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Part : XPC8255AZUIFBA200/133/66MHZ Supplier : Motorola Manufacturer : Bristol Electronics Stock : 4 Best Price : - Price Each : -
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33/66MH

Catalog Datasheet MFG & Type PDF Document Tags

IDT2305

Abstract: IDT2309 ) 140 I DD (mA) 3.3 33MH z 66MH z 100M Hz 60 80 33MH z 66MH z 100M Hz 60 40 , 54 54 Duty Cycle (% ) 58 56 Duty Cycle (% ) 58 52 33MH z 50 66MH z 100M Hz 48 52 33MH z 50 66MH z 100M Hz 133M Hz 48 46 46 44 44 42 42 40 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 , 54 52 33MH z 50 66MH z 100M Hz 133M Hz 48 46 46 44 44 42 42 40
Integrated Device Technology
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IDT2309 IDT2309-1 IDT2309-1H IDT2305 33MH 133MH SO16-8
Abstract: 54 52 50 48 46 44 42 40 33MH z 66MH z 100M Hz 133M Hz 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 66MH z 100M Hz 3 3.1 3.2 3.3 3.4 3.5 3.6 V DD (V) Duty Cycle vs Frequency (for , 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MHz 66MH z 100M Hz Duty C ycle (% ) 54 54 52 50 48 46 , loads over frequency - 3.3V, 25C ) I DD (m A) 33MH z 66MH z 100M Hz I DD (m A) 80 60 33MH z 66MH z 100M Hz 40 20 0 0 2 4 6 8 40 20 0 0 2 4 6 8 Num ber of Loaded Outputs Num ber Integrated Device Technology
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IDT2308 IDT2308-1 IDT2308-2 IDT2308-3 IDT2308-4 IDT2308-1H/

2308 multiplier

Abstract: 33MH 140 140 120 120 100 100 80 I DD (mA) 160 I DD (mA) 3.3 33MHz 66MH z , 56 56 54 Duty Cycle (% ) Duty Cycle (% ) 58 52 33MH z 66MH z 100M Hz 50 48 54 52 33MH z 66MH z 100M Hz 133M Hz 50 48 46 46 44 44 42 42 40 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 Duty Cycle vs , frequency - 3.3V, 25C ) 140 120 120 100 100 80 I DD (m A) 140 I DD (m A) 3.3
Integrated Device Technology
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IDT2308-1H 2308 multiplier IDT2308-5H SO16-10 2308-1H 2308-5H IDT2308-1DC IDT2308-1DCI
Abstract: frequency - 3.3V, 25C ) Duty Cycle (% ) 52 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MHz 100MHz Duty Cycle (% ) 54 54 52 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MHz 66MH z 100M , ) Duty C ycle (% ) 52 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MH z 100M Hz Duty C ycle (% ) 54 54 52 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MH z 100M Hz 133M Hz , (m A) I DD (m A) 80 60 80 60 33MH z 66MH z 100M Hz 33MH z 66MH z 100M Hz 40 20 0 0 Integrated Device Technology
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IDT2305-1 IDT2305-1H 2305-1H IDT2305-1DC IDT2305-1DCI IDT2305-1HDC
Abstract: I DD (m A) 3.3 33MH z 66MH z 100M Hz 60 80 33MH z 66MH z 100M Hz 60 40 , 50 48 52 33MHz 66MH z 100M Hz 133M Hz 50 48 46 46 44 44 42 42 40 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 D uty , (mA) 3.3 33MH z 66MHz 100MHz 60 80 33MH z 66MHz 100MHz 60 40 40 20 , ycle (% ) 60 58 Duty C ycle (% ) 60 52 33MH z 66MH z 100M Hz 50 48 52 33MH z Integrated Device Technology
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IDT2305-1HDCI

5 pins relay pin diagram for ups

Abstract: 133M ) 58 56 Duty Cycle (% ) 58 52 33MH z 66MH z 100M H z 50 48 52 33M H z 66M H z 100M Hz 133M Hz 50 48 46 46 44 44 42 42 40 40 3 3.1 3.2 3.3 , 10pF loads ove r tem perature - 3.3 V) 60 58 58 56 56 Duty Cycle (% ) 60 Duty Cycle , frequency - 3.3V, 2 5C) 140 120 120 100 100 80 I DD (mA) 140 I D D (mA) 3.3 33MH z 66MH z 100M H z 60 80 33MH z 66MH z 100M H z 60 40 40 20 20 0
Integrated Device Technology
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5 pins relay pin diagram for ups 133M AN-233 2309-1H IDT2309-1DC IDT2309-1DCI IDT2309-1HDC IDT2309-1HDCG IDT2309-1HDCI
Abstract: 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MH z 100M H z 3 3.1 3.2 3.3 3.4 3.5 3.6 V DD , DD (V) D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 56 Duty Cycle , D (mA) 33MH z 66MH z 100M H z I DD (mA) 33MH z 66MH z 100M H z 40 20 0 0 2 4 6 8 40 , 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 66M H z 100M Hz 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 Integrated Device Technology
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IDT2309-1HDCGI IDT2309-1HPG IDT2309-1HPGG IDT2309-1HPGI IDT2309-1HPGGI
Abstract: 3 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MH z 100M H z 3 3.1 3.2 3.3 3.4 3.5 3.6 , ) V DD (V) D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 56 Duty , D (mA) 33MH z 66MH z 100M H z I DD (mA) 33MH z 66MH z 100M H z 40 20 0 0 2 4 6 8 40 , 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 66M H z 100M Hz 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 Integrated Device Technology
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IDT2309-1DCG IDT2309-1DCGI

133M

Abstract: 33MH ) 140 I D D (mA) 3.3 33MH z 66MH z 100M H z 60 80 33MH z 66MH z 100M H z 60 , 54 54 Duty Cycle (% ) 58 56 Duty Cycle (% ) 58 52 33MH z 66MH z 100M H z 50 , 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 58 56 56 Duty , 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 Duty
Integrated Device Technology
Original
Abstract: ) 140 I D D (mA) 3.3 33MH z 66MH z 100M H z 60 80 33MH z 66MH z 100M H z 60 , 54 54 Duty Cycle (% ) 58 56 Duty Cycle (% ) 58 52 33MH z 66MH z 100M H z 50 , 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 58 56 56 Duty , 40 3 3.1 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 Duty Integrated Device Technology
Original
Abstract: 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 33MH z 66MH z 100M H z 3 3.1 3.2 3.3 3.4 3.5 , (% ) V DD (V) D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 56 , D (mA) 33MH z 66MH z 100M H z I DD (mA) 33MH z 66MH z 100M H z 40 20 0 0 2 4 6 8 40 , 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 3.6 66M H z 100M Hz 50 48 46 44 42 40 3 3.1 3.2 3.3 3.4 3.5 Integrated Device Technology
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133M

Abstract: 33MH Duty Cycle (% ) 58 56 Duty Cycle (% ) 58 52 33MH z 66MH z 100M H z 50 48 52 33M , 3.2 3.3 3.4 3.5 3 3.6 3.1 3.2 V DD (V) 3.5 3.6 D uty C ycle vs Frequ ency (for 10pF loads ove r tem perature - 3.3 V) 60 58 58 56 56 Duty Cycle (% ) 60 , frequency - 3.3V, 2 5C) 140 120 120 100 100 80 I DD (mA) 140 I D D (mA) 3.3 33MH z 66MH z 100M H z 60 80 33MH z 66MH z 100M H z 60 40 40 20 20 0
Integrated Device Technology
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U-09-01

Ferroxcube core

Abstract: PT8864 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15E 0 § fc.3i.72S4 000013^ S | MOTOROLA SC XSTRS/R F r-33 The RF Line NPN Silicon VHF Power Transistors . designed for 12.5 Volt, mid-band large-signal amplifier applications In industrial and commercial FM equipment operating In the 40 to 100 MHz , ) Figure 1, Broadband Pout versus Frequency 15E D § b3fc.72S4 DOñólMO 1 | MOTOROLA SC XSTRS/R F r- 33-/3 TYPICAL CHARACTERISTICS f = 66MH f =
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OCR Scan
PT8864 PT8864A Ferroxcube core VK21107-3B C3-250 145D-01 16AWG VK211-073B

133M

Abstract: 33MH 5C) 140 120 120 100 100 80 I DD (mA) 140 I D D (mA) 3.3 33MH z 66MH z 100M H z 60 80 33MH z 66MH z 100M H z 60 40 40 20 20 0 0 0 2 4 , Duty Cycle (% ) 58 52 33MH z 66MH z 100M H z 50 48 52 33M H z 66M H z 100M Hz 133M Hz 50 48 46 46 44 44 42 42 40 40 3 3.1 3.2 3.3 3.4 3.5 , r tem perature - 3.3 V) 60 58 58 56 56 Duty Cycle (% ) 60 Duty Cycle (% ) 3.4
Integrated Device Technology
Original
Abstract: H» Vtb aSBSbDS Semiconductor Group DCH3:i.33 7 5 b 844 Values Unit 43 34 V V , 1.9 A, ZL =66mH, O il /L = 2.8 A, ZL =66mH, O il /L =4.4 A, ZL =66mH, 0£2 one channel: two , bb(under) - 0.2 - V Vbb(ovet) Vbb(o rst) A Vbtyover) V Z) bb(A 34 33 42 -
OCR Scan
00T313E BTS712N1 0D13144 712N1 P-DSO-20-9 Q67060-S7001-A2

diode on 026 LG

Abstract: APT10026JNR All Ratings: Tc = 25°C unless otherwise specified. APT10026JNR 1000 33 Amps 132 ±20 ±30 690 5.52 -55 to 150 5C 300 33 30 mJ 3600 Amps Volts Watts W/°C UNIT Volts Continuous Drain Current @ Tc = 25 , 10V) APT10026JNR MIN 1000 33 TYP MAX UNIT Volts Amps id(ON) Rds(ON) Drain-Source , 97702-1035 F-33700 Merignac - France Page 60 Phone;{541)382-8028 FAX: (541) 388-0364 Phone: (33) 57 92 15 15 FAX: (33) 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol C ISS C oss APT10026JNR Test
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OCR Scan
diode on 026 LG E145592 MIL-STD-750
Abstract: ISOTOP® PACKAGE All Ratings: Tc = 25°C unless otherwise specified. APT10026JNR 1000 33 Amps 132 ±20 Volts ±30 690 5.52 -5 5 to 150 =C 300 33 30 mJ 3600 Amps Watts W/°C UNIT Volts N-CHANNEL ENHANCEMENT , esistance® APT10026JNR = 0V, I = 250uA) APT10026JNR MIN 1000 33 TYP MAX UNIT Volts Amps Id , BAT B4 33700 Merignac - France EUROPE Phone 33 56 34 34 71 FAX . . 33 56 47 97 61 DYNAMIC CH AR , APT10026JNR TYP MAX 33 UNIT 's Amps APT10026JNR 132 'sM V SD *rr Q rr 1.3 1300 29 2600 -
OCR Scan

APT10026JNR

Abstract: APT10026 APT10026JNR UNIT vdss Drain-Source Voltage 1000 Volts 'd Continuous Drain Current @ Tc = 25°C 33 Amps 'dm , Case for 10 Sec. 300 â ar Avalanche Current © (Repetitive and Non-Repetitive) 33 Amps ear , (ON) Max, VGg = 10V) APT10026JNR 33 Amps Rds(ON) Drain-Source On-State Resistance ® (VGS = , -33700 Merignac - France Phone: (33) 57 92 15 15 FAX: (33) 56 47 97 61 Paee 60 â I â¡257ciacl DDOlbbfi Ell m , 33 Amps 'SM Pulsed Source Current © (Body Diode) APT10026JNR 132 VSD Diode Forward
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OCR Scan
APT10026
Abstract: Continuous Drain Current @ Tc = 25°C 33 â'™dm Pulsed Drain Current © 132 V GS Gate-Source , " from Case for 10 Sec. Avalanche Current © (Repetitive and Non-Repetitive) 33 ^ ar Repetitive , © APT10026JNR TYP MAX Volts 33 Amps (VDS > lD(ON) x Rds(ON) Max, VQg = 10V) Rds , Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 57 92 15 15 FAX: (33) 56 47 97 61 , Continuous Source Current (Body Diode) APT10026JNR 33 Pulsed Source Current © (Body Diode -
OCR Scan
IL-STD-750

diode zener ZD 621

Abstract: BTS711L1 = 12V, Ti'.start = 150°C5', /L = 1.9 A, ZL = 66mH, 0£2 one channel: /l = 2.8 A, ZL =66mH, 0Q two parallel channels: /l = 4.4A, Zl = 66mH, 0£2 four parallel channels: see diagrams on page 628 and page 629 , restart 7j =-40. .+150°C Vbb(o ret) 33 - V Overvoltage hysteresis 7] =-40.+150°C A Vbb(over
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OCR Scan
diode zener ZD 621 BTS711L1 BTS 629 A bts712l1 712L1 siemens 10e 0-S7001-A2
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