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JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy

2n3055 25

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2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction , DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1 , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA 2N3055/D

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , PTOT Total dissipation at Tc 25°C Tstg Storage temperature TJ Note: 2/7 Max
STMicroelectronics
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2n3055 malaysia 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2n3055 audio amplifier

RCA-2N3055

Abstract: rca 2n3055 ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 , operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide , .115 W (Tc-25° C) Derate Linearly above 25° C , General-Purpose Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unless Otherwise Specified TEST CONDITIONS VOLTAGE CURRENT A dc Vdc V ce IcEX Ic e x . V
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RCA-2N3055 KCS-27516 rca 2n3055 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator 2n3055 RCA data TQ-204AA/TO-3

2N3055

Abstract: DC variable power with 2n3055 Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO
ON Semiconductor
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DC variable power with 2n3055 power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Code = Year = Work Week = Country of Orgin 60 ORDERING INFORMATION 40 Device 0 25 , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , , Junctionâ'toâ'Case Max 1.52 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C TJ, Tstg ­ 65 , 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î
Motorola
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2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 pin out TRANSISTOR 2n3055

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 , 120 100 80 60 40 20 0 PD, POWER DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN MJ2955 mexico 2N3055-1 value of 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 Watts W/°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 TRANSISTOR 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3

2N3055

Abstract: hfe 2n3055 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , 115 W -65 to 200 °C 200 °C PTOT Total dissipation at Tc 25°C Tstg Storage
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JESD97 0015923C hfe 2n3055 2n3055 25 2n3055 pnp general purpose 2n3055 transistors 2n3055 IC

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Collector Current IB Base Current P tot T stg Tj Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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pnp transistor 2N3055 complementary npn-pnp complementary npn-pnp power transistors Mj2955 power transistor P003F

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , = 25°C Derate above 25°C PD 115 0.657 ­ 65 to + 200 °C Symbol Max Unit , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Techniques Reference Manual, SOLDERRM/D. 20 0 0 25 50 75 100 125 150 175 200
ON Semiconductor
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OF transistor 2n3055 to-3 package 2N30

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , Continuous Base Current 15 7 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , 100 Units / Tray 100 Units / Tray PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , Total Power Dissipation at TC = 25°C Derate above 25°C PD 115 0.657 W W/°C TJ, TSTG , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics
Multicomp
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2n3055 collector characteristic curve transistor 2N3055 npn 2n3055 2n3055 pin Transistor MJ2955

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Base Current IB 7 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 , 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted
Motorola
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2N3055-D

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ , ORDERING INFORMATION 40 Device 0 25 50 75 100 125 150 200 100 Units / Tray , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON Semiconductor
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2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , 25 50 75 100 125 150 175 200 Tc, TEMPERATURE^) K E PIN 1.BASE 2.EMITTER COLLECTOR(CASE , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , , VCE = 10 V , f = 1.0 MHz) 2.5 MHz Small-Signal Current Gain (lc = 1.0 A, VCE = 4.0 V, f = 1 KHz , = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit
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2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , Dissipation at T c 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature 15 , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case
STMicroelectronics
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2N3055 specification J 2N3055 t 2N3055

2N3055

Abstract: 2n3055 pin Product Specification 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power Transistors , 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c , =0.5A ; VCE=10V 2.5 MHz Is/b fT 2 70 SavantIC Semiconductor Product Specification , ) 3 2N3055 SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power
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2n3055 datasheet 2n3055 complement 2N3055 silicon 2N3055 equivalent datasheet 2n3055

2n3055

Abstract: hfe 2n3055 www.jmnic.com 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , =10V 2.5 MHz Is/b fT 2 70 Product Specification www.jmnic.com 2N3055 Silicon NPN , Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors DESCRIPTION , Tstg Storage temperature -65~200 VALUE UNIT 1.52 /W TC=25 THERMAL , Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors 4 JMnic
JMnic
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2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. (2N3055) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary , Current Total Power Dissipation @ T q = 25°C Derate above 25 °C O perating and Storage Junction , , Junction to Case Symbol R e jc Max 1.52 Unit °C /W 0 25 50 75 100 125 150
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J2955
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