NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: coil @ nominal coil voltage 100Hz square wave Diode suppression Relay Specifications Insulation , (1.9) 0.142 (3.6) MAX 0.313 (7.95) 0.015 (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 3-0.04 (3-1.02) 0.071 (1.8) 0.051 (1.3) 1.42 MAX (3.6) 3-0.04 (3-1.02) 0.184 (4.67 , 0.313 (7.95) 0.015 (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 0.039 +0.012 -0.012 (1.0) 1 2 , (0.38) 3-0.04 +0.004 -0.004 (3-1.02) 0.213 (5.4) 0.059 (1.5) 3-0.04 (3-1.02) 2R-54J 2R-54J ... | Original |
2 pages, |
3004 diode 071 0039 datasheet abstract |
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| Abstract: Contacts / Shield to coil @ nominal coil voltage 100Hz square wave Diode suppression Relay , 0.5 +0.012 (12.7) 0.015 (0.38) -0.004 3-0.04 +0.004 (3-1.02) 0.065 (1.65) 0.063 +0.012 , ) 3-0.04 (3-1.02) 1E-54A/1E-14A/1E-24A 1E-54A/1E-14A/1E-24A 0.406 (10.3) 4-R0.008 (4-R0.2) 1E-54G/1E-14G/1E-24G 1E-54G/1E-14G/1E-24G , ) 3-0.04 (3-1.02) 0.184 (4.67) MAX MAX 0.39 (9.9) 0.015 (0.38) -0.004 3-0.04 +0.004 , ) 0.015 (0.38) -0.004 3-0.04 +0.004 (3-1.02) 2 4 6 8 0.021 (0.53) 0.04 +0.012 -0.012 ... | Original |
2 pages, |
datasheet abstract |
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| Abstract: HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEATURES These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low , HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C , website: http://www.microsemi.com DO-4 PIN DIODE APPLICATIONS/BENEFITS MRI Applications. High , 1.5 1.5 1.5 TSTG TOP RJC °C °C °C/W ELECTRICAL CHARACTERISTICS Parameter Diode ... | Original |
2 pages, |
HUM3004 HUM3003 HUM3002 high power pin diode 3004 diode HUM3002/3003/3004 HUM3002/3003/3004 abstract |
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| Abstract: Microchip Technology Inc. DS40160A/3_004-page 1 Sensor Interface THE ADC PARTS LIST Capacitors , Resistors: D1 D4 Zener diode 4.7 Volts (1N4734A 1N4734A) It is needed to measure voltages higher than 5.0 Volts. If the voltage will not exceed 5.0 Volts it is better to remove this diode. 1.0 MOhm 1.0 , and the capacitor difference. DS40160A/3_004-page 2 t = -T ln(1 - U/E) t = -RC ln(U/E , DS40160A/3_004-page 3 Sensor Interface APPENDIX B: SOURCE CODE ;ADC ;Author: Kirill Yelizarov ... | Original |
12 pages, |
pic12c508 source PIC12C508 MPASM code macro digital counter sensor 1N4734A P12C508 12C508 PIC12C508 abstract |
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| Abstract: ISO-9001 ISO-9001 CERTIFIED BY DSCC H-BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 3004 4707 Dey , Avalanche Rated Devices 55 Volt, 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3004 , for use in today's sophisticated servo motor and disk drive systems. The MSK 3004 is a replacement ... | Original |
5 pages, |
P channel MOSFET 10A schematic MSK3004 4707 N Channel MOSFETs 3004 transistor 3004 IC MPM3004 ISO-9001 ISO-9001 abstract |
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| Abstract: ISO-9001 ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3004 4707 , Conductivity Avalanche Rated Devices 55 Volt, 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 , The MSK 3004 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3004 is a ... | Original |
5 pages, |
MSK3004 mosfet p-channel 10A 4707 N Channel MOSFETs P channel MOSFET 10A P channel MOSFET 10A schematic 3004 IC MPM3004 ISO-9001 ISO-9001 abstract |
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| Abstract: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3004 4707 Dey Road Liverpool, N.Y. 13088 , , 10 Amp Full H-Bridge DESCRIPTION: The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The MSK 3004 uses M.S.Kennedy's proven power , servo motor and disk drive systems. The MSK 3004 is a replacement for the MPM3004 MPM3004 with only minor ... | Original |
5 pages, |
MSK3004 MPM3004 datasheet abstract |
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| Abstract: Diode suppression Contact Ratings Switching Voltage Switching Current Carry Current Contact , 5 0.015 (0.38) -0.004 0.059 +0.004 (1.51) 3-0.04 +0.004 -0.004 (3-1.016) 4-R0.008 , ) 0.382 MAX (9.7) 0.085 (2.15) 0.413 (10.5) 3-0.04 (3-1.016) 0.085 (2.15) 0.244 (6.2 ... | Original |
2 pages, |
1D-16A 1060hPa 1D-16A abstract |
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| Abstract: Diode suppression 9E-50J/9E-10J 9E-50J/9E-10J 0.15 (3.81) MAX 0.079 (2.0) 0.015 (0.38) +0.004 0.1 , +0.012 0.035 -0.012 (0.9) 0.021 (0.53) 0.142 (3.6) +0.012 0.035 -0.012 (0.9) 3-0.04 -0.004 (3-1.02) 9E-54J/9E-14J 9E-54J/9E-14J 1 2 3 4 1 2 3 4 8 7 6 5 3-0.04 (3-1.02 ... | Original |
2 pages, |
375 07 1E-14J 1E-14J abstract |
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| Abstract: TA=100°C IF=1A, IR=0.5A, Irr=0.25A Reverse recovery time y Diode capacitance Thermal resistance , UF3001 UF30013004 UF3005 UF30053007 UF3001 UF30013004 UF3005 UF30053007 Symbol VF VF VF IR IR trr trr CD CD RthJA , Ambient Temperature ( °C ) 15470 IFSM Peak Forward Surge Current ( A ) 4 C D Diode , specified) 1 15473 10 100 VR Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. ... | Original |
4 pages, |
UF3007 UF3006 UF3005 UF3004 UF3003 UF3002 UF3001 Able 3004 diode UF3001 abstract |
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| * ; 400V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3004 D ( IS=9.58u RS=15.4m BV=400 IBV=5.00u + CJO=139p M=0.333 N=3.45 TT=72.0n ) www.datasheetarchive.com/files/diodes-inc/spice-model/3633.mod |
Diodes, Inc. | 04/09/2012 | 0.18 Kb | MOD | 3633.mod |
| ) * ; 400V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1 www.datasheetarchive.com/files/diodes-inc/spice-model/diodes_fast-super-fast-ultra-fast-recovery-rectifiers.txt |
Diodes, Inc. | 22/10/2012 | 27.39 Kb | TXT | diodes_fast-super-fast-ultra-fast-recovery-rectifiers.txt |
| * ; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) www.datasheetarchive.com/files/diodes-inc/spice-model/2846.mod |
Diodes, Inc. | 04/09/2012 | 0.18 Kb | MOD | 2846.mod |
| * ; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) www.datasheetarchive.com/files/diodes-inc/spice-model/2847.mod |
Diodes, Inc. | 04/09/2012 | 0.18 Kb | MOD | 2847.mod |
| * ; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM D1 1 = A 2 = C DI_MMBD3004BRM .MODEL DI_MMBD3004BRM D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m www.datasheetarchive.com/files/diodes-inc/spice-model/2869.mod |
Diodes, Inc. | 04/09/2012 | 0.3 Kb | MOD | 2869.mod |
| Regulator Diode 1N3004A Scottsdale Zener Voltage Regulator Diode 1N3004B Scottsdale Zener Voltage Regulator Diode JAN 1N3004B Scottsdale Zener Voltage Regulator Diode JANTX 1N3004B Scottsdale Zener Voltage Regulator Diode JANTXV 1N3004B Scottsdale Zener Voltage Regulator Diode 1N3005A 1N3005A 1N3005A 1N3005A Scottsdale Type PDF 1N3000A 1N3000A 1N3000A 1N3000A Scottsdale Zener Voltage Regulator Diode 1N3000B 1N3000B 1N3000B 1N3000B www.datasheetarchive.com/files/microsemi/products/partno/1n300.htm |
Microsemi | 03/12/1999 | 31.05 Kb | HTM | 1n300.htm |
| * ; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004C .MODEL DI_MMBD3004C D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m www.datasheetarchive.com/files/diodes-inc/spice-model/2870.mod |
Diodes, Inc. | 04/09/2012 | 0.26 Kb | MOD | 2870.mod |
| * ; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004S .MODEL DI_MMBD3004S D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m www.datasheetarchive.com/files/diodes-inc/spice-model/2871.mod |
Diodes, Inc. | 04/09/2012 | 0.26 Kb | MOD | 2871.mod |
| * ; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004A .MODEL DI_MMBD3004A D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m www.datasheetarchive.com/files/diodes-inc/spice-model/2868.mod |
Diodes, Inc. | 04/09/2012 | 0.26 Kb | MOD | 2868.mod |
| *SRC=1N5711W 1N5711W 1N5711W 1N5711W;DI_1N5711W 1N5711W 1N5711W 1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W 1N5711W 1N5711W 1N5711W D ;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 BAS40 BAS40 BAS40 D ( IS=6.12u RS=0 Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL *SRC=BAT54 BAT54 BAT54 BAT54;DI_BAT54 BAT54 BAT54 BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT54 BAT54 BAT54 BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54A BAT54A BAT54A BAT54A;DI_BAT54A BAT54A BAT54A BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc www.datasheetarchive.com/files/diodes-inc/spice-model/all.txt |
Diodes, Inc. | 23/10/2012 | 1445.73 Kb | TXT | all.txt |