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Part Manufacturer Description Datasheet BUY
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil
HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
HFA3096B96 Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC visit Intersil
TL16PNP100AFNR Texas Instruments Standalone PnP Controller, Supports Two Logical Devices 44-PLCC 0 to 70 visit Texas Instruments

2X PNP TRANSistors

Catalog Datasheet MFG & Type PDF Document Tags

transistor 3904

Abstract: transistor 2222a 2x 2x 1x 1x 2x 2x 1x 1x 2222A NPN Transistors 2907A PNP Transistors 2222A NPN Transistor and 2907A PNP Transistor 3904 NPN Transistors 3906 PNP Transistors 3904 NPN Transistor and 3906 PNP Transistor , 2x 2x 1x 1x 2x 2x 1x 1x 2x 2x 1x 1x 2222A NPN Transistors 2907A PNP Transistors 2222A NPN , High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide , PNP Transistors 1 x 2222A NPN Transistor and 1 x 2907A PNP Transistor 2 x 3904 NPN Transistors 2 x
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ZX6T9M522

Abstract: SOT23 MARK PD Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO V ZX6TDNE6 ZX6TD9E6 2x NPN 2x PNP 9 -9 IC A 4.5 -4.5 PD W 1.1 1.1 hFE Min 500 500 VCE(sat) at IC 0.2 , Transistors in DPAK Part Polarity VCEO V ZX6TCK ZX6T6K NPN PNP 50 -60 IC A 8 -7.5 PD W 3.0 3.0 , Generation 6 Mixed Polarity Dual Transistors in SOT23-6 Part Polarity VCEO V ZX6TDN9E6 ZX6TDB2E6 ZX6TDC3E6 NPN PNP NPN PNP NPN PNP 9 -9 20 -20 50 -50 IC A 4.5 -4.5 4.5 -3.5 4 -3 PD W 1.1 1.1 1.1 1.1
Zetex Semiconductors
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TO-202 transistor

Abstract: consisting of vertical NPN and PNP transistors, fixed and programmable capacitors, and implanted boron , values of 4.5 GHz for the NPN and 3.75 GHz for the PNP transistors (V c e = 6 V and IC = 3 mA) and highcurrent drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are unique to these , PNP Qty 2 92 24 14 4 2 52 24 4 4 Scale 2X 6X 12X 30X 90X 2X 6X 12X 30X 90X , PU9A4A01 Resistors* NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP 2X 6X 12X 30X 90X 2X 6X
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TO-202 transistor ALA201/202 ALA201 52AL040420 D-8043 DS91-029LBC DS89-092LBC
Abstract: vertical NPN and PNP transistors, fixed and programmable capacitors, and implanted boron resistors , for the NPN and 3.75 GHz for the PNP transistors (Vce = 6 V and IC = 3 mA) and high-current drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are unique to these linear arrays. The , be matching of adjacent transistors of the same type is within ± 1 .0 mV. Table 2. PNP dc , PU3A2A01 PU9A4A01 Resistors* NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP Value 2X 6X 12X 30X 90X 2X 6X -
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ALA202 NU321A01 PU322A01 PU342A01 PU342A NU3A2A01

ALA201

Abstract: 6x transistor integrated circuits consisting of vertical NPN and PNP transistors, fixed and programmable capacitors, and , . Peak fT values of 4.5 GHz for the NPN and 3.75 GHz for the PNP transistors (Vce = 6 V and ic = 3 mA) and high-current drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are , 30X 0.05 10.0 3.0 15.0 15.0) NU9A3A01 NPN 9 4 90X 0.15 30.0 9.0 45.0 45.01 RU121A01 PNP 1 2 2X 0.01 , Scale Qty Standard Input Power Tile Tile Tile Transistors NU121A01 NPN 2X 2 â'" 2 â
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6x transistor npn 8 transistor array PNP UHF transistor NU341A01 ALY-2 6 "transistor arrays" ic
Abstract: fî of 350 MHz for NPN and 300 MHz for PNP transistors 30 volt capability Low development costs , SemiCustom Linear Array brochure. Features Complementary vertical NPN and PNP transistors Two-level , is guaran teed for both transistors. Typical peak fr of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors are unique for 1 Figure 1. LA400 , NPN and vertical PNP tran sistors. CBIC technology offers the advantage of designing highperformance -
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50AL203140 DS86-352LBC

PNP 2N3904

Abstract: 2N3906 Quad Transistors* TO-116 Case (14PinDip) Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO , 20 45 300 10 0.50 10 8.0 50 2.0 4X 2N2484 A MPQ2907 PNP , ; B A A MPQ3467 PNP CORE DRIVER 40 40 5.0 200 30 20 500 0.50 500 , 5.0 500 40 30 500 0.45 500 10 200 50 4X 2N3725A MPQ3762 PNP CORE , 250 130 4X 2N3904 A B MPQ3906 PNP AMPUSWITCH NPN/PNP AMPL/SWITCH NPN/PNP LOW NOISE NPN
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2N2222 2N3906 PNP 2N3904 2N2222 pnp MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483

PIN CONFIGURATION 2N2222

Abstract: 2n2222 pin Quad Transistors* TO-116 Case (14 Pin Dip) T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE , 50 2.0 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 100 4X 2N2907 B MPQ3467 PNP CORE DRIVER 40 40 5.0 , 4X 2N3725A A MPQ3762 PNP CORE DRIVER 40 40 5.0 100 30 20 1,000 0.55 , 75 10 0.20 10 4.0 250 130 4X 2N3904 A MPQ3906 PNP AMPL/SWITCH NPN/PNP
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PIN CONFIGURATION 2N2222 2n2222 pin MPQ2484 2N3467 MPQ3725 2N3725 MPQ3725A 2N3762

2N2222 pnp

Abstract: 2X PNP TRANSistors mpq6002 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 C mpq6100a NPN/PNP LOW NOISE 60 45 5.0 10 50 125 10 0.25 1.0 4.0 50 4.0 2X 2N2484 + 2X 2N3799 C mpq6502 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 225 2X 2N2222 + 2X 2N2907 D mpû6700 NPN/PNP , 250 180 25 30 0.70 20 6.0 50 - 2X MPSA42+ 2X MPSA92 D mpq7093 PNP HIGH VOLTAGE 250 250 5.0 250 180 , Quad Transistors* ^^ TO-116 Case (14 Pin Dip) Tq(@ 25°C)=3.0Watts Total (4 Die Equal Power
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2X PNP TRANSistors MP03906 2n3904 225 2N3906D 2N2222 dip 2N2222 2n3904 DDG1S03
Abstract: NPN and vertical PNP transistors. CBIC technology offers the advantage of designing high-performance , guaranteed for both transistors. Typical peak f r of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors are unique for these linear arrays. Current , 350 MHz for NPN and 300 MHz for PNP transistors â  Complementary vertical NPN and PNP transistors , PNP 1X 70 5 PNP 2X 12 1 â'" PNP 3X 14 1 â'" PNP Resistors -
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ALA400/401 ALA400 ALA401

PNP 2N3904

Abstract: 2N3906 Quad Transistors* TO-116 Case (14 Pin Dip) T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE , 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 100 4X 2N2907 B MPQ3467 PNP CORE DRIVER 40 40 5.0 200 , 4X 2N3725A A MPQ3762 PNP CORE DRIVER 40 40 5.0 100 30 20 1,000 0.55 , 75 10 0.20 10 4.0 250 130 4X 2N3904 A MPQ3906 PNP AMPL/SWITCH NPN/PNP
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MPQ3904 MPQ6002 MPQ6100A MPQ6502 MPQ6700 MPQ7043
Abstract: ) process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers , collector-to-emitter reverse breakdown voltage of 33 volts is guaranteed for both transistors. Typical peak fT of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors , transistors â  Complementary vertical NPN and PNP transistors â  33 volt capability â  Two-level , 1X 70 5 5 â'" PNP 2X 12 1 â'" â'" PNP 3X 14 1 â'" 2 -
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51AL230240 D-8000 DS87-61LBC

2N3906

Abstract: 2N3904 NPN dip Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE , SWITCH NPN LOW NOISE NPN LOW NOISE PNP AMPL/SWITCH PNP AMPL/SWITCH PNP CORE DRIVER NPN CORE DRIVER NPN CORE DRIVER PNP CORE DRIVER PNP LOW NOISE PNP LOW NOISE NPN AMPL/SWITCH PNP AMPL/SWITCH NPN/PNP AMPL , 2N3467 4X 2N3725 4X 2N3725A 4X 2N3762 4X2N3798 4X2N3799 4X 2N3904 4X 2N3906 2X 2N2222 + 2X 2N2907 2X 2N2484 + 2X 2N3799 2X 2N2222 + 2X 2N2907 2X 2N3904 + 2X 2N3906 4X MPSA42 2X MPSA42 + 2X MPSA92 4X MPSA92
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2N3904 NPN dip 2N2222 hfe MPQ2222A MPQ2907A MPQ3798 MPQ3799 4X2N222A 4X2N2907A

2n222a

Abstract: 2n222a datasheet 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 C MPQ6100A NPN/PNP LOW NOISE , 8.0 200 - 225 2X 2N2222 + 2X 2N2907 D MPQ6700 NPN/PNP AMPL/SWITCH 40 40 , 25 30 0.70 20 6.0 50 - - 2X MPSA42 + 2X MPSA92 D MPQ7093 PNP HIGH , Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE , - 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300
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MPQ7053 2n222a 2n222a datasheet 2n222a npn 2N2907 equivalent 2X PNP 2N222A 2N2907A

PIN CONFIGURATION 2N2222

Abstract: 2N2907 NPN Transistor 3906 B mpq6002 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 a.o 200 - 225 2X 2N2222 + 2X 2N2907 C mpq6100a NPN/PNP LOW NOISE 60 45 5.0 10 50 125 10 0.25 1.0 4.0 50 4.0 - 2X 2N2484 + 2X 2N3799 C mpq6s02 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 D mpq6700 NPN/PNP AMPL/SWITCH 40 40 5.0 50 30 70 10 0.25 10 4.5 200 - 150 2X 2N3904 + 2X 2N3906 D mpq7043 , VOLTAGE 250 250 5.0 250 180 25 30 0.70 20 6.0 50 - - 2X MPSA42+ 2X MPSA92 D mpq7c93 PNP HIGH VOLTAGE 250
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2N2907 NPN Transistor 2N3799 DIP transistor 2n2222 2N2222 die 2n2222 transistor 2n3904 npn

op amp 741 model PSpice

Abstract: pnp transistor 3609 MACROCHIP COMPONENTS Small NPN Transistors 1X, 2X All Macrochips contain large numbers of small geometry , restricted to about 0.8W (depending on package type). Lateral PNP Transistors Lateral PNP transistors are , PNP transistors with two collectors which effectively doubles their usefulness in circuits such as , provide a combination of NPN transistors, PNP transistors, a pinch resistor and a total of 30.6KQ value of , connection is the normal collector contact. _ Lateral PNP Transistors F All array cells and peripheral
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op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor DN660 MM-10004 492KQ 69X81 89X81 1080K 602858F PS2314

chip die npn transistor

Abstract: MM1007 Small NPN Transistors 1X, 2X Diffused Resistors All Macrochips contain large numbers of small , (depending on package type). Lateral PNP Transistors Lateral PNP transistors are provided on all , contain identical array cells which provide a combination of NPN transis­ tors, PNP transistors, a pinch , . Lateral PNP Transistors F o o All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts into a single
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chip die npn transistor MM1007 69X56
Abstract: Small NPN Transistors IX, 2X Diffused Resistors All Macrochips contain large numbers of small , (depending on package type). Lateral PNP Transistors Lateral PNP transistors are provided on all , cells which provide a combination of NPN transis­ tors, PNP transistors, a pinch resistor and a total , PNP Transistors F o ol All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts info a single -
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m 923

Abstract: CET3904 PRODUCT announcement Tiny Low VCE(SAT) Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices soT-923 soT-883l available Bottom , Converters · Voltage Clamping · Protection Circuits description The CET3904E (NPN), CET3906E (PNP), CMBT3904E (NPN), and CMBT3906E (PNP), are Low VCE(SAT) transistors designed for applications where energy , suitable for the most demanding size constrained applications. selection guide Low VCE(SAT) Transistors
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CMNT3906E m 923 CET3904 sot-883 3904 SOT 3904 sot-923 T-923 T-883

3906 PNP

Abstract: m 923 PRODUCT announcement Tiny Low VCE(SAT) Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices SOT-923 SOT-883L available Bottom , Converters · Voltage Clamping · Protection Circuits description The CET3904E (NPN), CET3906E (PNP), CMBT3904E (NPN), and CMBT3906E (PNP), are Low VCE(SAT) transistors designed for applications where energy , suitable for the most demanding size constrained applications. selection guide Low VCE(SAT) Transistors
Central Semiconductor
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3906 PNP on semiconductor marking code sot transistor 3904 npn datasheet 3904 NPN r 923 SOT-883L
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