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1N3006B Microsemi Corporation Zener Diode, 105V V(Z), 5%, 10W, Silicon, Unidirectional, DO-203AA, HERMETIC SEALED, GLASS, DO-4, 1 PIN visit Digikey Buy
DSEP30-06BR IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, PLASTIC, ISOPLUS247, 2 PIN visit Digikey Buy
DSEP30-06B IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247AD, ISOPLUS247, 2 PIN visit Digikey Buy
DSEC30-06B IXYS Corporation Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
09P30-06B12N Grayhill Inc SWITCH ROTARY 12POS 250MA 115V visit Digikey Buy
C3006BR bulgin Safety Door Switch, SPST, On-off, Momentary, Quick Connect Terminal, Panel Mount, ROHS COMPLIANT visit Digikey Buy

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Part : 44A30-06B12N Supplier : Grayhill Manufacturer : Avnet Stock : - Best Price : $61.4454 Price Each : $92.7640
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Part : 09P30-06B12N Supplier : Grayhill Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : PPMA3006B Supplier : Panduit Manufacturer : Sager Stock : - Best Price : $2.18 Price Each : $2.74
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3006B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A , : K/W i DSEP 30-06BR 1 1 2 3 DSEP 30-06B ZthJC 0.1 Rthi (K/W) ti (s , rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-3 DSEP 30-06BR DSEP 30-06B 100 300 A nC TVJ = 150°C IF Qr IF = 60 A 10 IRM IF = 60 A IXYS
Original

LA7835

Abstract: LA7685 3021B 3 0 67 3 0 67 3006B 3021B 3006B 30 0 6 B 3 0 1 7B 3 0 07 A 3006B 30 0 6 B 3006B 3 0 75 3024A 3 0 75 3075 31 07 3 1 07 3 1 07 31 07 3021B 3021B 3059 3 0 59 3021B 3021B 30 59 30 59 3017B 3006B 3017B 3006B 3021B 30 17 B 3006B 3 0 59 3059 3043A 3003A 3 0 1 7B 3061 30 1 7 B 3021B 3017B 3021B 3 0 67 3042C
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OCR Scan
LA7835 LA7685 la7630 vertical LA7833 LA7655 LA7856 3025B
Abstract: DSEC 30-06B HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 600 V trr = 35 ns with common cathode and soft recovery VRSM VRRM V 600 A C A TO-247 AD V 600 Type A C A DSEC 30-06B C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol , diode unless otherwise specified. 1-2 DSEC 30-06B 50 300 A TVJ = 150°C IF IF = 7.5 , (s) 0.908 0.35 0.342 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEC 30-06B IXYS
Original
Abstract: DSEC 30-06B HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 600 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V 600 A C A TO-247 AD V 600 Type A C A DSEC 30-06B C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol , 417 Data according to IEC 60747 and per diode unless otherwise specified. 1-2 DSEC 30-06B , 0.001 0.00001 DSEC 30-06B 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows IXYS
Original

la1830

Abstract: LA1851n equivalent 3036B 3179 3006B 3006B 3021B 3006B - LA1192V4 LA1231N LA1235 LA1245 LA1260 SSO P DIP DIP DIP , 3006B 3017B 3003A 3059 3067 3067 LA1806 LA1810 AM/FM IF and M P X 13 DIP 24S 3067
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OCR Scan
LA1503 LA1805 LA1815 LA1816 LA1851N la1830 LA1851n equivalent LA1861 LA180 LA1862M LA1178M LA1185 LA1186N LA1188A LA1267

FL57STH76-2804A

Abstract: FL57STH56-2804A 0.21 41 FL57STH41-2006A FL57STH41-2006B 2.8 2 1.4 1.4 FL57STH41-3006A FL57STH41-3006B 1.9 3 0.63 , -3006A FL57STH51-3006B 2.2 3 0.74 0.9 FL57STH51-2804A FL57STH51-2804B 2.3 2.8 0.83 2.2 10.1 4 FL57STH56 , FL57STH56-3006A FL57STH56-3006B 2.3 3 0.75 1.1 FL57STH56-2804A FL57STH56-2804B 2.5 2.8 0.9 2.5 12.6 4 , 3.6 FL57STH76-3006A FL57STH76-3006B 3 3 1 1.6 FL57STH76-2804A FL57STH76-2804B 3.2 2.8 1.13
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OCR Scan
FL57STH41-1006A FL57STH41-2804A FL57STH51-1006A FL57STH56-1006A FL57STH56-3006B FL57STH76-1006A FL57STH76-1006B FL57STH76-2006A 500VDC 500VAC FL57STH41-1006B FL57STH41-3006B

3006B

Abstract: DSEC 30-06B HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 600 V trr = 35 ns with common cathode and soft recovery VRSM VRRM V 600 A C A TO-247 AD V 600 Type A C A DSEC 30-06B C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol , according to IEC 60747 and per diode unless otherwise specified. 1-2 DSEC 30-06B 50 300 A TVJ , DSEC 30-06B 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1
IXYS
Original

la2780n

Abstract: RDS decoder 14 36S 36S 64S 64E 9 8 9 20S 9 9 14 64 E 3017B 3111 3036B 3020A 3006B 3006B 30:»A 3C66 3010A 3C67 3112 3C67 3112 3C67 3112 3006B 3067 3025B 3003A 3170 3129 3071 3159 30I7B 3032B 30178 3021B 3017B 3017B
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OCR Scan
la2780n RDS decoder LV1000 dolby circuit NE LA2746 LV1000N LC7883K LC78835 LC7886 IC8600K LC8901 LC78815

30-06BR

Abstract: DSEC60-06A DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR ISOPLUS 247TM TO-247 AD Version A , to case 2-3 DSEP 30-06BR DSEP 30-06B 60 A 1000 50 IF TVJ= 100°C VR = 300V A , versus -diF/dt 2 DSEP 30-06BR 0.00 600 A/ms 1000 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation .B: 1 i DSEP 30-06B K/W 1 2
IXYS
Original
DSEC60-06A 3006A 30-06A DSEP30-06A

DSEP30-06A

Abstract: DSEC60-06A DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 ns with soft recovery VRSM VRRM V 600 600 600 A C V 600 600 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD ISOPLUS 247TM Version A , 30-06BR DSEP 30-06B 100 300 A nC TVJ = 150°C IF A VR = 300 V 250 80 12 TVJ , : K/W i DSEP 30-06BR 1 1 2 3 DSEP 30-06B ZthJC 0.1 Rthi (K/W) ti (s
IXYS
Original
DSEC6006A IXYS DSEP30-06A DSEP3006A DSEC60
Abstract: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V , 600 Type DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD Version BR C C A A C , junction to case © 2000 IXYS All rights reserved DSEP 30-06BR DSEP 30-06B 60 A 1000 50 , Fig. 5 Recovery time trr versus -diF/dt 2 DSEP 30-06BR 0 200 400 0.00 600 A/ s 1000 , calculation .B: 1 i DSEP 30-06B K/W 1 2 3 ZthJC 0.1 Rthi (K/W) ti (s) 0.465 IXYS
Original

STK73012

Abstract: 3036B DIP DIP 3006B 3045B 3036B 3036B 3045B 3073A 3059 3045B 3059 3155 3067 3155 3059 3073A 3061 3073A , FP SQ FP 24S 8 8 14 14 16 20 16 20 42S 48A 24S 24 48 48 64 3112 3001B 3001B 3003A 3034A 3006B 3036B 3006B 3036B 3025B 3052A 3084 3155 3163 3163 3102 5 5 5 5 5 5 5 5 5 5 5 5 5 5.5 5 5 Maximum
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OCR Scan
STK73012 64256 stk73907 circuit LC7441E LC7442V LC7441 LC7470 LC7471 LC7442E

ixys dsep

Abstract: 30-06A â¡IXYS DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDâ"¢ Epitaxial Diode with soft recovery Preliminary Data â FAV Vrrm t irr 30 A 600 V 30/35 ns V RSM V RRM Type V V 600 600 DSEP 30-06A 600 600 DSEP 30-06B 600 600 DSEP 30-06BR TO-247 AD Version A ISOPLUS 247â"¢ Version BR Symbol Test Conditions Maximum Ratings 'frms 70 A 'favm rect., d = 0.5; Tc (Vers. A) = 135°C 30 A Tc (Vers. B) = , rights reserved 2 -3 â¡IXYS DSEP 30-06B Fig. 1 Forward current I versus V 2.0 1.5 1.0 0.5 0.0
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OCR Scan
ixys dsep 1500C

dsep 2x91-03a

Abstract: DSEC HiPerFREDTM Diodes lF A V = 8 - 2x120 A Type V RRM '1f a v @ T 1c 3= JKl T K 3 DSEE. DSEP. DSEC. DSEP 2x. DSEC d=0.5 N ew DSEP B-02A DSEP 6-03A DSEP 15-03A DSEP 29-03A DSEP 30-03A DSEP 30-04A DSEP 60-04A DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP DSEP 6-06A S 8-06A 15-06A 15-06B 29-06A 29-06AS 29-06B 30-06A 30-06B 30-06B R 30-06C R 60-06A 60-06A T , 16-04 AS DSEC 30-04A DSEC 60-04AC DSEC 16-06 A DSEC 16-06AC DSEC 29-06AC DSEC 30-06A DSEC 30-06B
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OCR Scan
dsep 2x91-03a DSEC 240-04A DSEP 2X31-12A 2x61-06A dsep 12-12a 30-12AR 60-12AR 55-24N 29-02AS 59-06B

calculation of IGBT snubber

Abstract: ISOPLUS247 V-diodes suitable for PFC and similar applications Type DSEP 8-06A DSEP 9-06CR DSEP 30-06B Competition , 30-06B finally is again a single chip device with improved switching speed (suffix "B"). A competitive , DSEP 9-06CR DSEP 30-06B Competition VF [V] IRM [A] IF=10 A TJ=150°C Type IF=10 A, VR , value of 175°C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size (DSEP 30-06B
IXYS
Original
calculation of IGBT snubber ISOPLUS247 DSEP dt300
Abstract: DSEC 30-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 600 V = 25 ns trr with common cathode and soft recovery Preliminary data VRSM VRRM V V 600 600 TO-247 AD Type DSEC 30-06B A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive; IAS = 1 A; L = 100 µH L = IXYS
Original

LM534

Abstract: LA4508 AUDIO CIRCUIT 16 16 16 22S 16 16 16 16 30S 28S 30S 22S 30S 3017B 3086A 3006B 3020A 3020A 3006B 3020A 3020A 3059 3006B 3020A 3Q35A 3006B 3061 3063 3061 3059 3061 Description Recommended supply voltage Vcc (V , 10 24S 24S 24S 20S 8 8 14S 16 20S 20S 3017B 3003A 3043A 3067 3067 3067 3021B 3016B 3016B 3111 3006B , 44MA 48 3082 3082 3113 3113 3086A 3086A 3086A 3086A 3086A 3111 3006B 3035A 3036B 3112 - Recommended
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OCR Scan
LA3335 LA3365 LA3805 LM534 LA4508 AUDIO CIRCUIT LA4138 LA4620 LA4505 LA3335M LA3361 LA3370 LA3373

12v dc motor tape recorder

Abstract: TAPE RECORDER bias Voltage Vhy 100 200 mV Hysteresis Width Continued on next page. Case Outline (unit:mm) w 3006B-D16IC , SANYO SEMICONDUCTOR CORP 12E D g 7n7D7h 00D3341 LB1609 3006B M onolithic Digital IC Compact DC Motor Driver © 2599A Use . Control of rotational speed of tachometer generator-provided compact DC motor used in cassette tape recorder, tape recorder, FDD, etc. Features . Applicable to various motors from small motors to large motors by selecting an external PNP transistor . The motor
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OCR Scan
12v dc motor tape recorder TAPE RECORDER bias DIP16 9047TA

2SB507 equivalent

Abstract: dc motor tape recorder next page. Case Outline 3006B-D16IC _._9017TA,TS No.2599-1/3 394 Printed from www , SANYO SEMICONDUCTOR CORP D g ?clci7ü7b 00D3341 P LB1609 fliP â'¢ 3006b Monolithic Digital IC Compact DC Motor Driver ©2599A Use . Control of rotational speed of tachometer generator-provided compact DC motor used in cassette tape recorder, tape recorder, FDD, etc. Features . Applicable to various motors from small motors to large motors by selecting an external PNP transistor . The motor
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OCR Scan
2SB507 2SB507 equivalent dc motor tape recorder 21ic 12v DC motor forward-reverse OD033M2 0D03343

IXAN0060

Abstract: series connection of mosfet DSEP 9-06CR DSEP 30-06B Competition VRRM [V] IFAV [A] Total chip size 600 600 600 600 , "R" stands for the ISOPLUS247TM package. DSEP 30-06B finally is again a single chip device with , dynamic parameters of the tested diodes DSEP 8-06A DSEP 9-06CR DSEP 30-06B Competition VF [V , °C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size (DSEP 30-06B) requires lowest
IXYS
Original
IXAN0060 series connection of mosfet

BTA 18 800

Abstract: BTA 50 800 16 16 16 22S 16 16 16 16 30S 28S 30S 22S 30S 3017B 3086A 3006B 3020A 3020A 3006B 3020A 3020A 3059 3006B 3020A 3Q35A 3006B 3061 3063 3061 3059 3061 Description Recommended supply voltage Vcc (V , 10 24S 24S 24S 20S 8 8 14S 16 20S 20S 3017B 3003A 3043A 3067 3067 3067 3021B 3016B 3016B 3111 3006B , 44MA 48 3082 3082 3113 3113 3086A 3086A 3086A 3086A 3086A 3111 3006B 3035A 3036B 3112 - Recommended
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OCR Scan
BTA 18 800 BTA 50 800 BTB 700 BTA41B BTA 600
Showing first 20 results.