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2sk4108 Datasheet

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2SK4108 Toshiba Silicon N-Channel MOS Type Switching Regulator Applications Original

2sk4108

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4108 Unit: mm , 2SK4108 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Symbol Test , equipment. hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4108 ID , 2SK4108 RDS (ON) - Tc IDR - VDS 100 Common source VGS = 10 V Pulse Test Drain reverse , (nC) 4 2009-09-29 2SK4108 EAS ­ Tch SAFE OPERATING AREA 1000 EAS (mJ) 1000 Toshiba
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toshiba k4108 k4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108 2-16C1B
Abstract: 2SK4108 NMOS (-MOS) 2SK4108 : mm · · : |Yfs| = 14 S () · · , 25 3: 1 3 MOS 1 2009-09-29 2SK4108 (Ta = 25 , () No. 4 RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK4108 , 1 10 1 100 ID (A) 10 3 100 ID (A) 2009-09-29 2SK4108 , ) 10000 0 1.2 RDS (ON) () 1.0 0 120 (nC) 2009-09-29 2SK4108 EAS ­ Tch Toshiba
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SC-65
Abstract: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4108 Switching , 2SK4108 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Test , package or lead (Pb)-free finish. 2 2007-06-29 2SK4108 ID ­ VDS ID ­ VDS 10 20 Common , 1 10 100 Drain current ID (A) 3 2007-06-29 2SK4108 RDS (ON) - Tc IDR - VDS , Gate-source voltage 0 -80 0 120 Total gate charge Qg (nC) 4 2007-06-29 2SK4108 EAS ­ Toshiba
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2SK410
Abstract: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ï'-MOS VI) 2SK4108 , . Handle with care. 1 2007-06-29 2SK4108 Electrical Characteristics (Ta = 25°C) Characteristic , 2007-06-29 2SK4108 ID â'" VDS ID â'" VDS 10 20 Common source 10 Tc = 25°C Pulse Test 10 , 10 100 Drain current ID (A) 3 2007-06-29 2SK4108 RDS (ON) â' Tc IDR â' VDS , 2SK4108 EAS â'" Tch SAFE OPERATING AREA 1000 EAS (mJ) 1000 ID max (pulse) * 100 Toshiba
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Abstract: TPCA8030-H (0.011) N TPCA8031-H (0.011) 25 2SK4207 (0.95) 19 2SK4108 (0.27) TPCA8022-H (0.026 , 0.55 - TO-220SIS TK20J50D 20 0.27 2SK4108 TO-3P(N) TK13A60D 12 13 0.43 , 2SK4108 2SK3767 2SK3567 Toshiba
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2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK941 equivalent BCE0017F E-28831 BCE0017G
Abstract: ) 2SK3117 (0.27) TK20H50C (0.27) 2SK4108 (0.27) 23 6 2SK3903 (0.44) TPCA8022-H (0.026) 32 , 2SK3561 2SK3568 2SK4012 2SK3934 TK15H50C 2SK4107 2SK3905 TK19H50C TK20H50C 2SK4108 2SK3767 Toshiba
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2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent BCE0017E S-167
Abstract: 2SK2967 2SK2601 2SK4107 2SK3314* 2SK3905 2SK4108 2SK3907 2SK3936* 2SK2602 2SK2699 2SK3903 Toshiba
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2sK2750 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit toshiba f5d 2SK2545 equivalent POWERMOSFET07 TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105
Abstract: ) 2SK3445(0.105) 2SK3994(0.105) TK19H50C(0.3) 2SK2837(0.27) 2SK3117(0.27) 2SK4108(0.27) TK20H50C , TK19H50C 2SK4108 TK20H50C 2SK3767 2SK3567 2SK4110 2SK3562 2SK3667 2SK4112 2SK4111 2SK3569 Toshiba
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2SK4106 2sk3797 equivalent 2SK2996 equivalent 2sK2961 equivalent 2SK2843 equivalent 2SK4115* equivalent BCE0017D
Abstract: - TO-220SIS TK20J50D TK6A53D 20 6 0.27 1.3 2SK4108 TO-3P(N) TO -
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2sk2671 2sk4113 2SK2648 2N5121 FET 2SK565 2SK2666 2SK258 2SK259 2SK258H 2SK259H 2N5120DIE 2C5120
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