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ISOLOWNOISESPLITRAILGEN-REF Texas Instruments 5V Isolated, Low Noise Split Rail Generator (0.25A, 2.5W total) visit Texas Instruments
LOWNOISESPLITRAILNONISO-BOOST-REF Texas Instruments Low Noise Split Rail Non-Isolated Boost + - 12V Power Supply visit Texas Instruments
ISL28227FBZ-T7A Intersil Corporation ISL28227FBZ PB-FREE PRECISION LOW NOISE OPERATIONAL AMPLIFIE visit Intersil
ISL28107SOICEVAL1Z Intersil Corporation Precision Single Low Noise Operational Amplifier; Package: Eval Board visit Intersil

2n3866 noise

Catalog Datasheet MFG & Type PDF Document Tags

BFR90 transistor

Abstract: 2n5583 Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 , J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , Conditions Device Type f MHz Vcc Volts out mW Typ* Min. H MHz Typ* Min. Package 2N3866 2N5179 , noise performance. Devices listed in the matrix are classified according to noise figure performance , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501
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2N6166 MRF306 2N5032 BFR91 MFR901 2N5841 BFR90 transistor mrf502 transistor MRF531 transistor bfr96 BFR91 transistor 144B-04 2N5643 MRF313A MRF517A 2N5635

2N5160

Abstract: 2N5583 Low-Noise The low-noise devices listed are produced with carefully controlled rj, and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus frequency. ( NF FREQUENCY MHz Polarity dB 60 100 200 450 1000 2000 1.5 2N5829 , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501 MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532
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2N5031 2N4957 MRF901 2N2857 MRF911 BFR90 BFR96 2n3866 noise BFR90 amplifier 2N5943 MRF904 2N4958 2N4959

uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 , J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , Conditions Device Type f MHz Vcc Volts out mW Typ* Min. H MHz Typ* Min. Package 2N3866 2N5179 , noise performance. Devices listed in the matrix are classified according to noise figure performance , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501
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MRF905 uhf amplifier design BFR90 2N3866 MOTOROLA MOTOROLA 2N5179 2N2857 MOTOROLA 2n3866 211 MRF5175 2N5636 MRF304 MRF5176 2N5637 MRF5177

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus
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2N3866 MOTOROLA s parameters 145A-09 MOTOROLA SELECTION mrf237 MRF536 Transistor 2N3866 2N3553 motorola 2N5836 2N5837 MRF511 MRF517 MRF525 2N3339

MOTOROLA 2N5179

Abstract: 2N5160 optimize device noise performance. Devices listed in the matrix are classified according to noise figure , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501 MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532 , MHz Min. Typ* Noise Figure Distortion Specifications Package Max. or / Freq. Typ* MHz 2 nd , . r Device Type Gain 40-300 MHz Min. Typ Maximum Distortion Specifications Noise Figure^ Output
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MM4049 2N5835 MHW562 MHW570 BFR90 MOTOROLA 2N5160 MOTOROLA MRF902 2N584I 2N3960 2N6304

rca 2n3375

Abstract: 2N3553 equivalent ' capability (up to 16 outputs) high noise immunity 40% of logic swing x- and y-select drivers, write and , ) propagation delay (1 -f-1 OpF) â  7.3 ns (typ) propagation delay (6-|-60pF) â  noise immunity 4 0 % of , â  High noise immunity 1.2 volts (typ) @ 25°C â  3.8 - 6.3V power supply NAND Logic Dual 4 ,   ultra-low quiescent power dissipation 4-volt noise margin â'"55°C to + 1 2 5 °C operation fanouts > 5 0 , (typ) noise immunity @ 25°C Description and pull-up resistance Series in Flat Pack ( - 55Â
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RCA-CA3000 rca 2n3375 2N3553 equivalent RCA RF POWER TRANSISTOR 2N5070 CA3016 RCA Transistors 000-S 2N1492 RCA-CA3001 RCA-CA3002 RCA-CA3004

mrf502 gold transistor

Abstract: transistor 2n4959 switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0 , the appropriate preceding tables. TO-39 METAL CAN Gain -BW Noise Figure Gain Maximum Ratings , -BW Noise Figure Gian Maximum Ratings h 'c NF f 'C dB f 'C PT Device Type GHz mA dB MHz mA
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MRF309 mrf502 gold transistor transistor 2n4959 Motorola transistors MRF630 244A-01 mrf580 MRF931 BFX89 BFY90 2N6603 2N6604 MRF914 MRF961

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus
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10 GHz PNP transistor npn UHF transistor 2N5179 RF POWER TRANSISTOR NPN, motorola Y parameters of transistors motorola 2N3866 2N2857 JAN MRF962 2N3839 MM8009 MRF571 RF572/M RF2369

MRF536

Abstract: MRF515 switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0 , -205AD 2N5160f 1.0 0.16 8.0 28 TO-205AD 2N3866 1.0 0.1 10 28 TO-205AD MRF313 1.0 0.03 15 28 305A-01
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MRF390 MRF515 mrf237 MOTOROLA BFR96 LOW POWER TRANSISTOR MRF229 MRF237 s-parameter 2N4427 CI17D-01 2N6439 T0-205 MRF5174 MRF321 MRF323

2N3866

Abstract: zetex ztx327 range of Zetex RF Products. Device Type vcb0 VcEO Min. fT at Max. Noise Figure at Cobo or cre Max. pF hfe at P,ot Gpe Package Type V V MHz mA N dB le mA f MHz Min. Max. lc mA mW dB 2N3866 55 30 , frequency applications where high fT, low noise and low intermodulation distortion features are required , access products, and oscilloscopes. Device Type VCBO V Vceo V Min. fT at Max. noise figure at Cobo or , 2N3866 55 30 200 25 - - - 3.0 15 200 50 1000 8.5 TO-39 ZTX327 55 30 500 25 - - - 3.0 15 - 50 1000 8.5
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2N2708 2N918 BSY55 2N2102 zetex ztx327 Zetex bfy90 low noise transistors rf ZTX3866 MPSH10

RF Transistors

Abstract: 2N2708 Ferranti high frequency transistors. Type VCB V VcEO V Max. hpe at fT Min. at Noise Figure at Cobo Max , ) Package Vcbo Volts Vceo Volts Vcc Volts Pout Watts Pg dB Fo MHz 2N3866 55 30 28.0 0.7 8.5 400 TO , Volts Volts Watts dB MHz ZTX327 55 30 12.0 0.35 6.4 400 E-line 2N3866 55 30 28.0 0.7 8.5 400 TO
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BFS20 RF Transistors BF196 2N4036 ZT91 ZT92 BFS20R 100MHZ OT-23 BF196P 100MH

2N5179

Abstract: high gain PNP RF TRANSISTOR switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus
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MRF543 high gain PNP RF TRANSISTOR motorola european master selection transistors for uhf oscillators RF Transistor Selection Selection guide of Transistors case BFX89 MRF544 MRF545 MRF542 317D-01

MRF965

Abstract: 2N5109 motorola switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus
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MRF965 2N5109 motorola 2n6603 transistor BFY90 MOTOROLA MRF586 RF 2N3866

MOTOROLA SELECTION mrf237

Abstract: Motorola transistors MRF630 switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0
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MRF572 MRF604 MRF581 MRF629 MRF630 MOTOROLA Transistor MRF630 Motorola transistors MRF629 motorola MRF515 2n4427 MOTOROLA MRF534 MRF553 MRF607 2N6255

TRANSISTOR 2N2950

Abstract: 2N5342 . FREQ. NOISE FIGURE GAN PACKAGE TYPE VCEO le Plat freie MFANDIe©! PQ 1 « (mA) (mW) (MHU (mA , -39 2N3866 30 500 800 eoo 50 2N4427 20 500 1000 800 50 2N5108 30 400 1000 1200 50 5.0 1000 , ) NOISE FIGURE MFAN0le®f (mA) (MHi) pa (dB) GAM ( (HH2) PACKAGE 1200 1000 1000 2.0 2.0 2.0 3.0
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2N3600 2N5342 2N6305 2N3137 2N2950 TRANSISTOR 2N2950 small signal transistor Transistor 2n3137 2N91S 2N2949

2N3866 MOTOROLA

Abstract: 2N2857 MOTOROLA 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus frequency. NF Frequency
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MRF2369 transistor 2N5179 2N4959 MOTOROLA of transistors npn pnp
Abstract: 2N3866+JANS Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V(BR)CEO (V)30 V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)55 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition , ) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) Noise Figure Min. (dB) @I American Microsemiconductor
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MRF239

Abstract: MOTOROLA TRANSISTOR MRF239 switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0
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MRF260 MRF212 MRF262 MRF4070 MRF238 MRF239 MOTOROLA TRANSISTOR MRF239 mrf239 MOTOROLA T0-206AB T0-205AD 2N6080 T0-220AB MRF261
Abstract: 2N3866+JAN Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V(BR)CEO (V)30 V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)55 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition , ) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) Noise Figure Min. (dB) @I American Microsemiconductor
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Abstract: 2N3866+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V(BR)CEO (V)30 V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)55 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition , ) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) Noise Figure Min. (dB) @I American Microsemiconductor
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