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40Vft

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Abstract: (V,N) Km MM»* (Fsw) (kHz) WS am aia »«tea CC) LM5000 LM5000 3.1V5 40Vft*5HBA«B ss»*®mm (pwm) km ¡SUÉ® «Bit ... OCR Scan
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7 pages,
3545.36 Kb

TSSOP-16 mosfet k 2698 LM5070 LM5068 LM5020 lm5010 la 7698 datasheet abstract
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Abstract: Power Transistors 2SD2420 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 4.6�2 9.9�3 3.0�5 2.9�2 I Absolute Maximum Ratings TC = 25癈 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 VEBO 5 V Peak collector current ICP 8 IC 4 A 40 2.6�1 0.8�1 A Collector current 1.4�2 1.6�2 V Emitter to base voltage 13.7�2 4.2�2 ... Original
datasheet

1 pages,
43.54 Kb

2SD2420 2SD2420 abstract
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Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 BU406 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV's and CRT's ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCE ... Original
datasheet

3 pages,
109.61 Kb

BU406 crt horizontal deflection circuit 400V switching transistor NPN Transistor 5A 400V Transistor Transistor Power Horizontal npn transistor 400V 400V 100MA NPN transistor BU406 BU406 abstract
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Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU407 BU407 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV's and CRT's ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCE ... Original
datasheet

2 pages,
82.98 Kb

BU407 BU407 abstract
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Abstract: BC817-16 BC817-16 THRU BC817-40 BC817-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.0 ... Original
datasheet

3 pages,
214.79 Kb

BC817-40 BC817-25 BC817-16 transistor 6c x BC817-16 abstract
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Abstract: 2N5086/5087 2N5086/5087 AMPLIFIER TRANSISTOR · CoHector-Emitter VoHage: VCeo" 50V · Collector Dissipation: Pc (max)»625mW PNP EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA-25t:) C haracteristic Collector-Base Voltage Collector-Emttter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Sym bol VcBO VcEO V ebo ·c Pc Tj T sto Rating -50 -50 -3 -50 -625 150 - 5 5 -1 5 0 U nit V V V mA mW t 1.Emitter 2. Base ... OCR Scan
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2 pages,
88.98 Kb

2N5086 2N5086/5087 2N5086/5087 abstract
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Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.008 grams ( approx.) ... Original
datasheet

3 pages,
252.19 Kb

BC817 datasheet abstract
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Abstract: ^xmc AN6308 AN6308, AN6308S AN6308S AN6308 AN6308, AN6308S AN6308S VTR Ti-a 'y^mfê/VTR Analog Switching Circuits um. m AN6308 AN6308, AN6308S AN6308S Ii. t'fi con-D rx-f y - 4$ ^ • =t : 10 mhz -?=? -v h • X i 7f//Xh'-F : 70 ns typ. • i&mnmtl -- 13 mW typ. • WWM!± - 5 V - Features • Good frequency response: 10 MHz flat • High speed switching : 70 ns typ. • Low power consumption : 13 mW typ. • Supply voltage : 5 V y'a -y ^m/Block Diagram Output GND Input B r®-©-©-©-I NC ) ' KD-d)-®-0-1 ^cc Input A AN6308 AN6308 Unit : mm H ... OCR Scan
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3 pages,
62.37 Kb

AN6308S AN6308 AN6308 abstract
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Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D 3 l Weight: 0.008 grams ( app ... Original
datasheet

3 pages,
276.97 Kb

BC817 datasheet abstract
datasheet frame
Abstract: MCC BC817-16 BC817-16 THRU BC817-40 BC817-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.008 grams ( approx.) ... Original
datasheet

3 pages,
273.11 Kb

transistor af 178 BC817-25-6B 6C TRANSISTOR MARKING BC817 6B sot-23 datasheet abstract
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Abstract: BU407 BU407 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS s HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 BU407 is a silicon epitaxial planar NPN transistors in Jedec TO-220 plastic package. They are fast switching, high voltage devices foe use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computers terminals. 3 1 2 TO-220 INTERNAL SCHEMATIC D ... Original
datasheet

4 pages,
35.46 Kb

monochrome crt schematic BU407 BU407 abstract
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