NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK810 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SK810 | N/A | FET Data Book |
2 pages, |
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| 2SK810 | NEC Electronics | Semiconductor Selection Guide 1995 |
226 pages, |
Original | |
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| 2SK810 | NEC Electronics | Fast switching N-channel silicon MOS field effect power transistor. |
4 pages, |
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| 2SK811 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SK811 | N/A | FET Data Book |
2 pages, |
Scan | |
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| 2SK811 | N/A |
2 pages, |
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| 2SK811 | NEC Electronics | Semiconductor Selection Guide 1995 |
226 pages, |
Original | |
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| 2SK811 | NEC Electronics | Fast switching N-channel silicon MOS field effect power transistor. |
4 pages, |
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| 2SK812 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MP2560 10 1 1 4 1 0.3 0.5 2SK814 MP-45 MP-45 30 � � 35 10 8.0 6 4 ... | Original |
12 pages, |
2sk611 2SK2053 2SK505 2SK2358 equivalent transistor 2sk transistor 2sk162 2SK104 2SK518 2SK163 2SK2485 2sk739 equivalent 2sk2136 2SK2234 HF 8311 2SK104 abstract |
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| Abstract: UPA54HA 1S2192 2sk520 UPA64HA UPA67C 2SH24 2SC5664 2sh25 n13t1 2sk2500 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 C11178JJCV0IF0012 C11178JJCV0IF0012 April 2005 NS CP(N) © NEC Electronics Corporati ... | Original |
76 pages, |
UPC1308V UPD6360C UPC1037H NEC 2SK2500 upc804c UPD65031 uPD5201G UPD65042 UPC648C UPC1037HA datasheet abstract |
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| Abstract: 6427525 NEC ELECTRONICS INC 98D 18986 D . Tfl M|b4S7525 OOlfi^flb b "J" PRELIMINARY SPECIFICATION MOS FIELD EFFECT TRANSISTOR EiCTRCN DEVICE 2SK819 FAST SWITCHING . N-CHANNEL SILICON POWER MOS FET PACXACZ S IHSMS IONS CUIUVi . . i.ras tt.iux. Features Suitable for switching power supplies, actuator controls and pulse circuits low RDS(on) Absolute Maximum Ratings(T2=23"C) Drain to Source Voi tage_ Gate to Source Voltage Continuous Drain Curre Puise Orain Current Total Power Dissipation Total Power ... | OCR Scan |
3 pages, |
2SK819 2SK81 2SK819 abstract |
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| Abstract: NEC ELECTRONICS INC Tfl DE|t,4a7SES GOlfiTbh D 6427525 NEC ELECTRONICS INC 98D 18966 ü u MOS FIELD EFFECT TRANSISTOR ELECTHQN DEVICE 2SK811 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS (Unh:nvr.) 10.5 MAX 4 r MAX. T±3.: 1 /) I r* W 0.1 S I.S MAX I 1.3±0.2 C.S±9.1 11.5 ±0.2 2.¡±0.1 • I T I 2.U I I I TT" I I I Å" © ... | OCR Scan |
4 pages, |
T-50 Gan on silicon transistor 2SK811 for1a 2SK81 2SK811 abstract |
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| Abstract: Power F-MOS FET 2SK818, 2SK818A Silicon N-channel Power F-MOS FET â- Features • Low ON , Dimensions Item Symbol Value Unit Drain-source voltage 2SK818 Vdss 800 V 2SK818A 900 Gate-source , _ _nn_ Panasonic Power F-MOS FET 2SK818, 2SK818A Id- Vds Yr, i -ID Tr-25C , mA Gate-source current Igss Vgs=±20V, Vds = 0 ±1 M Drain-source voltage 2SK818 Vdss ID= 1mA, VGS = 0 800 V 2SK818A 900 Gate threshold voltage Vth VDS=25V, ID = lmA 1 5 V Drain-source ... | OCR Scan |
2 pages, |
SC-65 2SK818A 2SK818 2SK818 abstract |
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| Abstract: Type: 2SK818 Notes: Breakdown Voltage: 800 Continuous Current: 5 RDS(on) Ohm: 3.0 Trans , Type: 2SK818 STI Type: 2SK809A 2SK809A Notes: Breakdown Voltage: 900 Continuous Current: 5 RDS(on) Ohm , Style: TO-247 Polarity: Industry Type: 2SK809A 2SK809A STI Type: 2SK818A Notes: Breakdown Voltage: 900 , ID: Case Style: TO-247 Polarity: Industry Type: 2SK818A STI Type: 2SK825 2SK825 Notes: Breakdown , : Resistance Switching ID: Case Style: TO-247 Polarity: Industry Type: 2SK825 2SK825 STI Type: 2SK819 Notes ... | Original |
71 pages, |
2SK833 2SK792 2SK950 2SK783 2SK769 2SK858 2SK791 2SK765A 2N2962 2SK794 2n2969 2N2971 2SK733 2n2709 2n2968 2SK696 2SK696 2SK696 abstract |
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| Abstract: 2SK818, 2SK818A Silicon N-channel Power F-MOS FET â- Features • Low ON resistance Rx* (on) : Rm (on) - I.SH (typ.) • High switching rate : tr=85ns (typ.) • No secondary breakdown • High breakdown voltage. Large power â- Application • No contact relay • Solenoid drive • Motor drive • Control equipment • Switching power source Absolute Maximum Ratings (Tc=25°C) Item Sjmbd Value Unit , ±1 Dram-source voltage 2SK818 Vd» ID= 1mA. Vos=0 800 V 2SK8-18A 900 Gate threshold ... | OCR Scan |
1 pages, |
MR Relay 2SK818A 2SK818 2SK81 TOP3 package 2SK818 abstract |
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| Abstract: N-CHANNa MOS FIELD EFFECT POWER TRANSISTOR 2SK812 OCSCAtrnON Th» »IQH? « MOS »Wr Tm«in> Ã"Mi|r»d t* MtfwuMf. «uxor imi Inn? FEATURCS • 4 V Gite - lag« Im« - • Lüw «c& ^l • NoSMOtAirvfrtafcOOmi • K^h U^iwncfi Sa»Uf.iti AMOtUTI UAXIMtÄI «ATIM» y«»m«m T«f*tMf«iu*n Sta*«* Ttfintn^. . . Chvral Timsmttutm. Mjwmuti Pvmm Ommotbotm Tot* Pomw iiMtior i1t • » 'O . IM OlMipsttcn |Tg • » *Q M-iimtn VnltHM »d C*»»»nti IT. - » *C> Vofg Dum to Sw» Voila«* . 90 Vcs Goi« to S ... | OCR Scan |
1 pages, |
2SK812 2SK812 abstract |
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| Abstract: NEC ELECTRON DEVICE N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK812 DESCRIPTION The 2SK812 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. , shown or represent that they are free from patent infringement. © NEC Corporation 1987 2SK812 TYPICAL , SEC ELECTRON DEVICE 2SK812 a i 0.3 0.2 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN , PW-Pulse Width-s 3 2SK812 TEST CIRCUIT 1 UNCLAMPED SUSTAINING ENERGY DUT H 50 ni PG. (JL) Rqsioo n ... | OCR Scan |
4 pages, |
2sk8 2SK812 2SK812 abstract |
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| Abstract: • 5/-h MOS MOS Field Effect Power Transistor 2SK819 Nft^ MOS FET , 1988 NEC 2SK819 NORMALIZED TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 u 10 m PW (s) 100 m , -PW/T 5 SEC 2SK819 FORWARD BIAS OPERATING AREA KM > • V-XfflïeÅ' VDS (V) Pulsed Vcs = 4 V y-x , NEC 2SK819 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE , 10 4 SEC 2SK819 NORMALIZED TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 u 10 m PW (s) 100 ... | OCR Scan |
6 pages, |
T108 diode B3F jb 5531 2SK819 2SK819 abstract |
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| Abstract: 2SK408 SK134 SK454 SK4013 SK5137 sk513 SK191 2SK519 SK1856 SK-436 SK113 A 1:1 Strangkühlkörper Dissipateurs extrudés Extruded heatsinks K/W 36 33 6,3 3,9 6,5 30 1,3 SK 522 27 10,6 12,6 24 15 25 37,5 50 1000 mm 15 30 45 50 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 26 24 22 20 8 SK 521 3 18 15,3 25 37,5 50 75 100 1000 mm 30 45 3 K/W 29 6 5 4 2 3 SK 544 2 8 1 11,4 37,5 50 75 100 1000 mm 60 ... | Original |
54 pages, |
transistor w 04 59 SK 43 sk 473 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| No abstract text available www.datasheetarchive.com/download/12576056-674765ZC/2sk81.jpg |
User Photos | 23/05/2012 | 10.65 Kb | JPG | 2sk81.jpg |
| *version 5.3 0 @index symloc 2SJ102 2SJ102 2SJ102 2SJ102:TO220AB 0 28 symloc 2SJ114 2SJ114 2SJ114 2SJ114:TO3P 28 25 symloc 2SJ116 2SJ116 2SJ116 2SJ116:TO3 53 24 symloc 2SJ118 2SJ118 2SJ118 2SJ118:TO3P 77 25 symloc 2SJ119 2SJ119 2SJ119 2SJ119:TO3P 102 25 symloc 2SJ120 2SJ120 2SJ120 2SJ120:HITDPAK 127 28 symloc 2SJ122 2SJ122 2SJ122 2SJ122:TO220AB 155 28 symloc 2SJ123 2SJ123 2SJ123 2SJ123:TOS2-10A1C 183 31 symloc 2SJ128 2SJ128 2SJ128 2SJ128:NECMP3 214 27 symloc 2SJ132 2SJ132 2SJ132 2SJ132:NECMP3 241 27 symloc 2SJ133 2SJ133 2SJ133 2SJ133:NECMP3 268 27 symloc 2SJ134 2SJ134 2SJ134 2SJ134:NECMP25 NECMP25 NECMP25 NECMP25 295 28 symloc 2SJ135 2SJ135 2SJ135 2SJ135:NECMP45 NECMP45 NECMP45 NECMP45 323 28 symloc 2SJ136 2SJ136 2SJ136 2SJ136:NECMP25 NECMP25 NECMP25 NECMP25 351 28 symloc 2SJ137 2SJ137 2SJ137 2SJ137:NECMP45 NECMP45 NECMP45 NECMP45 379 28 symloc 2SJ140 2SJ140 2SJ140 2SJ140:NECMP25 NECMP25 NECMP25 NECMP25 407 28 symloc 2SJ141 2SJ141 2SJ141 2SJ141:NECMP45 NECMP45 NECMP45 NECMP45 435 28 sym www.datasheetarchive.com/files/spicemodels/misc/models/jpwrmos.plb |
Spice Models | 01/09/2003 | 13.04 Kb | PLB | jpwrmos.plb |
| *version 5.3 0 @index symloc M2SJ102 M2SJ102 M2SJ102 M2SJ102:pmose 0 297 symloc M2SJ114 M2SJ114 M2SJ114 M2SJ114:pmose 297 287 symloc M2SJ116 M2SJ116 M2SJ116 M2SJ116:pmose 584 276 symloc M2SJ118 M2SJ118 M2SJ118 M2SJ118:pmose 860 276 symloc M2SJ119 M2SJ119 M2SJ119 M2SJ119:pmose 1136 276 symloc M2SJ120 M2SJ120 M2SJ120 M2SJ120:pmose 1412 276 symloc M2SJ122 M2SJ122 M2SJ122 M2SJ122:pmose 1688 276 symloc M2SJ123 M2SJ123 M2SJ123 M2SJ123:pmose 1964 287 symloc M2SJ128 M2SJ128 M2SJ128 M2SJ128:pmose 2251 287 symloc M2SJ132 M2SJ132 M2SJ132 M2SJ132:pmose 2538 276 symloc M2SJ133 M2SJ133 M2SJ133 M2SJ133:pmose 2814 276 symloc M2SJ134 M2SJ134 M2SJ134 M2SJ134:pmose 3090 276 symloc M2SJ135 M2SJ135 M2SJ135 M2SJ135:pmose 3366 276 symloc M2SJ136 M2SJ136 M2SJ136 M2SJ136:pmose 3642 276 symloc M2SJ137 M2SJ137 M2SJ137 M2SJ137:pmose 3918 276 symloc M2SJ140 M2SJ140 M2SJ140 M2SJ140:pmose 4194 276 syml www.datasheetarchive.com/files/spicemodels/misc/models/jpwrmos.slb |
Spice Models | 01/09/2003 | 55.58 Kb | SLB | jpwrmos.slb |
| * Modification History: Sripada, Added New Models; Thursday, March 01, 2007 * awbirfz44n awbirfz48n * *$ model description: "awb2n6660" *b Device model created by analog_uprev for 2n6660 on Wed Mar 28 17:51:02 IST 2001 .subckt awb2n6660 1 2 3 + params: + BYPASS_L=0 + IC_VDS=1.10250E-36 10250E-36 10250E-36 10250E-36 + IC_VGS=1.10250E-36 10250E-36 10250E-36 10250E-36 + MTYPE=1 + VTO=2 + KP=0.184343 + LAMBDA=1E-10 1E-10 1E-10 1E-10 + CGSO=26.4p + CGDO=3.6p + RG=50 + RG2=12 + RD=0.186167 + RS=2.13399 + RDS=1e8 + LD=5E-9 + RLD=100 + LS=12.5E-9 + RL www.datasheetarchive.com/files/spicemodels/misc/mfn.lib |
Spice Models | 21/06/2007 | 424.67 Kb | LIB | mfn.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SK814 | NEC Electronics | N-Channel Enhancement MOSFET | |
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| 2SK818 | Panasonic | N-Channel Enhancement MOSFET | |
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| 2SK818A | Panasonic | N-Channel Enhancement MOSFET | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQP13N06L | FQP13N06L Buy | 2SK812 Buy | NEC | Direct | Power MOSFET | 60V N-Channel Logic level QFET |
| FQP13N10 | FQP13N10 Buy | 2SK810 Buy | NEC | Close | Power MOSFET | 100V N-Channel QFET |
| FQPF16N15 | FQPF16N15 Buy | 2SK815 Buy | NEC | Close | Power MOSFET | 150V N-Channel QFET |
| FQPF19N10 | FQPF19N10 Buy | 2SK815 Buy | NEC | Close | Power MOSFET | 100V N-Channel QFET |
| RFP12N10L | RFP12N10L Buy | 2SK810 Buy | NEC | Close | Power MOSFET | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
| NTE Electronics Part | Industry Part |
| NTE2377 Buy | 2SK818 Buy |
| NTE2377 Buy | 2SK818A Buy |
| NTE2389 Buy | 2SK812 Buy |
| NTE2389 Buy | 2SK813 Buy |
| NTE2389 Buy | 2SK817 Buy |
| NTE2394 Buy | 2SK819 Buy |
| NTE2987 Buy | 2SK810 Buy |
| NTE2987 Buy | 2SK811 Buy |
| Part | Similar Part | Notes |