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2n3055 circuit

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2N3055

Abstract: 2N3055 power circuit 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V
American Microsemiconductor
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2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit STV3208 LM3909N LM3909 1N4510 2N1711

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2N3055 typical applications 2N3055 MJ2955 mj2955 transistor 204AA 2N3055/D

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , . (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150Â
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES
Motorola
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2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 pin out TRANSISTOR 2n3055

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055, MJ2955
ON Semiconductor
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2n3055 equal 2N3055 JAPAN DC variable power with 2n3055 MJ2955 mexico 2N3055-1 value of 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3 2N3055 transistor equivalent

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055/D 2N3055(NPN , ) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC , *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20
ON Semiconductor
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OF transistor 2n3055 to-3 package 2N3055H 2N30

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES
Motorola
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2N3055-D 2n3055 pnp hfe 2n3055

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are , Region Safe Operating Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 TJ = 150
ON Semiconductor
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pnp transistor 2N3055 power transistor 2n3055

2N3055 power amplifier circuit

Abstract: 2n3055 motorola MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. (2N3055) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15 120 - fhfe 10 - kHz 2N3055, MJ2955 There are two limitations on the power , Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955
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TRANSISTOR 2n3055 TRANSISTOR MJ2955 J2955

2n3055 motorola

Abstract: L 3055 motorola recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 , id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR , 2N3055 MJ2955 PACKAGE DIMENSIONS NOTES; 1. DIMENSIONING AND TOLERANCING PER ANSI t l = f c l U-D , , nor does Motorola assume any liability arising out of the application or use of any product or circuit
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L 3055 motorola motorola 2n3055 motorola power transistor 2N3055 J 2N3055

M8149

Abstract: 2N4355 2N670 2N670 1.016 1.690 .953 .812 .844 .844 1.375 Printed circuit Open Frame D C 2 , 2N3054 2N3055 1.25DX.75H-0.140Cl Hole .875D x .531H Molded Toroid P.C. MoldedToroid B E , 15 15 2000 2000 20k 20k 2N3055 2N3055 1.25DX.75H- 0.140 Cl Hole 1.25D x .75H-
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M8149 M8050 M8072 M8121 2N1305 2N414 2N4355 Microtran M8149 Transformer M8050 tamura m8050 transformer M8073 M8074 M8092
Abstract: . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , derated for temperature according to Figure 1. 20 2N3055, MJ2955 , * Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v 2.0 , Characteristic ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 2N3055 MJ2955 2N3055 Motorola
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2N3055 power amplifier circuit

Abstract: 40636 POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit Output Transistors Class B Driver Class B Pre-Driver M_p_KJ â  Class A Pre-Driver 16Q 4n (8Q Imped. ) N-P-N , (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320 , used in the stage. Type numbers in parentheses indicate the transistor-family designation. 2N3055 , 2N3055* 115-W Hometaxial-Base, General Purpose 60 70 90 20-70 4 4 5 30 100 1.1 4 0.4 1.8 4 2N6254 150
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2N5495 2N2102 2N5492 2N6103 2N3439 2N4063 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N6269 2N4036 2N6386 TA8201

RCA 40636 transistor

Abstract: rca 40636 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , - -4-A VERSAWATT TO-220) File No.676 2N3055 VCER(SUSI - 70 V lc- 12 A (TO-31 File No. 524 2N6247 , 2N3055 VCER(SUS) - 70 V lc«6A (TO-31 524 2N5955 Vcer(SUS)-65V lc - â'"6 A (TO-66) 675 â'¢ Or higher , Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit
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RCA 40636 transistor rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 220v 300w ac regulator circuit ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5786

3000 watt audio circuit diagram

Abstract: transistor oscillator circuit 2n3055 "The 2N3055 and the 2SK135 should both be heatsunk - the FET has a source to case connection, so can be bolted straight down, but the 2N3055 must be insulated with the usual mica washer, and plastic , . "Hope this inspires some construction!" Thanks for sharing the circuit, guys! update: note this , you've wound it, but I'd like to try the circuit out of curiosity. Does the bifilar winding only extend , , with one wound over the other. > I breadboarded your filter/compressor circuit and I like it
Medium Wave Alliance
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3000 watt audio circuit diagram transistor oscillator circuit 2n3055 2n3055 audio output circuit 2sk135 application note 2N3055 pin out connections 2N3055 connections 2SK413

2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram current limiting functions, programmable and fixed . Figure 9. Programmable current limiting circuit , , protects against load short-circuits and limits the power dissipation. The foldback circuit starts to , Figure 13. Inhibit Circuit. INH 3 VREF THIS OUTPUT DISABLE ALL THE BLOCKS EXCEPT VREF VIN , PG signal can be used to initialise the operation of a µP. The circuit, see fig 17, is realised by a , max. at Tj =125°C. Figure 17. Power Good Circuit. ADJ + - 0.9 VREF E/A + 6 -
STMicroelectronics
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2N3055 transistor equivalent to220 12v 10A car battery charger wiring diagram 2N3055 equivalent mosfet smd transistor 2N3055 2n3055 use in battery charger equivalent transistor 2n3055 AN932 L4955

texas 2n3055

Abstract: BU108 Operating Area 2N3055 * PNP MJ2955* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2N3055 MJ2955 2N3055, MJ2955 , Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 , performed w/special application simulator circuit. See data sheet for details. Devices listed in bold , performed w/special application simulator circuit. See data sheet for details. (7)V CEO = 375 V (8)When 2
Motorola
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texas 2n3055 BU108 2N5655 equivalent 2n3055 replacement BU100 BDX54 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011

circuit diagram of 2N3055 series voltage regulator

Abstract: 2N3055 diagram with power supply '¢ THERMAL OVERLOAD PROTECTION â'¢ SHORT CIRCUIT PROTECTION â'¢ OUTPUT TRANSISTOR SOA PROTECTION The L7900 , 1.1 1.1 1.1 V lsc Short circuit current 1.3 1 .1 0.9 1.1 A lSCP Short circ. peak current Tj= 25 , (1IM4001 or similar) should be introduced to protect the device from momentary input short circuit. Fig. 2 - Split power supply (± 15V/1 A) ainst potential latch-up problems. Fig. 3 - Circuit for , . Fig. 4 - High current negative regulator (-5V/4A with 5A current limiting) °-2 n 2N3055 Fig. 5 -
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L7800 circuit diagram of 2N3055 series voltage regulator 2N3055 diagram with power supply 2N3055 series voltage regulator 2N3055 TO-220 N2N3055 2N3055 TRANSISTOR L7900AC T0-220 L7952AC
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