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VS-20CTH03SPBF Vishay Semiconductors DIODE ARRAY GP 300V 10A D2PAK visit Digikey Buy
FML-23S DK Sanken Electric Co Ltd DIODE ARRAY GP 300V 10A TO220F visit Digikey Buy
FMX-23S DK Sanken Electric Co Ltd DIODE ARRAY GP 300V 10A TO220F visit Digikey Buy
SBR20A300CT Diodes Incorporated Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
SBR10U300CTFP Diodes Incorporated Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN visit Digikey Buy
VS-20CTH03-1PBF Vishay Semiconductors DIODE ARRAY GP 300V 10A TO262-3 visit Digikey Buy

300V 10A diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: / Characteristic values Transistor / Transistor IC= 10A, V CC= 300V Einschaltverzögerungszeit (ind. Last) turn on , , RG= 56 , Tvj= 125°C IC= 10A, V CC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 56 , Tvj= 25°C VGE= ±15V, RG= 56 , Tvj= 125°C IC= 10A, V CC= 300V Fallzeit , , Anschlüsse - Chip lead resistance, terminals - chip TC= 25°C IC= 10A, V CC= 300V, V GE= 15V RG= 56 , Tvj= 125°C, L= 15nH IC= 10A, V CC= 300V, V GE= 15V RG= 56 , Tvj= 125°C, L= 15nH tP 10µsec, V GE 15V TVj125°C Eupec
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RG 56

Abstract: IC= 10A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 56, T vj= 25°C VGE= ±15V, RG= 56, T vj= 125°C IC= 10A, VCC= 300V Anstiegszeit (induktive Last , = 25°C VGE= ±15V, RG= 56, T vj= 125°C IC= 10A, VCC= 300V Fallzeit (induktive Last) fall time (inductive , resistance, terminals - chip T C= 25°C IC= 10A, VCC= 300V, VGE= 15V RG= 56, T vj= 125°C, L= 15nH IC= 10A, VCC , , T vj= 125°C IF= 10A, -diF/dt= 450A/µsec Sperrverzögerungsladung recoverred charge VR= 300V, VGE
Eupec
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SC-67

Abstract: LOW LOSS SUPER HIGH SPEED RECTIFIER RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack(P) 3 200V max 10A max T-pack(P) 3 300V max 10A max T-pack(P) 3 200V max 10A max T-pack(S) 3 300V max 10A max T-pack(S) 3 200V max 20A max T-pack(S) 3 200V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 300V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 200V max 10A max TO
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L500H

Abstract: to 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 23 A Tj = 125°C VCC = 300V IF = 10A L = 500H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.23 , 0 1000 1500 2000 dif/dt (A/µs) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A , (25°C-125°C) VGE = 0 VCE = 600V VGE = 0 VCE = 600V Tj = 125°C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 V(BR)CES/TJ Temp. Coefficient of
International Rectifier
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L500H I27308 GB10RF60K E78996 50/60H

RG 56

Abstract: igbt 300V 10A datasheet / Transistor typ. max. IC= 10A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time , 18 - ns - VGE= ±15V, RG= 56, Tvj= 125°C 25 - ns IC= 10A, VCC= 300V , , RG= 56, Tvj= 125°C IC= 10A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time , = 56, Tvj= 125°C IC= 10A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE , turn-on energy loss per pulse IC= 10A, VCC= 300V, VGE= 15V Abschaltverlustenergie pro Puls turn-off
Eupec
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RG 56 igbt 300V 10A datasheet
Abstract: 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 23 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 10A L = 500μH Diode VGE = 15V RG = 22Ω V FM , ) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 20 40 60 , VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A VCC = 300V VGE = 15V RG = 22Ω L = 500μH Tj = 25°C μJ ns pF 1 IC = 10A VCC = 300V 1 IC = 10A VCC = 300V International Rectifier
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1E-05 1E-04 1E-03 1E-02 1E-01

Diode 400V 20A

Abstract: power Diode 400V 20A RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack(P) 3 200V max 10A max T-pack(P) 3 300V max 10A max T-pack(P) 3 200V max 10A max T-pack(S) 3 300V max 10A max T-pack(S) 3 200V max 20A max T-pack(S) 3 200V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 300V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 200V max 10A max TO
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ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 Diode 400V 20A power Diode 400V 20A power Diode 200V 10A diode 300v Rectifier Diode 20A EIAJ SC67
Abstract: ) 1200 Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C Document , °C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 36 A Tj = 125°C VCC = 300V IF = 20A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.26 1.38 1.21 1.36 1.57 1.80 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 International Rectifier
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I27307 GB20RF60K
Abstract: . Recovery Current - - - A VCC = 300V IF = 10A L = 500μH V FM Diode Forward Voltage , ) 1200 Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 10 , 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 36 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 20A L = 200μH Diode VGE = 15V RG = 22Ω V FM , = 600V Tj = 125°C nA VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A International Rectifier
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transistor A 562

Abstract: a c te r is t ic v a lu e s T ran sisto r/T ran s is to r lc= 10A, Vcc= 300V E , ±15V, Rg= 56£2, Tv j= 125°C lc= 10A, Vcc= 300V tyP67 70 max- fd.on - - ns ns A , = 56£2, Tv j= 125°C lc= 10A, Vcc= 300V tr - 18 25 - ns ns Abschaltverzögerungszeit (ind , , Tv j= 125°C lc= 10A, Vcc= 300V td.off - 190 225 - ns ns Fallzeit (induktive Last , , Vcc= 300V, VGE= 15V Eon Rg= 56£2, T vj= 125°C, Ls= 15nH lc= 10A, Vcc= 300V, VGE= 15V Eoff Rg= 56£2, T
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transistor A 562
Abstract: - Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 0 www.vishay.com 10 Brake , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 30 A Tj = 125°C VCC = 300V IF = 15A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.22 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 International Rectifier
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I27306 GB15RF60K

igbt 300V 10A datasheet

Abstract: SMC7G10US60 on delay time VCC=300V, IC=10A - 10 tr Turn on rise time VGE=15V - 17 - , IF=10A Min Min Typ Max Irr Qrr Diode Reverse Recovery Charge 1.8 - Tc , Tc=100°C Recovery Current - Tc=100°C Diode Peak Reverse 2.8 Tc=25°C IF=10A VR , Conditions VFM Diode Forward Voltage IF=10A Min Min Typ Max VR=VRRM 1.2 1.5 - 1.1 , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12
Fairchild Semiconductor
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SMC7G10US60 MJ 800 21-PM-AA
Abstract: . Recovery Current - - - A VCC = 300V IF = 10A L = 500μH V FM Diode Forward Voltage , 800 1200 dif/dt (A/µs) Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = , 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 30 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 15A L = 200μH Diode VGE = 15V RG = 22Ω V FM , = 600V Tj = 125°C nA VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A International Rectifier
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SME6G10US60

Abstract: SME6G10US60 IGBT transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns tr Turn on rise , Vfm Diode Forward Voltage If=10A Tc =25°C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time If=10A, VR=200V di/dt= -20A/uS Tc =25°C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak , Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SME6G10US60 Preliminary COMPACT IGST MODULE Vcc = 300V le = 10A
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SME6G10US60 IGBT 17-PM-BA
Abstract: - pF td(on) Turn on delay time VCC=300V, IC=10A - 10 tr Turn on rise time , Characteristics Conditions VFM Diode Forward Voltage IF=10A Min Min Typ Max Irr Qrr Diode , =100°C Diode Peak Reverse 2.8 Tc=25°C IF=10A VR=200V di/dt= -20A/uS 1.9 Tc=25 °C Diode , Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V , MODULE 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20â"¦ Vge = 15V Esw Ic =20A 0.8 Fairchild Semiconductor
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igbt 300V 10A

Abstract: SGW10N60RUFD Cres Reverse transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - nS , 12 ~ 10 > m CD Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SGW10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , If Diode Continuous Forward Current @ Tc = 100°C 12 A 'fm Diode Maximum Forward Current 92 A Pd , (sat) Collector to Emitter lc=10A, VGE= 15V - 1.95 2.7 V saturation voltage lc=16A, VGE= 15V - 2.4 -
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igbt 300V 10A

ultrafast diode 10a 300v

Abstract: F20UP30DN FFB20UP30DN 20A, 300V, Ultrafast Dual Diode . 2006 FFB20UP30DN Features · Ultrafast , : VRRM = 300 V · Avalanche Energy Rated · RoHS Compliant tm 20A, 300V, Ultrafast Dual Diode The , Parameter IF = 10A IF = 10A VR = 300V VR = 300V IF =0.5A, Irr=1A, VCC = 30V IF =1A, di/dt = 100A/µs, VCC = , FFB20UP30DN Rev. A FFB20UP30DN 20A, 300V, Ultrafast Dual Diode Typical Performance Characteristics , , 300V, Ultrafast Dual Diode TO-263AB/D2-PAK Dimensions in Millimeters © Ultrafast Recovery Power
Fairchild Semiconductor
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ultrafast diode 10a 300v F20UP30DN power Diode 300V 10A diode 300v 20a DUAL DI

igbt 300V 10A datasheet

Abstract: SMC6G10US60 capacitance Cres Reverse transfer capacitance td(on) Turn on delay time VCC=300V, IC=10A - , Inverter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF=10A Trr Irr Diode Reverse Recovery Time IF=10A VR=200V di/dt= -20A/uS Diode Peak Reverse , Diode @ Converter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF=10A , 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V] Capacitance [pF] 14 600
Fairchild Semiconductor
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SMC6G10US60 diode code GW 17

mnrh

Abstract: SMC6G10US60 , Vge=15V @Tc=100 °C 10 - - uS Qg Total Gate Charge Vcc=300V Vge=15V lc=10A - 44 66 nC Qge , Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Vcc = 300V le = 10A , Saturation Voltage @ VCE(sat) = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V , @Tc = 25°C 36 W 'f Diode Continuous Forward Current @ Tc = 25°G 10 A 'fm Diode Maximum Forward , Emitter saturation voltage lc=10A, VG E=15V@Tc=25 °C - 2.0 2.7 V lc=10A, VG E=15V@Tc= 100 °C - 2.1 -
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mnrh 20Q100 OA 50 diode

SGP10N60RUFD

Abstract: 35 khz ballast 18w Cres Reverse transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns , 12 ~ 10 > m CD Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SGP10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT , If Diode Continuous Forward Current @ Tn = 100°C 12 A 'fm Diode Maximum Forward Current 92 A Pd
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35 khz ballast 18w
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