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Part : 2SC1621(0)-T1B-A Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 31,000 Best Price : $0.12 Price Each : $0.15
Part : 2SC1621 Supplier : NEC Manufacturer : Bristol Electronics Stock : 50 Best Price : $0.3750 Price Each : $0.75
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2sc1621 Datasheet

Part Manufacturer Description PDF Type
2SC1621 Kexin NPN Silicon Epitaxial Transistor Original
2SC1621 NEC Semiconductor Selection Guide 1995 Original
2SC1621 NEC Semiconductor Selection Guide Original
2SC1621 TY Semiconductor NPN Silicon Epitaxial Transistor - SOT-23 Original
2SC1621 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SC1621 N/A Transistor Shortform Datasheet & Cross References Scan
2SC1621 N/A Shortform Transistor PDF Datasheet Scan
2SC1621 N/A Japanese Transistor Cross References (2S) Scan
2SC1621 N/A The Transistor Manual (Japanese) 1993 Scan
2SC1621 N/A Transistor Substitution Data Book 1993 Scan
2SC1621 N/A Shortform Transistor Datasheet Guide Scan
2SC1621 N/A The Japanese Transistor Manual 1981 Scan
2SC1621 NEC HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD Scan
2SC1621B2 N/A Shortform Transistor PDF Datasheet Scan
2SC1621B2 N/A Semiconductor Master Cross Reference Guide Scan
2SC1621B3 N/A Shortform Transistor PDF Datasheet Scan
2SC1621B3 N/A Semiconductor Master Cross Reference Guide Scan
2SC1621B4 N/A Shortform Transistor PDF Datasheet Scan
2SC1621B4 N/A Semiconductor Master Cross Reference Guide Scan
2SC1621-L NEC Silicon Transistor Scan
Showing first 20 results.

2sc1621

Catalog Datasheet MFG & Type PDF Document Tags

b3 smd transistor

Abstract: smd transistor marking B3 Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High speed : tstg=20ns MAX. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter , 2SC1621 hFE Classification Marking B3 B4 hFE 2 B2 40 80 60 120 90 180
Kexin
Original
b3 smd transistor smd transistor marking B3 SMD transistor b3 smd b3 smd transistor b2 smd transistor B4
Abstract: Product specification 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High speed : tstg=20ns MAX. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector , specification 2SC1621 hFE Classification Marking B2 B3 B4 hFE 40 80 60 120 90 180 TY Semiconductor
Original

2SC3998

Abstract: 2sc4640 2SC4453 2SC3437 2SC1621 2SC3440 2SC4699K 2SC 4783 s a 2SC4738 2SD2216 2SC4617 2SC 4784 y a iL , 2SC 4790 s s 2SC1621 2SD1819A 2SC3052 2SD2114K 2SC 4791 s iL 2SC4873 2SC4095 2SC4805 2SC
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OCR Scan
2SC1815 2SC4905 2SC3310 2SC3998 2SC2759 2SD1546 2sc4640 4793 2sd637 2sc2555 2SC4406 2SC4244 2SC4463 2SC3932 2SC4407 2SC4250

2SC1621

Abstract: transistor marking 9D f^EC SILICON TRANSISTOR ai I â"¢"MV'Å' 2SC1621 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD PACKAGE DIMENSIONS in millimeters Marking B2 B3 B4 hFE 40 to 80 60 to 120 90 to 180 , are free from patent infringement. NEC Corporation © 1985 NEC Corporation 2SC1621 NEC ELECTRON , 100 RRF-Base to Emitter Resistance kQ SEC ELECTRON DEVICE 2SC1621 GAIN BANDWIDTH PRODUCT vs , CURRENT ion 0.5 1 2 5 |r1 Base Current mA in 9D 2SC1621 NEC BLECTRON DEVICE SWITCHING TIME TEST
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OCR Scan
transistor marking 9D NECTOKJ22686 TC-1642

2SC1621

Abstract: lm 3773 =tâ'"5> â'¢ 2/â'" h ->IJZI> \ =7 >ì> ? Silicon Transistor 2SC1621 NPNX tr^ + ^Tiu^^ =3 > h , 2SC1621 (Ta = 25 °C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO , 100 - , (mA) 3 SEC 2SC1621 X'f 7f > ^maasà nis& ton, toff tstg iitetas^ Vin 3.3 kQ -VW 220 Q 0.1 , =50 a -10 V 'El 0 Vout -10 % "A" ¡cfctt -10 tstg 4 SEC 2SC1621 5 CM (O u c/) CM I â
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OCR Scan
lm 3773 TC-5170A

2sc1621

Abstract: SILICON TRANSISTOR 2SC1621 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FE A T U R E PACKAG E D IM E N S IO N S in m illim e te rs · High Speed : tstg = 20 ns M A X , n M a rk in g *F E ! B2 4 0 to 8 0 B3 6 0 t o 1 20 ; B4 9 0 t o 1 80 2 t8 2SC1621 TY P IC A , Saturation Voltage ·V t ç - C o lle c to r C u rre n t - m A 2 I9 2SC1621 G A I N B A N D W I D , Time - n s Ì 0 1 - Base Current - mA ¡B 1 Base Current mA 220 2SC1621 S W IT C H
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OCR Scan

2SC1621

Abstract: 2SC1621-T ELECTRON DEVICE NEC / / SILICON TRANSISTOR 2SC1621 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD ^ FEATURE P A C K A G E D IM E N S IO N S in m illim eters · High Speed : tstg = 20 ns M A X . A B S O L U T E M A X IM U M R A T IN G S Maximum Voltages and Current , Corporation © 198 5 NEC Corporation 274 2SC1621 T Y P IC A L C H A R A C T E R IS T IC S , MHz &ECTR0N OCVKX 2SC1 621 2SC1621 S W IT C H IN G T IM E T E S T C IR C U IT S E C
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OCR Scan
2SC1621-T

2SC1583

Abstract: 2SC1594 dâ'"a HV A 210 0.03 0.15 1 150 56 270 3 0.005 1 0. 002 0. 0002 2SC1621 HB HS SW 40 20 0.2 0. 2 0.1 , * (FTR) ECB 2SC1615 200 10 0.01 0.02 0.02 6 (SC-59) EBC 2SC1621 50 6 0. 001 2.5 {SCâ
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OCR Scan
2SC1515K 2SC1516K 2SC1517AK 2SC1518 2SC1545 2SC1545M 2SC1583 2SC1594 2SC1592 2SC1645

2SC5072

Abstract: 2SC4703 2SD2258 2SD1660M 2SC 4698 a a 2SD2342 2SC 4699 â¡ -A 2SC4168 2SC1621 2SD1819 2SC3052 2SC
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OCR Scan
2SC4181 2SC4443 2SC4176 2SC4700 2SC4523 2SD1412 2SC5072 2SC4703 2SC470-3 4670K 2SC4698 4685 2SD1823 2SD2351 2SD1977

2SC16

Abstract: 2SC1621 , 2SC1621R High Speed Switching NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in , test circuits. ·Pulsed: PW^35Qms .d u ty c y c le d 2% hpg Classification 2SC1621 MARK h FE 2 S C 16 21 R B2 28 4 0 -8 0 B3 3B 6 0 - 120 B4 4B 9 0 -1 8 0 87 2 S C 1 6 2 1 , 2SC1621R , 2 1 , 2SC1621R G A I N B A N D W I D T H P R O D U C T vs. E M IT T E R C U R R E N T D E L A , , 2SC1621R SWITCHING TIME TEST CIRCUITS Fig. 1 to n . t o f f T E S T C IR C U IT 22 O il 0 1 *F Vout
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OCR Scan
2SC16

2Sc945 equivalent

Abstract: 2SA733 equivalent /2SC1009R 2SC1321 2SC1621/2SC1621R 2SC1622 2SC1623/2SC1623R 2SC16S3 NPN Tranlilto r 2SC1654 2SC2107 2SC2223
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OCR Scan
2SA603 2222AR 2SC800 2SC1216 2SC923 JE9016 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 2907AR TM3906/NTM3906R

2SC3763

Abstract: 2SD1267A ¡ â'"A 2SC2859 2SC1621 2SC2619 2SC2404 2SC3053 2SC 3850
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OCR Scan
2SC3356 2SC2335 2SC3536 2SC3872 2SC3435 2SC3759 2SC3763 2SD1267A 2SC3691 3841 3843 3844 2SC4085 2SC4415 2SC3513 2SC3087

2SC4290A

Abstract: C 4927 2SC4168 2SC3437 2SC1621 2SC3757 2SC3440 2SC 4912 â¡ â'"a 2SC4443 2SC4213 2SC4175 2SC3938 2SC
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OCR Scan
2SC4911K 2SD1407 2SD2161 2SC4289A 2SD2356 2SC3997 2SC4290A C 4927 2SC4289 4894 2SC343 2SD1828 2SD2113

2sc3667

Abstract: 2SD1590 2SD1913 2SC3225 2SD880 2SD2012 2SD1567 2SD1585 2SC1621 2SD596 2SD1020 2SU1Y00 2SD1697 2SD1700 2SD1565
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OCR Scan
2SC4027 2SD1246 2SD545 2SC2274 2SC3666 2SD1771 2sc3667 2SD1590 2SD1961 2SC269 2SD999 2S01207 2SD1918 2SD1919 2SD1920

2SC1621

Abstract: D8M-D82 ms max. 2 Fout 2SC1621 12 V 8.2 V Legend: T1, Pressure measurement time T2, Response
OMRON
Original
D8M-D82 RN5RL35A S-81235SG pressure sensor response time ms X305-E-1

2sc1695

Abstract: 2SC1694 2SC1620 36 3 600 175 50 13.5 100 1200* 7 (Tc=25ºC) 2SC1621 25 5 200 150 125 85 0.5 1 400
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Original
2SC1612 2SC1616 2SC1619A 2SC1690 2SC1691 2SC1692 2sc1695 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2SC1601 2SC1602 2SC1603 2SC1604 2SC1605 2SC1605A

transistor 5bw

Abstract: TRANSISTOR 5DW Regular 03 U H F A m plifier 30 25 40 10 100 125 900 1.3 2SC1621/ 2SC1621R NPN S«l«con
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OCR Scan
transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 2SA812/ B15/15B Y15/15Y NTM3904/ 3904R B25/25B

2SD1557

Abstract: 2SA1152 ~50 ~40 2SC3735 2SC1621 2SA811A 2SA1247 2SC1622A 2SC3115 FA2[ ] 2SC1653 (130
NEC
Original
2SA1152 2SD1557 2SB1581 2SC4063 2SC4333 high hfe transistor 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674

uPD16305

Abstract: uPD63724A 2SA1461 2SA1462 2SA1464 2SA811A 2SA812 2SB624 2SB736 2SB736A 2SC1009A 2SC1621 2SC1622A 2SC1623 2SC1653
NEC
Original
uPD16305 uPD63724A upc5024 uPD65656 UPC2710 uPA2981 PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016

2sk520

Abstract: 3sk131 cross 211 2SC1009A 2SC1621 2SC1622A 2SC1623 2SC1653 2SC1654 2SC2223 2SC2351 2SC2755 2SC2756 2SC2757
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OCR Scan
2sk520 3sk131 cross 2S880 3SK133A 2SK739 TRANSISTOR AF 416 pnp 1S2835 1S2836 1S2837 1S2838 1SS123 1SS153

tm 1621

Abstract: BD 811 2SC1621 , 2SC1621R High Speed Switching NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters (inchest 2 5 -g 1 :o 096] o 02) 15 0 5 · High speed switching: t on=12ns TYP., t,tg= 7.0ns TYP., to ff = 18ns TYP. · Low collector saturation voltage: V cE (satl = 0.13V TYP. - B -1 " ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (Ta=25°C) Collector to Base , test circuits. ·Pulsed: PW^35Qms .d u ty c y c le d 2% hpg Classification 2SC1621 MARK h FE 2 S
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OCR Scan
BF5457 BF5484 5T2907A BT3904 tm 1621 BD 811 MBD6050 BTA 36 BT6429 BCX17 BF554 BC2107 BF5460

2SC2291

Abstract: 2SC458LG B ¡ â'"A 2SC2859 2SC1621 2SC2619 2SC2404 2SC3053 2SC 3850
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OCR Scan
2SC2291 2SC2412K 2SD1486 2SC945 2SC1345 2SC1740 2SC458LG B 2SC1740 R 2SC2104 2SC891 2SC2480 2SC4639 2SC2712
Showing first 20 results.