NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (V,N) Km MM»* (Fsw) (kHz) WS am aia »«tea CC) LM5000 LM5000 3.1V5 40Vft*5HBA«B ss»*®mm (pwm) km ¡SUÉ® «Bit ... | OCR Scan |
4 pages, |
TSSOP-16 mosfet k 2698 LM5070 LM5068 LM5020 la 7698 datasheet abstract |
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| Abstract: Power Transistors 2SD2420 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 VEBO 5 V Peak collector current ICP 8 IC 4 A 40 2.6�1 0.8�1 A Collector current 1.4�2 1.6�2 V Emitter to base voltage 13.7�2 4.2�2 ... | Original |
1 pages, |
2SD2420 2SD2420 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 BU406 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV's and CRT's ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCE ... | Original |
3 pages, |
crt horizontal deflection circuit BU406 400V switching transistor NPN Transistor 5A 400V npn transistor 400V 400V 100MA NPN transistor BU406 BU406 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU407 BU407 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV's and CRT's ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCE ... | Original |
2 pages, |
BU407 BU407 abstract |
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| Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.008 grams ( approx.) ... | Original |
3 pages, |
transistor af 178 BC817-25-6B 6C TRANSISTOR MARKING BC817 6B sot-23 datasheet abstract |
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| Abstract: BC817-16 BC817-16 THRU BC817-40 BC817-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.0 ... | Original |
3 pages, |
BC817-40 BC817-25 BC817-16 transistor 6c x BC817-16 abstract |
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| Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.008 grams ( approx.) ... | Original |
3 pages, |
BC817 datasheet abstract |
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| Abstract: ^xmc AN6308 AN6308, AN6308S AN6308S AN6308 AN6308, AN6308S AN6308S VTR Ti-a 'y^mfê/VTR Analog Switching Circuits um. m AN6308 AN6308, AN6308S AN6308S Ii. t'fi con-D rx-f y â- 4$ ^ • =t : 10 mhz -?=? -v h • X i 7f//Xh'-F : 70 ns typ. • i&mnmtl â- â- 13 mW typ. • WWM!± â- 5 V â- Features • Good frequency response: 10 MHz flat • High speed switching : 70 ns typ. • Low power consumption : 13 mW typ. • Supply voltage : 5 V y'a -y ^m/Block Diagram Output GND Input B r®-©-©-©-I NC ) Ã' KD-d)-®-0-1 ^cc Input A AN6308 AN6308 Unit : mm H ... | OCR Scan |
3 pages, |
AN6308S AN6308 AN6308 abstract |
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| Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D 3 l Weight: 0.008 grams ( app ... | Original |
3 pages, |
BC817 datasheet abstract |
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| Abstract: BU407FI BU407FI SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU407FI BU407FI is a silicon epitaxial planar NPN transistors in ISOWATT220 ISOWATT220 plastic package. It is a fast switching, high voltage device for use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computer terminals. 3 1 2 ISOWATT220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOL ... | Original |
4 pages, |
SGS-Thomson CRT COLOUR TV SCHEMATIC DIAGRAM CRT - COLOUR TV SCHEMATIC DIAGRAM BU407FI CRT TCL COLOUR TV SCHEMATIC DIAGRAM china tv schematic diagram BU407FI abstract |
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| Abstract: Power Transistors 2SD2420 2SD2420 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 VEBO 5 V Peak collector current ICP 8 A 1.4�2 1.6�2 V Emitter to base voltage 13.7�2 4.2�2 Solder Dip � High forward current transfer ratio hFE: 2 00 ... | Original |
2 pages, |
2SD2420 2SD2420 abstract |
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