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Part Manufacturer Description PDF & SAMPLES
TAS3004PFB Texas Instruments Digital Audio Processor with Codec 48-TQFP 0 to 70
SN74GTL3004DCKR Texas Instruments Selectable GTL Voltage Reference 6-SC70 -40 to 85
SN74GTL3004DCKRG4 Texas Instruments Selectable GTL Voltage Reference 6-SC70 -40 to 85
TPA3004D2PHPR Texas Instruments 12-W StereoClass-D Audio Power Amplifier with Volume Control (TPA3004) 48-HTQFP -40 to 85
TPA3004D2PHPG4 Texas Instruments 12-W StereoClass-D Audio Power Amplifier with Volume Control (TPA3004) 48-HTQFP -40 to 85
TPA3004D2PHP Texas Instruments 12-W StereoClass-D Audio Power Amplifier with Volume Control (TPA3004) 48-HTQFP -40 to 85

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3004 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: coil @ nominal coil voltage 100Hz square wave Diode suppression Relay Specifications Insulation , (1.9) 0.142 (3.6) MAX 0.313 (7.95) 0.015 (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 3-0.04 (3-1.02) 0.071 (1.8) 0.051 (1.3) 1.42 MAX (3.6) 3-0.04 (3-1.02) 0.184 (4.67 , 0.313 (7.95) 0.015 (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 0.039 +0.012 -0.012 (1.0) 1 2 , (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 0.213 (5.4) 0.059 (1.5) 3-0.04 (3-1.02) 2R-54J -
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071 0039 DIODE 071 0039 3004 diode 3004 2R-54A 2R-54G 2R-14A 2R-14G 2R-14J 2000H
Abstract: Contacts / Shield to coil @ nominal coil voltage 100Hz square wave Diode suppression Relay , ) -0.012 0.5 +0.012 (12.7) 0.015 (0.38) -0.004 3-0.04 +0.004 (3-1.02) 0.065 (1.65) 0.063 , 0.39 (9.9) 3-0.04 (3-1.02) 1E-54A/1E-14A/1E-24A 0.406 (10.3) 4-R0.008 (4 , (1.3) 0.335 (8.5) 3-0.04 (3-1.02) 0.184 (4.67) MAX MAX 0.39 (9.9) 0.015 (0.38) -0.004 3-0.04 +0.004 (3-1.02) MAX 0.089 (2.25) 1 3 5 7 0.35 +0.012 -0.012 (8.9 -
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SANYU 1E-14J 1E-54G/1E-14G/1E-24G 1E-54J/1E-14J/1E-24J
Abstract: Microchip Technology Inc. DS40160A/3_004-page 1 Sensor Interface THE ADC PARTS LIST Capacitors , Resistors: D1 ­ D4 ­ Zener diode 4.7 Volts (1N4734A) It is needed to measure voltages higher than 5.0 Volts. If the voltage will not exceed 5.0 Volts it is better to remove this diode. ­ 1.0 MOhm ­ 1.0 , and the capacitor difference. DS40160A/3_004-page 2 t = -T ln(1 - U/E) t = -RC ln(U/E , .50 DS40160A/3_004-page 3 Sensor Interface APPENDIX B: SOURCE CODE ;ADC ;Author: Kirill Yelizarov Microchip Technology
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PIC12C508 12C508 P12C508 pic12c508 source digital counter sensor MPASM code macro DS40160A/3
Abstract: ISO-9001 CERTIFIED BY DSCC H-BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 3004 4707 Dey , Avalanche Rated Devices 55 Volt, 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3004 , for use in today's sophisticated servo motor and disk drive systems. The MSK 3004 is a replacement MS Kennedy
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MPM3004 3004 IC 3004 transistor 3004 motor 3 AMP STEPPER DRIVE IC 4707 N Channel MOSFETs
Abstract: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3004 4707 Dey Road Liverpool, N.Y. 13088 , , 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3004 uses M.S.Kennedy's proven power , servo motor and disk drive systems. The MSK 3004 is a replacement for the MPM3004 with only minor MS Kennedy
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H710 MSK3004
Abstract: M.S.KENNEDY CORP. FEATURES: H-BRIDGE MOSFET POWER MODULE 3004 (315) 701-6751 4707 Dey , , 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3004 uses M.S.Kennedy's proven power , servo motor and disk drive systems. The MSK 3004 is a replacement for the MPM3004 with only minor MS Kennedy
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Abstract: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3004 4707 , Conductivity Avalanche Rated Devices 55 Volt, 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 , . The MSK 3004 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3004 is a MS Kennedy
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P channel MOSFET 10A schematic P channel MOSFET 10A IC 3004 mosfet p-channel 10A
Abstract: HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEATURES These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low , HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C , 's website: http://www.microsemi.com DO-4 PIN DIODE APPLICATIONS/BENEFITS MRI Applications. High , 1.5 1.5 1.5 TSTG TOP RJC °C °C °C/W ELECTRICAL CHARACTERISTICS Parameter Diode Microsemi
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HUM3002 HUM3003 HUM3004 diode mri power high power pin diode HUM3002/3003/3004
Abstract: Coefficient (mV/°C) Diode Capacitance (pF) Vf/T CT 1.30 1.48 Thermal Resistance (°C/W) Peak Emission , alloy. SMA Flange Mount Transmitter FOXO/TMF1/3004 Receiver FOXO/RMF1/3005 64 , /3004 Receiver FOXO/RMP1/3005 SMA Bulkhead Mount Transmitter FOXO/TMB1/3004 Receiver FOXO/RMB1/3005 , /TTP1/3004 Receiver FOXO/RTP1/3005 Ordering Information F O X O/ Generic Range / 3004 - Oxley
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FOXO/TMF1/3004 FOXO/TMP1/3004 FOXO/TMB1/3004 FOXO/TTP1/3004
Abstract: 1.90 If = 30 mA If = 30 mA < o < II Fig. 1 Fig. 1 2 2 Temperature coefficient (mV/"C) Diode , resistant nickel silver alloy. SMA FLANGE MOUNT T ransmitter FOXO/TMF1 /3004 Receiver FOXO/RMF1/3005 , (0.236") dia. - 3 mm (0.118") dia. o o SMA PCB MOUNT T ransmitter FOXO/TMP1/3004 Receiver FOXO , /TMB1/3004 Receiver FOXO/RMB1/3005 n i / 1 r i / U K ! FIBRE OPTIC TRANSMITTER AND RECEIVER MODULES 7.5 mm (0.295") O 9.5 mm (0.374") A/F Hex ST BULKHEAD/PCB MOUNT Transmitter FOXO/TTP1/3004 -
OCR Scan
ct pr 3004 MIL-Q-9858
Abstract: Range â'¢ Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristicsï'  ï'  ï , . S12-3004-Rev. C, 10-Dec-12 1 Document Number: 72309 THIS DOCUMENT IS SUBJECT TO CHANGE , S Diode Forward Voltage VSD IS = 4.3 A, VGS = 0 V 0.84 0.72 V 49 65 VDS = , '£ 300 μs, duty cycle ï'£ 2 %. b. Guaranteed by design, not subject to production testing. S12-3004 , measured data. S12-3004-Rev. C, 10-Dec-12 3 Document Number: 72309 THIS DOCUMENT IS SUBJECT TO Vishay Siliconix
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7460DP S12-3004-R 2011/65/EU 2002/95/EC JS709A
Abstract: Diode suppression 9E-50J/9E-10J 0.15 (3.81) MAX 0.079 (2.0) 0.015 (0.38) +0.004 0.1 , +0.012 0.035 -0.012 (0.9) 0.021 (0.53) 0.142 (3.6) +0.012 0.035 -0.012 (0.9) 3-0.04 -0.004 (3-1.02) 9E-54J/9E-14J 1 2 3 4 1 2 3 4 8 7 6 5 3-0.04 (3-1.02 -
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375 07
Abstract: Diode suppression Contact Ratings Switching Voltage Switching Current Carry Current Contact , 5 0.015 (0.38) -0.004 0.059 +0.004 (1.51) 3-0.04 +0.004 -0.004 (3-1.016) 4-R0.008 (4 , MAX (9.7) 0.085 (2.15) 0.413 (10.5) 3-0.04 (3-1.016) 0.085 (2.15) 0.244 (6.2 -
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1D-16A 1060hPa
Abstract: time y Diode capacitance Thermal resistance junction to ambient Rev. A2, 24-Jun-98 VR=4V, f=1MHz Type UG3001­3003 UG3004 UG3005 UG3001­3004 UG3005 UG3001­3004 UG3005 Symbol VF VF VF IR , Ambient Temperature ( °C ) 15430 IFSM ­ Peak Forward Surge Current ( A ) 3.0 C D ­ Diode , specified) 15433 10 100 VR ­ Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs Vishay Intertechnology
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UG3002 UG3003 88/540/EEC 91/690/EEC D-74025
Abstract: =25°C TA=100°C IF=1A, IR=0.5A, Irr=0.25A Reverse recovery time y Diode capacitance Thermal , ­3007 UF3001­3004 UF3005­3007 UF3001­3004 UF3005­3007 Symbol VF VF VF IR IR trr trr CD CD RthJA , Temperature ( °C ) 15470 IFSM ­ Peak Forward Surge Current ( A ) 4 C D ­ Diode Capacitance ( pF , 15473 10 100 VR ­ Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Vishay Intertechnology
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UF3007 UF3002 UF3003 UF3004 UF3006 uf3003 diode Able
Abstract: orking peak reverse voltage =DC Blocking voltage Test C onditions Type UG3001 UG3002 UG3003 UG 3004 , Forward voltage II LL Test C onditions < C O Type U G 3 0 0 1 -3 0 0 3 UG 3004 UG3005 Sym bol , A R everse current R everse recovery tim e Diode capacitance Therm al resistance junction to am , Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4 ) Rev. A2 -
OCR Scan
UG3001-UG3005
Abstract: www.fairchildsemi.com Application Note AN-3004 Applications of Zero Voltage Crossing Optically , family consists of a liquid phase EPI, infrared, light emitting diode which optically triggers a silicon , . Schematic of Zero Crossing Optically Isolated Triac Driver REV. 4.00 5/7/02 AN-3004 APPLICATION , dV/dt Test Circuit 2 REV. 4.00 5/7/02 APPLICATION NOTE AN-3004 10000 600 dV/dt , REV. 4.00 5/7/02 3 AN-3004 APPLICATION NOTE Unintended Trigger Delay Time To calculate Fairchild Semiconductor
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AN-3004 diode 1n40001 1N40001 1n40001 DIODE TRIAC FT 12 triac inductor noise suppression moc3063 application note AN300000
Abstract: SMD Switching Diode CDSV3-19-G/20-G/21 -G High Speed RoHS Device Features -Fast switching diode. -Surface mount package ideaiiyfor automatic insertion. -For general purpose switching , T 0.016(0.40) à " 0.008(0.20) 0.078(2.00) 3.004(0.10)max. 0.004(0.10)min. Dimensions in , V Diode capacitance Cd Vr=0V, f=1 MHz 5 PF Reverse recovery time trr lF=lR=30mA, lrr=0. 1xIr 50 nS REV:A QW-B0025 Page 1 SMD Switching Diode Characteristic Curves (CDSV3-19-G/20-G/21 -
OCR Scan
CDSV3-19-G smd diode marking F1 smd KT2 smd marking G MIL-STD-750 CDSV3-20-G CDSV3-21 CDSV3-21-G CDSV3-19-G/20-G/21-G
Abstract: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device COAÌCHII» SMD Diodes Specialist # Features -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PNjunctionguardringfor transient and ESD protection , ) =m 3.004(0.10)m 0.003(0.08) 0.096(2.45) 0.085(2.15) Dimensions in inches and (millimeters , QW-BA015 Page 1 COAÌCHII» SMD Schottky Barrier Diode Arrays SMD Diodes Specialist ELECTRICAL -
OCR Scan
CDBV6-54AD-G diode smd marking SD SMD kl7 smd schottky diode sot363 marking KLB smd marking rl 54t diode MIL-STD-202 CDBV6-54CD-G CDBV6-54SD-G CDBV6-54BR-G CDBV6-54T-G
Abstract: thomson-csf rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 1 \ three phase métal stocks thomson-csf ponts triphasés métalliques vr "mu Type» = recom- Diodes Heatsink Mechanical code vrrm (v) mended (v) Convecteur Code mécanique 70 a / tamb - 45°c GD 503 546 (C) 400 110 RG 604 GF 503 546 (C) 600 220 RG 606 6xCB80 546 GJ 503 546 (C , °c GD 611 656 (C) 400 110 TV 3004 GF 611 656 (C) 600 220 TV 3006 6xTNF150 656 GJ 611 656 (C) 1000 -
OCR Scan
diode 736 ku 606 KU 608 Mu 503 DIODE REDRESSEMENT DIODE 100A TNF150
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