NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N3704 | Allegro MicroSystems, Inc. | General Purpose Bipolar Transistor, NPN, 30 MinV, TO-92, 3-Pin |
5 pages, |
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| 2N3704 | Central Semiconductor | BJT, NPN, Switching Transistor, IC 0.8A |
1 pages, |
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| 2N3704 | Continental Device India Limited | Semiconductor Device Data Book 1996 |
1 pages, |
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| 2N3704 | Continental Device India Limited | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
3 pages, |
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| 2N3704 | Crimson Semiconductor | Transistor Selection Guide |
36 pages, |
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| 2N3704 | Fairchild Semiconductor | NPN General Purpose Amplifier |
2 pages, |
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| 2N3704 | Fairchild Semiconductor | NPN General Purpose Amplifier |
7 pages, |
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| 2N3704 | Fairchild Semiconductor | NPN General Purpose Amplifier |
3 pages, |
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| 2N3704 | Fairchild Semiconductor | Small Signal Transistor |
3 pages, |
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| 2N3704 | Micro Electronics | SILICON GENERAL PURPOSE AF TRANSISTORS |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Datasheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2n3704 2n3705 2n3706 silicon npn transistor jedec t0-92 case (ecb) description The CENTRAL SEMICONDUCTOR 2N3704 thru 2N3706 2N3706 , Current Power Dissipation Operating and Storage Junction Temperature SYMBOL CBO CEO EBO C 2N3704 2N37Q5 2N37Q5 , ) 2N3704 SYMBOL ' CBO 1 EBO BVcbo bvceo bvebo FE VBE(0N) VCE(SAT) 'ob -65 to +150 2n3705 UNIT V ... | OCR Scan |
1 pages, |
transistor 2n3704 2N3704 datasheet 2n3705 2N3706 2N3704 datasheet abstract |
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| Abstract: 2N3704 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise , 2N3704 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3704 Discrete POWER & Signal , Cycle 2.0% 12 100 pF MHz 2N3704 NPN General Purpose Amplifier ... | Original |
2 pages, |
PN100 equivalent 2n3704 2N3704 datasheet 2N3704 equivalent transistor 2n3704 2N3704 abstract |
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| Abstract: , Duty Cycle < 2% u 2N3704_2N3705Rev_1 081205E 081205E Continental Device India Limited Data Sheet , 17" x 15" x 13.5" 32K 12.5 kgs 2N3704_2N3705Rev_1 081205E 081205E Continental Device India Limited , Electronic Equipment (WEEE). 2N3704_2N3705Rev_1 081205E 081205E Continental Device India Limited Data Sheet , , 4141 1119 email@cdil.com www.cdilsemi.com 2N3704_2N3705Rev_1 081205E 081205E Continental Device India , SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 2N3705 TO-92 Plastic Package For Lead Free Parts, Device ... | Original |
4 pages, |
transistor 2n3704 equivalent transistor 2n3704 BC635 TRANSISTOR E C B BC635 2N3705 2N3704 2N3704 abstract |
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| Abstract: 2N3704 & 2N3705 2N3705 General Purpose Transistor Description: · NPN Silicon Planar Epitaxial Transistors. 2N3704 NPN 2N3705 2N3705 NPN TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 , Base 2. Emitter 3. Collector Page 1 31/05/05 V1.0 2N3704 & 2N3705 2N3705 General Purpose , Current IEBO VEB = 3V, IC = 0 - Collector Emitter Saturation Voltage 2N3704 2N3705 2N3705 VCE , Frequency Emitter to Base Voltage DC Current Gain 2N3704 2N3705 2N3705 Unit V 0.1 uA - ... | Original |
3 pages, |
2N3705 2N3704 equivalent transistor 2n3704 2N3704 abstract |
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| Abstract: 2N3704 Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 , 3. Base Page 1 11/05/08 V1.1 2N3704 Bipolar Transistors Absolute Maximum Ratings Rating , IEBO VEB = 3V, IC = 0 - Collector Emitter Saturation Voltage 2N3704 VCE (sat)* IC = , Current Gain 2N3704 Unit V 0.6 V 1.0 *Pulse Test : Pulse Width = 300us, Duty Cycle = 2.0%. Page 2 11/05/08 V1.1 2N3704 Bipolar Transistors Electrical Characteristics (Ta = 25°C ... | Original |
4 pages, |
farnell 2N3704 2N3704 datasheet equivalent transistor 2n3704 2N3704 abstract |
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| Abstract: Continental Device India Limited An ISO/TS16949 ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N3704 2N3705 2N3705 NPN SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G , Data Sheet Unit mW/ºC ºC ºC/W Page 1 of 3 2N3704 2N3705 2N3705 ELECTRICAL CHARACTERISTICS , V EBO 5 - V 2N3704 hFE* 2N3705 2N3705 Collector Leakage Current VCB =20V, IE =0 Emitter Leakage Current VEB=3V, IC=0 Collector Emitter Saturation Voltage IC=100mA, IB =5mA 2N3704 2N3705 2N3705 ... | Original |
3 pages, |
equivalent transistor 2n3704 2N3705 2N3704 ISO/TS16949 ISO/TS16949 abstract |
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| Abstract: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package 2N3704 2N3705 2N3705 , /W Page 1 of 3 2N3704 2N3705 2N3705 ELECTRICAL CHARACTERISTICS (Ta=25 ºC unless otherwise , BV CEO* Max. Unit 30 - V BVCBO 50 - V V EBO 5 - V 2N3704 , Collector Emitter Saturation Voltage IC=100mA, IB =5mA 2N3704 2N3705 2N3705 Base Emitter on Voltage IC=100mA ... | Original |
3 pages, |
equivalent transistor 2n3704 2N3705 2N3704 datasheet abstract |
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| Abstract: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C , Corporation Max Units 2N3704 625 5.0 83.3 mW mW/°C °C/W 200 °C/W (continued , , VCE = 2.0 V, *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% 12 100 pF MHz 2N3704 ... | Original |
3 pages, |
PN100 equivalent transistor 2n3704 2N3704 2N3704 abstract |
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| Abstract: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C , Corporation Max Units 2N3704 625 5.0 83.3 mW mW/°C °C/W 200 °C/W (continued , , VCE = 2.0 V, *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% 12 100 pF MHz 2N3704 ... | Original |
4 pages, |
TO-92 Package Dimensions PN100 equivalent transistor 2n3704 2N3704 2N3704 abstract |
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| Abstract: ST 2N3704 NPN Silicon Epitaxial Planar Transistor for general purpose applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO , , Stock Code: 724) ® Dated : 02/04/2005 ST 2N3704 Characteristics at Tamb=25 Symbol Min. ... | Original |
2 pages, |
2N3704 equivalent transistor 2n3704 2N3704 abstract |
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| Abstract: ST 2N3704 NPN Silicon Epitaxial Planar Transistor for general purpose applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO , , Stock Code: 724) R Dated : 02/04/2005 ST 2N3704 Characteristics at Tamb=25 Symbol Min. ... | Original |
2 pages, |
equivalent transistor 2n3704 2N3704 2N3704 abstract |
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| Abstract: Discrete POWER & Signal I RI ¿J? H i L.D Technologies SEMICONDUCTOR ™ 2N3704 E ^ TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter , 2N3704 Pd Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C Rejc Thermal Resistance ... | OCR Scan |
2 pages, |
PN100 2N3704 2N3704 abstract |
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| Abstract: FAIRCHILD SEMICONDUCTOR tm 2N3704 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 PN100 for characteristics. Absolute Maximum Ratings* TA = 25° C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 30 V VcBO Collector-Base Voltage 50 V VEBO , Characteristic Max Units 2N3704 Pd Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C Rejc Thermal ... | OCR Scan |
2 pages, |
PN100 2N3704 2N3704 abstract |
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User Photos | 23/05/2012 | 6.64 Kb | JPG | 2n3704.jpg |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N3704 | N/A | Silicon NPN | |
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| 2N3704 | N/A | Medium Power, General Purpose | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 2N4400 | 2N4400TA Buy | 2N3704 Buy | Forward Holdings Ltd | Close | Small Signal | NPN General Purpose Amplifier |
| 2N4401 | 2N4401TAR Buy | 2N3704 Buy | Forward Holdings Ltd | Close | Small Signal | NPN General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| 2N4401G Buy | 2N3704 Buy | Forward International Electronics | Close |
| 2N4401RLRAG Buy | 2N3704 Buy | Forward International Electronics | Close |
| MPS2222AG Buy | 2N3704 Buy | Forward International Electronics | Close |
| MPS2222G Buy | 2N3704 Buy | Forward International Electronics | Close |
| MPS2222RLRPG Buy | 2N3704 Buy | Forward International Electronics | Close |
| PN2222AG Buy | 2N3704 Buy | Forward International Electronics | Close |
| PN2222ARLRMG Buy | 2N3704 Buy | Forward International Electronics | Close |
| PN2222ARLRPG Buy | 2N3704 Buy | Forward International Electronics | Close |
| Part | Similar Part | Notes |
| 2N3704 Buy | 2N3414 Buy | |
| 2N3704 Buy | 2N3415 Buy | |
| 2N3704 Buy | 2N3416 Buy | |
| 2N3704 Buy | 2N3417 Buy | |
| 2N3704 Buy | 2N3706 Buy | |
| 2N3704 Buy | 2N4424 Buy | |
| 2N3704 Buy | 2N5418 Buy | |
| 2N3704 Buy | 2N5419 Buy | |
| 2N3704 Buy | 2N5420 Buy | |
| 2N3704 Buy | 2N5449 Buy |