NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PD - 97785 IRFH7107PbF HEXFETо Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 8.5 48 0.6 75 , ннн -8.7 ннн ннн ннн ннн ннн 48 10 4.0 15 19 19 19 0.6 9.1 12 20 6.5 3110 365 165 Max. Units , , VGS = 10V ID = 45A RG=1.8 VGS = 0V VDS = 25V = 1.0MHz Max. 106 45 Conditions MOSFET symbol showing , D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-005 0.0001 0.001 1E-006 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective ... | Original |
9 pages, |
3110 0001 mosfet datasheet abstract |
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| Abstract: PD- 93843A IRF7463 IRF7463 SMPS MOSFET HEXFETо Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS(on) max ID 30V 0.008 14A , ннн ннн ннн ннн ннн Typ. ннн 34 7.5 13 20 16 41 44 3110 850 130 Max. Units , 99 1.2 96 150 A V ns nC Conditions MOSFET symbol showing the G integral reverse , P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse ... | Original |
7 pages, |
IRF7463 3110 0001 mosfet IRF7463 abstract |
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| Abstract: UltraFastTM linear regulator controller drives a power MOSFET pass transistor, forming a very wide bandwidth , Power MOSFET IR (310) 322-3331 R12 1 CR10-511J-T CR10-511J-T 51.1 1/10W 1/10W 1% Chip Resistor TAD , Regulator Controller LTC (408) 432-1900 U3 1 214 320 3110 PGA 320 Pin ZIF Socket , power MOSFET Q6. The FET is operated in its saturated region (as opposed to its ohmic region), where it , the MOSFET as close to the load as possible. This will minimize the series inductance between the FET ... | Original |
8 pages, |
TPO610T TP0610T Q15A power mosfet IR LT1575 IRFZ24 2N7002 3110 0001 mosfet DC136A DC136A abstract |
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| Abstract: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 AUIRFP4004 HEXFETо Power MOSFET Features l l l l l l , MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon , 145 330 ннн ннн ннн ннн 6.8 59 370 160 190 8920 2360 930 2860 3110 ннн ннн , Units ннн ннн 350 ннн ннн 1390 A Conditions MOSFET symbol showing the integral , 0.000011 0.0585 0.1601 2 1 i (sec) 0.0123 0.1693 C Ci= i/Ri Ci i/Ri 0.001 ... | Original |
11 pages, |
AN-994 3110 0001 mosfet AUFP4004 AUIRFP4004 AUIRFP4004 abstract |
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| Abstract: power supplies commonly specify MOSFET switches and therefore need control circuits with outputs capable of directly driving MOSFET switches. The TL598 TL598 control circuit was designed with this capability to , device. Introduction Designers of switching power supplies commonly specify power MOSFET switches that , directly driving power MOSFET switches and extra output circuitry must be added. To eliminate this need for , signal ground and provide good rise and fall time performance for power MOSFET control. The error ... | OCR Scan |
38 pages, |
5v 10A tl494 TL494 pin details tl494 schematic diagram dc dc tl494 schematics 12v 10A tl494 SCHEMATIC circuit scr oscillator tl494 PWM dc to dc boost regulator hahn transformer 12V 10A voltage regulators with TL494 tl494 ic for boost converter converter dc-dc tl494 TL598 TL598 TL598 abstract |
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| Abstract: . 31 iv Abstract Designers of switching power supplies commonly specify MOSFET switches and therefore need control circuits with outputs capable of directly driving MOSFET switches. The TL598 TL598 control , commonly specify power MOSFET switches that operate at frequencies equal to or greater than 60 kHz, for the , , are not configured for directly driving power MOSFET switches and extra output circuitry must be , performance for power MOSFET control. The error amplifier has a common-mode voltage range from - 0.3 V to Vq^ ... | OCR Scan |
38 pages, |
tl598 application TL598 BLOCK SCHEMATIC OF TL494 TL494 circuit testing system 3110 0001 mosfet AIE MAGNETICS TL494 practical project circuit hahn transformer BV 12v 10A tl494 converter ic tl494 mosfet CA-198 12V 10A voltage regulators with TL494 TL598 abstract |
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| Abstract: Current into BATT VOUT = +3.5V, VBATT = +2V, V SHDN = 0 0.001 1 uA Reverse Battery Current , 2.980 3.110 RST Threshold MAX1833EUT/ MAX1833EUT/ MAX1835EUT MAX1835EUT, falling edge MAX1833ETT30 MAX1833ETT30 RST Voltage , Current Efficiency TA = +25°C 0.2 0.1 100 1 1 100 100 0.001 10 V nA nA uA , MOSFET switch drain and synchronous rectifier P-channel switch drain. LX has reverse battery protection. , MOSFET turns on and shunts the MOSFET body diode. As a result, the rectifier voltage drop is ... | Original |
12 pages, |
datasheet abstract |
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| Abstract: Shutdown Current into BATT VOUT = +3.5V, VBATT = +2V, V SHDN = 0 0.001 1 uA Reverse Battery , 150 uA RST Threshold MAX1833/ MAX1833/ MAX1835 MAX1835, falling edge 2.980 3.110 RST Voltage Low , TA = -40°C to +85°C TA = +25°C TA = -40°C to +85°C 0.2 0.1 100 1 1 100 100 0.001 , MOSFET switch drain and synchronous rectifier P-channel switch drain. LX has reverse battery protection. , MOSFET turns on and shunts the MOSFET body diode. As a result, the rectifier voltage drop is ... | Original |
10 pages, |
SOT23 N-Channel mark 6 battery protection sot23-6 MAX1832 MAX1832EUT-T MAX1832EVKIT MAX1833EUT-T MAX1834EUT-T MAX1835 MAX1835EUT-T MOSFET N SOT23-6 MOSFET sot23-6 one cell battery protection ic diagram 52 sot23-6 datasheet abstract |
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| Abstract: , VBATT = +2V, V SHDN = 0 0.001 1 uA Reverse Battery Current into BATT VOUT = 0, VBATT = V , 2.980 3.110 RST Threshold RST Voltage Low TA = +25°C 2.830 TA = -40°C to +85°C 2.800 , 0.2 0.1 100 1 1 100 100 0.001 10 V nA nA uA VBATT = +2V, VOUT = +3.3V , MOSFET switch drain and synchronous rectifier P-channel switch drain. LX has reverse battery protection. , MOSFET turns on and shunts the MOSFET body diode. As a result, the rectifier voltage drop is ... | Original |
10 pages, |
MAX1835EUT-T MAX1835 MAX1834EUT-T MAX1833EUT-T MAX1832EVKIT MAX1832EUT-T MAX1832 1B SOT23-6 datasheet abstract |
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| Abstract: +3.5V, VFB = +1.3V Shutdown Current into BATT VOUT = +3.5V, VBATT = +2V, V SHDN = 0 0.001 1 , 52 150 uA 2.980 3.110 RST Threshold MAX1833EUT/ MAX1833EUT/ MAX1835EUT MAX1835EUT, falling edge , 0.001 10 V nA nA uA VBATT = +2V, VOUT = +3.3V 150 mA VBATT = +2V, VOUT = +3.3V , MOSFET switch drain and synchronous rectifier P-channel switch drain. LX has reverse battery protection. , MOSFET turns on and shunts the MOSFET body diode. As a result, the rectifier voltage drop is ... | Original |
12 pages, |
MAX1835 MAX1833ETT30 MAX1832EVKIT MAX1832EUT-T MAX1832 MAX183 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| S M1 1 2 3 3 NMOS L = 1E-006 1E-006 1E-006 1E-006 W = 1E-006 1E-006 1E-006 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS DLIM D IS = 0.0001 .ENDS *Diodes DMG8880LSS DMG8880LSS DMG8880LSS DMG8880LSS Spice Model v1.0 Last Revised 2010 3 NMOS L = 1E-006 1E-006 1E-006 1E-006 W = 1E-006 1E-006 1E-006 1E-006 RD 10 1 0.01007 RS 30 3 0.001 RG 20 2 2.86 CGS 2 3 4.495E SSS Spice Model v1.0 Last Revised 2010/6/24 *SRC=DMN3200U DMN3200U DMN3200U DMN3200U;DI_DMN3200U DMN3200U DMN3200U DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms Diodes Inc MOSFET .MODEL DI_DMN3200U DMN3200U DMN3200U DMN3200U NMOS( LEVEL=1 VTO=1.00 KP=11.4 GAMMA=1.24 + PHI=.75 www.datasheetarchive.com/files/diodes-inc/spice-model/mosfets_n-channel_n-channel-30v.txt |
Diodes, Inc. | 18/10/2012 | 53.69 Kb | TXT | mosfets_n-channel_n-channel-30v.txt |
| -channel MOSFETs to select from an AC adapter and dual battery sources for charge and discharge. The selection is from 1.25V to 18V (MAX1745 MAX1745 MAX1745 MAX1745). The MAX1744/MAX1745 MAX1744/MAX1745 MAX1744/MAX1745 MAX1744/MAX1745 use an external P-channel MOSFET to allow high output voltage across the fan with an external MOSFET or bipolar transistor. (August 3, 2000) Complete Press www.datasheetarchive.com/files/maxim/0001/new_prod.htm |
Maxim | 04/04/2001 | 189.92 Kb | HTM | new_prod.htm |
| 4.200e-02 2.704e-09 3.110e-13 14 B5 CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO 4.600e-02 2.392e-09 ] [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = .5 | | Voltage I(typ) I -02 1.4052e-01 | [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = 1 | | Voltage 1.4820e-02 1.0001e-03 4.9376e-02 1.5900e+00 1.6224e-02 1.3245e 1.7826e-01 1.1479e-01 2.4870e-01 | [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = 1 www.datasheetarchive.com/download/53744352-917445ZC/scdm055.zip (sn74cb3t3245.ibs) |
Texas Instruments | 07/08/2011 | 26.68 Kb | ZIP | scdm055.zip |
| 4.200e-02 2.704e-09 3.110e-13 14 B5 CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO 4.600e-02 2.392e-09 ] [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = .5 | | Voltage I(typ) I -02 1.4052e-01 | [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = 1 | | Voltage 1.4820e-02 1.0001e-03 4.9376e-02 1.5900e+00 1.6224e-02 1.3245e 1.7826e-01 1.1479e-01 2.4870e-01 | [Series Mosfet] | CB3T3245 CB3T3245 CB3T3245 CB3T3245_IO_33_S Vds = 1 www.datasheetarchive.com/files/texas-instruments/simulation-models/scdm055.ibs |
Texas Instruments | 07/08/2011 | 130.03 Kb | IBS | scdm055.ibs |
| .700e-13 12 4A CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO 3.100e-02 2.244e-09 3.110e-13 13 4NOE ] [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = .5 | | Voltage I(typ) I -02 1.4052e-01 | [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = 1 | | Voltage 1.4820e-02 1.0001e-03 4.9376e-02 1.5900e+00 1.6224e-02 1.3244e 1.7826e-01 1.1479e-01 2.4870e-01 | [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = 1 www.datasheetarchive.com/download/75075936-917435ZC/scdm024.zip (sn74cb3t3125.ibs) |
Texas Instruments | 07/08/2011 | 26.53 Kb | ZIP | scdm024.zip |
| .700e-13 12 4A CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO 3.100e-02 2.244e-09 3.110e-13 13 4NOE ] [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = .5 | | Voltage I(typ) I -02 1.4052e-01 | [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = 1 | | Voltage 1.4820e-02 1.0001e-03 4.9376e-02 1.5900e+00 1.6224e-02 1.3244e 1.7826e-01 1.1479e-01 2.4870e-01 | [Series Mosfet] | CB3T3125 CB3T3125 CB3T3125 CB3T3125_IO_33_S Vds = 1 www.datasheetarchive.com/files/texas-instruments/simulation-models/scdm024.ibs |
Texas Instruments | 07/08/2011 | 127.45 Kb | IBS | scdm024.ibs |
| CB3T16212A CB3T16212A CB3T16212A CB3T16212A_IO 4.700e-02 3.110e-09 4.710e-13 38 GND GND 4 .300e-02 2.450e-09 2.930e-13 19 GND GND 5.100e-02 2.544e-09 3.110 CB3T16212A CB3T16212A CB3T16212A CB3T16212A_IO 5.000e-02 2.606e-09 3.110e-13 38 GND GND 5 .200e-02 2.933e-09 3.960e-13 47 4B1 CB3T16212A CB3T16212A CB3T16212A CB3T16212A_IO 7.500e-02 2.126e-09 3.110 ] [Series Mosfet] | CB3T16212A CB3T16212A CB3T16212A CB3T16212A_IO_33_S Vds = .5 | | Voltage I(typ) I www.datasheetarchive.com/download/26361656-917527ZC/scdm141.zip (sn74cb3t16212.ibs) |
Texas Instruments | 25/09/2011 | 27.76 Kb | ZIP | scdm141.zip |
| .440e-13 24 VCC POWER 3.700e-02 3.110e-09 4.310e-13 .000e-02 2.658e-09 4.020e-13 15 B8 CBTLV3861 CBTLV3861 CBTLV3861 CBTLV3861_IO 3.900e-02 2.343e-09 3.110 ] [Series Mosfet] | CBTLV3861 CBTLV3861 CBTLV3861 CBTLV3861_IO_33_S Vds = .5 | | Voltage I 9.9013e-02 4.2327e-02 2.5475e-01 | [Series Mosfet] | CBTLV3861 CBTLV3861 CBTLV3861 CBTLV3861_IO_33_S Vds = 1 www.datasheetarchive.com/download/42111808-917514ZC/scdm126.zip (sn74cbtlv3861.ibs) |
Texas Instruments | 06/08/2011 | 26.28 Kb | ZIP | scdm126.zip |
| 1B7 CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO 7.500e-02 2.126e-09 3.110e-13 C6 1B6 CB3T16211 CB3T16211 CB3T16211 CB3T16211 GND GND 5.100e-02 2.544e-09 3.110e-13 20 2A4 CB3T16211 CB3T16211 CB3T16211 CB3T16211 -13 37 2B4 CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO 5.000e-02 2.606e-09 3.110e-13 38 GND ] [Series Mosfet] | CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO_33_S Vds = .5 | | Voltage I www.datasheetarchive.com/download/33856577-917476ZC/scdm096.zip (sn74cb3t16211.ibs) |
Texas Instruments | 07/08/2011 | 28.71 Kb | ZIP | scdm096.zip |
| 1B7 CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO 7.500e-02 2.126e-09 3.110e-13 C6 1B6 CB3T16211 CB3T16211 CB3T16211 CB3T16211 GND GND 5.100e-02 2.544e-09 3.110e-13 20 2A4 CB3T16211 CB3T16211 CB3T16211 CB3T16211 -13 37 2B4 CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO 5.000e-02 2.606e-09 3.110e-13 38 GND ] [Series Mosfet] | CB3T16211 CB3T16211 CB3T16211 CB3T16211_IO_33_S Vds = .5 | | Voltage I www.datasheetarchive.com/files/texas-instruments/simulation-models/scdm096.ibs |
Texas Instruments | 07/08/2011 | 145.87 Kb | IBS | scdm096.ibs |