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Part : 2SK1170-E Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2SK117-BL(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 1,000 Best Price : $1.41 Price Each : $1.73
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2sk117 Datasheet

Part Manufacturer Description PDF Type
2SK117 N/A Semiconductor Master Cross Reference Guide Scan
2SK117 N/A FET Data Book Scan
2SK117 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SK117 N/A Shortform Datasheet & Cross References Data Scan
2SK117 N/A Basic Transistor and Cross Reference Specification Scan
2SK117 N/A Shortform Transistor PDF Datasheet Scan
2SK117 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan
2SK117 Toshiba N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) Scan
2SK117 Toshiba Junction FETs Scan
2SK117 Toshiba N-Channel MOSFET Scan
2SK1170 Hitachi Semiconductor Mosfet Guide Original
2SK1170 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1170 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1170 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1170 Renesas Technology Silicon N Channel MOS FET Original
2SK1170 Renesas Technology Silicon N-Channel MOS FET Original
2SK1170 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1170 N/A FET Data Book Scan
2SK1170 N/A Shortform Datasheet & Cross References Data Scan
2SK1170 N/A Catalog Scans - Shortform Datasheet Scan
Showing first 20 results.

2sk117

Catalog Datasheet MFG & Type PDF Document Tags

2SK117

Abstract: 2SK117 gr 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Maximum Ratings , 2003-03-25 2SK117 2 2003-03-25 2SK117 3 2003-03-25 2SK117 RESTRICTIONS ON PRODUCT
Toshiba
Original
2SK117 gr TOSHIBA 2SK117 TRANSISTOR 2SK117 2sk1173 SC-43

2SK117

Abstract: TOSHIBA 2SK117 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 2SK117 LO W NOISE AUDIO AM PLIFIER APPLICATIONS 5.1 MAX. Unit in mm · · · · High |Yfs| : |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) 0.45 0.55 MAX. 0.45 High Breakdown Voltage · VGDS= - 50V : NF = , TO SHIBA 2SK117 STATIC CHARACTERISTICS ID - V d S (LOW VOLTAGE REGION) GATE-SOURCE , without notice. 1997 04-10 2/3 - TOSHIBA 2SK117 NF - y d s NF - I d 10 15
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OCR Scan
961001EAA2

2sk117

Abstract: 2SK1173 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Absolute , 2SK117 2 2007-11-01 2SK117 3 2007-11-01 2SK117 RESTRICTIONS ON PRODUCT USE ·
Toshiba
Original

2SC1815

Abstract: 2sk117 [8] 4. 4.1 Vin = 15 V~40 V RD (FET PD ) 2SK117 RS Iz 6 mA - ID - Ta , FET 2SK117 RG 10 M COM FET 2SK117 Ta = -20~100°C 5.8 = 9 RL = - , 2 k R4 VON (15 V) 750 10 k FET 2SK117 VIN (0~10 V) R8 9&& = 9 9( = - 9 9,1 = a 9 9&7/ 9567 2SK117 × 2 = 9 VIN , VCC (7 V) FET -2 0P -1 VOUT [8] 5.10 FET 2SK117 R1 G
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Original
2SC1815 2SC521A 2SC185 2SD867 3D4B41 2SA1015 1D4B42 2SK30ATM 6D4B41 k 513 02CZ5 02CZ6 2SC3419

2sk117

Abstract: TOSHIBA 2SK117 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Maximum Ratings , 2SK117 2 2003-03-25 2SK117 3 2003-03-25 2SK117 RESTRICTIONS ON PRODUCT USE
Toshiba
Original
Abstract: TO S H IBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS . 5.1 MAX. : |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) â'¢ High |Yfs| â'¢ â'¢ High Breakdown Voltage : V g d S = - 50V : NF , TO S H IBA 2SK117 STATIC CHARACTERISTICS ID - VDS (LOW VOLTAGE REGION) H 5 5 H Â , 04-10 2/3 TO S H IBA 2SK117 NF - NF - Id v DS z & < DÃ Ã3 U Ã C W 0 -
OCR Scan

2SK117

Abstract: 2SK117 gr 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Absolute , 2SK117 2 2007-11-01 2SK117 3 2007-11-01 2SK117 RESTRICTIONS ON PRODUCT USE
Toshiba
Original

2SK117

Abstract: TOSHIBA 2SK117 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 2SK117 LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. · H igh |Yfc| : |Yfs | = 15mS (Typ.) (VDS = 10V, V g s = 0) · · H igh Breakdown Voltage Low N oise U n it in mm · VGDS= - 50V : NF = l.OdB (Typ.) (VDs = 10V , a < O H H O O 3 S3 2001 05-31 - 2SK117 TO SH IBA 2SK117 , ) AMBIENT TEMPERATURE Ta (°C) 3 2 001 05-31 - TO SH IBA 2SK117 RESTRICTIONS ON PRODUCT USE
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OCR Scan

2SK30A

Abstract: 2SK147 (V) 2SK117 )(7 6. 9 , 9 , 6. 1 )(7 '6 ' *6 ' 9 , 026 , ; '6PD[ *6; 5.2 '6 FE (IGSX-VDS ) VDS 2SK30ATM 2SK117 2SK147 2SK170 , 20 25 VDS (V) (IG) VDG (V) 5.20 2SK117 96 IGSX-VDS 30 24 28 32 , = 1 kHz -8 10 2SK30A, 2SK117, 2SK147 2SK30A L 2SC1815 10 -9 2SK117 RG 4kT , µ 31 2SK117 (mA) , ' ' = -0.1 -0.2 -0.3
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Original
2SK112 2SK113 3SK101 JFET 2SK30A 2SK30A D 2SK373 2SK15

2SK117

Abstract: 2SK117 gr T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 LOW NOISE AUDIO AM PLIFIER APPLICATIONS 2SK117 U nit in mm . 5.1 MAX. 0-45 0.55 M AX. 0.45 · · · · High |Yfe| High Breakdown Voltage Low Noise High Input Impedance : IYfs| = 15mS (Typ.) (VDS = 10V , /3 T O S H IB A 2SK117 STATIC CHARACTERISTICS ID - VDS (LOW VOLTAGE REGION) 1 2 , IB A 2SK117 NF - V d S CO M M O N SO U R C E I q = 0.5m A faRG = lk ii NF - Id ¡Z 0
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OCR Scan

TOSHIBA 2SK117

Abstract: 2sk117 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. U nit in mm High |Yfs| T T icrV i "RrpalrHnwn Vnltacrp · Low Noise |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) W i t \C 1 = · v jriv o _ iñ fiV - · , TOSHIBA 2SK117 STATIC CHARACTERISTICS ID - Vd S (LOW VOLTAGE REGION) GATE-SOURCE VOLTAGE , o 2SK117 UJ UJ
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OCR Scan

ISS226

Abstract: ISS184 TOSHIBA -CDISCRETE/OPTO > Sb DE | 1017ESD DDD71G3 =1X" -{ 9097250 TOSHIBA ( D I SCRETE / OPTO ) 5bC 07 103 S'f". K, - .r: - v 0 3"oCf FET Type Application Electrical characteristic (Ta = 25°C) Marking Sinni liar Type Remarks Vdsx * * Vgdo Vgrd* (V) Ig,Id* (mA) PD(itiW) loss(mA) lYfsl (mS) 2SK208 Low frequency amplifier -50 10 100 0.3 ~ 6.5 1.2 MIN. J 2SK30ATM 2SK209 Low noise low frequency amplifier -50 10 150 0.6 ~ 14 15 X 2SK117 2SK210 FM RF amplifier -18* 10 100 3.0
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OCR Scan
2SK211 2SK161 2SK302 ISS154 ISV128 ISV99 ISS226 ISS184 fet 2sK161 Low frequency amplifier 2SK192A 2SK241

ISS226

Abstract: ISV99 FM R F am plifier 10 10 10 30* 15 7 TYP. 9 TYP. 10 TYP. X Y K T 2SK117 2SK 192A 2SK161
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OCR Scan
2sk toshiba u marking amplifier marking A3 amplifier 302V

2SC1815 2SA1015

Abstract: 2SK117 j) High Speed SW 2SK117 2SC2878 2SC3112 2SC752©TM 2SA970 2SA970 2SA950 2SA562TM 2SJ103 2SK330 2SJ105
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OCR Scan
2SC1923 2SC941TM 2SC380TM 1SV103 3SK195 2SC2240 2SC1815 2SA1015 2sk389 2sj74 2sk246 2SC4667 2SC2668 SC-59 2SC2714 SC-70 2SC4215

2SJ111

Abstract: 2SJ110 > JUNCTION FET^ Type No. IDSS |Yfs| TYP. (MIN.) Crss TYP. NF MAX. Application VGDS "G Pd Vds VGS vDs VGS vds F vDs "D f Rg N-Channel P-Channel (V) (mA) (mW) (mA) (V) (V) (mS) (V) (V) (pF) (V) (MHz)
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OCR Scan
2SK362 2SK363 2SK364 2SK369 2SJ110 2SJ111 2sj111 fet 2SJ104

2sj111 fet

Abstract: 2SJ111 ufcUM o 3: a to -3 (O to cn N ro M 0 > rS W H to n 70 m -3 m \ o 13 -3 O < -r> o > JUNCTION FET < IDSS Type No. A p p lic a t io n General Purpose High lY fs l Lo w Noise High lY fs l L o w Noise A nalog SW & General Purpose (H ew ) (N EW ) (n e w ) High lY fs l Low Noise High Voltage. Constant Current & Analo g SW High lY fs l Lo w Noise A n alo g SW & General Purpose (N E W ) CNEVg) High lY fs l Low Noise (JMEVÜS) CS0& rKTFûA M Stvjy N-Channel 2SK30ATM 2SK117 2SK170
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OCR Scan

2sk170 FET

Abstract: fet to92 Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity -50.0 1.2 50.0 -1.2 -50.0 1.2 -50.0 1.2 -40.0 5.0 -40.0 2.6 -40.0 2.6 Nch -50.0 -40.0
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Original
2sk170 FET fet to92 Junction-FET 2SJ14 fet data book 2SJ-10

2sj111

Abstract: 2sj110 *â'" 8 . , N-Channel ! S 1 to * 8 2SK117 ! o i*. Tâ'" XL 8 _i 2SK246 ! 2SK362 ; 2SK363 ; (O n
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OCR Scan
TOSHIBA 2SK362 TOSHIBA 2SK369

2SK241 Equivalent FET

Abstract: 2SK117 equivalent UN UP Equivalent other package Type No. 2SK30ATM 2SK117 2SK192A 2SK161 2SK241 2SK373 2SK982 -
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OCR Scan
TA4000F 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK1062 2SK1771 2SK1826 2SK182S 2SK2033 2SK2036

buz90af

Abstract: P7NB60FP ,05 - 0,35 T092 2SK117 50 0,005 - - T092 2SK163 50 0,001 - 0,4 T092 2SK184 50 0,014 - 0,2 T092
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OCR Scan
2SK192 2SK125 BUZ100 BUZ350 2SK1377-TOS 2SK1117 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP buz91a 2SK212 BF960 BF961 BF964 BF966S

2SJ74

Abstract: 2SC3136 ~6.5 10 0 (1.2) 10 0 General Purpose 2SK117 -50 10 300 1.2~14 10
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Original
2SC732TM 2SC3329 2SA1316 2SC1959 2SC2120 2SC1627 2SC3136 2SA1349 2sc2240 equivalent
Showing first 20 results.