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2X PNP TRANSistors

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Abstract: 2x 2x 1x 1x 2x 2x 1x 1x 2222A NPN Transistors 2907A PNP Transistors 2222A NPN Transistor and 2907A PNP Transistor 3904 NPN Transistors 3906 PNP Transistors 3904 NPN Transistor and 3906 PNP Transistor , 2x 2x 1x 1x 2x 2x 1x 1x 2x 2x 1x 1x 2222A NPN Transistors 2907A PNP Transistors 2222A NPN , High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide , PNP Transistors 1 x 2222A NPN Transistor and 1 x 2907A PNP Transistor 2 x 3904 NPN Transistors 2 x -
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transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v CMPT491E CMPT591E CMPTA46 CMPTA96 CZTA46 CZTA96
Abstract: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO V ZX6TDNE6 ZX6TD9E6 2x NPN 2x PNP 9 -9 IC A 4.5 -4.5 PD W 1.1 1.1 hFE Min 500 500 VCE(sat) at IC 0.2 , Transistors in DPAK Part Polarity VCEO V ZX6TCK ZX6T6K NPN PNP 50 -60 IC A 8 -7.5 PD W 3.0 3.0 , Generation 6 Mixed Polarity Dual Transistors in SOT23-6 Part Polarity VCEO V ZX6TDN9E6 ZX6TDB2E6 ZX6TDC3E6 NPN PNP NPN PNP NPN PNP 9 -9 20 -20 50 -50 IC A 4.5 -4.5 4.5 -3.5 4 -3 PD W 1.1 1.1 1.1 1.1 Zetex Semiconductors
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ZX6T9M522 SOT23 MARK PD sot236 651 MLP522 ZX6TNM522 ZX6TAM522 ZX6TBM522 ZX6TCM522 ZX6TJM522
Abstract: consisting of vertical NPN and PNP transistors, fixed and programmable capacitors, and implanted boron , values of 4.5 GHz for the NPN and 3.75 GHz for the PNP transistors (V c e = 6 V and IC = 3 mA) and highcurrent drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are unique to these , PNP Qty 2 92 24 14 4 2 52 24 4 4 Scale 2X 6X 12X 30X 90X 2X 6X 12X 30X 90X , PU9A4A01 Resistors* NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP 2X 6X 12X 30X 90X 2X 6X -
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TO-202 transistor ALA201/202 ALA201 52AL040420 D-8043 DS91-029LBC DS89-092LBC
Abstract: vertical NPN and PNP transistors, fixed and programmable capacitors, and implanted boron resistors , for the NPN and 3.75 GHz for the PNP transistors (Vce = 6 V and IC = 3 mA) and high-current drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are unique to these linear arrays. The , be matching of adjacent transistors of the same type is within ± 1 .0 mV. Table 2. PNP dc , PU3A2A01 PU9A4A01 Resistors* NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP Value 2X 6X 12X 30X 90X 2X 6X -
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ALA202 NU321A01 PU322A01 PU342A01 PU342A NU3A2A01
Abstract: integrated circuits consisting of vertical NPN and PNP transistors, fixed and programmable capacitors, and , . Peak fT values of 4.5 GHz for the NPN and 3.75 GHz for the PNP transistors (Vce = 6 V and ic = 3 mA) and high-current drive capability (8 mA for the NPN 321A01 6X and PNP 322A01 6X transistors) are , 30X 0.05 10.0 3.0 15.0 15.0) NU9A3A01 NPN 9 4 90X 0.15 30.0 9.0 45.0 45.01 RU121A01 PNP 1 2 2X 0.01 , Scale Qty Standard Input Power Tile Tile Tile Transistors NU121A01 NPN 2X 2 â'" 2 â -
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6x transistor 6 "transistor arrays" ic PNP UHF transistor pnp 8 transistor array NU341A01 Nu12
Abstract: fî of 350 MHz for NPN and 300 MHz for PNP transistors 30 volt capability Low development costs , SemiCustom Linear Array brochure. Features Complementary vertical NPN and PNP transistors Two-level , is guaran teed for both transistors. Typical peak fr of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors are unique for 1 Figure 1. LA400 , NPN and vertical PNP tran sistors. CBIC technology offers the advantage of designing highperformance -
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50AL203140 DS86-352LBC
Abstract: Quad Transistors* TO-116 Case (14PinDip) Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO , 20 45 300 10 0.50 10 8.0 50 2.0 4X 2N2484 A MPQ2907 PNP , ; B A A MPQ3467 PNP CORE DRIVER 40 40 5.0 200 30 20 500 0.50 500 , 5.0 500 40 30 500 0.45 500 10 200 50 4X 2N3725A MPQ3762 PNP CORE , 250 130 4X 2N3904 A B MPQ3906 PNP AMPUSWITCH NPN/PNP AMPL/SWITCH NPN/PNP LOW NOISE NPN -
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2N2222 2N3906 PNP 2N3904 2N2222 pnp MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483
Abstract: Quad Transistors* TO-116 Case (14 Pin Dip) T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE , 50 2.0 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 100 4X 2N2907 B MPQ3467 PNP CORE DRIVER 40 40 5.0 , 4X 2N3725A A MPQ3762 PNP CORE DRIVER 40 40 5.0 100 30 20 1,000 0.55 , 75 10 0.20 10 4.0 250 130 4X 2N3904 A MPQ3906 PNP AMPL/SWITCH NPN/PNP -
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PIN CONFIGURATION 2N2222 2n2222 pin MPQ2484 2N3467 MPQ3725 2N3725 MPQ3725A 2N3762
Abstract: mpq6002 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 C mpq6100a NPN/PNP LOW NOISE 60 45 5.0 10 50 125 10 0.25 1.0 4.0 50 4.0 2X 2N2484 + 2X 2N3799 C mpq6502 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 225 2X 2N2222 + 2X 2N2907 D mpû6700 NPN/PNP , 250 180 25 30 0.70 20 6.0 50 - 2X MPSA42+ 2X MPSA92 D mpq7093 PNP HIGH VOLTAGE 250 250 5.0 250 180 , Quad Transistors* ^^ TO-116 Case (14 Pin Dip) Tq(@ 25°C)=3.0Watts Total (4 Die Equal Power -
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2n3904 225 MP03906 2N3906D 2N2222 dip 2N2222 die DDG1S03
Abstract: NPN and vertical PNP transistors. CBIC technology offers the advantage of designing high-performance , guaranteed for both transistors. Typical peak f r of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors are unique for these linear arrays. Current , 350 MHz for NPN and 300 MHz for PNP transistors â  Complementary vertical NPN and PNP transistors , PNP 1X 70 5 PNP 2X 12 1 â'" PNP 3X 14 1 â'" PNP Resistors -
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ALA400/401 ALA400 ALA401
Abstract: Quad Transistors* TO-116 Case (14 Pin Dip) T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE , 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 100 4X 2N2907 B MPQ3467 PNP CORE DRIVER 40 40 5.0 200 , 4X 2N3725A A MPQ3762 PNP CORE DRIVER 40 40 5.0 100 30 20 1,000 0.55 , 75 10 0.20 10 4.0 250 130 4X 2N3904 A MPQ3906 PNP AMPL/SWITCH NPN/PNP -
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MPQ3904 MPQ6002 MPQ6100A MPQ6502 MPQ6700 MPQ7043
Abstract: ) process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers , collector-to-emitter reverse breakdown voltage of 33 volts is guaranteed for both transistors. Typical peak fT of 350 MHz for NPN and 300 MHz for PNP transistors and 2 mA current drive capability for the 1 X transistors , transistors â  Complementary vertical NPN and PNP transistors â  33 volt capability â  Two-level , 1X 70 5 5 â'" PNP 2X 12 1 â'" â'" PNP 3X 14 1 â'" 2 -
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51AL230240 D-8000 DS87-61LBC
Abstract: Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE , SWITCH NPN LOW NOISE NPN LOW NOISE PNP AMPL/SWITCH PNP AMPL/SWITCH PNP CORE DRIVER NPN CORE DRIVER NPN CORE DRIVER PNP CORE DRIVER PNP LOW NOISE PNP LOW NOISE NPN AMPL/SWITCH PNP AMPL/SWITCH NPN/PNP AMPL , 2N3467 4X 2N3725 4X 2N3725A 4X 2N3762 4X2N3798 4X2N3799 4X 2N3904 4X 2N3906 2X 2N2222 + 2X 2N2907 2X 2N2484 + 2X 2N3799 2X 2N2222 + 2X 2N2907 2X 2N3904 + 2X 2N3906 4X MPSA42 2X MPSA42 + 2X MPSA92 4X MPSA92 Central Semiconductor
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2N2222 hfe 2N3904 NPN dip MPQ2222A MPQ2907A MPQ3798 MPQ3799 4X2N222A 4X2N2907A
Abstract: 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 C MPQ6100A NPN/PNP LOW NOISE , 8.0 200 - 225 2X 2N2222 + 2X 2N2907 D MPQ6700 NPN/PNP AMPL/SWITCH 40 40 , 25 30 0.70 20 6.0 50 - - 2X MPSA42 + 2X MPSA92 D MPQ7093 PNP HIGH , Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE , - 4X 2N2484 A MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 Central Semiconductor
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MPQ7053 2n222a 2n222a datasheet 2n222a npn 2X PNP 2N2907 equivalent 2N222A 2N2907A
Abstract: 3906 B mpq6002 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 a.o 200 - 225 2X 2N2222 + 2X 2N2907 C mpq6100a NPN/PNP LOW NOISE 60 45 5.0 10 50 125 10 0.25 1.0 4.0 50 4.0 - 2X 2N2484 + 2X 2N3799 C mpq6s02 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150 8.0 200 - 225 2X 2N2222 + 2X 2N2907 D mpq6700 NPN/PNP AMPL/SWITCH 40 40 5.0 50 30 70 10 0.25 10 4.5 200 - 150 2X 2N3904 + 2X 2N3906 D mpq7043 , VOLTAGE 250 250 5.0 250 180 25 30 0.70 20 6.0 50 - - 2X MPSA42+ 2X MPSA92 D mpq7c93 PNP HIGH VOLTAGE 250 -
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2N2907 NPN Transistor transistor 2n2222 2N3799 DIP NPN transistor 2n 3906 2n3904 npn J 2N2369
Abstract: MACROCHIP COMPONENTS Small NPN Transistors 1X, 2X All Macrochips contain large numbers of small geometry , restricted to about 0.8W (depending on package type). Lateral PNP Transistors Lateral PNP transistors are , PNP transistors with two collectors which effectively doubles their usefulness in circuits such as , provide a combination of NPN transistors, PNP transistors, a pinch resistor and a total of 30.6KQ value of , connection is the normal collector contact. _ Lateral PNP Transistors F All array cells and peripheral -
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op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 me 4946 492KQ 69X81 89X81 1080K 602858F PS2314
Abstract: Small NPN Transistors 1X, 2X Diffused Resistors All Macrochips contain large numbers of small , (depending on package type). Lateral PNP Transistors Lateral PNP transistors are provided on all , contain identical array cells which provide a combination of NPN transis­ tors, PNP transistors, a pinch , . Lateral PNP Transistors F o o All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts into a single -
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chip die npn transistor MM1007 69X56
Abstract: Small NPN Transistors IX, 2X Diffused Resistors All Macrochips contain large numbers of small , (depending on package type). Lateral PNP Transistors Lateral PNP transistors are provided on all , cells which provide a combination of NPN transis­ tors, PNP transistors, a pinch resistor and a total , PNP Transistors F o ol All array cells and peripheral areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact, two base contacts info a single -
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Abstract: PRODUCT announcement Tiny Low VCE(SAT) Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices soT-923 soT-883l available Bottom , Converters · Voltage Clamping · Protection Circuits description The CET3904E (NPN), CET3906E (PNP), CMBT3904E (NPN), and CMBT3906E (PNP), are Low VCE(SAT) transistors designed for applications where energy , suitable for the most demanding size constrained applications. selection guide Low VCE(SAT) Transistors Central Semiconductor
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CMNT3906E m 923 3904 SOT 3904 sot-923 CET3904 laptop ic list T-923 T-883
Abstract: PRODUCT announcement Tiny Low VCE(SAT) Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices SOT-923 SOT-883L available Bottom , Converters · Voltage Clamping · Protection Circuits description The CET3904E (NPN), CET3906E (PNP), CMBT3904E (NPN), and CMBT3906E (PNP), are Low VCE(SAT) transistors designed for applications where energy , suitable for the most demanding size constrained applications. selection guide Low VCE(SAT) Transistors Central Semiconductor
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transistor 3904 npn datasheet on semiconductor marking code sot 3906 PNP r 923 SOT-883L SOT-923
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