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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments

300V 10A diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: / Characteristic values Transistor / Transistor IC= 10A, V CC= 300V Einschaltverzögerungszeit (ind. Last) turn on , , RG= 56 , Tvj= 125°C IC= 10A, V CC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 56 , Tvj= 25°C VGE= ±15V, RG= 56 , Tvj= 125°C IC= 10A, V CC= 300V Fallzeit , , Anschlüsse - Chip lead resistance, terminals - chip TC= 25°C IC= 10A, V CC= 300V, V GE= 15V RG= 56 , Tvj= 125°C, L= 15nH IC= 10A, V CC= 300V, V GE= 15V RG= 56 , Tvj= 125°C, L= 15nH tP 10µsec, V GE 15V TVj125°C Eupec
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RG 56

Abstract: IC= 10A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 56, T vj= 25°C VGE= ±15V, RG= 56, T vj= 125°C IC= 10A, VCC= 300V Anstiegszeit (induktive Last , = 25°C VGE= ±15V, RG= 56, T vj= 125°C IC= 10A, VCC= 300V Fallzeit (induktive Last) fall time (inductive , resistance, terminals - chip T C= 25°C IC= 10A, VCC= 300V, VGE= 15V RG= 56, T vj= 125°C, L= 15nH IC= 10A, VCC , , T vj= 125°C IF= 10A, -diF/dt= 450A/µsec Sperrverzögerungsladung recoverred charge VR= 300V, VGE
Eupec
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SC-67

Abstract: LOW LOSS SUPER HIGH SPEED RECTIFIER RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack(P) 3 200V max 10A max T-pack(P) 3 300V max 10A max T-pack(P) 3 200V max 10A max T-pack(S) 3 300V max 10A max T-pack(S) 3 200V max 20A max T-pack(S) 3 200V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 300V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 200V max 10A max TO
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L500H

Abstract: to 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 23 A Tj = 125°C VCC = 300V IF = 10A L = 500H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.23 , 0 1000 1500 2000 dif/dt (A/µs) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A , (25°C-125°C) VGE = 0 VCE = 600V VGE = 0 VCE = 600V Tj = 125°C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 V(BR)CES/TJ Temp. Coefficient of
International Rectifier
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L500H I27308 GB10RF60K E78996 50/60H

RG 56

Abstract: igbt 300V 10A datasheet / Transistor typ. max. IC= 10A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time , 18 - ns - VGE= ±15V, RG= 56, Tvj= 125°C 25 - ns IC= 10A, VCC= 300V , , RG= 56, Tvj= 125°C IC= 10A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time , = 56, Tvj= 125°C IC= 10A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE , turn-on energy loss per pulse IC= 10A, VCC= 300V, VGE= 15V Abschaltverlustenergie pro Puls turn-off
Eupec
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RG 56 igbt 300V 10A datasheet
Abstract: 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 23 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 10A L = 500μH Diode VGE = 15V RG = 22Ω V FM , ) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 20 40 60 , VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A VCC = 300V VGE = 15V RG = 22Ω L = 500μH Tj = 25°C μJ ns pF 1 IC = 10A VCC = 300V 1 IC = 10A VCC = 300V International Rectifier
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1E-05 1E-04 1E-03 1E-02 1E-01

Diode 400V 20A

Abstract: power Diode 400V 20A RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack(P) 3 200V max 10A max T-pack(P) 3 300V max 10A max T-pack(P) 3 200V max 10A max T-pack(S) 3 300V max 10A max T-pack(S) 3 200V max 20A max T-pack(S) 3 200V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 300V max 5A max TO-220F15(FE)/SC-67 (EIAJ) 200V max 10A max TO
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ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 Diode 400V 20A power Diode 400V 20A power Diode 200V 10A diode 300v Rectifier Diode 20A EIAJ SC67
Abstract: ) 1200 Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C Document , °C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 36 A Tj = 125°C VCC = 300V IF = 20A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.26 1.38 1.21 1.36 1.57 1.80 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 International Rectifier
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I27307 GB20RF60K
Abstract: . Recovery Current - - - A VCC = 300V IF = 10A L = 500μH V FM Diode Forward Voltage , ) 1200 Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 10 , 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 36 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 20A L = 200μH Diode VGE = 15V RG = 22Ω V FM , = 600V Tj = 125°C nA VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A International Rectifier
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transistor A 562

Abstract: a c te r is t ic v a lu e s T ran sisto r/T ran s is to r lc= 10A, Vcc= 300V E , ±15V, Rg= 56£2, Tv j= 125°C lc= 10A, Vcc= 300V tyP67 70 max- fd.on - - ns ns A , = 56£2, Tv j= 125°C lc= 10A, Vcc= 300V tr - 18 25 - ns ns Abschaltverzögerungszeit (ind , , Tv j= 125°C lc= 10A, Vcc= 300V td.off - 190 225 - ns ns Fallzeit (induktive Last , , Vcc= 300V, VGE= 15V Eon Rg= 56£2, T vj= 125°C, Ls= 15nH lc= 10A, Vcc= 300V, VGE= 15V Eoff Rg= 56£2, T
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transistor A 562
Abstract: - Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = 125°C 0 www.vishay.com 10 Brake , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 30 A Tj = 125°C VCC = 300V IF = 15A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.22 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 International Rectifier
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I27306 GB15RF60K

igbt 300V 10A datasheet

Abstract: SMC7G10US60 on delay time VCC=300V, IC=10A - 10 tr Turn on rise time VGE=15V - 17 - , IF=10A Min Min Typ Max Irr Qrr Diode Reverse Recovery Charge 1.8 - Tc , Tc=100°C Recovery Current - Tc=100°C Diode Peak Reverse 2.8 Tc=25°C IF=10A VR , Conditions VFM Diode Forward Voltage IF=10A Min Min Typ Max VR=VRRM 1.2 1.5 - 1.1 , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12
Fairchild Semiconductor
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SMC7G10US60 MJ 800 21-PM-AA
Abstract: . Recovery Current - - - A VCC = 300V IF = 10A L = 500μH V FM Diode Forward Voltage , 800 1200 dif/dt (A/µs) Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 10A; TJ = , 300V VP = 600V RG = 22Ω Inverter Irr Diode Peak Rev. Recovery Current - 30 - A VGE = 15V to 0 Tj = 125°C VCC = 300V IF = 15A L = 200μH Diode VGE = 15V RG = 22Ω V FM , = 600V Tj = 125°C nA VGE = ±20V IC = 10A nC VCC = 300V VGE = 15V μJ IC = 10A International Rectifier
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SME6G10US60

Abstract: SME6G10US60 IGBT transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns tr Turn on rise , Vfm Diode Forward Voltage If=10A Tc =25°C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time If=10A, VR=200V di/dt= -20A/uS Tc =25°C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak , Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SME6G10US60 Preliminary COMPACT IGST MODULE Vcc = 300V le = 10A
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SME6G10US60 IGBT 17-PM-BA
Abstract: - pF td(on) Turn on delay time VCC=300V, IC=10A - 10 tr Turn on rise time , Characteristics Conditions VFM Diode Forward Voltage IF=10A Min Min Typ Max Irr Qrr Diode , =100°C Diode Peak Reverse 2.8 Tc=25°C IF=10A VR=200V di/dt= -20A/uS 1.9 Tc=25 °C Diode , Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V , MODULE 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20â"¦ Vge = 15V Esw Ic =20A 0.8 Fairchild Semiconductor
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igbt 300V 10A

Abstract: SGW10N60RUFD Cres Reverse transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - nS , 12 ~ 10 > m CD Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SGW10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , If Diode Continuous Forward Current @ Tc = 100°C 12 A 'fm Diode Maximum Forward Current 92 A Pd , (sat) Collector to Emitter lc=10A, VGE= 15V - 1.95 2.7 V saturation voltage lc=16A, VGE= 15V - 2.4 -
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igbt 300V 10A

ultrafast diode 10a 300v

Abstract: F20UP30DN FFB20UP30DN 20A, 300V, Ultrafast Dual Diode . 2006 FFB20UP30DN Features · Ultrafast , : VRRM = 300 V · Avalanche Energy Rated · RoHS Compliant tm 20A, 300V, Ultrafast Dual Diode The , Parameter IF = 10A IF = 10A VR = 300V VR = 300V IF =0.5A, Irr=1A, VCC = 30V IF =1A, di/dt = 100A/µs, VCC = , FFB20UP30DN Rev. A FFB20UP30DN 20A, 300V, Ultrafast Dual Diode Typical Performance Characteristics , , 300V, Ultrafast Dual Diode TO-263AB/D2-PAK Dimensions in Millimeters © Ultrafast Recovery Power
Fairchild Semiconductor
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ultrafast diode 10a 300v F20UP30DN power Diode 300V 10A diode 300v 20a DUAL DI

igbt 300V 10A datasheet

Abstract: SMC6G10US60 capacitance Cres Reverse transfer capacitance td(on) Turn on delay time VCC=300V, IC=10A - , Inverter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF=10A Trr Irr Diode Reverse Recovery Time IF=10A VR=200V di/dt= -20A/uS Diode Peak Reverse , Diode @ Converter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF=10A , 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V] Capacitance [pF] 14 600
Fairchild Semiconductor
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SMC6G10US60 diode code GW 17

mnrh

Abstract: SMC6G10US60 , Vge=15V @Tc=100 °C 10 - - uS Qg Total Gate Charge Vcc=300V Vge=15V lc=10A - 44 66 nC Qge , Vce [V] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Vcc = 300V le = 10A , Saturation Voltage @ VCE(sat) = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V , @Tc = 25°C 36 W 'f Diode Continuous Forward Current @ Tc = 25°G 10 A 'fm Diode Maximum Forward , Emitter saturation voltage lc=10A, VG E=15V@Tc=25 °C - 2.0 2.7 V lc=10A, VG E=15V@Tc= 100 °C - 2.1 -
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mnrh 20Q100 OA 50 diode

SGP10N60RUFD

Abstract: 35 khz ballast 18w Cres Reverse transfer capacitance - 22 - pF td(on) Turn on delay time Vcc = 300V , lc = 10A - 10 - ns , 12 ~ 10 > m CD Vcc = 300V le = 10A , Copyrighted By Its Respective Manufacturer SGP10N60RUFD CO-PAK IGBT Vcc = 300V le = 10A , Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT , If Diode Continuous Forward Current @ Tn = 100°C 12 A 'fm Diode Maximum Forward Current 92 A Pd
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35 khz ballast 18w
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