±0.3 .177±.012 , type (Photovoltaic MOSFET driver) 2±0.5 .079±.020 17.5±2.0 .689±.079 7.5±0.1 .295±.004 16±0.3 .630±.012 9.2±0.1 .362±.004 Device mounted on tape 4.5±0.3 .177±.012 13±0.5 dia
Panasonic
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AQV112KL AQY221N3V AQY225R2V 2803 relay driver ic ic a 4503 8 PIN AQV252G photovoltaic mosfet driver varistor 1305 AQY2212V AQY2212S AK-225

SUR70N02-04P

Abstract: SPICE Device Model SUR70N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175° MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Model Subcircuit) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model , , VGS = 0 V 0.91 1.2 4503 4500 1550 1520 Unit Static Gate Threshold Voltage
Vishay Siliconix
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4503 MOSFET

Abstract: a 4503 data sheet SPICE Device Model SUD70N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175° MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model , IS = 50 A, VGS = 0 V 0.91 1.2 4503 4500 1550 1520 Unit Static Gate Threshold
Vishay Siliconix
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4503 MOSFET a 4503 data sheet

pulse transformer 4503

Abstract: ISOLATION PULSE TRANSFORMER 4503 subsystems or components as shown in Figure 1. The key components of this topology include IGBT/ MOSFET , rectifier bridge Single Phase OR R1 + IGBT / MOSFET Inverters Dynamic Brake Optical , application-specific applications such as inverter (IGBT/MOSFET, and IPM) gate drives. voltages, and eliminate , Used? Driving the gate of an IGBT/ MOSFET is one of the primary areas where the optocoupler drive is , Various Gate Drive Topologies Driving an IGBT or a MOSFET entails supplying enough current to the gate
Avago Technologies
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pulse transformer 4503 ISOLATION PULSE TRANSFORMER 4503 treadmill motor controller 6 pin pulse transformer 4503 circuit diagram chopper circuit with hcpl 3120 inverter IGBT driver hcpl3120 AN1078 5965-5853E 5989-1059EN

SUD70N02-04P

Abstract: SPICE Device Model SUD70N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175° MOSFET ° CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Model Subcircuit) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model , , VGS = 0 V 0.91 1.2 4503 4500 Unit Static Gate Threshold Voltage b On-State
Vishay Siliconix
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photomos AQV214 smd 4-pin

Abstract: RH 24V RELAY Form B) This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD , 4.5±0.3 .177±.012 2.0±0.1 .079±.004 1.55±0.1 dia .061±.004 dia 13±0.5 dia. .512±.020 dia , on tape 4.5±0.3 .177±.012 16.0±0.1 .630±.004 1.55±0.1 dia .061±.004 dia 2.0±0.1 , .630±.012 Device mounted on tape 12±0.1 .472±.004 4.5±0.3 .177±.012 1.7±0.8 .067±.031 1.75±0.1 .069±.004 7.5±0.1 .295±.004 16±0.3 .630±.012 12±0.1 .472±.004 4.5±0.3 .177±.012
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AQY410S AQZ202V photomos AQV214 smd 4-pin RH 24V RELAY smd diode 1001 cross reference 12v relay 8 pin Ultrasonic Cleaning power generator schematic AQV41E AQZ40 AQV453 AQV454 AQW65

treadmill motor controller

Abstract: ISOLATION PULSE TRANSFORMER 4503 topology include IGBT/ MOSFET three-phase inverters (Q1, Q2, Q3, Q4, Q5, Q6), singlephase or three-phase , control electronics, and application-specific applications such as inverter (IGBT/MOSFET, and IPM) gate , . Where Is Optocoupler Isolation Used? Driving the gate of an IGBT/ MOSFET is one of the primary areas , Gate Drive Topologies Driving an IGBT or a MOSFET entails supplying enough current to the gate to , the peak output current needed to switch the IGBT or MOSFET to the low-impedance state. This peak
Agilent Technologies
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A 3150 igbt driver HCPL 454 HCPL454 sump pump level controller circuit diagram sump pump circuit diagram circuit diagram of treadmill control board 5980-1297E

Ultrasonic Cleaning power generator schematic

Abstract: TRANSISTOR SMD catalog 4.5±0.3 .177±.012 2.0±0.1 .079±.004 1.55±0.1 dia .061±.004 dia 13±0.5 dia. .512±.020 dia , on tape 4.5±0.3 .177±.012 16.0±0.1 .630±.004 1.55±0.1 dia .061±.004 dia 2.0±0.1 , .630±.012 Device mounted on tape 12±0.1 .472±.004 4.5±0.3 .177±.012 1.7±0.8 .067±.031 1.75±0.1 .069±.004 7.5±0.1 .295±.004 16±0.3 .630±.012 12±0.1 .472±.004 4.5±0.3 .177±.012 , power MOSFET combination. Security Equipment Medical equipment which processes low level
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AQW610SX AQW610SZ TRANSISTOR SMD catalog AQV258 smoke detector schematic diagrams schematic diagram for power line ac voltage conditioner Transistors Diodes smd e2 triac triggering ic AQW610S AQV454H AQW454 AQV414
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS NCE4503 N-and P-Channel Enhancement Mode Power MOSFET SOP8 DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount , 2 7 D1 S2 3 6 D2 G2 4 5 D2 MARKING: 4503 Maximum ratings ( Ta Jiangsu Changjiang Electronics Technology
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NCE4503-P-C
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS NCE4503 N-and P-Channel Enhancement Mode Power MOSFET SOP8 DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount , 2 7 D1 S2 3 6 D2 G2 4 5 D2 MARKING: 4503 Maximum ratings ( Ta Jiangsu Changjiang Electronics Technology
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smoke detector schematic diagrams

Abstract: schematic diagram for ac power line voltage conditioner low at 2.8 (typ.) 2. 1 Form B This has been realized thanks to the built-in MOSFET processed by our , device directly drives a power MOSFET. Semiconductor relay incorporating the advantages of both electromagnetic OUT relays and semiconductors. LED OUT Power MOSFET Optoelectronic device IN (­ , circuit and charges the MOSFET gate on the output side. When the voltage supplied from photoelectric element decrease, the control circuit rapidly discharges the gate charge of MOSFET. When the MOSFET
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AQZ404 LR26550 schematic diagram for ac power line voltage conditioner Solar Charge Controller diagram ultrasonic range meter IC 1.25mm Pitch smd dip switch E43149 AQW414 AQW61 AQY414S

IRFP256

Abstract: H30E2 followed. Copyright © Harris Corporation 1991 p t|e K liim h e r 4-503 I M 3 0 2 2 7 1 0 0 5 4 2 , . (MOSFET switching times are essentially independent of operating temperature) Vq s = 10V, lD = 23A, VDS = , source lead, 6mm (0.25" ) from package to source bonding pad. Modified MOSFET symbol showing the internal , Current (Body Diode) Pulse Source Current (Body Diode) (Note 3) 's is m Modified MOSFET symbol showing
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IRFP256 H30E2 IRFP 620 irfp254 H30E271 IRFP254 IRFP255 IRFP257

relay 5 pin 12v 6a

Abstract: Ultrasonic Cleaning power generator schematic directly drives a power MOSFET. Semiconductor relay incorporating the advantages of both electromagnetic OUT relays and semiconductors. LED OUT Power MOSFET Optoelectronic device IN (­) IN (+ , circuit and charges the MOSFET gate on the output side. When the voltage supplied from photoelectric element decrease, the control circuit rapidly discharges the gate charge of MOSFET. When the MOSFET gate voltage supplied from the photoelectric element reaches a preset voltage value, the MOSFET
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relay 5 pin 12v 6a ethanol gas sensor 1A smd mosfet 1B 4 SMD how to interface optocoupler with triac S 354 OPTOCOUPLER AQW27 AQW272 AQW275 AQW277 AQW274 AQW272A

4835 mosfet

Abstract: 4835 ic " ("*/¢ 74 $0.1&/4"5*0/$"1*/Q'$$ 3$, 4:.&53*$"-$0.1 3&4*4503 , MOSFET output stage of the PA78 is not limited by second breakdown considerations as in bipolar output , protected against transient flyback by the parasitic body diodes of the output stage MOSFET structure
Apex Microtechnology
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4835 mosfet 4835 ic EK60U PA78U

surface mount transistor ag qr

Abstract: amps ciss hen vd TMOS Power MOSFET Transistor Device Data 4-503 MTD4N20E TYPICAL ELECTRICAL CHARACTERISTICS , choices for future use and best overall value. REVI 4-502 Motorola TMOS Power MOSFET Transistor , 6. Draln-To-Source Leakage Current versus Voltage 4-504 Motorola TMOS Power MOSFET Transistor Device Data MTD4N20E POWER MOSFET SWITCHING Switching behavior is most easily m odeled and , speeds, parasitic circuit elements com plicate the analysis. The inductance of the MOSFET source lead
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OCR Scan
surface mount transistor ag qr amps ciss hen vd 0E-04 0E-03 0E-02 0E-01

wf-4

Abstract: 4835 ic 3&4*4503 */5&3/"-108&3%*44*1"5*0/8 70-5"(&%301'30.4611-: 7 108&3%&3"5*/( P , SAFE OPERATING AREA The MOSFET output stage of the PA86 is not limited by second breakdown , output stage MOSFET structure. However, for protection against sustained high energy flyback external
Apex Microtechnology
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wf-4 74PS74 PA86U

PA78EU

Abstract: 4835 mosfet " ("*/¢ 74 $0.1&/4"5*0/$"1*/Q'$$ 3$, 4:.&53*$"-$0.1 3&4*4503 , MOSFET output stage of the PA78 is not limited by second breakdown considerations as in bipolar output , protected against transient flyback by the parasitic body diodes of the output stage MOSFET structure
Apex Microtechnology
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PA78EU
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